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US20100038656 Nitride LEDs based on thick templates  
Thick HVPE templates of nitrides enhance both the growth conditions and resulting device performance of LEDs, power devices, solar cells, and other electrical elements. The use of HVPE templates...
US20080223527 Method For Patterning Reel-To-Reel Strip In Automatic Manufacturing Process  
In a method for patterning a reel-to-reel strip in an automatic manufacturing process, a reel-to-reel strip is stuck onto a support plate having a low-tack adhesive. A laser beam is used to...
US20150126017 SYSTEMS AND METHODS FOR ULTRASONICALLY CLEAVING A BONDED WAFER PAIR  
Methods for the ultrasonic cleaving of bonded wafer pairs include positioning the bonded wafer pair in a wafer holder disposed in a tank containing a volume of liquid and ultrasonically agitating...
US20080196631 DECOUPLED, MULTIPLE STAGE POSITIONING SYSTEM  
A split axis stage architecture is implemented as a multiple stage positioning system that is capable of vibrationally and thermally stable material transport at high speed and rates of...
US20100311225 WAFER PROCESSING METHOD  
A wafer processing method for dividing a wafer into individual devices along streets. The wafer processing method includes the steps of forming a division groove on the front side of the wafer...
US20140273402 METHOD FOR CUTTING WAFER  
A method for cutting wafers includes following steps. A silicon wafer is provided. A metal layer is formed on a top side of the silicon wafer. A bump layer is formed on the metal layer. A backside...
US20090098713 OBJECT CUTTING METHOD  
An object cutting method which can reliably remove particles remaining on cut sections of chips is provided. An expandable tape 23 is electrically charged in a state where a plurality of...
US20080194079 Method For Forming Median Crack In Substrate And Apparatus For Forming Median Crack In Substrate  
A method for forming a median crack and an apparatus for forming a median crack are provided, where the formation of a deep, straight median crack is possible, and an excellent broken surface of a...
US20070275497 Method of aligning a substrate, mask to be aligned with the same, and flat panel display apparatus using the same  
A method of aligning a substrate includes forming a first alignment hole in the substrate, preparing a mask with a second alignment hole narrower than the first alignment hole, modifying a surface...
US20050263854 Thick laser-scribed GaN-on-sapphire optoelectronic devices  
A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire...
US20060124617 High-power solid-state laser dicing apparatus for a gallium nitride wafer and dicing method thereof  
The present invention discloses a high-power solid-state laser dicing apparatus for a gallium nitride wafer and a dicing method thereof, wherein a gallium nitride wafer is disposed on a working...
US20080050888 Laser separation of thin laminated glass substrates for flexible display applications  
A method of separating a sheet of coated brittle material comprises the steps of providing a sheet of layered brittle material comprising a brittle layer and a coating material adhered to a...
US20060121698 Plastic film and heat-dissipating ring for chip cutting  
A transparent plastic film for chip cutting is made of polyethylene terephathalate that has an excellent transmittance to laser beams. When a laser beam passes through the plastic film and a chip...
US20100099239 LASER MACHINING  
A method of laser machining a feature in a substrate includes machining the substrate with a pulsed laser along a scan line so that the successive pulses 81 at the substrate do not overlap but are...
US20080305615 Method of Scribing and Breaking Substrate Made of a Brittle Material and System for Scribing and Breaking Substrate  
An object of the present invention is to provide a method of scribing and breaking a substrate made of a brittle material by which good-quality cutting surface of the substrate can be obtained...
US20100084668 SEMICONDUCTOR COLOR-TUNABLE BROADBAND LIGHT SOURCES AND FULL-COLOR MICRODISPLAYS  
Methods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light...
US20080090381 Laser processing method for gallium arsenide wafer  
A laser processing method for a gallium arsenide wafer of radiating a laser beam along streets formed in lattice on a surface of a gallium arsenide substrate, and cutting-off the gallium arsenide...
US20090042370 METHOD OF CUTTING PCBS  
The present invention relates to a method of cutting PCB module using a laser. The method includes steps of: providing a coverlay film, the coverlay film including at least one opening defined...
US20140094019 WAFER PROCESSING METHOD  
A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming...
US20100264518 WAFER AND METHOD FOR CONSTRUCTION, STRENGTHENING AND HOMOGENIZATION THEREOF  
The present invention provides a water and a method for strengthening, homogenization and construction thereof. The concave and convex portions are processed by laser or etching, and then formed...
US20060148213 Method of manufacturing display device  
Y-scribe lines are successively formed substantially in parallel in a first direction of a work that constitutes a display device. An X-scribe line is formed in a second direction that intersects...
US20060088984 Laser ablation method  
A combination of specific laser pulse durations and repetition rates are incorporated into a semiconductor wafer laser scribing/dicing process. The disclosed combination can reduce factors that...
US20060057823 Method for manufacturing a moulded MMC multi media card package obtained with laser cutting  
A method is provided for manufacturing a fully moulded Multi Media Card package obtained by laser cutting wherein at least some edges and the corners around the package have rounded profile and a...
US20090212396 Laser Beam Machining Method And Semiconductor Chip  
A laser processing method is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with...
US20070272668 Ultrashort laser pulse wafer scribing  
Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation...
US20070293020 SINGULATING SEMICONDUCTOR WAFERS TO FORM SEMICONDUCTOR CHIPS  
One aspect relates to a method for singulating semiconductor wafers to form semiconductor chips. A semiconductor wafer is provided with semiconductor chip positions arranged in rows and columns,...
US20060099774 Method of laser processing a gallium nitride substrate  
A method of laser processing a gallium nitride substrate, for forming a dividing groove along dividing lines that section devices formed on a gallium nitride substrate, the method comprising the...
US20100048000 METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS  
A semiconductor wafer is prepared. The wafer has a first and a second surface opposite to each other, and has a recess portion and a rim portion. The semiconductor wafer has semiconductor elements...
US20130122688 PRESSURE-SENSITIVE ADHESIVE SHEET FOR DICING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING PRESSURE-SENSITIVE ADHESIVE SHEET FOR DICING  
An object of the present invention is to provide a pressure-sensitive adhesive sheet for dicing that is capable of preventing scratching of an adsorption stage when laser-scribing a semiconductor...
US20130183811 WAFER PROCESSING METHOD  
A wafer processing method of dividing a wafer along streets. The wafer processing method includes a protective tape attaching step of attaching a protective tape to the front side of the wafer, a...
US20070272666 Infrared laser wafer scribing using short pulses  
Systems and methods are provided for scribing wafers to efficiently ablate passivation and/or encapsulation layers while reducing or eliminating chipping and cracking in the passivation and/or...
US20150255347 Method and Apparatus for Plasma Dicing a Semi-conductor Wafer  
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the...
US20140179084 WAFER DICING FROM WAFER BACKSIDE  
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the...
US20140145294 WAFER SEPARATION  
A method is provided for separation of a wafer into individual ICs. Channels are formed in the one or more metallization layers on a front-side of the wafer along respective lanes. The lanes are...
US20100001416 WAFER LASER-MARKING METHOD AND DIE FABRICATED USING THE SAME  
A wafer laser-marking method is provided. First, a wafer having a first surface (an active surface) and a second surface (a back surface) opposite to each other is provided. Next, the wafer is...
US20090191693 Wafer processing method  
A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate,...
US20080242054 Dicing and drilling of wafers  
Methods and apparatus to dicing and/or drilling of wafers are described. In one embodiment, an electromagnetic radiation beam (e.g., a relatively high intensity, ultra-short laser beam) may be...
US20080061303 COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a...
US20100055873 LED-LASER LIFT-OFF METHOD  
The present invention discloses an LED-laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate...
US20120289028 WAFER DIVIDING METHOD  
A wafer dividing method including a step of applying a laser beam to a wafer along division lines with the focal point of the laser beam set inside the wafer, thereby forming modified layers...
US20080076234 Method of multi-processing object using polygon mirror  
A method of multi-processing an object using a polygon mirror according to an embodiment of the invention includes setting processing parameters for individual layers of an object having a...
US20120208349 Support for Wafer Singulation  
A support substrate or chuck 20 supports wafer die 11 during and after dicing of a wafer 10. The support substrate comprises an array of islands 21, upper faces of which are raised above a major...
US20130344686 METHOD OF CUTTING OBJECT TO BE PROCESSED  
A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P...
US20080190902 Wafer dividing method and laser beam processing machine  
A method of dividing a wafer, comprising the steps of forming a deteriorated layer along streets in the inside of the wafer; affixing an adhesive film to the rear surface of the wafer; affixing...
US20100015783 METHOD OF CUTTING AN OBJECT TO BE PROCESSED  
A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P...
US20100099238 Laser-assisted chemical singulation of a wafer  
The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a...
US20080113493 Method, Device and Diffraction Grating for Separating Semiconductor Elements Formed on a Substrate by Altering Said Diffraction Grating  
A method of separating semiconductor elements formed in a wafer of semiconductor material using a laser producing a primary laser beam, and an arrangement and diffraction grating used in the...
US20080299745 WAFER SEPARATING METHOD  
A wafer separating method including a laminated member removing step for partially removing a laminated member of a wafer along streets by applying a laser beam to the wafer along the streets, and...
US20090170289 WAFER DIVIDING METHOD  
A laser beam is applied to an intersection area of each second street of a wafer by using a dicing apparatus to thereby form a first modified layer along the intersection area. Thereafter, the...
US20100009515 LASER LIFT-OFF METHOD  
The present invention discloses a laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having...

Matches 1 - 50 out of 242 1 2 3 4 5 >