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US20050239268 |
Integrated circuit with removable scribe street trim and test pads
A method comprises forming a pad in a scribe street adjacent to an integrated circuit (“IC”), electrically connecting the pad to the IC, and sawing the scribe street. A wafer is also disclosed as... |
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US20110084412 |
INDEXING OF ELECTRONIC DEVICES WITH MULTIPLE WEIGHT MARKERS
A solution for indexing electronic devices includes corresponding electronic device including a die integrating an electronic circuit, the die having at least one index including a reference... |
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US20080113491 |
EUV pellicle with increased EUV light transmittance
According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the... |
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US20070063317 |
Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device
An overlay key formed in a scribe lane and used to align a circuit pattern may include a lower overlay mark formed on a metal silicide layer directly in contact with a silicon substrate. A method... |
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US20140235033 |
NON-CONVENTIONAL METHOD OF SILICON WAFER SAWING USING A PLURALITY OF WAFER SAW ROTATIONAL ANGLES
A silicon wafer saw can be set to either three or four different cutting angle orientations from a zero degree reference to produce integrated circuit dice having corners greater than 90 degrees.... |
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US20080223527 |
Method For Patterning Reel-To-Reel Strip In Automatic Manufacturing Process
In a method for patterning a reel-to-reel strip in an automatic manufacturing process, a reel-to-reel strip is stuck onto a support plate having a low-tack adhesive. A laser beam is used to... |
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US20110294279 |
WORKING METHOD FOR SAPPHIRE SUBSTRATE
A working method for a sapphire substrate for dividing a sapphire substrate along a set planned dividing line includes a cutting groove forming step of positioning a cutting blade, which includes... |
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US20150104928 |
WAFER PROCESSING METHOD
After performing a dividing step to divide a wafer into individual chips, an irradiation step is performed to apply ultraviolet radiation or plasma to the mount side of each chip, thereby... |
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US20070093038 |
Method for making microchips and microchip made according to this method
Microchips have a first surface and a second surface, which second surface is opposite the first surface. Microelectronic structures are fabricated at the first surface. At least two layers of... |
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US20070249146 |
Protective tape applying method
A protective tape applying method includes: preparing a substrate which has plural devices formed on a surface of the substrate; and holding the substrate on a chuck table such that a rear surface... |
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US20120238072 |
HEAT TRANSFER FOR A HARD-DRIVE PRE-AMP
A substrate for mounting a preamp chip thereupon, fabricated using a stiffener layer made of a conductive material; an insulating layer provided over the circuitry area of the substrate; a... |
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US20140065796 |
GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD
The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from... |
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US20080092714 |
MULTILAYER DICING BLADE
A semiconductor dicing blade comprising a blade body, a first grit located within a core of the blade body, and a second different grit located on a side surface of the blade body wherein the... |
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US20050263854 |
Thick laser-scribed GaN-on-sapphire optoelectronic devices
A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire... |
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US20150064879 |
Separation of Chips on a Substrate
Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated... |
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US20130127364 |
FRONT FACING PIGGYBACK WAFER ASSEMBLY
Front facing piggyback wafer assembly. In accordance with an embodiment of the present invention, a plurality of piggyback substrates are attached to a carrier wafer. The plurality of piggyback... |
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US20080213975 |
Supply Mechanism For the Chuck of an Integrated Circuit Dicing Device
A system for dicing substrates to singulate integrated circuit units within in them includes a dicing machine (Z) which operates with a chuck table (4). A lifting assembly (Ax,Ay) deposits... |
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US20140038329 |
EPITAXIAL GROWTH ON THIN LAMINA
Methods and apparatus are provided for forming an electronic device from a lamina and an epitaxially grown semiconductor material. The method includes providing a donor body comprising a top... |
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US20140252597 |
Directly Sawing Wafers Covered with Liquid Molding Compound
A method includes forming a passivation layer over a metal pad, wherein the metal pad is further overlying a semiconductor substrate of a wafer. A Post-Passivation Interconnect (PPI) is formed to... |
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US20100308455 |
Method for Manufacturing Hetero-Bonded Wafer
A method for manufacturing a hetero-bonded wafer having a large mismatch of thermal expansion coefficient comprises forming a wafer bonding means and an electrical interconnection means on at... |
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US20120190173 |
METHOD FOR PACKAGING WAFER
A method for packaging a wafer is provided, which includes: providing a bare wafer; forming a plurality of through silicon vias across through the bare wafer, the through silicon vias being filled... |
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US20060121698 |
Plastic film and heat-dissipating ring for chip cutting
A transparent plastic film for chip cutting is made of polyethylene terephathalate that has an excellent transmittance to laser beams. When a laser beam passes through the plastic film and a chip... |
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US20120098104 |
SHIELDING TECHNIQUES FOR AN INTEGRATED CIRCUIT
Described herein are techniques for forming, during wafer processing, a conductive shielding layer for a chip formed from a wafer. The conductive shielding layer can be formed on multiple sides of... |
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US20070243695 |
Method for Producing Semiconductor Wafers and a System for Determining a Cut Position in a Semiconductor Ingot
A method for producing semiconductor wafers, from a semiconductor ingot, wherein an oxygen concentration distribution in the growth axis direction is measured in the ingot state (F2), a position... |
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US20060292832 |
Method of working nitride semiconductor crystal
In a method of working a crystal, when a nitride semiconductor crystal is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode to cause electrical discharge,... |
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US20140141595 |
GALLIUM-NITRIDE-ON-DIAMOND WAFERS AND DEVICES, AND METHODS OF MANUFACTURE
Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic... |
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US20130217208 |
Method of Processing Wafers for Saving Material and Protecting Environment
A method of processing wafers for saving material and protecting environment is implemented to collect defective or incomplete wafers and perform cutting operation to create a plurality of... |
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US20070275539 |
METHOD OF STIMULATING DIE CIRCUITRY AND STRUCTURE THEREFOR
A method includes providing a wafer having a first die and a scribe grid, where the first die has die circuitry and a bond pad electrically connected to the die circuitry, and where the scribe... |
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US20100320531 |
STANDING CHIP SCALE PACKAGE
A standing chip scale package is disclosed. The standing chip scale package provides electrical connection to bumped device contacts on both sides of the chip. The package is coupleable to a... |
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US20070275540 |
Backside via formation prior to die attachment
Backside via formation in one or more dice prior to the one or more dice being attached to an underlying substrate is described herein. The resulting backside vias having substantially no air... |
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US20140103495 |
WAFER AND METHOD FOR PROCESSING A WAFER
A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to... |
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US20150093881 |
Through-Assembly Via Modules and Methods for Forming the Same
A discrete Through-Assembly Via (TAV) module includes a substrate, and vias extending from a surface of the substrate into the substrate. The TAV module is free from conductive features in contact... |
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US20130203237 |
CUTTING METHOD FOR DEVICE WAFER
A cutting method for cutting a device wafer along a plurality of crossing division lines by using a cutting blade, the division lines being formed on the front side of the device wafer to... |
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US20060169680 |
INTEGRATED, INTEGRATED CIRCUIT SINGULATION SYSTEM
An integrated, integrated circuit singulation system is provided including scribing a substrate using mechanical cutting or a plurality of passes of laser cutting, and dicing the substrate using... |
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US20090298262 |
METHOD OF SPLITTING BRITTLE MATERIALS WITH TRENCHING TECHNOLOGY
One aspect of the invention relates to a method for splitting an object made of brittle material into at least two pieces. The object has a first flat surface and a second flat surface opposite to... |
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US20140084297 |
GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD
The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray... |
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US20110223743 |
ELECTRONIC COMPONENT MANUFACTURING METHOD
The objective is to limit pickup defects when chips with a semi-cured adhesive layer are picked up following dicing by lowering the adhesive strength of an ultraviolet curable adhesive beforehand... |
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US20120077333 |
TRENCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
Disclosed herein are a trench substrate and a method of manufacturing the same. The trench substrate includes a base substrate, an insulating layer formed on one side or both sides of the base... |
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US20140284615 |
METHOD FOR MANUFACTURING A SILICON CARBIDE DEVICE AND A SILICON CARBIDE DEVICE
A method for manufacturing a silicon carbide device includes providing a silicon carbide wafer and manufacturing a mask layer on top of the silicon carbide wafer. Further, the method includes... |
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US20070264798 |
Method and System for Partially Removing Circuit Patterns From a Multi-Project Wafer
Disclosed are a method and a system for partially removing circuit patterns from a multi-project wafer. This method and this system can be used to provide a multi-project-wafer to a user without... |
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US20120318334 |
SPALLING METHODS TO FORM MULTI-JUNCTION PHOTOVOLTAIC STRUCTURE
A method cleaving a semiconductor material that includes providing a germanium substrate having a germanium and tin alloy layer is present therein. A stressor layer is deposited on a surface of... |
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US20150262881 |
CUTTING METHOD
A cutting method for cutting by a cutting blade a workpiece which includes metal at least in a predetermined cutting position. The cutting method includes a cutting step of cutting by the cutting... |
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US20080176360 |
METHOD FOR SAWING A WAFER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR PACKAGE BY USING A MULTIPLE TAPE
A method for sawing a wafer includes the following steps. A wafer which has an active surface, a back surface and a plurality of longitudinal and transverse sawing lines is provided, wherein the... |
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US20140091439 |
SILICON SHAPING
One embodiment for forming a shaped substrate for an electronic device can form a shaped perimeter to define the substrate shape on the surface of a substrate. The shaped perimeter can extend at... |
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US20130337632 |
Method for Producing Group III Nitride Crystal
A method for producing a Group III nitride crystal includes the steps of cutting a plurality of Group III nitride crystal substrates 10p and 10q having a major surface from a Group III nitride... |
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US20110021003 |
SUPPLY MECHANISM FOR THE CHUCK OF AN INTEGRATED CIRCUIT DICING DEVICE
A system for dicing substrates to singulate integrated circuit units within in them includes a dicing machine (Z) which operates with a chuck table (4). A lifting assembly (Ax,Ay) deposits... |
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US20120329245 |
Group III Nitride Crystal and Method for Producing the Same
A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a... |
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US20100248449 |
Metal-Assisted Chemical Etching of Substrates
Disclosed herein are various embodiments related to metal-assisted chemical etching of substrates on the micron, sub-micron and nano scales. In one embodiment, among others, a method for... |
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US20080081015 |
Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt... |
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US20070178666 |
INTEGRATED CIRCUIT SYSTEM WITH WAFERSCALE SPACER SYSTEM
An integrated circuit system is provided including forming integrated circuits on a wafer using a semiconductor manufacturing process; forming a waferscale spacer system on the integrated circuits... |