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US20050148160 |
Encapsulated semiconductor components and methods of fabrication
A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit... |
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US20050139940 |
Methods for depositing, releasing and packaging microelectromechanical devices on wafer substrates
A method for forming a MEMS device is disclosed, where a final release step is performed just prior to a wafer bonding step to protect the MEMS device from contamination, physical contact, or... |
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US20050026397 |
CRACK STOP FOR LOW K DIELECTRICS
A crack stop for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver... |
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US20060019467 |
Methods of fabricating integrated circuit chips for multi-chip packaging and wafers and chips formed thereby
Methods of forming integrated circuit chips include forming a plurality of criss-crossing grooves in a semiconductor wafer having a plurality of contact pads thereon and filling the criss-crossing... |
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US20070098900 |
Media providing non-contacting formation of high contrast marks and method of using same, composition for forming a laser-markable coating, a laser-markable material and process of forming a marking
A laser markable media that can provide superior mark quality with high contrast, high resolution, and a high degree of quality consistency, and that does not rely on physical damages to the... |
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US20060105544 |
Protective film agent for laser dicing and wafer processing method using the protective film agent
A protective film agent for laser dicing according to the present invention comprises a solution having, dissolved therein, a water-soluble resin and at least one laser light absorber selected... |
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US20160104780 |
Semiconductor Devices and Methods of Manufacturing Thereof
In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the... |
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US20050260829 |
Manufacturing method of a semiconductor device
The reliability of a thin semiconductor device is to be improved. A tape having a ring affixed to an outer periphery thereof is affixed to a main surface of a semiconductor wafer, and, in this... |
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US20050136622 |
Methods and apparatus for laser dicing
An apparatus and method of dicing a microelectronic device wafer by laser ablating at least an interconnect layer portion of the microelectronic device wafer in the presence of an anion plasma,... |
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US20110012127 |
GaN CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In a GaN crystal substrate, a rear surface opposite to a crystal growth surface can have a warpage w(R) satisfying −50 μm≦w(R)≦50 μm, a surface roughness Ra(R) satisfying Ra(R)≦10 μm, and a... |
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US20100267218 |
Semiconductor Wafer Processing to Increase the Usable Planar Surface Area
The invention provides a method for increasing the usable surface area of a semiconductor wafer having a substantially planar surface and a thickness dimension at right angles to said... |
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US20080079152 |
Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device
A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the... |
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US20080206963 |
Cleaving process to fabricate multilayered substrates using low implantation doses
A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave... |
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US20070099396 |
METHOD OF FORMING PATTERN, FILM STRUCTURE, ELECTROOPTICAL DEVICE AND ELECTRONIC EQUIPMENT
A method of forming a pattern includes forming mark partition walls that correspond to an alignment mark on a substrate before forming the pattern by providing a pattern forming material between... |
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US20090127667 |
Semiconductor chip device having through-silicon-via (TSV) and its fabrication method
A semiconductor device with TSV and its fabrication method are revealed. The semiconductor device primarily comprises a chip and a flexible metal wire inside. A redistributed trace layer and a... |
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US20080001241 |
Structure and method of making lidded chips
Methods are provided for fabricating packaged chips having protective layers, e.g., lids or other overlying layers having transparent, partially transparent, or opaque characteristics or a... |
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US20070072393 |
Method for preparing and assembling substrates
A method for assembling a first and a second wafer of material, including routing at least the first wafer and assembling the first and second wafer. |
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US20050064683 |
Method and apparatus for supporting wafers for die singulation and subsequent handling
A method and apparatus for singulating a semiconductor substrate such as a wafer into individual components are disclosed. The peripheral edge of the substrate (termed the “edge bead ring” or... |
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US20050255675 |
Apparatus for supporting wafers for die singulation and subsequent handling and in-process wafer structure
A method and apparatus for singulating a semiconductor substrate such as a wafer into individual components are disclosed. The peripheral edge of the substrate (termed the “edge bead ring” or... |
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US20050101106 |
Method of manufacturing a semiconductor device
A low thermal conductivity layer is formed on a back surface of a semiconductor wafer or chip, and a laser impression is formed on the low thermal conductivity layer. The laser impression can be... |
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US20070190747 |
Wafer level packaging to lidded chips
Methods are provided for making a plurality of lidded microelectronic elements. In an exemplary embodiment, a lid wafer is assembled with a device wafer. Desirably, the lid wafer is severed into a... |
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US20130178006 |
WAFER DICING METHOD AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE CHIPS EMPLOYING THE SAME
A wafer dicing method includes forming a semiconductor device on a first surface of a wafer; first-dicing a portion of the wafer and the semiconductor device; and splitting the wafer and the... |
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US20100117224 |
Sensor
A sensor die in a sensor device includes a conformal dielectric coating over at least a die sidewall adjacent an interconnect edge and, in some devices, a conformal dielectric coating over at... |
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US20070287266 |
Method of cutting and machining a silicon wafer
The present invention discloses a method of cutting and machining a silicon wafer. It comprises to provide a CO2 laser apparatus, a glass or a metal-coated substrate to be put on a supporter and a... |
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US20100323498 |
Circuit Device and Method of Manufacturing Thereof
A circuit device of preferred embodiments of the present invention includes: a circuit element with electrodes formed in a peripheral part thereof; connecting portions connected to surfaces of the... |
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US20050186761 |
Group encapsulated dicing chuck
A semiconductor wafer saw and method of using the same for dicing semiconductor wafers are disclosed comprising a wafer saw including variable lateral indexing capabilities and multiple blades.... |
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US20140057411 |
DICING BEFORE GRINDING AFTER COATING
This invention is a method for singulating a semiconductor wafer into individual semiconductor dies, the top surface of the semiconductor wafer bumped with metallic pre-connections and having a... |
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US20120045866 |
METHOD OF FORMING AN ELECTRONIC DEVICE USING A SEPARATION TECHNIQUE
A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a... |
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US20070111477 |
Semiconductor wafer
A semiconductor wafer is disclosed for which irradiation of a laser beam forms a modified region due to multiphoton absorption to thereby facilitate dicing of the semiconductor wafer. The... |
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US20070063317 |
Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device
An overlay key formed in a scribe lane and used to align a circuit pattern may include a lower overlay mark formed on a metal silicide layer directly in contact with a silicon substrate. A method... |
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US20130273717 |
Apparatus and Method for the Singulation of a Semiconductor Wafer
The present disclosure is directed to an apparatus for the singulation of a semiconductor substrate or wafer. In some embodiments the singulation apparatus comprises a plurality of cutting... |
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US20130240919 |
SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
The present invention relates to a semiconductor device capable of emitting light upon application of voltage and a method for manufacturing the same, and more particularly to a semiconductor... |
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US20050140030 |
Scribe street width reduction by deep trench and shallow saw cut
In a method to singulate a semiconductor wafer (100) into chips, trench streets (107) of predetermined depth (105a) are formed across the first, active wafer surface (102) to define the outline of... |
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US20070184634 |
Method of manufacturing a semiconductor device
A semiconductor device manufacturing method is disclosed wherein a semiconductor integrated circuit is formed in each of plural semiconductor chip regions of a semiconductor wafer which regions... |
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US20060094210 |
Semiconductor wafer processing method and processing apparatus
A method of processing a semiconductor wafer having circuits which are formed in a plurality of rectangular areas sectioned by streets arranged in a lattice pattern on the front surface,... |
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US20130307147 |
CHIP PACKAGE AND METHOD FOR FORMING THE SAME
Embodiments of the present invention provide a chip package including: a substrate having a first surface and a second surface; a device region located in the substrate; a conducting pad structure... |
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US20140084297 |
GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD
The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray... |
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US20130034934 |
WAFER LEVEL PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a wafer level package is provided that enables suppressing the wearing of a cutter and extending the lifetime of the cutter, including forming insulating first resin... |
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US20050029646 |
Semiconductor device and method for dividing substrate
The object of the present invention is to provide a semiconductor device and a method for dividing a substrate which are capable of preventing chips from breaking and manufacturing chips in a... |
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US20090065902 |
METHOD OF FORMING A SEMICONDUCTOR DIE HAVING A SLOPED EDGE FOR RECEIVING AN ELECTRICAL CONNECTOR
A method of forming a low profile semiconductor package, and a semiconductor package formed thereby, is disclosed. The semiconductor die is formed with one or more sloped edges on which... |
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US20050009313 |
Manufacturing method for semiconductor device
An internal wire is formed via an oxide film on the front surface of a semiconductor substrate so as to extend toward the boundary relative to an adjacent integrated circuit region. An upper... |
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US20120286397 |
Die Seal for Integrated Circuit Device
Disclosed herein is a semiconductor device having a novel stress reduction structures that are employed in an effort to eliminate or at least reduce undesirable cracking or chipping of... |
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US20120115306 |
DEFLECTOR ARRAY, CHARGED PARTICLE BEAM DRAWING APPARATUS, DEVICE MANUFACTURING METHOD, AND DEFLECTOR ARRAY MANUFACTURING METHOD
A deflector array includes a first base substrate including a plurality of apertures formed thereon, and a plurality of deflector chips including a plurality of apertures formed thereon and a... |
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US20070099397 |
Microfeature dies with porous regions, and associated methods and systems
Microfeature dies with porous regions, and associated methods and systems are disclosed. A method in accordance with one embodiment of the invention includes forming a porous region between a die... |
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US20130252401 |
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor... |
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US20060199354 |
Method and system for high-speed precise laser trimming and electrical device produced thereby
A method and system are provided for high-speed, laser-based, precise laser trimming at least one electrical element along a trim path. The method includes generating a pulsed laser output with a... |
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US20150221517 |
METHOD OF MANUFACTURING SEMICONDUCTOE DEVICE
A method of manufacturing a semiconductor device capable of thinning a semiconductor chip can be performed while preventing the semiconductor chip from being damaged. A method of manufacturing a... |
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US20060205182 |
Method for manufacturing semiconductor device
A method of dicing a semiconductor wafer includes providing an interconnect layer providing a protective film on the interconnect layer on the side of a device-forming surface of a silicon wafer,... |
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US20080119029 |
WAFER SCALE THIN FILM PACKAGE
A chip module having a chip with a flexible multilayer redistribution thin film attached thereto for connection to a substrate. The thin film acts as both a redistribution medium with multiple... |
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US20050263854 |
Thick laser-scribed GaN-on-sapphire optoelectronic devices
A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire... |