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US20070141803 Methods for making substrates and substrates formed therefrom  
A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the...
US20050009288 Process for producing semiconductor article using graded epitaxial growth  
A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by...
US20120012972 SINGLE-CRYSTAL SILICON SUBSTRATE, SOI SUBSTRATE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of...
US20110287604 METHODS OF FORMING SEMICONDUCTOR STRUCTURES COMPRISING DIRECT BONDING OF SUBSTRATES  
The invention relates to a method of initiating molecular bonding, comprising bringing one face of a first wafer to face one face of a second wafer and initiating a point of contact between the...
US20110270099 HERMETIC WAFER-TO-WAFER BONDING WITH ELECTRICAL INTERCONNECTION  
An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom...
US20070281439 Techniques for Layer Transfer Processing  
Techniques for the fabrication of semiconductor devices are provided. In one aspect, a layer transfer structure is provided. The layer transfer structure comprises a carrier substrate having a...
US20070045738 METHOD FOR THE MANUFACTURE OF A STRAINED SILICON-ON-INSULATOR STRUCTURE  
The present invention is directed to a strained silicon on insulator (SSOI) structure having improved surface characteristics, such as reduced roughness, low concentration of LPDs, and lower...
US20120061686 SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE  
A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an...
US20060035408 Methods for designing spacers for use in stacking semiconductor devices or semiconductor device components  
A method for designing a spacer to be used in a stacked multi-chip module includes configuring a spacer layer that is nonconfluent or includes voids. The spacer layer is configured to at least...
US20060046431 Layered semiconductor wafer with low warp and bow, and process for producing it  
Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having...
US20050059218 Thin films and production methods thereof  
A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered...
US20050085049 Wafer bonded virtual substrate and method for forming the same  
A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle...
US20070284611 STRUCTURE OF STRAINED SILICON ON INSULATOR AND METHOD OF MANUFACTURING THE SAME  
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating...
US20110108854 SUBSTANTIALLY LATTICE MATCHED SEMICONDUCTOR MATERIALS AND ASSOCIATED METHODS  
Semiconductor devices having atomic lattice matching template interlayers are provided. In one aspect, a semiconductor device can include a first semiconductor material, a second semiconductor...
US20080181558 Electronic and optical circuit integration through wafer bonding  
One embodiment in accordance with the invention is an apparatus that can include an optical circuit wafer and an integrated circuit wafer. The optical circuit wafer and the integrated circuit...
US20070040235 Dual trench isolation for CMOS with hybrid orientations  
The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of...
US20050218111 Methods for preparing a bonding surface of a semiconductor wafer  
A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface using a mix of NH4OH/H2O2 to increase the bonding...
US20120168935 INTEGRATED CIRCUIT DEVICE AND METHOD FOR PREPARING THE SAME  
An integrated circuit device includes a bottom wafer having a first annular dielectric block, at least one stacking wafer having a second annular dielectric block positioned on the bottom wafer,...
US20120012862 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE  
A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and...
US20050168306 MEMS device with integral packaging  
A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is...
US20090255584 CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES  
A thick film conductive composition comprising electrically conductive material, rhodium-containing additive, one or more glass frits, and an organic medium.
US20070190746 SUBSTRATE PROCESSING APPARATUS  
An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one...
US20060003549 Assemblies including semiconductor substrates of reduced thickness and support structures therefor  
A fabrication substrate for use in fabricating integrated circuits and other electronic devices includes a substrate that comprises semiconductor material, as well as a support structure on an...
US20130285253 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an...
US20120214290 SUBSTRATE HOLDER, PAIR OF SUBSTRATE HOLDERS, SUBSTRATE BONDING APPARATUS AND METHOD FOR MANUFACTURING DEVICES  
Provided is a substrate holder pair comprising a first substrate holder that has a first holding portion holding a first substrate; a second substrate holder that has a second holding portion...
US20120068289 Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods  
Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the...
US20070235883 Combined semiconductor apparatus and a fabricating method thereof  
A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device in the first thin...
US20060040470 Methods for minimizing defects when transferring a semiconductor useful layer  
A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a...
US20060035438 Method and resulting structure for manufacturing semiconductor substrates  
A method of manufacturing bonded substrates. The method includes providing a metallic substrate. The metal substrate has a predetermined thickness. The method also includes bonding a first...
US20050115642 Semiconductor substrate and method for fabricating the same  
The semiconductor substrate comprises a silicon substrate 10, a silicon germanium layer 12 formed on the silicon substrate; and a silicon layer 14 formed on the silicon germanium layer. At least...
US20110111574 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE  
A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based...
US20060043562 Circuit device and manufacture method for circuit device  
There is provided a circuit device including a plurality of circuit blocks, wherein: on one surface of an insulating sheet having flexibility, a first and a second wiring patterns are formed, the...
US20060014363 Thermal treatment of a semiconductor layer  
A method for forming a structure that includes a layer that is removed from a donor wafer that has a first layer made of a semiconductor material containing germanium. The method includes the...
US20050255672 Method and resulting structure for manufacturing semiconductor substrates  
A semiconductor wafer composite is used as a basis for fabricating semiconductor chips, especially compound semiconductor devices. The semiconductor wafer composite advantageously comprises a...
US20170084778 TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES  
Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is...
US20110315218 CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES  
The instant invention is directed to a method of manufacturing a semiconductor device, e.g., a solar cell, with an electrode formed from a thick film conductive composition comprising electrically...
US20090130821 THREE DIMENSIONAL PACKAGING WITH WAFER-LEVEL BONDING AND CHIP-LEVEL REPAIR  
A method, a system and a computer readable medium for three dimensional packaging with wafer-level bonding and chip-level repair. A first wafer is provided having a first plurality of chips. A...
US20060177991 SOI wafer production method  
By using, in the so-called Smart Cut process comprising the steps of bonding an ion-implanted active layer wafer to a base wafer and later splitting off the base wafer to produce a SOI wafer, a...
US20050282355 High density bonding of electrical devices  
A method of thermocompressive bonding of one or more electrical devices using individual heating elements and a resilient member to force the individual heating elements into compressive...
US20050236693 Wafer stabilization device and associated production method  
A stabilization device and method for stabilizing a workpiece such as a thin film wafer is presented. The thin wafer is fixed and oriented in planar fashion. The stabilization device is realized...
US20130154112 Method for Forming Isolation Trenches in Micro-Bump Interconnect Structures and Devices Obtained Thereof  
The disclosure is related to a substrate suitable for use in a stack of interconnected substrates, comprising: a base layer having a front side and a back side surface parallel to the plane of the...
US20120211770 SEMICONDUCTOR DEVICE, COMBINED SUBSTRATE, AND METHODS FOR MANUFACTURING THEM  
There are provided a semiconductor device of low cost and high quality, a combined substrate used for manufacturing the semiconductor device, and methods for manufacturing them. The method for...
US20050233544 Method of smoothing the outline of a useful layer of material transferred onto a support substrate  
A method of providing a regular outline in a useful layer of material that is transferred from a source substrate onto a support substrate during the fabrication of a composite substrate for...
US20150155165 METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER  
A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer...
US20100308471 ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An electronic device includes: a first substrate; and a second substrate on which the first substrate is mounted and which is electrically connected to the first substrate in at least one...
US20080164606 SPACERS FOR WAFER BONDING  
A deformable spacer for wafer bonding applications is disclosed. The spacer may be used to keep wafers separated until desired conditions are achieved.
US20070249098 Bonding plate mechanism for use in anodic bonding  
A bonding plate mechanism for use in anodic bonding of first and second material sheets together, the apparatus comprising: a base including first and second spaced apart surfaces; a thermal...
US20060022275 Planar dual-gate transistor and method for fabricating a planar dual-gate transistor  
A method for fabricating a double-gate transistor including defining an active area on an SOI substrate, forming a first gate region on the SOI substrate, forming source/drain regions made of...
US20050118788 Mask, method for manufacturing thereof, method for manufacturing organic electroluminescent device, and organic electroluminescent device  
A mask is provided for forming a desired high-precision layer pattern on a glass substrate or the like used as a layer-formation object material. The mask includes a first substrate having a first...
US20110024767 Semiconductor Substrates, Devices and Associated Methods  
Semiconductor substrates and devices having improved performance and cooling, as well as associated methods, are provided. In one aspect, for example, a semiconductor device can include a matrix...
Matches 1 - 50 out of 217 1 2 3 4 5 >