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US20070141803 |
Methods for making substrates and substrates formed therefrom
A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the... |
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US20050009288 |
Process for producing semiconductor article using graded epitaxial growth
A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by... |
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US20120012972 |
SINGLE-CRYSTAL SILICON SUBSTRATE, SOI SUBSTRATE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of... |
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US20110287604 |
METHODS OF FORMING SEMICONDUCTOR STRUCTURES COMPRISING DIRECT BONDING OF SUBSTRATES
The invention relates to a method of initiating molecular bonding, comprising bringing one face of a first wafer to face one face of a second wafer and initiating a point of contact between the... |
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US20110270099 |
HERMETIC WAFER-TO-WAFER BONDING WITH ELECTRICAL INTERCONNECTION
An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom... |
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US20070281439 |
Techniques for Layer Transfer Processing
Techniques for the fabrication of semiconductor devices are provided. In one aspect, a layer transfer structure is provided. The layer transfer structure comprises a carrier substrate having a... |
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US20070045738 |
METHOD FOR THE MANUFACTURE OF A STRAINED SILICON-ON-INSULATOR STRUCTURE
The present invention is directed to a strained silicon on insulator (SSOI) structure having improved surface characteristics, such as reduced roughness, low concentration of LPDs, and lower... |
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US20120061686 |
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an... |
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US20060035408 |
Methods for designing spacers for use in stacking semiconductor devices or semiconductor device components
A method for designing a spacer to be used in a stacked multi-chip module includes configuring a spacer layer that is nonconfluent or includes voids. The spacer layer is configured to at least... |
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US20060046431 |
Layered semiconductor wafer with low warp and bow, and process for producing it
Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having... |
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US20050059218 |
Thin films and production methods thereof
A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered... |
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US20050085049 |
Wafer bonded virtual substrate and method for forming the same
A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle... |
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US20070284611 |
STRUCTURE OF STRAINED SILICON ON INSULATOR AND METHOD OF MANUFACTURING THE SAME
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating... |
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US20110108854 |
SUBSTANTIALLY LATTICE MATCHED SEMICONDUCTOR MATERIALS AND ASSOCIATED METHODS
Semiconductor devices having atomic lattice matching template interlayers are provided. In one aspect, a semiconductor device can include a first semiconductor material, a second semiconductor... |
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US20080181558 |
Electronic and optical circuit integration through wafer bonding
One embodiment in accordance with the invention is an apparatus that can include an optical circuit wafer and an integrated circuit wafer. The optical circuit wafer and the integrated circuit... |
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US20070040235 |
Dual trench isolation for CMOS with hybrid orientations
The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of... |
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US20050218111 |
Methods for preparing a bonding surface of a semiconductor wafer
A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface using a mix of NH4OH/H2O2 to increase the bonding... |
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US20120168935 |
INTEGRATED CIRCUIT DEVICE AND METHOD FOR PREPARING THE SAME
An integrated circuit device includes a bottom wafer having a first annular dielectric block, at least one stacking wafer having a second annular dielectric block positioned on the bottom wafer,... |
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US20120012862 |
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and... |
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US20050168306 |
MEMS device with integral packaging
A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is... |
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US20090255584 |
CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
A thick film conductive composition comprising electrically conductive material, rhodium-containing additive, one or more glass frits, and an organic medium. |
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US20070190746 |
SUBSTRATE PROCESSING APPARATUS
An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one... |
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US20060003549 |
Assemblies including semiconductor substrates of reduced thickness and support structures therefor
A fabrication substrate for use in fabricating integrated circuits and other electronic devices includes a substrate that comprises semiconductor material, as well as a support structure on an... |
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US20130285253 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an... |
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US20120214290 |
SUBSTRATE HOLDER, PAIR OF SUBSTRATE HOLDERS, SUBSTRATE BONDING APPARATUS AND METHOD FOR MANUFACTURING DEVICES
Provided is a substrate holder pair comprising a first substrate holder that has a first holding portion holding a first substrate; a second substrate holder that has a second holding portion... |
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US20120068289 |
Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods
Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the... |
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US20070235883 |
Combined semiconductor apparatus and a fabricating method thereof
A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device in the first thin... |
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US20060040470 |
Methods for minimizing defects when transferring a semiconductor useful layer
A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a... |
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US20060035438 |
Method and resulting structure for manufacturing semiconductor substrates
A method of manufacturing bonded substrates. The method includes providing a metallic substrate. The metal substrate has a predetermined thickness. The method also includes bonding a first... |
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US20050115642 |
Semiconductor substrate and method for fabricating the same
The semiconductor substrate comprises a silicon substrate 10, a silicon germanium layer 12 formed on the silicon substrate; and a silicon layer 14 formed on the silicon germanium layer. At least... |
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US20110111574 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based... |
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US20060043562 |
Circuit device and manufacture method for circuit device
There is provided a circuit device including a plurality of circuit blocks, wherein: on one surface of an insulating sheet having flexibility, a first and a second wiring patterns are formed, the... |
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US20060014363 |
Thermal treatment of a semiconductor layer
A method for forming a structure that includes a layer that is removed from a donor wafer that has a first layer made of a semiconductor material containing germanium. The method includes the... |
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US20050255672 |
Method and resulting structure for manufacturing semiconductor substrates
A semiconductor wafer composite is used as a basis for fabricating semiconductor chips, especially compound semiconductor devices. The semiconductor wafer composite advantageously comprises a... |
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US20170084778 |
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is... |
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US20110315218 |
CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
The instant invention is directed to a method of manufacturing a semiconductor device, e.g., a solar cell, with an electrode formed from a thick film conductive composition comprising electrically... |
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US20090130821 |
THREE DIMENSIONAL PACKAGING WITH WAFER-LEVEL BONDING AND CHIP-LEVEL REPAIR
A method, a system and a computer readable medium for three dimensional packaging with wafer-level bonding and chip-level repair. A first wafer is provided having a first plurality of chips. A... |
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US20060177991 |
SOI wafer production method
By using, in the so-called Smart Cut process comprising the steps of bonding an ion-implanted active layer wafer to a base wafer and later splitting off the base wafer to produce a SOI wafer, a... |
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US20050282355 |
High density bonding of electrical devices
A method of thermocompressive bonding of one or more electrical devices using individual heating elements and a resilient member to force the individual heating elements into compressive... |
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US20050236693 |
Wafer stabilization device and associated production method
A stabilization device and method for stabilizing a workpiece such as a thin film wafer is presented. The thin wafer is fixed and oriented in planar fashion. The stabilization device is realized... |
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US20130154112 |
Method for Forming Isolation Trenches in Micro-Bump Interconnect Structures and Devices Obtained Thereof
The disclosure is related to a substrate suitable for use in a stack of interconnected substrates, comprising: a base layer having a front side and a back side surface parallel to the plane of the... |
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US20120211770 |
SEMICONDUCTOR DEVICE, COMBINED SUBSTRATE, AND METHODS FOR MANUFACTURING THEM
There are provided a semiconductor device of low cost and high quality, a combined substrate used for manufacturing the semiconductor device, and methods for manufacturing them. The method for... |
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US20050233544 |
Method of smoothing the outline of a useful layer of material transferred onto a support substrate
A method of providing a regular outline in a useful layer of material that is transferred from a source substrate onto a support substrate during the fabrication of a composite substrate for... |
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US20150155165 |
METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER
A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer... |
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US20100308471 |
ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
An electronic device includes: a first substrate; and a second substrate on which the first substrate is mounted and which is electrically connected to the first substrate in at least one... |
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US20080164606 |
SPACERS FOR WAFER BONDING
A deformable spacer for wafer bonding applications is disclosed. The spacer may be used to keep wafers separated until desired conditions are achieved. |
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US20070249098 |
Bonding plate mechanism for use in anodic bonding
A bonding plate mechanism for use in anodic bonding of first and second material sheets together, the apparatus comprising: a base including first and second spaced apart surfaces; a thermal... |
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US20060022275 |
Planar dual-gate transistor and method for fabricating a planar dual-gate transistor
A method for fabricating a double-gate transistor including defining an active area on an SOI substrate, forming a first gate region on the SOI substrate, forming source/drain regions made of... |
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US20050118788 |
Mask, method for manufacturing thereof, method for manufacturing organic electroluminescent device, and organic electroluminescent device
A mask is provided for forming a desired high-precision layer pattern on a glass substrate or the like used as a layer-formation object material. The mask includes a first substrate having a first... |
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US20110024767 |
Semiconductor Substrates, Devices and Associated Methods
Semiconductor substrates and devices having improved performance and cooling, as well as associated methods, are provided. In one aspect, for example, a semiconductor device can include a matrix... |