Matches 1 - 8 out of 8


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US20090042357 Method of selective oxygen implantation to dielectrically isolate semiconductor devices using no extra masks  
A method of fabricating integrated circuit structures utilizes selective oxygen implantation to dielectrically isolate semiconductor structures using no extra masks. Existing masks are utilized to...
US20100197047 METHOD FOR MANUFACTURING SIMOX WAFER  
At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral...
US20090057811 SIMOX WAFER MANUFACTURING METHOD AND SIMOX WAFER  
A SIMOX wafer manufacturing method which is capable of providing etching conditions to prevent surface defects (divots) from being spread. The method includes an oxygen implantation process and a...
US20100163994 SOI DEVICE WITH A BURIED INSULATING MATERIAL HAVING INCREASED ETCH RESISTIVITY  
In SOI devices, the PN junction of circuit elements, such as substrate diodes, is formed in the substrate material on the basis of the buried insulating material that provides increased etch...
US20160380001 SELECTIVE OXIDATION FOR MAKING RELAXED SILICON GERMANIUM ON INSULATOR STRUCTURES  
Methods and devices are provided to fabricate semiconductor devices with, e.g., SiGe-on-insulator structures. For example, a method for fabricating a semiconductor device includes forming a...
US20160225659 METHODS OF FORMING FIN ISOLATION REGIONS ON FINFET SEMICONDUCTOR DEVICES BY IMPLANTATION OF AN OXIDATION-RETARDING MATERIAL  
One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, the fin having a lower first section that contains an oxidation-retarding implant...
US20160071925 SEMICONDUCTOR STRUCTURE WITH AIRGAP  
A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The...
US20150294903 METHOD FOR FABRICATING MICROELECTRONIC DEVICES WITH ISOLATION TRENCHES PARTIALLY FORMED UNDER ACTIVE REGIONS  
A method of producing a microelectronic device in a substrate comprising a first semiconductor layer, a dielectric layer and a second semiconductor layer, comprising the following steps: etching a...
Matches 1 - 8 out of 8