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US20100047947 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing  
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask...
US20080258130 Beveled LED Chip with Transparent Substrate  
A light emitting diode is disclosed that includes a transparent (and potentially low conductivity) silicon carbide substrate, an active structure formed from the Group III nitride material system...
US20080305569 Semiconductor Device and a Method of Manufacturing the Same  
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film...
US20080224168 Intride-based semiconductor light emitting diode and method of manufacturing the same  
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are...
US20070048894 System and method for reduced material pileup  
An embodiment of the invention pertains to a two stage process that facilitates the formation of a substantially uniform layer. A material is isotropically deposited on a re-entry shaped surface...
US20070141740 METHOD FOR DAMAGE AVOIDANCE IN TRANSFERRING AN ULTRA-THIN LAYER OF CRYSTALLINE MATERIAL WITH HIGH CRYSTALLINE QUALITY  
A method for damage avoidance in transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained...
US20110124139 METHOD FOR MANUFACTURING FREE-STANDING SUBSTRATE AND FREE-STANDING LIGHT-EMITTING DEVICE  
The present invention provides a method for manufacturing a free-standing substrate, comprising: growing a first layer having a sacrificial layer on a growth substrate; patterning the first layer...
US20120122257 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, FABRICATION METHOD THEREOF, CONVEX PART FORMED ON BACKING, AND CONVEX PART FORMATION METHOD FOR BACKING  
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask...
US20130309795 METHOD FOR MANUFACTURING LED CHIP WITH INCLINED SIDE SURFACE  
A method for manufacturing an LED chip is disclosed wherein a substrate is provided. A first semi-conductor layer is formed on the substrate. A photoresist layer with an inverted truncated cone...
US20130260490 Light Emitting Device Substrate with Inclined Sidewalls  
A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The...
US20150228852 LIGHT EMITTING DEVICE PACKAGE  
A light emitting device package is provided. The light emitting device includes: a substrate; a light emitting device disposed at one side of the substrate; and a formation layer formed on the...
US20090142869 Method of producing semiconductor optical device  
Si atoms obtained by thermal decomposition of SiH4 are adsorbed in advance on one surface of a semiconductor substrate and side surfaces of a semiconductor mesa part. Thereby, prior to the growth...
US20150380606 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor light-emitting element includes: a double-mesa structure of semiconductor formed to have a cylindrical cross section; an insulating member formed to fill a space surrounding the...
US20150303396 METHOD AND SYSTEM FOR AN ORGANIC LIGHT EMITTING DIODE STRUCTURE  
Disclosed is a system and method for a nano-pillar geometry for increased light extraction properties of an Organic Light Emitting Diode.
US20150280064 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME  
Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a...
US20150087096 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE  
A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active...
US20140027802 LIGHT EMITTING DIODE WITH UNDERCUT AND MANUFACTURING METHOD THEREOF  
An LED with undercut includes a first semiconductor layer, an illumination layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer includes a...
US20130017638 PROCESS FOR MANUFACTURING BURIED HETERO-STRUCTURE LASER DIODES  
A process for manufacturing buried hetero-structure laser diodes includes the steps of forming a stacked semiconductor layer on a substrate; forming a mask layer on the stacked semiconductor...
US20110211604 Completely Self-Adjusted Surface-Emitting Semiconductor Laser For Surface Mounting Having Optimized Properties  
The present invention relates to a surface-emitting semiconductor laser having a vertical resonator, comprising a substrate base section (1) and a mesa (M) arranged on and/or at the substrate base...
US20110124140 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor laser device includes a chip obtained from a substrate and a semiconductor multi-layer formed on the substrate. The semiconductor multi-layer is formed from a plurality of...

Matches 1 - 20 out of 20