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US20150077882 READER STRUCTURE  
Implementations described and claimed herein provide a synthetic antiferromagnetic (SAF) layer with canted pinning, wherein a down-track direction facing surface of the SAF layer has edges that...
US20090110960 Method of etching magnetoresistive film by using a plurality of metal hard masks  
This etching method comprises the steps of forming first and second hard masks made of materials different from each other successively on a magnetoresistive film; forming a resist having a lower...
US20070196696 Thin film memory device having a variable resistance  
A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate...
US20080014467 Thin film magnetic head  
For a Tunneling Magnetoresistive (TMR) element, an electrode is used as a magnetic shield or vice versa. This can pose a problem in that noise from a heater source or electromagnetic induction has...
Matches 1 - 4 out of 4