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US20140377588 ENHANCED PINNING PROPERTY BY INSERTED SI SEED LAYER  
The embodiments of the present invention generally relate to a magnetic head having a silicon seed layer disposed between a lower shield and a metallic underlayer to enhance the unidirectional...
US20100035086 IRON NITRIDE MAGNETIC POWDER AND MAGNETIC RECORDING MEDIUM COMPRISING THE SAME  
A spherical or ellipsoidal iron nitride magnetic powder having a core comprising iron nitride including a Fe16N2 phase as a primary phase and an outer layer containing yttrium (Y) and aluminum...
US20120075927 Magnetic Element Having Perpendicular Anisotropy With Enhanced Efficiency  
Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a...
US20140356648 STACK WITH WIDE SEED LAYER  
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the...
US20130288076 STACK WITH WIDE SEED LAYER  
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the...
US20150055251 READER STRUCTURE  
An apparatus disclosed herein includes a sensor with a free layer having cross-track easy axis anisotropy.
US20120058367 SPIN INJECTION SOURCE AND MANUFACTURING METHOD THEREOF  
The spin injection source comprises a nonmagnetic conductor, an MgO film, and a ferromagnet, and injects spin from the ferromagnet to the nonmagnetic conductor. The MgO film is annealed at...
US20140120374 MAGNETIC DEVICES HAVING SHIELDS INCLUDING A NICKEL ALLOY  
A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at...
US20140302345 MAGNETORESISTIVE SENSOR WITH STOP-LAYERS  
Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during...
US20150154990 SCISSOR SENSOR WITH BACK EDGE BIAS STRUCTURE AND NOVEL DIELECTRIC LAYER  
A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a...
US20130071691 Magnetic Sensor With Enhanced Magnetoresistance Ratio  
Various embodiments of the present invention are generally directed to a magnetically responsive lamination that may be constructed with a spacer layer disposed between a first and second...
US20140004383 CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS  
A current-perpendicular-to-plane (CPP) read sensor with Co—Fe buffer layers is proposed to improve pinning and magnetoresistance properties. The read sensor comprises first and second Co—Fe buffer...
US20110236723 CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS  
A current-perpendicular-to-plane (CPP) read sensor with Co—Fe buffer layers is proposed to improve pinning and magnetoresistance properties. The read sensor comprises first and second Co—Fe buffer...
US20110027618 Fabrication of magnetoresistive sensors and electronic lapping guides  
The subject matter disclosed herein provides methods for manufacturing an electronic lapping guide and a magnetic read head assembly. The magnetoresistive head assembly includes a sensing element...
US20120225321 Electrodeposition of FeCoNiV Films with High Resistivity and High Saturation Magnetization  
A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y,...
US20130302649 CO2FE-BASED HEUSLER ALLOY AND SPINTRONICS DEVICES USING THE SAME  
[Problem to be Solved] To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than...
US20120156522 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED SEED LAYER STRUCTURE FOR HARD BIAS LAYER  
A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally...
US20120009440 MAGNETORESISTANCE EFFECT ELEMENT WITH A LAYER CONTAINING AN OXIDE AS A PRINCIPAL COMPONENT AND CONTAINING A MAGNETIC TRANSITION METAL ELEMENT WHICH DOES NOT BOND TO OXYGEN  
There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The...
US20120129008 MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY  
A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a...
US20100330394 CCP-CPP MAGNETORESISTIVE READER WITH HIGH GMR VALUE  
A magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA) includes a first magnetic layer, a second magnetic layer, and a current...
US20110200845 CURRENT PERPENDICULAR TO THE PLANE READER WITH IMPROVED GIANT MAGNETO-RESISTANCE  
In some embodiments, a current perpendicular to the plane giant magneto-resistance (CPP GMR) read sensor may include a reference layer and/or a free layer that includes a plurality of sub-layers....
US20090130491 Magneto-resistive element for a magneto-resistive device and methof of manufacturing thereof  
A magnetoresistive element (MR element) for reading a change in a magnetic field of a magnetic recording medium includes first and second electrode layers for providing a sensing current, which...
US20120212860 MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING GALLIUM OXIDE LAYER WITH METAL ELEMENT  
A magneto-resistive effect (MR) element includes: first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field; and...
US20110117388 Multiple CCP layers in magnetic read head devices  
An improved CPP magnetic read device whose oxide barrier comprises at least two separate CCP layers is disclosed. These two CCP layers differ in the PIT and IAO treatments that they received...
US20130236744 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH MULTILAYER REFERENCE LAYER INCLUDING A HEUSLER ALLOY  
A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned...
US20130171475 Magnetic Head Having Stable Shield Domain Structure  
A manner for stabilizing the shield domain structure is described that employs the magnetic field of a hard bias layer. More particularly, it has been found that the shield domain structure is...
US20140335377 CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HALF METAL ALLOYS FOR IMPROVED SENSOR PERFORMANCE  
A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be...
US20140335376 ELECTRICALLY CONDUCTIVE UNDERLAYER TO GROW FEPT GRANULAR MEDIA WITH (001) TEXTURE ON GLASS SUBSTRATES  
A perpendicular magnetic recording medium, comprising: a substrate; a buffer layer deposited in a first orientation on top of the substrate; an underlayer deposited in a second orientation on top...
US20130128381 MAGNETORESISTIVE HEAD HAVING PERPENDICULARLY OFFSET ANISOTROPY FILMS AND A HARD DISK DRIVE USING THE SAME  
In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet...
US20120212859 MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING MAIN SPACER LAYER CONTAINING GALLIUM OXIDE AND METAL INTERMEDIATE LAYER  
A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field,...
US20120237796 MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER  
A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a...
US20080102316 Magneto-resistive magnetic read head and storage apparatus using the same magnetic read head  
A magnetic read head has a first free-magnetic layer, a second free-magnetic layer, a non-magnetic layer provided between the first free-magnetic layer and the second free-magnetic layer, and a...
US20120015214 MAGNETO-RESISTANCE EFFECT ELEMENT  
A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group...
US20130029182 CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording  
A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance...
US20080259507 Tunneling Magnetoresistive (TMR) Sensor with A Co-Fe-B Free Layer Having A Negative Saturation Magnetostriction  
A tunneling magnetoresistive (TMR) sensor with a free layer made of a Co—Fe—B alloy is disclosed. After annealing at a temperature of less than 300° C., the Co—Fe—B free layer exhibits a negative...
US20110135961 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TRANSDUCER HAVING AN IMPROVED READ SENSOR  
A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to...
US20090286106 READ SENSORS AND METHODS OF MAKING SAME WITH BACK-EDGE MILLING AND REFILLING  
Methods and apparatus provide a refill configuration adjacent a back-edge that defines a height of a magnetoresistive read sensor. Milling through layers of the sensor forms the back-edge and may...
US20080241597 RADIO-FREQUENCY OSCILLATOR WITH SPIN-POLARISED CURRENT  
This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarised electric current flows. This device comprises a stack of at least a first so-called “anchored” magnetic...
US20080261079 THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF  
The present invention relates to a thin-film device whose bump has an improved surface property. A thin-film element of the thin-film device includes at least one of an electromagnetic conversion...
US20120320473 MAGNETIC SENSOR HAVING A HARD BIAS SEED STRUCTURE  
A magnetic sensor having a novel hard bias structure that provides reduced gap spacing for increased data density. The magnetic sensor includes a sensor stack with first and second sides formed on...
US20080171232 Magnetic head and method of producing the same  
In the magnetic head, a lower shielding layer and an upper shielding layer of a read-head and a lower magnetic pole of a write-head are electrically connected to a substrate so as to prevent...
US20090191430 EXCHANGE COUPLED FILM, MAGNETORESISTIVE ELEMENT, AND THIN-FILM MAGNETIC HEAD  
The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an...
US20120129007 Fabrication of a coercivity hard bias using FePt containing film  
The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping...
US20140212691 MAGNETIC ELEMENT ELECTRODE LAMINATION  
Various embodiments may be generally directed to a magnetic element capable of optimized magnetoresistive data reading. Such a magnetic element may be configured at least with a magnetoresistive...
US20120127603 MAGNETIC TUNNEL JUNCTION HAVING A MAGNETIC INSERTION LAYER AND METHODS OF PRODUCING THE SAME  
According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first...
US20120164484 MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING MAIN SPACER LAYER CONTAINING GALLIUM OXIDE AND NONMAGNETIC LAYER  
A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic...
US20090169732 PROTECTING HARD BIAS MAGNETS DURING A CMP PROCESS USING A SACRIFICIAL LAYER  
Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic...
US20090052089 THIN-FILM MAGNETIC HEAD HAVING CPP STRUCTURE MAGNETO-RESISTIVE EFFECT DEVICE AND HARD DISK SYSTEM  
The thin-film magnetic head of the invention comprises a magneto-resistive effect device of the CPP (current perpendicular to plane) structure including a multilayer film comprising a stack of a...
US20080241596 Magnetoresistive Multilayer Film  
This application discloses a magnetoresistive multilayer film having the structure where an antiferromagnetic layer, a pinned-magnetization layer, a non-magnetic spacer layer and a...
US20080274379 THIN FILM DEVICE WITH LEAD CONDUCTOR FILM OF INCREASED SURFACE AREA  
The present invention relates to a thin-film device including a thin-film element and a lead conductor film. The thin-film element and the lead conductor film are embedded in an insulating film....

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