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US20080298416 Mesa Vertical-Cavity Surface-Emitting Laser  
The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a...
US20090268770 Gain Clamped Optical Device For Emitting LED Mode Light  
A gain clamped optical device includes a semiconductor stack and a resonant cavity configured to emit stimulated light. A window created in the optical device is configured to emit the stimulated...
US20130058370 PLANAR, HIGH NA, LOW LOSS TRANSMITTING OR REFLECTING LENSES USING SUB-WAVELENGTH HIGH CONTRAST GRATING  
Planar lenses and reflectors are described comprising subwavelength high-contrast gratings (HCG) having high index of refraction grating elements spaced apart from one another in straight and/or...
US20100316083 SUB-WAVELENGTH GRATING INTEGRATED VCSEL  
A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating...
US20100316079 SUB-WAVELENGTH GRATING INTEGRATED VCSEL  
A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating...
US20070002917 Electro-absorption modulator integrated with a vertical cavity surface emitting laser  
An electro-absorption modulator integrated with a vertical cavity surface emitting laser (VCSEL). An electro-absorption modulator (EAM) is integrated or grown on a VCSEL. The electro-absorption...
US20090016387 Apparatus for providing optical radiation  
In one embodiment, a photo-darkening resistant optical fibre includes a waveguide having a numerical aperture less than 0.15. The waveguide includes a core having a refractive index n1 and a...
US20070091959 Optimizing the increased oxide aperture relative to the laser dimensions  
The present invention provides a VCSEL device (100) and a method of fabricating the same, wherein two or more characteristic device dimensions (DM, DP) are correlated with each other so as to...
US20090116522 Enhanced efficiency laterally-coupled distributed feedback laser  
The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral...
US20090262765 SMALL DIMENSION HIGH-EFFICIENCY HIGH-SPEED VERTICAL-CAVITY SURFACE-EMITTING LASERS  
A Vertical-Cavity Surface-Emitting Laser (VCSEL) is disclosed, comprising an optical cavity bounded by a top mirror and a bottom mirror, wherein the top mirror has multiple layers of alternating...
US20090010295 Distributed Feedback Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technology and the Manufacture Method of the Same  
Using sampled Bragg grating structure, the present invention proposes a distributed feedback (DFB) semiconductor laser based on reconstruction-equivalent-chirp technology. Namely, the Bragg...
US20070036188 Semiconductor laser, optical element, laser device, and method of controlling semiconductor laser  
A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a...
US20090213892 VCSEL WITH REDUCED LIGHT SCATTERING WITHIN OPTICAL CAVITY  
A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor...
US20080187018 DISTRIBUTED FEEDBACK LASERS FORMED VIA ASPECT RATIO TRAPPING  
Structures including dielectric diffraction gratings. In some embodiments, laser devices include diffraction gratings defined by openings formed in a dielectric material.
US20090067465 MULTIPLE CAVITY ETCHED-FACET DFB LASERS  
A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative...
US20060165147 Single mode distributed feedback laser  
A single mode distributed feedback laser for producing a single mode light comprises a semiconductor substrate; a lower clad positioned on the semiconductor substrate and having a plurality of...
US20130250207 FREEFORM-PRISM EYEPIECE WITH ILLUMINATION WAVEGUIDE  
An imaging panel includes a light source, a reflective image-forming array, and a freeform-prism eyepiece. The light source includes a light emitter and a waveguide having a grating. The waveguide...
US20080253421 High-Power Semiconductor Laser  
A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with...
US20070223554 External cavity laser  
Embodiments of systems and methods are provided for a tunable laser device. The tunable laser device may include a diffraction grating connected to a pivot arm that pivots the diffraction grating...
US20110150020 II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD  
Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes...
US20100034232 ELECTRICALLY PUMPED ND3+ DOPED SOLID LASER  
A laser amplification structure comprising an active medium and at least two electrodes disposed on either side of the active medium, the active medium comprising a first layer of a silicon oxide...
US20100246617 NARROW SURFACE CORRUGATED GRATING  
Narrow surface corrugated gratings for integrated optical components and their method of manufacture. An embodiment includes a grating having a width narrower than a width of the waveguide on...
US20060215720 Quantum cascade laser with grating formed by a periodic variation in doping  
Doped diffraction gratings for use in quantum cascade lasers and mid-infrared wavelength vertical cavity surface emitting lasers can be made by introducing periodic variations in the doping levels...
US20070030874 Surface-emitting laser element and laser module using the same  
A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a...
US20130050686 GAP DISTRIBUTED BRAGG REFLECTORS  
A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias...
US20090135877 Lighting Device Equipped with Coaxial Line Laser Diodes and Fabrication Method Thereof  
The present invention provides a fabrication method of coaxial line laser diodes and a coaxial lighting optical fiber which disperses and guides uniform emission of light from a coaxial line laser...
US20060268954 LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION  
Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The...
US20090285245 FIBER-BASED ULTRAFAST LASER  
An ultrafast laser system includes a seed laser that provides a signal laser pulse and a fiber-based first chirped reflective Bragg grating that reflects the signal laser pulse propagating along a...
US20090296752 MULTIPLE EMITTER VECSEL  
An extended cavity surface emitting laser has a first laser die with a first cavity and a first gain element and a second laser die with a second cavity and a second gain element. The first and...
US20070195849 Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating  
In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is...
US20090168827 Nitride semiconductor laser chip and method of fabricating same  
A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage....
US20070041414 Semiconductor laser showing reduced sensitivity to disturbances  
A semiconductor laser, contains at least one absorbing layer (8) in its laser resonator, said absorbing layer reducing the transmission TRes of the laser radiation (10) in the laser resonator for...
US20080123711 Nitride light-emitting device  
A bottom-emitting nitride light-emitting device with enhanced light extraction efficiency is provided. The increased light output is provided by the reflector that redirects upward-going light...
US20090080466 COHERENT LIGHT SOURCE AND RECORDING AND REPRODUCTION DEVICE USING THE SAME  
For performing hologram recording or reproduction, an oscillation wavelength half value width Δλ of a coherent light source 21 satisfies a relationship of Δλ<λ2/(S×2 sin θ), when a substantial...
US20060280220 Optically-pumped vertical external cavity surface emitting laser  
A vertical external cavity surface emitting laser (VECSEL) is provided in which a pump laser beam is incident on a laser chip at a right angle. In the surface emitting laser, a laser chip emits...
US20110228805 TWO-CAVITY SURFACE-EMITTING LASER  
A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium (10) having an emission maximum at a first wavelength (λ1), wherein a first reflector (18) is arranged below the...
US20090059988 SEMICONDUCTOR LASER AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE  
A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and...
US20050185689 Optoelectronic device having a Discrete Bragg Reflector and an electro-absorption modulator  
A semiconductor component includes a waveguide section for guiding optical radiation, a Distributed Bragg Reflector (DBR) section for wavelength-selecting optical radiation received from the...
US20090238229 NITRIDE SEMICONDUCTOR LASER ELEMENT AND EXTERNAL-CAVITY SEMICONDUCTOR LASER DEVICE  
Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride...
US20090135876 SURFACE-EMITTING LASER AND OPTICAL APPARATUS FORMED BY USING SURFACE-EMITTING LASER  
A surface-emitting laser has an active layer between a first distributed Bragg reflector and a second distributed Bragg reflector. The first distributed Bragg reflector is formed so as to have a...
US20070217466 Two-dimensional photonic crystal surface light emitting laser  
A surface-emitting laser according to the present invention includes a laminated body between a first electrode 471 and a second electrode 472. The laminated body includes an active layer 43 and a...
US20090161717 BRAGG REFLECTOR GRATING  
A Bragg reflector grating comprises a plurality of chirped grating sections (65-72), in which at least a first chirped grating section and a second chirped grating section have differing ranges of...
US20100034233 SURFACE-EMISSION TYPE SEMICONDUCTOR LASER  
The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the...
US20100296543 FLEXIBLE MICROCAVITY STRUCTURE MADE OF ORGANIC MATERIALS USING SPIN-COATING TECHNIQUE AND METHOD OF MAKING  
A flexible microcavity structure made of organic materials using spin-coating technique for allowing large area structures using a roll-to-roll process. The structure includes at least one first...
US20060109884 Distributed feedback semiconductor laser and method for manufacturing the same  
A distributed feedback semiconductor laser oscillating in a single mode and a method for manufacturing the same is disclosed. The distributed feedback semiconductor laser includes an active layer;...
US20140294031 OPTICAL DEVICE AND OPTICAL MODULE  
An optical device includes an active layer disposed over a semiconductor substrate, a diffraction grating disposed over the active layer, a clad layer partly disposed over the diffraction grating,...
US20070127536 SEMICONDUCTOR HAVING ENHANCED CARBON DOPING  
Semiconductors with enhanced strain. One embodiment includes a semiconductor device. The semiconductor device may include an epitaxial structure. The epitaxial structure includes one or more...
US20110164645 Optoelectronic Device Having Light Source Emitter and Receiver Integrated  
An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting...
US20090154517 HYBRID LASER DIODE FOR SINGLE MODE OPERATION AND METHOD OF FABRICATING THE SAME  
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on...
US20080259985 Method And Apparatus For Modifying Out Of Band Reflection For A Laser Element  
A method and apparatus for modifying the out of band reflection of a laser element is described. The laser element includes an active medium excited by optical pumping means to produce stimulation...

Matches 1 - 50 out of 238 1 2 3 4 5 >