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US20100008389 Inverted composite slab sandwich laser gain medium  
The present invention pertains to a composite slab laser gain medium with an undoped core and at least one doped gain medium section disposed on at least one side of that core. The gain medium is...
US20070153857 High power semiconductor device to output light with low-absorbtive facet window  
A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN...
US20090086783 NITRIDE BASED SEMICONDUCTOR LASER DEVICE  
One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and...
US20090274187 Semiconductor Laser, Module and Optical Transmitter  
A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate....
US20100046568 QUANTUM CASCADE LASER AMPLIFIER WITH AN ANTI-REFLECTION COATING INCLUDING A LAYER OF YTTRIUM FLUORIDE  
A quantic cascade laser amplifier (12) having an active zone (20) includes a stack of raw layers of semi-conductor materials formed in an epitaxial manner on a substrate layer (16) of indium...
US20100080107 METHOD FOR PRODUCING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, AND OPTICAL DISK DRIVE  
A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate...
US20100054292 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF  
A first semiconductor laser element is formed on a surface of a substrate and has a first cavity facet. The first semiconductor laser element has a first recess in the first cavity facet except...
US20070189349 Single mode laser  
A laser comprising a lasing cavity, having a lasing medium and primary optical feedback means in the form of a facet at either end of the cavity is described. The laser includes secondary optical...
US20090262774 Sliced Fiber Bragg grating used as external cavity for semiconductor laser and solid state laser  
A Fiber Bragg grating is sliced into small segments (such as 1 mm in length), the sliced fiber Bragg grating segments are used as external cavities for lasers to stabilize their center wavelength....
US20060159146 Semiconductor laser diode  
In a semiconductor laser diode, a mount portion is erected on a support member and a semiconductor laser diode chip is mounted on the mount portion. A window is formed on a cap, and a laser beam...
US20070211776 SEMICONDUCTOR LASER HAVING IMPROVED FACETS OF THE RESONATOR  
In a semiconductor laser having a first facet (front facet) through which laser light is emitted and a second facet (rear facet), and a first coating film composed of a single-layer dielectric...
US20120008647 LIGHT EMITTING DEVICE  
Disclosed is a white light emitting device including a semiconductor light emitting element configured to emit near ultraviolet light having a peak wavelength ranging from 380 to 410 nm, a first...
US20110317734 SPATIAL FILTERS  
An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a...
US20060274804 Spatial filters  
An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a...
US20140286370 HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES  
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to...
US20140286368 HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES  
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to...
US20070166852 Diode-pumped microlasers including resonator microchips and methods for producing the same  
A patent foramen ovale closure device, method of delivering and a delivery system are provided. The device may include a closure device releasably connectable to an actuator The device may include...
US20090213891 SEMICONDUCTOR LASER  
A GaN semiconductor laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end...
US20080181277 Semiconductor laser and method for producing the same  
A semiconductor laser comprising a laser-active layer sequence (1) having a first main face (1003), on which is arranged a heat conducting layer (3) containing carbon nanotubes (30) and a method...
US20060093005 Semiconductor laser  
A semiconductor laser has at least one laser-beam-emitting surface including a multilayer dielectric film composed of layers of different dielectric materials. The multilayer dielectric film has a...
US20050058170 Semiconductor laser element and semiconductor laser element manufacturing method  
Disclosed is a semiconductor laser element including: a double heterojunction structure having a p-type clad layer; a second p-type clad layer formed on the double heterojunction structure, having...
US20130250986 OPTICALLY PUMPED SURFACE EMITTING LASERS INCORPORATING HIGH REFLECTIVITY/ BANDWIDTH LIMITED REFLECTOR  
Optically pumped laser structures incorporate reflectors that have high reflectivity and are bandwidth limited to a relatively narrow band around the central laser radiation wavelength. In some...
US20100034231 SEMICONDUCTOR LASER  
A semiconductor laser, which emits a laser beam from an edge surface of an active layer (5), is provided with a protective film (20), arranged on the edge surface from which the laser beam is...
US20120213241 Broad Area Laser Having an Epitaxial Stack of Layers and Method for the Production Thereof  
A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has...
US20080144686 Surface emitting laser  
A surface emitting laser includes an n-side multilayered reflection film and an active layer which are formed on a substrate. On the active layer, a mesa region is formed by sequentially stacking...
US20090034573 SEMICONDUCTOR LASER DEVICE AND FABRICATION METHOD FOR THE SAME  
The semiconductor laser device includes a cavity structure having a first clad layer, an active layer and a second clad layer formed on a substrate. The second clad layer has a stripe portion...
US20140161147 SEMICONDUCTOR LIGHT EMITTING DEVICES WITH DENSELY PACKED PHOSPHOR LAYER AT LIGHT EMITTING SURFACE  
An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. The phosphor-containing material comprises at least two...
US20090268762 Optical intergrated device  
An object of the invention is to provide an optical integrated device which enables to supply a wide range of variable wavelength and to reduce the coupling loss. The optical integrated circuit...
US20100014550 NITRIDE SEMICONDUCTOR LASER DEVICE  
A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity...
US20060291516 Optical semiconductor device and optical module using thereof  
The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are...
US20110122909 ADHESIVE PROTECTIVE COATING WITH SUPRESSED REFLECTIVITY  
The disclosure is directed to a thin-film for use in below 300 nm laser systems that can be applied to a variety of substrate types. The thin film consists of a blocking layer of a selected...
US20100172389 TWO-DIMENSIONAL PHOTONIC CRYSTAL PLANE EMISSION LASER  
A two-dimensional photonic crystal plane emission laser of the invention includes a two-dimensional photonic crystal which has a two-dimensional photonic crystal area and a light reflecting area,...
US20060262823 Semiconductor laser device  
To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser...
US20110200065 NITRIDE BASED SEMICONDUCTOR LASER DEVICE  
One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the...
US20090323750 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP  
A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current...
US20100265981 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER  
A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and...
US20100246623 SEMICONDUCTOR LASER DEVICE  
A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with an...
US20100238784 Multiwavelength semiconductor laser and optical recording/reproducing device  
The present invention provides a multiwavelength semiconductor laser capable of easily setting reflectance in a predetermined range at different oscillation wavelengths on a main emission edge...
US20100189151 PLANAR WAVEGUIDE LASER DEVICE  
A planar waveguide laser device forms a waveguide by a plate-like laser medium having birefringence and clad attached to at least one of the surfaces of the laser medium perpendicular to its...
US20100158066 NITRIDE SEMICONDUCTOR LASER ELEMENT  
A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is...
US20100127154 NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND OPTICAL PICKUP  
A nitride-based semiconductor laser device includes a facet coating film including an alteration preventing layer formed on a light reflecting side facet of a nitride-based semiconductor element...
US20100118908 SEMICONDUCTOR LASER DEVICE  
A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light...
US20100111130 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first...
US20090086782 SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME  
On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active...
US20070274360 Semiconductor laser element and semiconductor laser device  
A semiconductor laser element includes a semiconductor layer, an insulating layer and an electrode. The semiconductor layer is formed on a substrate, and includes a raised portion extending along...
US20160087153 ACTIVE REGION CONTAINING NANODOTS (ALSO REFERRED TO AS "QUANTUM DOTS") IN MOTHER CRYSTAL FORMED OF ZINC BLENDE-TYPE (ALSO REFERRED TO AS "CUBIC CRYSTAL-TYPE") AlyInxGal-y-xN CRYSTAL(Y . 0, X>0) GROWN ON Si SUBSTRATE, AND LIGHTEMITTING DEVICE USING THE SAME (LED AND LD)  
A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si...
US20160036197 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE  
A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide...
US20150357789 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF  
A method of manufacturing a semiconductor laser device includes the steps of: preparing the semiconductor laser bar body including a top surface, an undersurface, two mutually opposing facets, and...
US20150244147 METHOD FOR PRODUCING A SEMICONDUCTOR LASER DIODE, AND SEMICONDUCTOR LASER DIODE  
A method for producing a semiconductor laser diode is specified, comprising the following steps:—epitaxial iv growing a semiconductor layer sequence (2) having at least one active layer (3) on a...
US20150124847 NITRIDE SEMICONDUCTOR LASER ELEMENT  
Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element...
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