Matches 1 - 37 out of 37


Match Document Document Title
US20090245313 MULTI-BEAM SEMICONDUCTOR LASER  
An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N≧2), wherein a separation groove that electrically...
US20080267238 SEMICONDUCTOR LASER DIODE ELEMENT AND METHOD OF MANUFACTURING THE SAME  
A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge...
US20120106583 VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER  
A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN...
US20110261856 VERTICAL-CAVITY SURFACE-EMITTING LASER  
A VCSEL includes a grating layer configured with a non-periodic, sub-wavelength grating, in which the non-periodic, sub-wavelength grating includes at least one first section configured to have a...
US20110164642 LASER DIODE WITH RIDGE WAVEGUIDE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME  
An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge...
US20100290496 NITRIDE SEMICONDUCTOR LASER DEVICE  
A nitride semiconductor laser device includes: an active layer made of a nitride formed on a semiconductor substrate; a stripe-shaped ridge waveguide including a cladding layer having a ridge...
US20100290495 LASER DEVICE, A LIGHT SIGNAL GENERATING DEVICE, AND AN OPTICAL RESONATOR AND A METHOD FOR PRODUCING LIGHT  
A laser device (1) comprises a ridge waveguide (2) comprising an upper cladding layer (5) and a lower cladding layer (6), between which is located an active layer (7). A ridge (8) formed in the...
US20100278207 SEMICONDUCTOR LASER ELEMENT  
A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second...
US20100202486 Vertical cavity surface emitting laser and method of manufacturing thereof  
A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity...
US20100111129 LASER DIODE AND METHOD OF MANUFACTURING THE SAME  
A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability...
US20120170084 SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS  
A surface-emitting semiconductor laser includes a substrate, a first semiconductor multi-layered reflector of a first conductivity type, an active region, a second semiconductor multi-layered...
US20120114003 LASER DEVICE, A LIGHT SIGNAL GENERATION DEVICE, AND AN OPTICAL RESONATOR AND A METHOD FOR PRODUCING LIGHT  
A laser device includes a ridge waveguide having an active layer between upper and lower cladding layers. A ridge formed in the upper cladding layer defines the width of a light guiding region in...
US20120082178 Vertical cavity surface emitting laser and method for manufacturing the same  
A vertical cavity surface emitting laser capable of high-speed modulation and stabilized control of polarization direction of the laser light is provided, including a resonator which is formed by...
US20120057902 METHOD OF MANUFACTURING SURFACE EMITTING LASER, AND SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE AND IMAGE FORMING APPARATUS  
A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper...
US20110317733 Nitride semiconductor laser chip and method of fabrication thereof  
A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride...
US20110304684 SURFACE EMITTING LASER DEVICE, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, IMAGE FORMING APPARATUS, AND METHOD OF MANUFACTURING THE SURFACE EMITTING LASER DEVICE  
A surface emitting laser device includes a substrate and plural semiconductor layers laminated on the substrate, the plural semiconductor layers including a first semiconductor multi-layer film...
US20110298006 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured...
US20110292959 SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor laser device includes a semiconductor laminated film including a ridge stripe portion. The semiconductor laminated film includes a first scribed level-different portion formed in a...
US20110280268 LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION  
A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the...
US20110217077 SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS  
A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit...
US20110216799 SEMICONDUCTOR LASER DEVICE  
According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type...
US20110216798 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME  
Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser...
US20110182315 Surface-emitting semiconductor laser and manufacturing method thereof  
A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer...
US20110182314 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, AND OPTICAL TRANSMISSION DEVICE  
A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second...
US20110150022 GAN LASER ELEMENT  
In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe...
US20110142090 LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE  
A laser diode includes: a substrate; a semiconductor layer including a lower cladding layer, an active layer, and an upper cladding layer; a strip-shaped ridge provided on an upper cladding layer...
US20110142089 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE DEVICE  
A first semiconductor layer, an active layer, a second semiconductor layer, and a contact layer are sequentially stacked on a substrate. A ridge portion extending between both facets of a...
US20110142085 Coupled Cavity Laser Diode for Generating Chaotic Signals  
A chaotic light generator device comprises laser structures integrated on a common substrate. Each laser structure comprises a ridge of light amplifying material that forms a waveguide extending...
US20110116526 SEMICONDUCTOR OPTICAL DEVICE  
By forming upper-bank patterns made of Au with a thickness of 1.5 μm or larger on bank portions, a solder material on a submount and a surface of a conductive layer in an upper part of a ridge...
US20110090928 LASER DIODE  
A laser diode includes an n-type semiconductor region, a p-type semiconductor region, a semiconductor mesa provided between the n-type semiconductor region and the p-type semiconductor region, the...
US20110080932 Laser diode and laser diode device  
A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an...
US20110026557 METHOD OF MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF MANUFACTURING LASER ARRAY, VERTICAL CAVITY SURFACE EMITTING LASER AND LASER ARRAY, AND IMAGE FORMING APPARATUS WITH LASER ARRAY  
A method of manufacturing a vertical cavity surface emitting laser of a mesa structure, the method comprises: sequentially laminating on a substrate a plurality of semiconductor layers including a...
US20110013660 OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY  
An optoelectronic semiconductor body comprises a substrate (10), which has on a first main area (12) an epitaxial semiconductor layer sequence (20), suitable for generating electromagnetic...
US20110002354 SEMICONDUCTOR LASER DEVICE  
The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along...
US20100329295 LASER DIODE  
A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in...
US20100316081 VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) DEVICE AND THE METHOD OF MANUFACTURING THEREOF  
A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second...
US20100303115 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE  
A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB)....

Matches 1 - 37 out of 37