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US20060002442 |
Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad are provided. The current blocking mechanism may be a reduced... |
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US20060050744 |
Enhanced raman amplification and lasing in silicon-based photonic crystals
Tunable laser devices and methods of manufacturing such devices are disclosed. air-holes with defects that form an optical waveguide. The waveguide has a cross-sectional area whose dimensions are... |
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US20110080932 |
Laser diode and laser diode device
A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an... |
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US20100284434 |
EDGE EMITTING SEMICONDUCTOR LASER CHIP HAVING AT LEAST ONE CURRENT BARRIER
An edge emitting semiconductor laser chip includes at least one contact strip, wherein the contact strip has a width B, an active zone, in which electromagnetic radiation is generated during the... |
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US20140050244 |
SUPERLUMINESCENT DIODE
A superluminescent diode has, above a substrate, a layered portion including at least a first cladding layer, a luminescent layer, and a second cladding layer in this order, and an optical... |
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US20100008393 |
GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND EPITAXIAL WAFER
The group II nitride semiconductor light-emitting device includes: a gallium nitride based semiconductor region of n-type; a p-type gallium nitride based semiconductor region; a hole-blocking... |
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US20090323750 |
SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP
A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current... |
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US20070274359 |
Semiconductor laser device and method of fabricating the same
A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises... |
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US20060083280 |
Method for producing multilayers on a substrate
The invention relates to a method for producing a multilayer on a receiving substrate, including the following steps: the formation of an initial substrate comprising a first material layer formed... |
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US20060285566 |
Surface-emitting laser diode with tunnel junction and fabrication method
A surface emitting semiconductor laser diode includes a semiconductor substrate, a first reflective film provided on the semiconductor substrate, a second reflective film provided above the first... |
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US20050141579 |
Semiconductor laser and method for fabricating the same
A semiconductor laser includes an n-type semiconductor substrate, an n-type clad layer, an active layer, a p-type first clad layer, a current blocking layer, a p-type second clad layer and a... |
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US20060088072 |
Semiconductor laser apparatus
A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the... |
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US20110019709 |
Semiconductor device and method of manufacturing the same
The present invention provides a method of manufacturing a semiconductor device realizing improved yield. The semiconductor device includes: a substrate having a top face, an under face, and side... |
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US20070086499 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs... |
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US20060187976 |
Variable-wavelength semiconductor laser and gas sensor using same
A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type... |
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US20070230530 |
SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor laser device including the following: a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active... |
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US20050111507 |
Surface-emitting semiconductor laser and method of fabricating the same
A surface-emitting semiconductor laser includes a first reflection layer formed on a substrate; an active layer formed on the first reflection layer; a second reflection layer formed on the active... |
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US20070165686 |
Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method
An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP... |
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US20100085997 |
NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on an active layer made of a nitride-based semiconductor, and an electrode layer including a first... |
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US20070002914 |
Semiconductor laser diode having an asymmetric optical waveguide layer
An n-lower cladding layer, an n-optical waveguide layer, an active layer, a p-optical waveguide layer, and a p-upper cladding layer sequentially form on a substrate, wherein the thickness of the... |
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US20060193353 |
High power single mode semiconductor laser device and fabrication method thereof
The present invention relates to a high-power single-mode semiconductor laser device, in which a first conductivity-type cladding layer is formed on a semiconductor substrate. An active layer is... |
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US20070242716 |
High Power Vcsels With Transverse Mode Control
A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the... |
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US20070230529 |
SURFACE-EMITTING TYPE SEMICONDUCTOR LASER
A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; a current constricting section... |
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US20050249254 |
Current-confinement heterostructure for an epitaxial mode-confined vertical cavity surface emitting laser
A vertical-cavity surface-emitting laser comprises one or more semiconductor epitaxial phase-shifting mesa layers that are adapted to provide optical mode confinement, and that are further... |
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US20120099614 |
SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor laser device of the present invention includes: a substrate; a cladding layer of a first conductivity type formed above one of surfaces of the substrate; an active layer formed... |
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US20070253457 |
Semiconductor laser device and method for fabricating the same
A first semiconductor laser emitting light with a first wavelength and a second semiconductor laser emitting light with a second wavelength are formed on an identical substrate. Each of the... |
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US20080219312 |
QUANTUM CASCADE LASER DEVICE
In a quantum cascade laser device 1, a laminate structure 11 is formed into a stripe shape along a predetermined direction on a principal surface at one side of a substrate 10, and insulating... |
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US20060093003 |
Semiconductor laser device and process for preparing the same
Provided are a high output semiconductor laser device that is capable of inhibiting changes in far-field horizontal (FFH) due to increased output thereof, and a process for preparing the same. The... |
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US20070223549 |
High-Power Optoelectronic Device with Improved Beam Quality Incorporating A Lateral Mode Filtering Section
An optoelectronic device includes a planar active element, a vertical waveguide surrounding the active element in the vertical direction, and a lateral waveguide comprising at least one active... |
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US20110318020 |
VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL-CAVITY-SURFACE-EMITTING-LASER DEVICE, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS
A vertical cavity surface emitting laser includes a substrate, a first semiconductor multilayer film reflector formed on the substrate, an active region formed on the first semiconductor... |
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US20070031084 |
TRAFIC MONITORING SYSTEM
A system for monitoring traffic across a structure. A fiber Bragg grating (FBG) reflects a light wavelength. A mounting mechanism connects the FBG to the structure, such that physical change of... |
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US20060209915 |
Photovoltaic device
An aspect of the present invention provides a photovoltaic device having a first semiconductor layer of a first conduction type and a third semiconductor layer of a second conductivity type. At... |
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US20070030871 |
SEMICONDUCTOR DEVICE HAVING LOW RESISTANCE CONTACT TO P-TYPE SEMICONDUCTOR LAYER OF A WIDE BAND GAP COMPOUND AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device having low resistance contact to p-type semiconductor layer of a wide band gap compound and a method for manufacturing the same are provided. The semiconductor device... |
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US20060187988 |
Semiconductor Laser Device
In various aspects, a semiconductor laser device may include a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the first clad layer and... |
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US20100074291 |
Distributed Feedback Semiconductor Laser Device
A DFB laser device which can reduce influence of reflected return light and improve output characteristics and can provide a small-sized and inexpensive optical module when mounted on the optical... |
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US20050190806 |
Semiconductor laser and manufacturing method therefor
A semiconductor laser has a substrate, a laminate including at least an active layer, a ridge stripe portion on the laminate, a current blocking layer provided on lateral side surfaces of the... |
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US20050041712 |
Semiconductor laser device and production method therefor
This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and... |
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US20060193361 |
Vertical cavity surface emitting laser device having a higher optical output power
A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction... |
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US20050025206 |
Single-transverse-mode VCSEL device with array structure and fabrication method thereof
A single-transverse-mode VCSEL device with array structure and the fabrication method thereof. The single-transverse-mode VCSEL device with array structure comprises a plurality of light-emitting... |
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US20070030866 |
Semiconductor laser having spot-size converter and method of fabricating the same
A semiconductor laser having a spot-size converter (SSC) is provided. The semiconductor laser includes: a substrate; a gain region formed on the substrate to emit laser; an SSC region formed on... |
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US20110085579 |
NITRIDE SEMICONDUCTOR LASER DEVICE
A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer... |
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US20060159133 |
Fabricating method of semiconductor laser and semiconductor and semiconductor laser
A method for manufacturing a semiconductor laser is provided. The method includes the steps of sequentially growing a lower clad, a lower waveguide and a multi-quantum well on a semiconductor... |
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US20090059986 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT
A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a... |
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US20060215719 |
High Power Diode Lasers
The invention relates to ridge waveguide semiconductor diode lasers that include a substrate, a first cladding layer near the substrate, a second cladding layer near the first cladding layer, and... |
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US20060209914 |
Semiconductor device and manufacturing method thereof
In order to reduce the parasitic capacitance of the device and obtain an enhanced high-speed response characteristic while assuring the reliability of the device, a semiconductor device is... |
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US20100316080 |
SEMICONDUCTOR OPTICAL ELEMENT
A semiconductor optical element includes a p-type InP substrate doped with Zn; and a diffusion blocking layer doped with Ru, a p-type InP cladding layer, an active layer, and an n-type InP... |
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US20060045157 |
Semiconductor laser with expanded mode
Systems and methods for expanding an optical mode of a laser or optical amplifier to reduce leakage current. A waveguide layer is included in a laser that optically couples with the active region.... |
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US20110249696 |
Laser diode
There is provided a laser diode capable of setting a mesa diameter small without use of a method which loses reliability of a device, and is not easily controlled. The laser diode includes: a... |
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US20110150500 |
VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS
A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure... |
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US20090097521 |
Side Surface Light Emitting Semiconductor Element And Method Of Manufacturing The Same
A side surface light emitting semiconductor element includes: an AlGaN layer doped with Mg at a concentration equal to or less than 5×1019 cm−3; a ridge having a striped shape and formed in an... |