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US20060002442 Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures  
Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad are provided. The current blocking mechanism may be a reduced...
US20060050744 Enhanced raman amplification and lasing in silicon-based photonic crystals  
Tunable laser devices and methods of manufacturing such devices are disclosed. air-holes with defects that form an optical waveguide. The waveguide has a cross-sectional area whose dimensions are...
US20110080932 Laser diode and laser diode device  
A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an...
US20100284434 EDGE EMITTING SEMICONDUCTOR LASER CHIP HAVING AT LEAST ONE CURRENT BARRIER  
An edge emitting semiconductor laser chip includes at least one contact strip, wherein the contact strip has a width B, an active zone, in which electromagnetic radiation is generated during the...
US20140050244 SUPERLUMINESCENT DIODE  
A superluminescent diode has, above a substrate, a layered portion including at least a first cladding layer, a luminescent layer, and a second cladding layer in this order, and an optical...
US20100008393 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND EPITAXIAL WAFER  
The group II nitride semiconductor light-emitting device includes: a gallium nitride based semiconductor region of n-type; a p-type gallium nitride based semiconductor region; a hole-blocking...
US20090323750 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP  
A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current...
US20070274359 Semiconductor laser device and method of fabricating the same  
A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises...
US20060083280 Method for producing multilayers on a substrate  
The invention relates to a method for producing a multilayer on a receiving substrate, including the following steps: the formation of an initial substrate comprising a first material layer formed...
US20060285566 Surface-emitting laser diode with tunnel junction and fabrication method  
A surface emitting semiconductor laser diode includes a semiconductor substrate, a first reflective film provided on the semiconductor substrate, a second reflective film provided above the first...
US20050141579 Semiconductor laser and method for fabricating the same  
A semiconductor laser includes an n-type semiconductor substrate, an n-type clad layer, an active layer, a p-type first clad layer, a current blocking layer, a p-type second clad layer and a...
US20060088072 Semiconductor laser apparatus  
A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the...
US20110019709 Semiconductor device and method of manufacturing the same  
The present invention provides a method of manufacturing a semiconductor device realizing improved yield. The semiconductor device includes: a substrate having a top face, an under face, and side...
US20070086499 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs...
US20060187976 Variable-wavelength semiconductor laser and gas sensor using same  
A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type...
US20070230530 SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor laser device including the following: a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active...
US20050111507 Surface-emitting semiconductor laser and method of fabricating the same  
A surface-emitting semiconductor laser includes a first reflection layer formed on a substrate; an active layer formed on the first reflection layer; a second reflection layer formed on the active...
US20070165686 Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method  
An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP...
US20100085997 NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME  
A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on an active layer made of a nitride-based semiconductor, and an electrode layer including a first...
US20070002914 Semiconductor laser diode having an asymmetric optical waveguide layer  
An n-lower cladding layer, an n-optical waveguide layer, an active layer, a p-optical waveguide layer, and a p-upper cladding layer sequentially form on a substrate, wherein the thickness of the...
US20060193353 High power single mode semiconductor laser device and fabrication method thereof  
The present invention relates to a high-power single-mode semiconductor laser device, in which a first conductivity-type cladding layer is formed on a semiconductor substrate. An active layer is...
US20070242716 High Power Vcsels With Transverse Mode Control  
A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the...
US20070230529 SURFACE-EMITTING TYPE SEMICONDUCTOR LASER  
A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; a current constricting section...
US20050249254 Current-confinement heterostructure for an epitaxial mode-confined vertical cavity surface emitting laser  
A vertical-cavity surface-emitting laser comprises one or more semiconductor epitaxial phase-shifting mesa layers that are adapted to provide optical mode confinement, and that are further...
US20120099614 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor laser device of the present invention includes: a substrate; a cladding layer of a first conductivity type formed above one of surfaces of the substrate; an active layer formed...
US20070253457 Semiconductor laser device and method for fabricating the same  
A first semiconductor laser emitting light with a first wavelength and a second semiconductor laser emitting light with a second wavelength are formed on an identical substrate. Each of the...
US20080219312 QUANTUM CASCADE LASER DEVICE  
In a quantum cascade laser device 1, a laminate structure 11 is formed into a stripe shape along a predetermined direction on a principal surface at one side of a substrate 10, and insulating...
US20060093003 Semiconductor laser device and process for preparing the same  
Provided are a high output semiconductor laser device that is capable of inhibiting changes in far-field horizontal (FFH) due to increased output thereof, and a process for preparing the same. The...
US20070223549 High-Power Optoelectronic Device with Improved Beam Quality Incorporating A Lateral Mode Filtering Section  
An optoelectronic device includes a planar active element, a vertical waveguide surrounding the active element in the vertical direction, and a lateral waveguide comprising at least one active...
US20110318020 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL-CAVITY-SURFACE-EMITTING-LASER DEVICE, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS  
A vertical cavity surface emitting laser includes a substrate, a first semiconductor multilayer film reflector formed on the substrate, an active region formed on the first semiconductor...
US20070031084 TRAFIC MONITORING SYSTEM  
A system for monitoring traffic across a structure. A fiber Bragg grating (FBG) reflects a light wavelength. A mounting mechanism connects the FBG to the structure, such that physical change of...
US20060209915 Photovoltaic device  
An aspect of the present invention provides a photovoltaic device having a first semiconductor layer of a first conduction type and a third semiconductor layer of a second conductivity type. At...
US20070030871 SEMICONDUCTOR DEVICE HAVING LOW RESISTANCE CONTACT TO P-TYPE SEMICONDUCTOR LAYER OF A WIDE BAND GAP COMPOUND AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device having low resistance contact to p-type semiconductor layer of a wide band gap compound and a method for manufacturing the same are provided. The semiconductor device...
US20060187988 Semiconductor Laser Device  
In various aspects, a semiconductor laser device may include a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the first clad layer and...
US20100074291 Distributed Feedback Semiconductor Laser Device  
A DFB laser device which can reduce influence of reflected return light and improve output characteristics and can provide a small-sized and inexpensive optical module when mounted on the optical...
US20050190806 Semiconductor laser and manufacturing method therefor  
A semiconductor laser has a substrate, a laminate including at least an active layer, a ridge stripe portion on the laminate, a current blocking layer provided on lateral side surfaces of the...
US20050041712 Semiconductor laser device and production method therefor  
This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and...
US20060193361 Vertical cavity surface emitting laser device having a higher optical output power  
A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction...
US20050025206 Single-transverse-mode VCSEL device with array structure and fabrication method thereof  
A single-transverse-mode VCSEL device with array structure and the fabrication method thereof. The single-transverse-mode VCSEL device with array structure comprises a plurality of light-emitting...
US20070030866 Semiconductor laser having spot-size converter and method of fabricating the same  
A semiconductor laser having a spot-size converter (SSC) is provided. The semiconductor laser includes: a substrate; a gain region formed on the substrate to emit laser; an SSC region formed on...
US20110085579 NITRIDE SEMICONDUCTOR LASER DEVICE  
A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer...
US20060159133 Fabricating method of semiconductor laser and semiconductor and semiconductor laser  
A method for manufacturing a semiconductor laser is provided. The method includes the steps of sequentially growing a lower clad, a lower waveguide and a multi-quantum well on a semiconductor...
US20090059986 SEMICONDUCTOR LIGHT EMITTING ELEMENT  
A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a...
US20060215719 High Power Diode Lasers  
The invention relates to ridge waveguide semiconductor diode lasers that include a substrate, a first cladding layer near the substrate, a second cladding layer near the first cladding layer, and...
US20060209914 Semiconductor device and manufacturing method thereof  
In order to reduce the parasitic capacitance of the device and obtain an enhanced high-speed response characteristic while assuring the reliability of the device, a semiconductor device is...
US20100316080 SEMICONDUCTOR OPTICAL ELEMENT  
A semiconductor optical element includes a p-type InP substrate doped with Zn; and a diffusion blocking layer doped with Ru, a p-type InP cladding layer, an active layer, and an n-type InP...
US20060045157 Semiconductor laser with expanded mode  
Systems and methods for expanding an optical mode of a laser or optical amplifier to reduce leakage current. A waveguide layer is included in a laser that optically couples with the active region....
US20110249696 Laser diode  
There is provided a laser diode capable of setting a mesa diameter small without use of a method which loses reliability of a device, and is not easily controlled. The laser diode includes: a...
US20110150500 VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS  
A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure...
US20090097521 Side Surface Light Emitting Semiconductor Element And Method Of Manufacturing The Same  
A side surface light emitting semiconductor element includes: an AlGaN layer doped with Mg at a concentration equal to or less than 5×1019 cm−3; a ridge having a striped shape and formed in an...

Matches 1 - 50 out of 71 1 2 >