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US20050008055 |
Facet passivation for edge emitting semiconductor lasers
A continuous monolithic QW layer of an edge-emitting semiconductor laser includes a passivated window section adjacent each facet and an active section between the two window sections. The... |
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US20060126688 |
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers... |
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US20100322275 |
WHITE LIGHT-EMITTING LAMP AND ILLUMINATING DEVICE USING THE SAME
A white light-emitting lamp (1) includes a light-emitting portion (9) which is excited by light emitted from a semiconductor light-emitting element (2) to emit white light. The light-emitting... |
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US20100132789 |
PHOSPHOR, WHITE LIGHT ILLUMIANTION DEVICE AND SOLAR CELL UTILIZING THE SAME
The invention provides phosphors composed of Eu(1-x)MaxMg(1-y)MbyAl(10-z)MczO17, wherein Ma is Yb, SN, Pb, Ce, Tb, Dy, Pr, Ca, Sr, Ba, or combinations thereof, and 0≦x≦0.9; Mb is Mn, Zn, or... |
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US20070064755 |
External cavity type semiconductor laser
An external cavity type semiconductor laser that has a larger output and a more excellent single mode characteristic than a conventional external cavity type semiconductor laser is provided. The... |
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US20070002913 |
Structure of laser
A structure of laser is disclosed. The laser structure comprises: a plurality of pins, one of which having a large area connection part on the top, wherein the connection part has two outwardly... |
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US20100080000 |
LASER DIODE DEVICE AND DISPLAY APPARATUS
A laser diode device includes a red laser diode element, a green laser diode element and a blue laser diode element. The red, green and blue laser diode elements are arranged in a single package... |
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US20100080254 |
TEMPERATURE TUNING OF OPTICAL DISTORTIONS
The systems and methods herein provide for tuning an optical characteristic of a gain medium for a laser system. For example, a system may include a thermal tuner that dynamically controls the... |
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US20110142088 |
PHOTON PAIR SOURCE AND METHOD FOR ITS PRODUCTION
The invention relates to a method for the production of a photon pair source, which generates entangled photon pairs, having at least one quantum dot, wherein in the method the operational... |
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US20050063436 |
Semiconductor laser module, method of controlling a semiconductor laser beam and video display apparatus
A semiconductor laser module comprising a semiconductor laser device, a collimating section collimating a laser beam emitted from the semiconductor laser device, a beam shaping section... |
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US20050157769 |
Nitride semiconductor laser device
Provided is a semiconductor laser device that is free from or suffers less from deterioration resulting from a surge or that is less likely to suffer from deterioration resulting from a surge. The... |
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US20090311528 |
METHOD FOR PASIVATING NON-RADIATIVE RECOMBINATION CENTRES OF ZnO SPECIMENS AND PASSIVE ZnO SPECIMENS THUS PREPARED
Method for passivating non-radiatives recombination centres of a ZnO specimen in which magnesium is deposited on at least one surface of the ZnO specimen, and annealing of the specimen on which... |
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US20150071319 |
EMISSION SOURCE AND METHOD OF FORMING THE SAME
In various embodiments, an emission source may be provided. The emission source may also include a gain medium including a halide semiconductor material. The emission source may further include a... |
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US20090219966 |
LASER DIODE WITH IMPROVED HEAT DISSIPATION
A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat... |
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US20110038031 |
PULSED FIBER-MOPA WITH WIDELY-VARIABLE PULSE-DURATION
Master oscillator power amplifier (MOPA) apparatus includes two seed-pulse sources coupled to a single fiber amplifier including one or more stages of amplification. One of the seed-pulse sources... |
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US20130015850 |
Die-Sized Atomic Magnetometer and Method of Forming the Magnetometer
The cost and size of an atomic magnetometer are reduced by attaching together a first die which integrates together a vapor cell, top and side photo detectors, and processing electronics, a second... |
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US20080084905 |
HIGH POWER DIODE LASER HAVING MULTIPLE EMITTERS AND METHOD FOR ITS PRODUCTION
The invention discloses a high power laser diode comprising a plurality of laser light emitters (2) and a plurality of light collimating means (33), wherein each of the laser light emitters (2)... |
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US20070091944 |
Widely tunable RF source
A detector is optically coupled to a first and a second semiconductor laser, wherein the detector to output two or more beat frequencies generated by mixing optical outputs of the first and second... |
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US20060187985 |
High reliability etched-facet photonic devices
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to... |
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US20140056323 |
OPTICAL DEVICE
Provided is an optical device capable of bonding each optical part to a substrate with the same applied load by surface activated bonding even if the planar shape sizes of a plurality of optical... |
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US20070081569 |
Photonic quantum ring laser for low power consumption display device
A three-dimensional (3D) photonic quantum ring (PQR) laser for a low power consumption display, wherein the PQR laser has a sufficient small radius to adjust an inter-mode spacing (IMS) of... |
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US20070053397 |
Angled faceted emitter
A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the... |
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US20070133635 |
Dual light source and laser projection display apparatus using same
Disclosed is a laser projection display apparatus. The laser projection display apparatus includes a green light source for generating green light having a predetermined wavelength, and a dual... |
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US20090161711 |
Nitride semiconductor laser diode
A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Alx1Iny1Ga1-x1-y1N (x1≧0.5, y1≧0 and 1−x1−y1≦0.5) in a group III nitride semiconductor multilayer... |
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US20050018719 |
Tuneable laser with improved suppression of auger recombination
A junction region for the laser diode may be improved to give an increased wavelength tuning range with improved thermal stability. The region has a homojunction structure that modifies the band... |
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US20100003035 |
LASER DIODE HAVING AN ABRUPT TURN-ON, OPTICAL TRANSMITTER DEVICE USING THE SAME LASER DIODE AND OPTICAL COMMUNICATION APPARATUS
Provided are a laser diode which has low power consumption and can realize a high on/off extinction ratio by small variation of current and which can modulate optical signals at high speed, an... |
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US20090310637 |
SURFACE EMITTING LASER ELEMENT AND METHOD OF FABRICATING THE SAME
A convex-portion forming layer is formed between a current-confinement aperture and a multilayer mirror, and forms a convex portion on each boundary between layers forming the multilayer mirror.... |
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US20090122822 |
Semiconductor device having trench extending perpendicularly to cleaved plane and manufacturing method of the same
A method for manufacturing a semiconductor device includes setting cut lines in parallel to a normal direction of a (1-100) plane orthogonal to the principal plane and in parallel to a normal... |
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US20060153262 |
Terahertz quantum cascade laser
A laser comprising: a substrate comprising a bulk region and a conducting layer; an active region (11) comprising a quantum cascade structure provided on a first surface of the substrate (12) such... |
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US20050030995 |
GaN laser element
In a GaN-based laser device (100) having a GaN-based semiconductor stacked-layered structure including a light emitting layer (106), the semiconductor stacked-layered structure includes a ridge... |
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US20090022191 |
METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LASER ELEMENT AND A NITRIDE SEMICONDUCTOR LASER ELEMENT
A method for manufacturing a nitride semiconductor laser element, which has over a substrate a laminate including an element region constituting a cavity, an island layer separated from the... |
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US20120314725 |
OPTICAL DEVICE, MODULATOR MODULE, AND METHOD FOR MANUFACTURING THE OPTICAL DEVICE
An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts... |
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US20080151946 |
Monolithic Solid State Laser Apparatus
There is provided a solid-state laser apparatus, including a solid-state active element (4) having major surfaces and first and second edges (10,12) oppositely disposed to each other, the first... |
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US20060285565 |
Structure of laser and method of manufacturing the same
A structure of laser and manufacture methods thereof are disclosed. The method comprises the steps of: 1. coupling a plurality of photo diodes with first pins of a plurality of pin groups on a... |
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US20060029114 |
Semiconductor laser device
Provided is a semiconductor laser device having an economical structure in which the replacement of a semiconductor laser module is easy and in which the occurrence of dew condensation can be... |
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US20050058166 |
Metal waveguides for mode confinement in terahertz lasers and amplifiers
The present invention provides in one aspect a double-sided metal waveguide that can be utilized in a terahertz laser or amplifier operating in a range of about 1 THz to about 10 THz for mode... |
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US20100046569 |
SILICON-BASED LENS SUPPORT STRUCTURE FOR DIODE LASER
An apparatus that includes a first diode laser and a silicon-based support structure is provided. The first diode laser is configured to emit a first laser beam when powered. The support structure... |
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US20140301418 |
PHOTONIC CRYSTAL CAVITIES AND RELATED DEVICES AND METHODS
Photonic crystal cavities and related devices and methods are described. The described cavities can be used as lasers, photovoltaic sources, and single photon sources. The cavities can be both... |
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US20060120421 |
Semiconductor laser and manufacturing method thereof
In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation... |
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US20080049805 |
BURIED TYPE SEMICONDUCTOR LASER
A semiconductor laser includes a p-type InP substrate and a ridge section of a p type InP first cladding layer, an AlGaInAs strained quantum well active layer and a n type InP second cladding... |
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US20070195841 |
CHARGE NEUTRALIZATION IN SEMICONDUCTOR STRUCTURES
A method for neutralizing trapped charges in a buried oxide layer. The method includes providing a semiconductor structure which includes (a) a semiconductor layer, (b) a charge accumulation layer... |
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US20100067556 |
DIODE LASER BARS AND METHOD FOR THE PRODUCTION THEREOF
There is provided a method for the production of diode laser bars from a wafer, wherein a metal layer is applied to the wafer in such a way that it does not extend up to the later facets of the... |
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US20090213887 |
Semiconductor laser and method of manuracture
The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the... |
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US20100064777 |
LEAK DETECTION SYSTEM AND METHOD
A leak detector (1) adapted to detect a leak (40) of a first material by detecting a change in a physical/chemical property of a second material. The leak detector includes a quantum cascade laser... |
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US20060039429 |
Device for bi-directional optical communication and method for fabricating the same
A device for bi-directional optical communication and a method of fabricating the same, whereby a monolithic surface light emitting laser and an optical detector are integrally formed to make a... |
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US20080198885 |
LOW CREEP METALLIZATION FOR OPTOELECTRONIC APPLICATIONS
A metallization on a semiconductor substrate is disclosed in the form of a laminate comprising a plurality of layers of a “conducting” metallization for providing electrical conductivity,... |
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US20090041074 |
Passivation of Vertical Cavity Surface Emitting Lasers
A vertical cavity surface emitting laser including a substrate, a plurality of epitaxial layers formed on the substrate as an epitaxial stack, and a passivation layer at least partly covering the... |
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US20070030866 |
Semiconductor laser having spot-size converter and method of fabricating the same
A semiconductor laser having a spot-size converter (SSC) is provided. The semiconductor laser includes: a substrate; a gain region formed on the substrate to emit laser; an SSC region formed on... |
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US20070008999 |
Broadened waveguide for interband cascade lasers
Interband cascade lasers having high-refractive index semiconductor spacer layers within the active regions are disclosed. Together with spacer layers which may be provided outside the active... |
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US20100032008 |
ZINC OXIDE MULTI-JUNCTION PHOTOVOLTAIC CELLS AND OPTOELECTRONIC DEVICES
Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices... |