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US20100032008 |
ZINC OXIDE MULTI-JUNCTION PHOTOVOLTAIC CELLS AND OPTOELECTRONIC DEVICES
Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices... |
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US20050286581 |
Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device
A semiconductor laser device includes a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion, a... |
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US20060245464 |
Vertical cavity surface emitting laser device
A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the... |
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US20070058686 |
ACTIVE OPTICAL ANTENNA
A new class of photonic devices called active optical antennas, which consist of metallic structures directly integrated on to the facet of a semiconductor lasers, and of instruments based on such... |
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US20090114274 |
CRYSTALLINE THIN-FILM PHOTOVOLTAIC STRUCTURES
Semiconductor structures include a substantially untextured substrate layer, a textured buffer layer disposed over the substrate layer, and a semiconductor layer disposed over the textured buffer... |
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US20120033695 |
SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS
This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces... |
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US20090126922 |
Heat transfer device
The invention is for an apparatus and method for removal of waste heat from heat-generating components including high-power solid-state analog electronics such as being developed for... |
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US20130243021 |
EPITAXIAL STRUCTURES ON SIDES OF A SUBSTRATE
A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping... |
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US20050117623 |
Optoelectronic device incorporating an interference filter
A novel class of optoelectronic devices incorporate an interference filter. The filter includes at least two optical cavities. Each of the cavities localizes al least one optical mode. The optical... |
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US20050040410 |
Tilted cavity semiconductor optoelectronic device and method of making same
A novel class of semiconductor light-emitting devices, or “tilted cavity light-emitting devices” is disclosed. The device includes at least one active element, generally placed within a cavity,... |
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US20050008060 |
Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in... |
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US20070064758 |
Laser diode and laser diode device
A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an... |
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US20080251801 |
METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR, SCHOTTKY BARRIER DIODE, LIGHT EMITTING DIODE, LASER DIODE, AND METHODS OF FABRICATING THE DIODES
There are provided a method of producing a group III-V compound semiconductor, a Schottky barrier diode, a light emitting diode, a laser diode and methods of fabricating the diodes, that can... |
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US20120183006 |
OPTICAL DEVICE, LASER BEAM SOURCE, LASER APPARATUS AND METHOD OF PRODUCING OPTICAL DEVICE
After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed,... |
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US20100110198 |
MID INFRARED OPTICAL ILLUMINATOR ASSEMBLY
An optical illuminator assembly (10) for locating an object (20) in inclement conditions (22) includes a MIR laser source (12) having a semiconductor laser that directly emits (without frequency... |
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US20060062269 |
Semiconductor laser module, spatial optical transmission system and electronic appliance
A highly sensitive and inexpensive spatial optical transmission system using an LD (Laser Diode) as a light source and making use of the characteristics of a light receiving element is provided.... |
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US20110280266 |
SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS
This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a base portion mounted with the semiconductor laser chip,... |
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US20100109017 |
GaN-BASED COMPOUND SEMICONDUCTOR DEVICE
A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound... |
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US20050026319 |
Semiconductor laser device, optical pickup using the same, and apparatus and method for manufacturing the same
The present invention relates to an optical pickup used for an optical recording information instrument such as CD-ROM, CD-R, MO, DVD and the like, and a semiconductor laser device assembled to be... |
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US20100177797 |
Apparatus and Method for Laser Processing a Material
Apparatus for laser processing a material (8) with optical radiation (T), which apparatus comprises a seed laser (1) pumped by a seed pump (2), an amplifier (3) pumped by an amplifier pump (4), a... |
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US20070195846 |
Semiconductor laser and process for manufacturing the same
This specification relates to a semiconductor laser in which an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) are stacked in this order on a... |
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US20070098030 |
Nitride semiconductor laser device and method of manufacturing the same
A semiconductor laser device is provided. The semiconductor laser device includes a substrate, and an n-material layer, an n-clad layer, an n-light waveguide layer, an active region, a nitride... |
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US20060093000 |
Multiple-wavelength laser diode and method of fabricating the same
A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are bonded onto a plate and aligned such that... |
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US20060203870 |
Modulator integrated semiconductor laser device
A modulator integrated semiconductor laser device is provided. In the modulator integrated semiconductor laser device, a lower DBR (distributed Bragg reflector) layer is formed on the substrate,... |
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US20050030993 |
Near field optical apparatus
A near field optical apparatus comprising a conductive sheet or plane having an aperture therein with the conductive plane including at least one protrusion which extends into the aperture. The... |
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US20100000485 |
IGNITION DEVICE FOR AN INTERNAL COMBUSTION ENGINE
An ignition device for an internal combustion engine includes at least one pump light source which supplies a pump light. In addition, a laser device is provided which generates a laser pulse for... |
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US20100080000 |
LASER DIODE DEVICE AND DISPLAY APPARATUS
A laser diode device includes a red laser diode element, a green laser diode element and a blue laser diode element. The red, green and blue laser diode elements are arranged in a single package... |
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US20070183469 |
Nitride based semiconductor laser diode
A nitride based semiconductor laser diode is provided. The nitride based semiconductor laser diode includes: a lower contact layer, a lower clad layer, an active layer, and an upper clad layer... |
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US20050276297 |
Optical pickup and optical disk apparatus
An optical pickup includes a laser light source configured to emit laser light, an objective lens configured to focus the laser light emitted from the laser light onto an optical disk, and an... |
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US20050152420 |
Semiconductor device having quantum well structure including dual barrier layers, semiconductor laser employing the semiconductor device, and methods of manufacturing the semiconductor device and the semiconductor laser
A semiconductor device having a GaInNAs quantum well structure including a plurality of barrier layers, in which the emission wavelength of the device can be controlled by varying the thicknesses... |
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US20070091955 |
SEMICONDUCTOR LASER DEVICE AND OPTICAL PICKUP APPARATUS USING THE SAME
A semiconductor laser device is provided, in which an optical axis of a far-field pattern (FFP) is stabilized and which is capable of oscillating in a fundamental transverse mode up to a high... |
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US20060023762 |
Surface-emitting type device and method for manufacturing the same
To prevent electrostatic breakdown and improve reliability concerning surface-emitting type devices and methods for manufacturing the same. A surface-emitting type device includes a substrate 10,... |
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US20110261847 |
LIGHT EMITTING DEVICES
A light emitting device includes a number of light emitting chips, a substrate to support the light emitting chips, a patterned first conductive layer over the substrate to facilitate radiation... |
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US20100172383 |
Multivariable control system with state feedback
A system and method for controlling the output of a semiconductor laser is presented. The system and method includes using non-linear equations to calculate a state space model of the laser around... |
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US20050201438 |
Method for making a high power semiconductor laser diode
Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication... |
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US20100034231 |
SEMICONDUCTOR LASER
A semiconductor laser, which emits a laser beam from an edge surface of an active layer (5), is provided with a protective film (20), arranged on the edge surface from which the laser beam is... |
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US20070008999 |
Broadened waveguide for interband cascade lasers
Interband cascade lasers having high-refractive index semiconductor spacer layers within the active regions are disclosed. Together with spacer layers which may be provided outside the active... |
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US20090256165 |
METHOD OF GROWING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING MOLECULAR BEAM EPITAXY
A method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region is provided. The method includes growing the active region using a combination of (i)... |
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US20120033696 |
SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS
This semiconductor laser apparatus includes a package having sealed space inside and a semiconductor laser chip arranged in the sealed space. The package has a first member and a second member... |
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US20090122822 |
Semiconductor device having trench extending perpendicularly to cleaved plane and manufacturing method of the same
A method for manufacturing a semiconductor device includes setting cut lines in parallel to a normal direction of a (1-100) plane orthogonal to the principal plane and in parallel to a normal... |
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US20070165686 |
Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method
An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP... |
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US20050265415 |
Laser diode and method of manufacture
VCSEL diode comprises a bottom electrode (10), conducting substrate material (11), a bottom mirror (12) formed by a multilayer distributed Bragg reflector (DBR) of certain conductivity and... |
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US20060062267 |
Semiconductor laser array and manufacturing method for semiconductor laser array
A semiconductor laser array includes a substrate and a first laser element provided on the substrate for emitting a first wavelength laser. The first laser element has a first multi-layer... |
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US20050094694 |
Semiconductor laser device and optical pick-up apparatus using semiconductor laser device
An object of the present invention is to provide a semiconductor laser device that has a simple structure that can easily be constructed, and can dissipate heat easily, and can improve its... |
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US20060176921 |
Semiconductor laser device
To provide a semiconductor laser device for which a horizontal divergence angle of a laser beam can be improved independently of optimization of other properties such as a cladding layer thickness... |
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US20060056473 |
Semiconductor light emitting element and method for fabricating the same
A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a... |
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US20070110113 |
Semiconductor laser diode and semiconductor laser diode assembly containing the same
Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser... |
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US20050201439 |
Semiconductor light emitting device and semiconductor light emitting device module
A semiconductor light emitting device capable of easy optical coupling to an optical fiber, etc. and excellent in high power operation characteristics is disclosed. The semiconductor light... |
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US20050152417 |
Light emitting device with an omnidirectional photonic crystal
A light emitting device includes a light emitting diode and an omnidirectional photonic crystal formed on one of an upper outer surface and a lower outer surface of the light emitting diode and... |
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US20050031007 |
Semiconductor light emitting element
Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The... |