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US20080084747 REDUCING PROGRAM DISTURB IN NON-VOLATILE STORAGE  
A non-volatile semiconductor storage system is programmed in a manner that reduces program disturb by applying a higher boosting voltage on one or more word lines that are connected non-volatile...
US20110199837 High Voltage Word Line Driver  
A word line driver circuit coupled to a memory circuit word line includes pull-up, pull-up clamp, pull-down and pull-down clamp transistors, each having a source, a drain and a gate. For the...
US20140169106 NEGATIVE BITLINE WRITE ASSIST CIRCUIT AND METHOD FOR OPERATING THE SAME  
A negative bitline write assist circuit includes a bias capacitor configured to facilitate driving the capacitance of a bitline. The negative bitline write assist circuit may be modularly...
US20110069563 VOLTAGE SHIFTER FOR HIGH VOLTAGE OPERATIONS  
A voltage shifter has a supply line receiving a supply voltage that varies between a first operating value in a first operating condition and a second high operating value, in a second operating...
US20140078815 VOLTAGE RAIL NOISE SENSING CIRCUIT AND METHOD  
Apparatus and methods level shift a direct current (DC) component of a voltage rail signal from a first DC level to a second DC level such that voltage rail noise can be determined. The actual...
US20110255351 Level Shifter with Embedded Logic and Low Minimum Voltage  
In one embodiment, a level shifter circuit may include a shift stage that also embeds transistors that implement a logic operation on two or more inputs to the level shifter. At least one of the...
US20110273940 LEVEL SHIFTING CIRCUIT  
A level shifting circuit having an input and an output where the level shifting circuit is configured to receive a logical high level having a first voltage level at the input and to output a...
US20110026335 POWER-UP SIGNAL GENERATION CIRCUIT  
A power-up signal generation circuit includes a fixed level transition voltage generation unit, a variable level transition voltage generation unit, a comparison unit, and a selective output unit....
US20120014192 Two stage voltage level shifting  
A voltage level shifter for shifting an output signal from a first voltage level to a second voltage level and then to a further boosted second voltage level is disclosed. The voltage level...
US20140211574 VOLTAGE DIVIDER CONTROL CIRCUIT  
One or more techniques or systems for controlling a voltage divider are provided herein. In some embodiments, a control circuit is configured to bias a pull up unit of a voltage divider using an...
US20110249518 Circuits, Systems, and Methods for Dynamic Voltage Level Shifting  
Dynamic voltage level shifting circuits, systems and methods are disclosed. A level shifting circuit comprises an input for accepting a first discrete voltage level to be shifted, a level shifting...
US20080291717 SEMICONDUCTOR STORAGE DEVICE INCORPORATED INTO A SYSTEM LSI WITH FINER DESIGN RULES  
In the present invention, a row decoder circuit is made up of a transistor having a first gate oxide film thickness, a transistor having a second gate oxide film thickness, and a transistor having...
US20140140147 STATIC RANDOM ACCESS MEMORY CIRCUIT WITH STEP REGULATOR  
Implementations of the present disclosure involve a circuit and/or method for providing a static random access memory (SRAM) component of a very large scale integration (VLSI) design, such as a...
US20120257463 DRIVER CIRCUIT  
A driver circuit includes pull-up and pull-down drivers driven by separate pre-drivers operating between different voltage rails. Data signals driving the pull-up driver and the pull-down driver...
US20150162058 TECHNIQUES TO BOOST WORD-LINE VOLTAGE USING PARASITIC CAPACITANCES  
A memory device with word-line voltage boosting includes a set of first switches that are operable to couple a word-line of the memory device to a supply voltage to pull the word-line up to a rail...
US20100165752 LEVEL SHIFTER  
A level shifter circuit includes first and second supply inputs for receiving a first supply voltage and a second supply voltage, respectively. The level shifter circuit further comprises a...
US20150103607 DRIVER CIRCUIT  
A method of operation in a memory controller includes operating pull-up and pull-down drivers driven by separate pre-drivers between different voltage rails. Data signals driving the pull-up...
US20120294095 Dynamic Level Shifter  
A dynamic level shifter is disclosed. In one embodiment, a dynamic level shifter circuit may receive an input signal referenced to a first voltage of a first power domain, and may output a...
US20140078817 INTEGRATED CIRCUITS WITH SRAM CELLS HAVING ADDITIONAL READ STACKS AND METHODS FOR THEIR FABRICATION  
Integrated circuits that include SRAM cells having additional read stacks and methods for their fabrication are provided. In accordance with one embodiment a method for fabricating such an...
US20140293715 SIGNAL MARGIN CENTERING FOR SINGLE-ENDED eDRAM SENSE AMPLIFIER  
Apparatus and methods for signal margin centering for single-ended eDRAM sense amplifier. A plurality of DRAM cells is connected to an input side of a multiplexer by a first bitline. A...
US20150078105 MODE CHANGING CIRCUITRY  
A circuit includes a PMOS transistor, an NMOS transistor, and a logic level generation section comprising an input and a logic level output. The PMOS gate receives an input voltage having a...
US20120134219 MODE CHANGING CIRCUITRY  
A circuit includes a memory cell having a ground reference node, a switch coupled to the ground reference node, and a mode changing circuit having an output coupled to the switch. The mode...
US20140307502 Far End Resistance Tracking Design with Near End Pre-Charge Control for Faster Recovery Time  
A wordline tracking circuit and corresponding method are disclosed, and include a tracking wordline having an impedance characteristic associated therewith that models a row of memory cells in a...
US20130329505 Far End Resistance Tracking Design with Near End Pre-Charge Control for Faster Recovery Time  
A wordline tracking circuit and corresponding method are disclosed, and include a tracking wordline having an impedance characteristic associated therewith that models a row of memory cells in a...
US20100085816 Flag signal generation circuit and semiconductor memory device  
There is provided a flag signal generation circuit. The flag signal generation circuit includes a status register read (SRR) signal generating unit receiving an idle signal and an SRR command to...
US20090080234 SEMICONDUCTOR DEVICE AND DRAM CONTROLLER  
According to a semiconductor device of the present invention, a differential potential between a sense amplification level and a precharge level of a sense amplifier is set to a power supply...
US20100259999 KEEPERS, INTEGRATED CIRCUITS, AND SYSTEMS THEREOF  
A keeper of an integrated circuit includes a first transistor having a first gate being coupled with an output end of an inverter. A second transistor is coupled with the first transistor in...
US20140078838 INTERFACING BETWEEN INTEGRATED CIRCUITS WITH ASYMMETRIC VOLTAGE SWING  
Embodiments of the invention are generally directed to interfacing between integrated circuits with asymmetric voltage swing. An embodiment of an apparatus includes a first integrated circuit...
US20120134221 WORD-LINE LEVEL SHIFT CIRCUIT  
A dual word-line level shifter circuit and associated SRAM. A circuit is disclosed that includes a first transistor gated by a data input at the lower voltage, and a second transistor gated by a...
US20110085390 WORD-LINE LEVEL SHIFT CIRCUIT  
A dual word-line level shifter circuit and associated SRAM. A circuit is disclosed that includes a first transistor gated by a data input at the lower voltage, and a second transistor gated by a...
US20090003090 Impedance adjusting circuit and semiconductor memory device having the same  
An impedance adjusting circuit includes: a calibration circuit configured to generate a first calibration code and a second calibration code for determining termination resistance; a transmission...
US20140362639 Integrated Circuit With Separate Supply Voltage For Memory That Is Different From Logic Circuit Supply Voltage  
In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a...
US20130016575 Integrated Circuit with Separate Supply Voltage for Memory That is Different from Logic Circuit Supply Voltage  
In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a...
US20110235442 Integrated Circuit with Separate Supply Voltage for Memory That is Different from Logic Circuit Supply Voltage  
In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a...
US20100085819 Burst length control circuit and semiconductor memory device using the same  
A burst length control circuit capable of performing read and write operations in high speed according to a burst length and a semiconductor memory device using the same includes a clock signal...
US20140204683 MARGIN FREE PVT TOLERANT FAST SELF-TIMED SENSE AMPLIFIER RESET CIRCUIT  
In described embodiments, a circuit for providing a margin free PVT tolerant fast self-timed sense amplifier reset includes a sense amplifier coupled between a complementary pair of first and...
US20150092499 SLEW RATE MODULATION  
Apparatus and methods may operate so that arrival times of a data signal at gates of transistors are controlled to switch the transistors at different times to modulate the slew rate of a signal...
US20080068902 Wordline Booster Design Structure and Method of Operating a Wordline Booster Circuit  
The invention relates to a wordline booster circuit, especially an SRAM-wordline booster circuit, comprising a driving element (20) for shifting a voltage level of a charge storage element (50)...
US20090310411 Row-decoder and source-decoder structures suitable for erase in unit of page, sector and chip of a NOR-type flash operating below +/- 10V BVDS  
An apparatus and method for operating an array of NOR connected flash nonvolatile memory cells erases the array in increments of a page, block, sector, or the entire array while minimizing...
US20140092695 HEADER CIRCUIT FOR CONTROLLING SUPPLY VOLTAGE OF A CELL  
One or more techniques or systems for controlling a supply voltage of a cell are provided herein. Additionally, one or more techniques or systems for mitigating leakage of the cell are provided....
US20110134707 BLOCK ISOLATION CONTROL CIRCUIT  
A block isolation control circuit includes: a control signal generation unit configured to generate a control signal which is disabled when a defect occurs in a cell block and it is necessary to...
US20130070542 Replica Circuit and It's Applications  
A replica circuit includes: a first conductivity type first transistor; a first current path including a first conductivity type second transistor and a second conductivity type third transistor;...
US20100014348 Circuit, System, and Method for Programming a Floating Gate  
The invention provides circuits, systems, and methods for programming a floating gate. A floating gate tunneling device is used with an analog comparing device in a circuit having a floating...
US20110188326 DUAL RAIL STATIC RANDOM ACCESS MEMORY  
A static random access memory (SRAM) macro includes a first power supply voltage and a second power supply voltage that is different from the first power supply voltage. A precharge control is...
US20140328112 MEMORY CELL SUPPLY VOLTAGE REDUCTION PRIOR TO WRITE CYCLE  
An integrated circuit device includes a memory cell coupled to a supply voltage line to receive a supply voltage and a voltage control circuit operable to reduce a magnitude of the supply voltage...
US20150003174 FINFET-BASED BOOSTING SUPPLY VOLTAGE CIRCUIT AND METHOD  
A memory circuit includes a voltage boosting circuit for generating a voltage that exceeds a voltage supply of the voltage boosting circuit. The voltage boosting circuit includes a first...
US20150003173 FINFET-BASED BOOSTING SUPPLY VOLTAGE CIRCUIT AND METHOD  
A memory circuit includes a voltage boosting circuit for generating a voltage that exceeds a voltage supply of the voltage boosting circuit. The voltage boosting circuit includes a first...
US20150261249 CLOCK PULSE GENERATOR FOR MULTI-PHASE SIGNALING  
A clock generator is provided that is immune to skew between bits in digital words generated by a multi-phase receiver.
US20100061164 FAIL-SAFE HIGH SPEED LEVEL SHIFTER FOR WIDE SUPPLY VOLTAGE RANGE  
The present invention discloses a fail-safe level shifter switching with high speed and operational for a wide range of voltage supply. The level shifter includes a cascode module, and one or more...
US20090067264 SEMICONDUCTOR MEMORY DEVICE WITH NORMAL AND OVER-DRIVE OPERATIONS  
A semiconductor memory device having a driver configured to sequentially perform over-driving and normal driving operations is presented. The semiconductor memory device includes a driver that...
Matches 1 - 50 out of 310 1 2 3 4 5 6 7 >