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US20120087183 METHODS OF OPERATING PRAMS USING INITIAL PROGRAMMED RESISTANCES AND PRAMS USING THE SAME  
A method of operating a PRAM device can be provided by reading a PRAM reference cell to determine an initial programmed resistance of the PRAM reference cell and determining whether the initial...
US20140254258 REFERENCE VOLTAGE GENERATORS AND SENSING CIRCUITS  
Described examples include sensing circuits and reference voltage generators for providing a reference voltage to a sensing circuit. The sensing circuits may sense a state of a memory cell, which...
US20130028014 REFERENCE VOLTAGE GENERATORS AND SENSING CIRCUITS  
Described examples include sensing circuits and reference voltage generators for providing a reference voltage to a sensing circuit. The sensing circuits may sense a state of a memory cell, which...
US20110141799 REVERSING A POTENTIAL POLARITY FOR READING PHASE-CHANGE CELLS TO SHORTEN A RECOVERY DELAY AFTER PROGRAMMING  
A potential supplied to selected cells in a Phase Change Memory (PCM) is reversed in polarity following a program operation to suppress a recovery time and provide device stabilization for a read...
US20090303807 Semiconductor device and semiconductor system having the same  
A semiconductor device according to example embodiments may be configured so that, when a read command for performing a read operation is input while a write operation is performed, and when a...
US20130155767 APPARATUSES AND METHODS FOR SENSING A PHASE-CHANGE TEST CELL AND DETERMINING CHANGES TO THE TEST CELL RESISTANCE DUE TO THERMAL EXPOSURE  
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other...
US20110242884 Programming at Least One Multi-Level Phase Change Memory Cell  
A method of applying at least one programming pulse to the a PCM cell for programming the PCM cell to have a respective definite cell state, the definite cell state being defined by a definite...
US20070002619 BISTABLE MULTIVIBRATOR WITH NON-VOLATILE STATE STORAGE  
The non-volatile memory cell has a volatile memory means for storing an item of binary information. Furthermore, the memory cell comprises only a single programmable resistance element for...
US20120044744 PROGRAMMABLY REVERSIBLE RESISTIVE DEVICE CELLS USING POLYSILICON DIODES  
Polysilicon diodes fabricated in standard CMOS logic processes can be used as program selectors for reversible resistive devices such as PCRAM, RRAM, CBRAM, or other memory cells. The reversible...
US20090052230 INTEGRATED CIRCUIT INCLUDING SILICIDE REGION TO INHIBIT PARASITIC CURRENTS  
An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first...
US20090180313 Chalcogenide anti-fuse  
An ovonic threshold switch may be used to form an anti-fuse. As manufactured, the fuse may be in its amorphous state, as is conventional for ovonic threshold switches. However, when exposed to a...
US20130308378 ELECTRIC ELEMENT  
A temperature dependent electric element includes a phase change portion including at least one conductive phase change material having a predetermined phase transition temperature, a detector...
US20090080243 DEVICE CONTROLLING PHASE CHANGE STORAGE ELEMENT AND METHOD THEREOF  
Devices controlling a phase change storage element and methods for increasing reliability of a phase change storage element. The invention introduces a first operation mode and a second operation...
US20130107619 CONDITIONING PHASE CHANGE MEMORY CELLS  
A method for conditioning at least one Phase Change Memory, PCM, cell. The PCM cell is characterized by a number of pre-defined characteristics or properties. For pre-conditioning, at least one...
US20130135924 PROGRAMMING OF PHASE-CHANGE MEMORY CELLS  
Methods and apparatus are provided for programming a phase-change memory cell having s>2 programmable cell states. At least one control signal is applied to produce a programming pulse for...
US20130021845 PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL  
A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell...
US20070279974 Forming heaters for phase change memories with select devices  
Rather than depositing a heater material into a pore, a heater material may be first blanket deposited over a select device. The heater material may then be covered by a mask, such that the mask...
US20080298120 Peripheral Devices Using Phase-Change Memory  
Peripheral devices store data in non-volatile phase-change memory (PCM). PCM cells have alloy resistors with high-resistance amorphous states and low-resistance crystalline states. The peripheral...
US20130083594 MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY  
A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined...
US20130077394 MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY  
A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined...
US20110051508 MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY  
A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined...
US20080112217 Read window in chalcogenide semiconductor memories  
Using a shorter read pulse width may increase read window in some embodiments. This may allow the use of higher voltages with less likelihood of a read disturb where a bit unintentionally changes...
US20140153326 CELL SENSING CIRCUIT FOR PHASE CHANGE MEMORY AND METHODS THEREOF  
A cell sensing circuit for a phase changing memory and methods thereof are provided. A specific one of the proposed methods includes: providing a sensing circuit having a sense amplifier, and two...
US20130322167 PROGRAMMING OF GATED PHASE-CHANGE MEMORY CELLS  
A method for programming gated phase-change memory cells, each with a gate, source and drain, having s≧2 programmable cell-states including an amorphous RESET state and at least one crystalline...
US20130322165 PROGRAMMING OF GATED PHASE-CHANGE MEMORY CELLS  
A method for programming gated phase-change memory cells, each with a gate, source and drain, having s≧2 programmable cell-states including an amorphous RESET state and at least one crystalline...
US20090207652 SEMICONDUCTOR DEVICE INCLUDING RESISTANCE STORAGE ELEMENT  
A phase change memory includes a memory cell with a phase change element storing data according to level change of a resistance value in association with phase change, a write circuit converting...
US20070189053 ELECTRICAL FUSE DEVICE BASED ON A PHASE-CHANGE MEMORY ELEMENT AND CORRESPONDING PROGRAMMING METHOD  
A fuse device has a fuse element provided with a first terminal and a second terminal and an electrically breakable region, which is arranged between the first terminal and the second terminal and...
US20130044540 PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL  
An apparatus for programming at least one multi-level Phase Change Memory (PCM) cell having a first terminal and a second terminal A programmable control device controls the PCM cell to have a...
US20140078822 METHODS AND APPARATUSES HAVING A VOLTAGE GENERATOR WITH AN ADJUSTABLE VOLTAGE DROP FOR REPRESENTING A VOLTAGE DROP OF A MEMORY CELL AND/OR A CURRENT MIRROR CIRCUIT AND REPLICA CIRCUIT  
Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit...
US20060034116 Cross point array cell with series connected semiconductor diode and phase change storage media  
A storage cell that may be a memory cell, and an integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell includes a series connected...
US20090244964 Reducing temporal changes in phase change memories  
A phase change memory in the reset state may be heated to reduce or eliminate electrical drift.
US20100027328 Multilevel Variable Resistance Memory Cell Utilizing Crystalline Programming States  
A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the...
US20130163321 DRIFT MITIGATION FOR MULTI-BITS PHASE CHANGE MEMORY  
An RC-based sensing scheme to effectively sense the cell resistance of a programmed Phase Change Material (PCM) memory cell. The sensing scheme ensures the same physical configuration of each cell...
US20140269045 CELL PROGRAMMING VERIFICATION  
Technology for verifying cell programming for a phase change memory array is disclosed. In an example, a method may include sending a reset pulse to a phase change memory cell. The method may...
US20150206581 Immunity of Phase Change Material to Disturb in the Amorphous Phase  
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In...
US20150109857 Immunity of Phase Change Material to Disturb in the Amorphous Phase  
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In...
US20140328121 Immunity of Phase Change Material to Disturb in the Amorphous Phase  
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In...
US20140098604 Immunity of Phase Change Material to Disturb in the Amorphous Phase  
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In...
US20100020594 DEVICE FOR PROGRAMMING A PCM CELL WITH DISCHARGE OF CAPACITANCE AND METHOD FOR PROGRAMMING A PCM CELL  
A device for programming PCM cells includes a pulse-generator circuit for supplying programming current pulses. The pulse-generator circuit includes: at least one first capacitive element; a...
US20110103139 Double-pulse write for phase change memory  
The present invention discloses a method including: writing a phase change material from a high RESET state to a weakened RESET state with a first step; writing the phase change material from the...
US20120044753 PROGRAMMABLY REVERSIBLE RESISTIVE DEVICE CELLS USING CMOS LOGIC PROCESSES  
Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for reversible resistive devices, such as PCM, RRAM, CBRAM, or other memory cells. The reversible...
US20090134910 RECONFIGURABLE LOGIC STRUCTURES  
Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a...
US20110194339 MICROELECTRONIC PROGRAMMABLE DEVICE AND METHODS OF FORMING AND PROGRAMMING THE SAME  
A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of...
US20090257275 Seasoning phase change memories  
A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory.
US20110085372 NON-VOLATILE SRAM CELL THAT INCORPORATES PHASE-CHANGE MEMORY INTO A CMOS PROCESS  
A SRAM cell having two cross-coupled inverters formed by CMOS technology and first and second chalcogenic elements integrated with the SRAM cell to add nonvolatile properties to the storage cell....
US20090303783 Thin film input/output  
Input/Output circuitry employs thin-film switching devices to drive output signals from an integrated circuit to an external device and to receive input signals from an external device. Three...
US20100027321 Non-Volatile Single-Event Upset Tolerant Latch Circuit  
A non-volatile single-event upset (SEU) tolerant latch is disclosed. The non-volatile SEU tolerant latch includes a first and second inverters connected to each other in a cross-coupled manner....
US20090244962 Immunity of phase change material to disturb in the amorphous phase  
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In...
US20050024933 Process for manufacturing device having selector transistors for storage elements and memory device fabricated thereby  
A process for manufacturing a memory device having selector bipolar transistors for storage elements, includes the steps of: in a semiconductor body, forming at least a selector transistor, having...
US20100067288 MEMORY DEVICE STRUCTURES INCLUDING PHASE-CHANGE STORAGE CELLS  
A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends...