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US20120087174 Two Terminal Re Writeable Non Volatile Ion Transport Memory Device  
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic...
US20110242885 THREE-DIMENSIONAL PHASE CHANGE MEMORY  
A memory device includes a stack of semiconductor layers. A circuit is on a layer of the stack of semiconductor layers. A primary memory array is on another layer of the stack of semiconductor...
US20160019960 OPERATION MODES FOR ADJUSTABLE RESISTANCE BIT LINE STRUCTURES  
Methods for reducing leakage currents through unselected memory cells of a memory array during a memory operation are described. In some cases, the leakage currents through the unselected memory...
US20130033929 WRITE SCHEME IN A PHASE CHANGE MEMORY  
In a phase change memory, an input data corresponding to a plurality of memory cells is received and a previous data is read from the plurality of memory cells. The input data is compared with the...
US20100182821 MEMORY DEVICE, MEMORY CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VARIABLE RESISTANCE  
A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage...
US20090303772 Two-Terminal Reversibly Switchable Memory Device  
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic...
US20160217856 METHOD AND CIRCUIT FOR SWITCHING A MEMRISTIVE DEVICE  
A method of switching a memristive device applies a current ramp of a selected polarity to the memristive device. The resistance of the device during the current ramp is monitored. When the...
US20090303773 Multi-terminal reversibly switchable memory device  
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic...
US20060109704 Nonvolatile memory device using resistor having multiple resistance states and method of operating the same  
A nonvolatile memory device and method that uses a resistor having various resistance states. The memory device may include a switching device and a resistor. The resistor may be electrically...
US20140153317 SILICON-BASED NANOSCALE RESISTIVE DEVICE WITH ADJUSTABLE RESISTANCE  
A non-volatile solid state resistive device that includes a first electrode, a p-type poly-silicon second electrode, and a non-crystalline silicon nanostructure electrically connected between the...
US20110261616 WRITE SCHEME IN PHASE CHANGE MEMORY  
A method for writing a phase change memory includes receiving an input data corresponding to a plurality of memory cells, while reading a previous data from the plurality of memory cells and...
US20130121060 NON-VOLATILE MEMORY ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME  
Non-volatile memory elements, memory devices including the same, and methods for operating and manufacturing the same may include a memory layer between a first electrode and a second electrode...
US20100211725 INFORMATION PROCESSING SYSTEM  
An information processing system comprises a main memory operative to store data, and a control circuit operative to access the main memory for data. The main memory includes a nonvolatile...
US20080062740 Methods of programming a resistive memory device  
Methods of programming a RRAM device are provided. An increasing set current is applied to a data storing layer pattern of the RRAM device while measuring a resistance of the data storing layer...
US20160019963 AUTO-TRACKING UNSELECTED WORD LINE VOLTAGE GENERATOR  
Methods for reducing leakage currents through unselected memory cells of a memory array during a memory operation are described. In some cases, the leakage currents through the unselected memory...
US20120257438 CONTEMPORANEOUS MARGIN VERIFICATION AND MEMORY ACCESS FOR MEMORY CELLS IN CROSS POINT MEMORY ARRAYS  
Circuitry for restoring data values in re-writable non-volatile memory is disclosed. An integrated circuit includes a memory access circuit and a sensing circuit configured to sense a data signal...
US20110002157 RESISTANCE CHANGE TYPE MEMORY  
A resistance change type memory includes first, second and third drive lines, a resistance change element having one end connected to the third drive line, a first diode having an anode connected...
US20080158942 MEMORY HAVING STORAGE LOCATIONS WITHIN A COMMON VOLUME OF PHASE CHANGE MATERIAL  
A memory includes a volume of phase change material, a first transistor coupled to the volume of phase change material for accessing a first storage location within the volume of phase change...
US20080055973 Small Electrode for a Chacogenide Switching Device and Method for Fabricating Same  
Semiconductor devices including a memory cell are provided. In one embodiment, the memory cell includes a first conductive material within a pore of a dielectric layer. The first conductive...
US20160322101 Resistive Switching Element and Use Thereof  
A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or...
US20160019957 REDUCING DISTURB WITH ADJUSTABLE RESISTANCE BIT LINE STRUCTURES  
Methods for reducing leakage currents through unselected memory cells of a memory array during a memory operation are described. In some cases, the leakage currents through the unselected memory...
US20110261613 PHASE CHANGE MEMORY ARRAY BLOCKS WITH ALTERNATE SELECTION  
A phase change memory is disclosed. The phase change memory has a plurality of block units. The block units are alternately selected. The alternate block unit selection suppresses peak current...
US20110188292 VARIABLE RESISTANCE MEMORY, OPERATING METHOD AND SYSTEM  
Provided is an operating method of a variable resistance memory device. The operating method applies a set pulse to a plurality of memory cells to be written in a set state, and applies a reset...
US20110149645 MULTI-LEVEL PROGRAMMABLE PCRAM MEMORY  
A series of phase change material layers sandwiched between a bottom electrode and a top electrode may have different phase change temperatures selected to provide a memory device having three or...
US20100315857 RESISTANCE CHANGE MEMORY  
A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell...
US20080123393 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE SAME  
A method of writing into a nonvolatile semiconductor memory device including a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the...
US20070103964 Resistive memory devices including selected reference memory cells and methods of operating the same  
A method of accessing a resistive memory device can include applying a predetermined voltage level to a first word line coupled to a first resistive memory cell block during a read operation of a...
US20140104933 SEMICONDUCTOR MEMORY  
Provided is a semiconductor memory in which it is easier to read a read margin when an ambient temperature changes. The semiconductor memory includes: a memory cell including a first variable...
US20110044092 SEMICONDUCTOR MEMORY DEVICE  
A resistance variable memory reduces the nonuniformity of resistance values after programming, so that a rewrite operation can be performed on a memory cell at high speed. A reference resistor is...
US20080239797 INFORMATION RECORDING/REPRODUCING DEVICE  
There is proposed a nonvolatile information recording/reproducing device with low power consumption and high thermal stability. The information recording/reproducing device according to an aspect...
US20080007988 Non-volatile memory device including variable resistance material and method of fabricating the same  
Provided is a non-volatile memory device including a variable resistance material and method of fabricating the same. The non-volatile memory device may include a lower electrode, an intermediate...
US20060256608 Resistive memory device with improved data retention and reduced power  
Provided herein is method of programming a resistive memory device, the resistive memory device including a first electrode, a second electrode, a passive layer between the first and second...
US20140016397 NONVOLATILE MEMORY DEVICE AND WRITE METHOD THEREOF  
A nonvolatile memory device includes a memory cell array including a plurality of memory cells, and a data comparison write unit connected with the memory cell array and configured to support a...
US20080291715 NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE MATERIALS  
A nonvolatile memory device includes a nonvolatile memory cell, a read circuit and a control bias generating circuit. The nonvolatile memory cell has a resistance level that changes depending on...
US20080121860 Semiconductor memory cell and method of forming same  
A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing...
US20070121369 Resistive memory cell arrangement and a semiconductor memory including the same  
A memory cell arrangement includes a set of word lines and bit lines and at least one chain of series-connected memory elements which is electrically connected to one of the bit lines. The memory...
US20060250836 Rewriteable memory cell comprising a diode and a resistance-switching material  
In a novel rewriteable nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for...
US20140204668 Robust Initialization with Phase Change Memory Cells in Both Configuration and Array  
The present application discloses phase-change memory architectures and methods, in which an additional test is performed, after the normal power-valid signal, to assure that the phase-change...
US20130336052 Processors and Systems With Read Voltage Qualification of Multibit Phase-Change Memory  
Systems in which multi-bit PCM is used, including memory systems, as well as methods for operating such systems. A test of multi-bit PCM memory elements with known states can be used to determine...
US20130336051 MULTIBIT MEMORY WITH READ VOLTAGE QUALIFICATION AT STARTUP  
Systems in which multi-bit PCM is used, including memory systems, as well as methods for operating such systems. A test of multi-bit PCM memory elements with known states can be used to determine...
US20120147660 Preservation Circuit And Methods To Maintain Values Representing Data In One Or More Layers Of Memory  
Circuitry and methods for restoring data in memory are disclosed. The memory may include at least one layer of a non-volatile two-terminal cross-point array that includes a plurality of...
US20100238705 NONVOLATILE MEMORY DEVICE AND METHOD SYSTEM INCLUDING THE SAME  
A nonvolatile memory device performs interleaving of data to be stored in each wordline (memory page), or of data to be stored in multiple wordlines (memory pages). The NVM includes a memory cell...
US20080170428 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE SAME  
The semiconductor memory device includes a resistance memory element 46 including a common electrode 38, a resistance memory layer 42 which is formed on the common electrode 38 and is switched...
US20130223126 RESISTIVE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME  
A resistive memory device includes a memory cell array and control logic. The memory cell array includes multiple memory cells connected to multiple word lines and multiple bit lines. The control...
US20130170281 VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A variable resistance memory device includes a semiconductor substrate having an active area defined by an isolation layer extending in one direction, a gate line extending in another direction...
US20120262981 DATA RETENTION STRUCTURE FOR NON-VOLATILE MEMORY  
A data retention structure in a memory element that stores data as a plurality of conductivity profiles is disclosed. The memory element can be used in a variety of electrical systems and includes...
US20110110150 SEMICONDUCTOR DEVICE  
A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage...
US20110063903 NONVOLATILE MEMORY DEVICES, SYSTEMS HAVING THE SAME, AND WRITE CURRENT CONTROL METHODS THEREOF  
Provided is a nonvolatile memory device, a memory system having the same, and a write current control method thereof. The memory system includes a nonvolatile memory device and a memory...
US20080013363 Operation method of nonvolatile memory device induced by pulse voltage  
A threshold switching operation method of a nonvolatile memory device may be provided. In the threshold switching operation method of a nonvolatile memory a pulse voltage may be supplied to a...
US20160203863 RESISTIVE RANDOM-ACCESS MEMORY AND METHOD FOR CONTROLLING RESISTIVE RANDOM-ACCESS MEMORY  
A resistive random access memory (ReRAM) and a method for controlling the ReRAM are proposed. The method detects a temperature of the ReRAM and set a reference resistance of a sense amplifier of...

Matches 1 - 50 out of 306 1 2 3 4 5 6 7 >