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US20120087183 METHODS OF OPERATING PRAMS USING INITIAL PROGRAMMED RESISTANCES AND PRAMS USING THE SAME  
A method of operating a PRAM device can be provided by reading a PRAM reference cell to determine an initial programmed resistance of the PRAM reference cell and determining whether the initial...
US20110261608 Self-Repairing Memristor and Method  
A self-repairing memristor (300) and methods of operating a memristor (10), (310) and repairing a memristor (10), (310) employ thermal annealing (110). The thermal annealing (110) removes a short...
US20140029327 BIPOLAR RESISTIVE SWITCH HEAT MITIGATION  
A heat mitigated bipolar resistive switch includes a BRS matrix sandwiched between first and second electrodes and a heat mitigator. The BRS matrix is to support bipolar switching of a conduction...
US20130028014 REFERENCE VOLTAGE GENERATORS AND SENSING CIRCUITS  
Described examples include sensing circuits and reference voltage generators for providing a reference voltage to a sensing circuit. The sensing circuits may sense a state of a memory cell, which...
US20110085370 SOFT FORMING REVERSIBLE RESISTIVITY-SWITCHING ELEMENT FOR BIPOLAR SWITCHING  
A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and is...
US20120044748 Sensing Circuit For Programmable Resistive Device Using Diode as Program Selector  
A sensing circuit for programmable resistive device using diode as program selector is disclosed. The sensing circuit can have a reference and a sensing branch. In one embodiment, each branch can...
US20090268508 Reverse leakage reduction and vertical height shrinking of diode with halo doping  
One embodiment of the invention provides a semiconductor diode device including a first conductivity type region, a second conductivity type region, where the second conductivity type is different...
US20150213886 MEMORY SYSTEM  
A memory system according to the embodiment comprises a cell array of plural cells having three or more settable physical quantity levels and operative to store a code composed of symbols...
US20130114328 Low-Complexity Electronic Circuit and Methods of Forming the Same  
An electronic circuit such as a latch or a sequencer includes a plurality of transistors, all of the transistors being either NMOS transistors or PMOS transistors, and dissipates less than or...
US20110141799 REVERSING A POTENTIAL POLARITY FOR READING PHASE-CHANGE CELLS TO SHORTEN A RECOVERY DELAY AFTER PROGRAMMING  
A potential supplied to selected cells in a Phase Change Memory (PCM) is reversed in polarity following a program operation to suppress a recovery time and provide device stabilization for a read...
US20110013445 Bias Temperature Instability-Influenced Storage Cell  
In a method of using a memory cell employing a field effect transistor (FET), the FET is heated to a first temperature sufficient to support bias temperature instability in the FET. The bit line...
US20130163308 METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT, METHOD OF INITIALIZING VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE STORAGE DEVICE  
Programming a variable resistance element includes: a writing step of applying a writing voltage pulse to transition metal oxide comprising two stacked metal oxide layers to decrease resistance of...
US20140307499 BOOSTER CIRCUIT  
A booster circuit configured to boost a supplied voltage and provide a booster circuit output includes: an oscillator circuit configured to generate a clock signal; a charge pump circuit...
US20130343114 PROGRAMMED-STATE DETECTION IN MEMRISTOR STACKS  
A method for programmed-state detection in memristor stacks includes applying a first secondary switching voltage across a memristor stack to produce a first programmed-state-dependent secondary...
US20080272807 Thin film logic device and system  
Thin film logic circuits employ thin-film switching devices to execute complementary logic functions. Such logic devices operate, as complementary metal oxide semiconductor (CMOS) logic devices...
US20150200363 RESISTIVE SWITCHING ELEMENT AND USE THEREOF  
A bipolar resistive switching device (RSM device, FIG. 35) comprises an electrically conductive bottom electrode (BE, FIG. 35); a stack of transition metal oxides layers (RSM, FIG. 35), a number...
US20080234997 Design Structure for Compensating for Variances of a Buried Resistor in an Integrated Circuit  
A design structure comprising elements that when processed in a computer-aided design system generates a machine-executable representation of a circuit that compensates for variances in the...
US20130155767 APPARATUSES AND METHODS FOR SENSING A PHASE-CHANGE TEST CELL AND DETERMINING CHANGES TO THE TEST CELL RESISTANCE DUE TO THERMAL EXPOSURE  
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other...
US20120147657 PROGRAMMING REVERSIBLE RESISTANCE SWITCHING ELEMENTS  
A storage system and method for operating the storage system that uses reversible resistance-switching elements is described. Techniques are disclosed herein for varying programming conditions to...
US20090073742 SEMICONDUCTOR STORAGE DEVICE AND OPERATING METHOD OF THE SAME  
A semiconductor storage device includes: reading blocks; third wirings; reading switches; a control circuit; and evaluating circuits. The reading blocks includes first and second wirings extended...
US20110299322 METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT, METHOD OF INITIALIZING VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE STORAGE DEVICE  
A method of programming a variable resistance element includes: performing a writing step by applying a writing voltage pulse having a first polarity to a transition metal oxide comprising two...
US20090003032 INTEGRATED CIRCUIT INCLUDING RESISTIVITY CHANGING MATERIAL HAVING A PLANARIZED SURFACE  
An integrated circuit includes a first electrode and a first resistivity changing material coupled to the first electrode. The first resistivity changing material has a planarized surface. The...
US20140301130 VERTICAL CROSS POINT RERAM FORMING METHOD  
Methods for forming non-volatile storage elements in a non-volatile storage system are described. In some embodiments, a plurality of forming operations may be performed in which non-volatile...
US20110242884 Programming at Least One Multi-Level Phase Change Memory Cell  
A method of applying at least one programming pulse to the a PCM cell for programming the PCM cell to have a respective definite cell state, the definite cell state being defined by a definite...
US20100073991 STORAGE APPARATUS  
According to one embodiment, a storage apparatus includes: a first inverter; a second inverter; a first storage element having a first state and a second state; and a second storage element having...
US20070008770 STORAGE DEVICES AND SEMICONDUCTOR DEVICES  
The present invention provides a storage device including a storage element, a circuit element, and write control means. The storage element has a characteristic exhibiting a resistance changing...
US20110280059 ALTERNATING BIPOLAR FORMING VOLTAGE FOR RESISTIVITY-SWITCHING ELEMENTS  
A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and may...
US20110080770 METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND NONVOLATILE STORAGE DEVICE  
Applying a writing voltage pulse having a first polarity to a metal oxide layer (3) to change a resistance state of the metal oxide layer (3) from high to low so as to render the resistance state...
US20120044744 PROGRAMMABLY REVERSIBLE RESISTIVE DEVICE CELLS USING POLYSILICON DIODES  
Polysilicon diodes fabricated in standard CMOS logic processes can be used as program selectors for reversible resistive devices such as PCRAM, RRAM, CBRAM, or other memory cells. The reversible...
US20090052230 INTEGRATED CIRCUIT INCLUDING SILICIDE REGION TO INHIBIT PARASITIC CURRENTS  
An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first...
US20130044535 REFERENCE CELL CIRCUIT AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE INCLUDING THE SAME  
Included are reference cells each including a variable resistance element which reversibly changes between a predetermined low resistance state LR and a predetermined high resistance state HR...
US20140268994 Write-Time Based Memristive Physical Unclonable Function  
A physical unclonable function (PUF) device consisting of a hybrid CMOS-memristor circuit that leverages variations in the required write-time of a memristor. Variations in the time required to...
US20120014165 OPTIMIZED SOLID ELECTROLYTE FOR PROGRAMMABLE METALLIZATION CELL DEVICES AND STRUCTURES  
A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable...
US20150187414 DYNAMIC SENSE CIRCUITRY  
A dynamic sense circuit to determine memristor states within a memristor crossbar array that includes a differential comparator made up of a resistance capacitance (RC) network to capture a...
US20120113706 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS  
A memristor (100, 100′, 100″) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact...
US20110026302 WRITE VERIFY METHOD FOR RESISTIVE RANDOM ACCESS MEMORY  
Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM...
US20090080243 DEVICE CONTROLLING PHASE CHANGE STORAGE ELEMENT AND METHOD THEREOF  
Devices controlling a phase change storage element and methods for increasing reliability of a phase change storage element. The invention introduces a first operation mode and a second operation...
US20150262662 NONVOLATILE LOGIC AND SECURITY CIRCUITS  
In some examples, a nonvolatile storage element may be configured to store a state or value during a low power or powered down period of a circuit. For example, the nonvolatile storage element may...
US20100321977 PROGRAMMING REVERSIBLE RESISTANCE SWITCHING ELEMENTS  
A storage system and method for operating the storage system that uses reversible resistance-switching elements is described. Techniques are disclosed herein for varying programming conditions to...
US20130021845 PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL  
A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell...
US20120320661 METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND NONVOLATILE STORAGE DEVICE  
A method includes applying a first polarity writing voltage pulse to a metal oxide layer to change its resistance state from high to low into a write state, applying a second polarity erasing...
US20110267870 Decoders Using Memristive Switches  
A decoding structure employs a main terminal (130), a first memristive switch (112) connected between the main terminal (130) and a first addressable terminal (132), and a second memristive switch...
US20120212255 Logic Circuit, Integrated Circuit Including The Logic Circuit, And Method Of Operating The Integrated Circuit  
The logic circuit includes at least one variable resistance device configured such that a resistance value of the at least one variable resistance device varies according to at least one selected...
US20140153313 System and Methods Using a Multiplexed Reference for Sense Amplifiers  
A sense amplifier system includes a first path, a second path, a memory cell, a first reference cell, a second reference cell, and a switch component. The switch component is configured to switch...
US20100321976 Split Path Sensing Circuit  
A sensing circuit is disclosed. The sensing circuit includes a first path including a first resistive memory device and a second path including a reference resistive memory device. The first path...
US20130051119 RESISTIVE MEMORY AND PROGRAM VERIFICATION METHOD THEREOF  
A resistive memory including a transistor and a variable resistor is disclosed. The transistor includes a gate, a source and a drain. The variable resistor is coupled between the drain and a node....
US20080137396 Spin glass memory cell  
A memory cell includes a first electrode, a second electrode, and spin glass material. The spin glass material is coupled between the first electrode and the second electrode.
US20080316808 Nonvolatile memory device containing carbon or nitrogen doped diode  
A nonvolatile memory device includes at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in...
US20130083594 MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY  
A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined...
US20110051508 MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY  
A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined...