Matches 1 - 29 out of 29


Match Document Document Title
US20120224407 INTEGRATED CIRCUIT HAVING A CLOCK DESKEW CIRCUIT THAT INCLUDES AN INJECTION-LOCKED OSCILLATOR  
Methods and apparatuses featuring an injection-locked oscillator (ILO) are described. In some embodiments, an ILO can have multiple injection points and a free-running frequency that is capable of...
US20050052894 Uses of nanofabric-based electro-mechanical switches  
Uses of electromechanical nanoswitches made from preformed carbon nanotube films, layers, fabrics, ribbons, are disclosed.
US20080271778 USE OF ELECTROMAGNETIC EXCITATION OR LIGHT-MATTER INTERACTIONS TO GENERATE OR EXCHANGE THERMAL, KINETIC, ELECTRONIC OR PHOTONIC ENERGY  
The present disclosure concerns a means to use at least a form of electromagnetic excitation or light-matter interactions in a structure or material having one or more addressable frequencies to...
US20110261605 Graphene-based switching elements using a diamond-shaped nano-patch and interconnecting nano-ribbons  
The use of diamond-shaped graphene nano-patches as novel non-volatile switching elements exhibiting transitions between high and low conductance states based on changes of magnetic ordering of...
US20050078501 Method and arrangement for compensation of a magnetic bias field in a storage layer of a magnetoresistive memory cell  
An arrangement is described for compensation of a magnetic bias field in a storage layer of at least one magnetoresistive memory cell provided in a semiconductor device. In this arrangement, at...
US20050243592 High density data storage device having eraseable bit cells  
Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a...
US20070047287 Method and apparatus for storing a three-dimensional arrangement of data bits in a solid-state body  
A method which serves for writing a three-dimensional arrangement of data bits to a solid-state body comprises the steps of selecting a protein having fluorescence properties that can be altered...
US20070285962 PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF  
A phase change memory device is disclosed. A first columnar electrode and a second columnar electrode are provided, both arranged horizontally. A phase change layer is interposed between the first...
US20090129139 NANO-ELECTRO-MECHANICAL MEMORY CELLS AND DEVICES  
A scalable nano-electro-mechanical memory cell design that requires only conventional semiconductor fabrication materials and surface micromachining technology, and is suited for use in...
US20090237980 ELECTROMECHANICAL SWITCH AND METHOD OF FORMING THE SAME  
A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first...
US20070115713 Non-volatile electromechanical configuration bit array  
A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory.
US20100163376 Electrostatic Actuator  
The present invention relates to a micro-electromechnical system (MEMS) and, more particularly, to an electrostatic actuator, and a driving method thereof and an application device thereof. The...
US20080094872 Method for forming organic layer pattern, organic layer pattern prepared by the same and organic memory devices comprising the pattern  
Disclosed are a method for forming an organic layer pattern which is characterized by forming a thin layer by coating a coating solution including a polyimide-based polymer having a heteroaromatic...
US20090052223 Switching Element, Method of Manufacturing the Switching Element, and Memory Element Array  
Disclosed is a switching element including: an insulative substrate; a first electrode and a second electrode provided to the insulative substrate; an interelectrode gap between the first...
US20080106923 Phase Change Memory Cells with Dual Access Devices  
A self aligning memory device, with a memory element switchable between electrical property states by the application of energy, includes a substrate and word lines, at least the sides of the word...
US20120236622 NON-VOLATILE GRAPHENE-DRUM MEMORY CHIP  
The present invention relates to non-volatile memory chips having graphene drums. In some embodiments, the non-volatile memory chips have one or more layers that each includes a plurality of...
US20090182965 Securing data in memory device  
The various embodiments of the invention relate generally to semiconductors and memory technology. More specifically, the various embodiment and examples of the invention relate to memory devices,...
US20050007826 Method for utilizing a memory device for a PLC  
Certain exemplary embodiments can provide a method for utilizing a memory cartridge connected to a PLC. The memory cartridge can comprise a plurality of memory segments. The method can comprise a...
US20120106232 Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells  
Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having...
US20090034318 SWITCHING DEVICE, REWRITABLE LOGIC INTEGRATED CIRCUIT, AND MEMORY DEVICE  
A switching device according to the present invention includes ion conductive layer 23 containing titanium oxide, first electrode 21 provided in contact with ion conductive layer 23, and second...
US20090284669 Data storing device and storing method for the same  
A memory cell is provided in the present invention. The memory cell includes a first electrode receiving a first voltage to form an electric field therearound; and a combination arranged on the...
US20120294062 STACK PROCESSOR USING A FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) FOR CODE SPACE AND A PORTION OF THE STACK MEMORY SPACE  
A stack processor using a ferroelectric random access memory (F-RAM) for code space and a portion of the stack memory space. By storing some of the associated stacks in complementary metal oxide...
US20100110746 MEMORY CELL WITH ALIGNMENT STRUCTURE  
A memory cell that includes a memory element configured for switching from a first data state to a second data state by passage of current therethrough. The memory cell includes a top electrode...
US20080247216 METHOD AND APPARATUS FOR IMPLEMENTING IMPROVED WRITE PERFORMANCE FOR PCRAM DEVICES  
A method of implementing a write operation for a programmable resistive random access memory array includes coupling a current source to a bit line associated with a programmable resistive memory...
US20170076822 CASIMIR EFFECT MEMORY CELL  
A digital memory device includes a moveable element that is configured to move between a first stable position and a second stable position, where the moveable element comprises a first conducting...
US20160322089 Magneto-Optical Device  
A magneto-optical device comprising a magnetic unit and an optical unit, an electronic device comprising the magneto-optical device, a method of energy saving using the magneto-optical device, an...
US20160148657 A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH TEMPORARY DATA RETENTION CELLS AND CONTROL METHOD THEREOF  
A non-violate memory device and a control method thereof are provided. The non-violate memory device includes a flip-flop, a retention cell and a memory cell. The flip-flop includes an output...
US20130242636 ELECTROMECHANICAL INTEGRATED MEMORY ELEMENT AND ELECTRONIC MEMORY COMPRISING THE SAME  
An electromechanical memory element includes a fixed body and a deformable element attached to the fixed body. An actuator causes a deformation of the deformable element from a first position...
US20110110139 MULTI-STATE MEMORY AND MULTI-FUNCTIONAL DEVICES COMPRISING MAGNETOPLASTIC OR MAGNETOELASTIC MATERIALS  
Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or...

Matches 1 - 29 out of 29