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US20110102949 METHOD TO IMPROVE READER STABILITY AND WRITER OVERWRITE BY PATTERNED WAFER ANNEALING  
A method of fabricating a tunneling magnetoresistance (TMR) reader is disclosed. A TMR structure comprising at least one ferromagnetic layer and at least one nonmagnetic insulating layer is...
US20080170338 METHOD AND CALCULATOR FOR MODELING NON-EQUILIBRIUM SPIN POLARIZED CHARGE TRANSPORT IN NANO-STRUCTURES  
A method and calculator for obtaining spin polarized quantum transport in 3-dimensional atom-scale spintronic (spin electronics) devices under finite bias voltage, based on implementing Density...
US20100302689 Bio-sensor with hard-direction field  
A magnetic sensor for identifying small magnetic particles bound to a substrate includes a regular, planar orthogonal array of MTJ cells formed within or beneath that substrate. Each MTJ cell has...
US20070103818 Variable resistance element and method of using the same  
A variable resistance element whose resistance varies according to a magnitude of current applied thereto, and a method of using the element are provided. The variable resistance element has a...
US20070097560 Magnetic layer with grain refining agent  
A magnetic sensor includes a magnetic layer comprising magnetic material and a grain refining agent. The magnetic layer having a grain-refined magnetic layer surface. A layer adjacent the magnetic...
US20090141409 SPIN FILTER SPINTRONIC DEVICES  
A spin filter transistor having a semiconductor structure. A spin injector including a first spin filter tunnel barrier is positioned on the semiconductor structure. A spin detector including a...
US20110096443 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application  
A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance...
US20060227466 SPIN-INJECTION MAGNETORESISTANCE EFFECT ELEMENT  
The present invention provides a spin-injection magnetoresistance effect element that can avoid use of a large writing current and allows use of a large reading current. The spin-injection...
US20100097730 SPIN HIGH-FREQUENCY MIXER AND METHOD OF MANUFACTURE THEREOF  
A spin high-frequency mixer includes a spin current generator generating a spin current upon input of a local oscillator signal, a TMR device which inputs a high-frequency signal and the spin...
US20110063758 Spin filter junction and method of fabricating the same  
A magnetic tunnel junction having a first electrode separated from a second electrode by a tunneling barrier is provided. The tunneling barrier is a ferromagnetic insulator that provides a spin...
US20070188940 Tunnel MR head with long stripe height stabilized through side-extended bias layer  
In a tunnelmagneto resistive (TMR) device, free stack sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack,...
US20080062580 SPIN MEMORY AND SPIN FET  
A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction...
US20070242395 Methods of manipulating the relaxation rate in magnetic materials and devices for using the same  
In accordance with the present invention, ferromagnetic thin films of iron that have reduced relaxation rates and methods of making the same are provided. It should be noted that pure iron is a...
US20070247753 THIN FILM MAGNETIC HEAD SUBSTRATE WITH MONITOR ELEMENT  
A thin film magnetic head substrate includes a plurality of head element portions having read elements and write elements in rows. Adjacent head element portions interpose a read monitor element...
US20070183101 Magnetoresistance device including diffusion barrier layer  
A magnetoresistance device that has a substrate, an underlayer, a magnetoresistance structure, and a diffusion barrier layer is provided. The underlayer is formed on top of the substrate. The...
US20110164338 MAGNETIC TUNNEL JUNCTION TRANSISTOR DEVICE  
A magnetic tunnel junction transistor (MTJT) device includes a source-drain region comprising a source electrode and a drain electrode, a double MTJ element formed between the source electrode and...
US20070064351 Spin filter junction and method of fabricating the same  
A magnetic tunnel-junction having a first electrode separated from a second electrode by a tunneling barrier is provided. The tunneling barrier is a ferromagnetic insulator that provides a spin...
US20110007430 Static Magnetic Field Assisted Resistive Sense Element  
Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense...
US20090038143 Method of manufacturing magneto-resistive device, magnetic head, head suspension assembly and magnetic disk apparatus  
A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The...
US20090161267 FERROMAGNETIC TUNNEL JUNCTION DEVICE, MAGNETIC HEAD, AND MAGNETIC STORAGE DEVICE  
According to an aspect of an embodiment, a ferromagnetic tunnel junction device includes: a first pinned magnetic member including a ferromagnetic material having a boron atom; a second pinned...
US20080055792 MEMORY CELLS AND DEVICES HAVING MAGNETORESISTIVE TUNNEL JUNCTION WITH GUIDED MAGNETIC MOMENT SWITCHING AND METHOD  
A magnetoresistive memory cell includes a magnetic tunnel junction (MTJ). The MTJ includes a magnetic layer having a pinned magnetic moment, a tunneling layer, and a free layer. The free layer...
US20090316309 HYBRID TRACKWIDTH READ ELEMENT  
A magneto-resistive (MR) device for reading at least one of a legacy data signal and a present data signal magnetically recorded on at least one legacy track and a least one present track,...
US20090027811 Spin transfer MRAM device with reduced coefficient of MTJ resistance variation  
We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a...
US20090260719 IN-SITU ANNEALING OF A TMR SENSOR  
A method in one embodiment includes applying a current to a lead of a tunneling magnetoresistance sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being...
US20100053822 STRAM CELLS WITH AMPERE FIELD ASSISTED SWITCHING  
A magnetic tunnel junction cell that has a ferromagnetic pinned layer, a ferromagnetic free layer, and a non-magnetic barrier layer therebetween. The free layer has a larger area than the pinned...
US20090268351 TUNNEL MAGNETORESISTANCE (TMR) STRUCTURES WITH MGO BARRIER AND METHODS OF MAKING SAME  
A method in one embodiment includes forming a first layer of magnesium above at least one of a free layer and a reference layer; exposing the first layer of magnesium to an oxidizing environment...
US20080247096 MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME  
A magnetic memory including a stack, a first writing wire, and a second writing wire is provided. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free...
US20090040663 MAGNETIC MEMORY  
A magnetic memory includes a stack, a first writing wire, and a second writing wire. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as...
US20110141613 TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME  
According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming...
US20080030906 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE  
A magnetoresistive effect element comprises a first magnetic layer having a pinned magnetization direction, and a second magnetic layer having a magnetization direction changed corresponding to an...
US20060221511 Low-resistance tunnel magnetoresistive effect element, and manufacturing method, testing method and testing apparatus for the element  
A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many...
US20080261082 TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER  
A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O...
US20090174971 CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS  
A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field;...
US20070086122 CPP magnetoresistive sensor having a reduced, shield defined track width  
A current perpendicular to plane (CPP) magnetoresistive sensor having a track width that is defined by an area of contact with a shield/lead. The sensor includes a sensor stack having a width W1....
US20090086384 MAGNETO-RESISTANCE EFFECT ELEMENT INCLUDING FERROMAGNETIC LAYER HAVING GRANULAR STRUCTURE  
A magneto-resistance effect element of the present invention comprises: a pair of ferromagnetic layers whose magnetization directions change in accordance with an external magnetic field, each of...
US20090059443 Magnetoresistive element including insulating film touching periphery of spacer layer  
An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The...
US20080151439 TMR SENSOR HAVING MAGNESIUM/MAGNESIUM OXIDE TUNNEL BARRIER  
A tunnel junction magnetoresistive sensor having improved TMR performance (dR/R) and improved area resistance. The sensor includes a barrier layer sandwiched between a magnetic pinned layer...
US20060245117 Magnetic sensor with confined sense current  
A sensor includes a sensor stack and a layer of high resistivity material having a precursor within the sensor stack. When a current is applied at the precursor, a current confining path is formed...
US20090141410 CURRENT-PERPENDICULAR-TO-THE-PLANE STRUCTURE MAGNETORESISTIVE ELEMENT AND METHOD OF MAKING THE SAME AND STORAGE APPARATUS  
An electrically-conductive or insulating non-magnetic intermediate layer is inserted between a free magnetic layer and a pinned magnetic layer in a current-perpendicular-to-the-plane (CPP)...
US20080112092 Method and Apparatus For Oxidizing Conductive Redeposition in TMR Sensors  
A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an...
US20050207071 Magnetosensitive device and method of manufacturing the same  
A magnetosensitive device is disclosed that includes a ferromagnetic tunnel junction formed of two ferromagnetic films and an insulating film sandwiched therebetween. The insulating film is an...
US20100177448 High SNR CPP Reader Using High Frequency Standing Wave Interference Detection  
An apparatus includes a current perpendicular to the plane sensing element, a DC current source connected to the sensing element, a microwave AC current source connected to supply AC current to...
US20090257151 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications  
A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular...
US20110235217 Fabricating A Magnetic Tunnel Junction Storage Element  
Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a...
US20080218913 TUNNELING MAGNETORESISTIVE ELEMENT WHICH INCLUDES Mg-O BARRIER LAYER AND IN WHICH NONMAGNETIC METAL SUBLAYER IS DISPOSED IN ONE OF MAGNETIC LAYERS  
In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta...
US20070183100 Magnetic tunnel transistor with thin read gap for head applications  
A magnetic tunnel transistor (MTT) for a disk drive read head includes a barrier of TiO disposed between a ferromagnetic collector and a ferromagnetic base for preferentially selecting only “hot”...
US20090015969 Magnetic thin film, magnetoresistance effect device and magnetic device using the same  
Magnetic thin film having high spin polarizability and a magnetoresistance effect device and a magnetic device using the same, provided with a substrate (2) and Co2MGa1-xAlx thin film (3) formed...
US20090154030 Magnetic head and magnetic recording apparatus  
Embodiments of the present invention provide an accumulation element with high resolving power and high output suitable for magnetic recording and reproducing at high recording density. According...
US20070188938 Method and apparatus for providing improved pinning structure for tunneling magnetoresistive sensor  
A method and apparatus for providing improved pinning structure for tunneling magnetoresistive sensor is disclosed. A three layer pinned structure is used, wherein the second pinned layer is...
US20070171580 TUNNEL TYPE MAGNETIC DETECTION ELEMENT IN WHICH FE COMPOSITION OF TOP/BOTTOM SURFACE OF INSULATING BARRIER LAYER IS ADJUSTED AND MANUFACTURING METHOD THEREOF  
Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer...

Matches 1 - 50 out of 96 1 2 >