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US20130128390 Trapezoidal Back Bias and Trilayer Reader Geometry to Enhance Device Performance  
A magnetoresistive sensor is generally disclosed. Various embodiments of a sensor can have at least a trilayer sensor stack biased with a back biasing magnet adjacent a back of the trilayer...
US20110122534 MAGNETORESISTANCE SENSORS PINNED BY AN ETCH INDUCED MAGNETIC ANISOTROPY  
Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The...
US20120120520 CPP-TMR SENSOR WITH NON-ORTHOGONAL FREE AND REFERENCE LAYER MAGNETIZATION ORIENTATION  
A CPP spin-valve magnetic head, according to one embodiment includes a ferromagnetic free layer having a bias-point magnetization nominally oriented in a first direction; a ferromagnetic reference...
US20090168270 EXCHANGE-COUPLED ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT  
In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element...
US20130003229 Giant Magnetoresistive Sensor Having Horizontal Stablizer  
A giant magnetoresistive (GMR) sensor for reading information from a magnetic storage medium has a first non-magnetoresistive layer, a first magnetoresistive layer formed on the first...
US20100020447 SYSTEM WITH 90 DEGREE SENSE LAYER MAGNETIC ORIENTATION  
A system including a sense layer, a first pinned layer and a first interlayer. The first pinned layer is held in a fixed magnetic orientation. The first interlayer is configured to couple the...
US20140168824 MAGNETIC SENSOR HAVING AN EXTENDED PINNED LAYER AND SHAPE ENHANCED BIAS STRUCTURE  
A magnetic read sensor having an extended pinned layer structure and also having an extended free layer structure. The extended pinned layer structure and extended free layer structure both extend...
US20100296203 SPIN VALVE ELEMENT AND METHOD OF DRIVING SAME  
A method for driving a spin valve element, including passing driving current through the spin valve element to generate an oscillation signal, and performing amplitude modulation of the driving...
US20070211392 Spin valve with Ir-Mn-Cr pinning layer and seed layer including Pt-Mn  
In a disk drive GMR or TMR head that uses Ir—Mn—Cr as a pinning layer, Pt—Mn is used as part of the seed layer below the pinning layer to enhance GMR and pinning without deleteriously affecting...
US20070253121 SPIN ACCUMULATION DEVICE AND MAGNETIC SENSOR APPLIED WITH SPIN CURRENT CONFINED LAYER  
A spin accumulation device with high output, high resolution, and low noise. A spin current confined layer is located between a voltage-detection magnetic conductive material and a nonmagnetic...
US20130222949 SPIN-TORQUE OSCILLATOR (STO) WITH ANTIPARALLEL-COUPLED FREE FERROMAGNETIC LAYERS AND MAGNETIC DAMPING  
A spin-torque oscillator with antiferromagnetically-coupled free layers has at least one of the free layers with increased magnetic damping. The Gilbert magnetic damping parameter (α) is at least...
US20060146452 CIP GMR enhanced by using inverse GMR material in AP2  
Improved performance of CIP GMR devices has been achieved by modifying the composition of AP2. Said modification comprises the addition of chromium or vanadium to AP2, while still retaining its...
US20070137027 METHOD FOR MANUFACTURING A TRAILING SHIELD STRUCTURE FOR A PERPENDICULAR MAGNETIC WRITE HEAD  
A method for forming a head having a trailing shield that includes forming a gap layer above a pole, forming a mask above the gap layer, and forming a trailing shield above the gap layer and...
US20080316657 TMR or CPP structure with improved exchange properties  
An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading...
US20120229936 MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER  
According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the...
US20100103565 ST-RAM EMPLOYING HEUSLER ALLOYS  
A memory cell including a free magnetic layer, the magnetization of which is free to rotate under the influence of spin torque; an insulating layer; and a pinned magnetic layer, wherein at least...
US20080291585 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY  
It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A...
US20110026168 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH CoFeGe FERROMAGNETIC LAYERS AND Ag OR AgCu SPACER LAYER  
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer and a spacer...
US20070253122 Magneto-resistive element and method of manufacturing the same  
A magneto-resistive element includes: a first magnetic layer having a substantially fixed magnetization direction; a thin film layer disposed on the first magnetic layer and having at least one of...
US20070165339 Control and manipulation of pinned layer remanence of a platinum manganese based bottom spin valve  
Methods and apparatus provide a magnetic head that includes a magnetoresistive read sensor. A remanence of a pinned layer within the read sensor can be improved without substantially altering...
US20090201614 SPIN-TORQUE OSCILLATOR, MAGNETIC HEAD INCLUDING THE SPIN-TORQUE OSCILLATOR, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS  
It is made possible to to provide a spin-torque oscillator that has a high Q value and a high output. A spin-torque oscillator includes: an oscillating field generating unit configured to generate...
US20100302690 Spin-Torque Magnetoresistive Structures  
Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a first ferromagnetic layer, a first nonmagnetic...
US20050264951 Dual CPP GMR with synthetic free layer  
A dual CPP GMR read head having a first pinned layer structure that is self pinned, and a second pinned layer structure that is AFM pinned. A synthetic free layer is sandwiched between the first...
US20100091416 MAGNETIC READ HEAD  
A magnetoresistive head which has a high head SNR by reducing generated mag-noise without deteriorating an output comprises, according to one embodiment, a magnetoresistive sensor having a...
US20090190262 Magnetoresistive element and method of manufacturing the same  
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned...
US20080285183 MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY  
An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect...
US20090207534 MAGNETO-RESISTANCE EFFECT ELEMENT INCLUDING STACK WITH DUAL FREE LAYER AND MAGNETIZED SHIELD ELECTRODE LAYERS  
A magneto-resistance effect element comprises; a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer in which respective magnetization directions change in...
US20080062584 METHOD FOR MANUFACTURING A MAGNETORESISTIVE SENSOR HAVING A NOVEL JUNCTION STRUCTURE FOR IMPROVED TRACK WIDTH DEFINITION AND PINNED LAYER STABILITY  
A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The sensor has substantially vertical side walls that define the track width of...
US20080074806 MAGNETIC OSCILLATION ELEMENT  
A magnetic oscillation element includes: a magnetization fixing layer whose magnetization direction is substantially pinned toward one direction; a nonmagnetic layer that is disposed on the...
US20080232003 MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC LAMINATION STRUCTURAL BODY, AND MANUFACTURE METHOD FOR MAGNETIC LAMINATION STRUCTURAL BODY  
An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the...
US20090027812 MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD  
The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction...
US20080043380 Magnetoresistive element and manufacturing method thereof  
Intensity of the longitudinal bias field applied to a free soft magnetic layer in a magnetoresistive element can be adjusted after formation, by providing of a composite ferromagnetic layer for...
US20090244792 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY  
A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization...
US20070274010 Magnetoresistive element including heusler alloy layer and method of manufacturing same  
An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free...
US20060203397 Magnetoresistive effect element having a thin non-magnetic intermediate layer  
A magneto-resistive effect element includes a free layer having a magnetization direction which varies with respect to an external magnetic field; a pinned layer which includes a stacked structure...
US20070297100 Magneto-resistive effect element and magnetic disk device  
An alignment control film is formed on an alumina film by sputtering. A Ti film, a Ta film, a Ru film, a MgO film or the like is formed as the alignment control film. A lower shield layer is...
US20120206839 MAGNETORESISTIVE DEVICE WITH ENHANCED PINNED LAYER  
A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance...
US20110019314 MAGNETORESISTIVE DEVICE WITH ENHANCED PINNED LAYER  
A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance...
US20140293473 THIN FILM MAGNETIC HEAD WITH SIDE LAYERS UNDER COMPRESSION STRESS  
A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the...
US20100033881 MAGNETIC FIELD SENSING SYSTEM USING SPIN-TORQUE DIODE EFFECT  
A magnetic field sensing system with a current-perpendicular-to-the-plane (CPP) sensor, like that used for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) spin-valve (SV)...
US20080037184 Exchange-coupling film incorporating stacked antiferromagnetic layer and pinned layer, and magnetoresistive element including the exchange-coupling film  
An exchange-coupling film incorporates an antiferromagnetic layer and a pinned layer. The pinned layer includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic...
US20080013223 GMR DEVICE OF THE CPP STRUCTURE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM  
In the GMR device of the CPP structure using the synthetic pinned layer as the fixed magnetization layer (pinned layer), the width W1 of the inner pin layer is set at 50 nm or less; the fixed...
US20070201169 MAGNETORESISTANCE ELEMENT EMPLOYING HEUSLER ALLOY AS MAGNETIC LAYER  
An advantage of the application is to provide a magnetoresistance element capable of increasing a plateau magnetic field Hp1 while maintaining high ΔRA. A magnetic layer 4c1 adjacent to a...
US20060077598 Resistor having a predetermined temperature coefficient  
A material stack has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field. The electrical resistance of the material stack has a...
US20080204945 MAGNETORESISTANCE SENSORS PINNED BY AN ETCH INDUCED MAGNETIC ANISOTROPY  
Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The...
US20070121255 Magneto-resistance effect element having Heusler alloy compounds adjacent to spacer layer  
A magneto-resistance effect element according to the present invention comprises a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in...
US20090161268 CURRENT-PERPENDICULAR-TO-PLANE READ SENSOR WITH AMORPHOUS FERROMAGNETIC AND POLYCRYSTALLINE NONMAGNETIC SEED LAYERS  
A method, apparatus, and article of manufacture for a current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) or a tunneling magnetoresistance (TMR) read sensor is proposed. The CPP...
US20090046397 METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH IMPROVED THERMAL STABILITY  
A synthetic antiferromagnet (SAF) structure includes a bottom ferromagnetic layer, a coupling layer formed over the bottom ferromagnetic layer, and a top ferromagnetic layer formed over the...
US20090059444 METHODS AND STRUCTURES FOR AN INTEGRATED TWO-AXIS MAGNETIC FIELD SENSOR  
A two-axis, single-chip external magnetic field sensor incorporates tunneling magneto-resistance (TMR) technology. In one embodiment, an integrated device includes at least two sensor elements...
US20080158741 CURRENT-PERPENDICULAR-TO-PLANE SENSOR EPITAXIALLY GROWN ON A BOTTOM SHIELD  
A current-perpendicular-to-plane (CPP) magnetoresistance sensor and a method for forming a current-perpendicular-to-plane (CPP) magnetoresistance sensor. The method includes providing a...

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