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US20070145402 |
SEMICONDUCTOR COMPONENT WHICH EMITS RADIATION, AND METHOD FOR PRODUCING THE SAME
This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that... |
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US20060180820 |
Light-emitting semiconductor chip and method for the manufacture thereof
A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film... |
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US20070187704 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, INTEGRATED SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, IMAGE DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, ILLUMINATING DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor light emitting element, manufacturing method. thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method... |
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US20090032799 |
LIGHT EMITTING DEVICE
A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit... |
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US20060273328 |
Light emitting nanowires for macroelectronics
Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is... |
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US20060151798 |
Semiconductor light emitting element and semiconductor light emitting device
For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting... |
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US20080258130 |
Beveled LED Chip with Transparent Substrate
A light emitting diode is disclosed that includes a transparent (and potentially low conductivity) silicon carbide substrate, an active structure formed from the Group III nitride material system... |
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US20050145864 |
Semiconductor light-emitting element and method of manufacturing the same
There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate... |
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US20050253157 |
Semiconductor light emitting device and semiconductor light emitting apparatus
A first semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second... |
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US20060145170 |
Nitride based semiconductor light emitting device
The present invention provides a nitride-based semiconductor light emitting device basically comprising a first conductivity type nitride semiconductor layer, active layer and second conductivity... |
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US20070187703 |
Light emitting systems
Light-emitting systems, and related components, systems and methods are disclosed. |
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US20060267034 |
Semiconductor light-emitting device and method for fabricating the same
Projections/depressions of a two-dimensional periodic structure are formed in a p-GaN layer (4) such that the period of the projections/depressions is 1 to 20 times the wavelength of light... |
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US20100220757 |
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF
One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a... |
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US20060175625 |
Light emitting element, lighting device and surface emission illuminating device using it
In a non-sealed type light emitting device in which a diode structure on a face of a transparent substrate by lamination of an n-type semiconductor layer and a p-type semiconductor layer, an outer... |
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US20120104411 |
TEXTURED III-V SEMICONDUCTOR
A method for fabricating a III-nitride semiconductor film, comprising depositing or growing a III-nitride semiconductor film in a semiconductor light absorbing or light emitting device structure;... |
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US20150123152 |
LIGHT-EMITTING ELEMENT
A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking... |
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US20060243993 |
Light emitting diode chip and light emitting diode using the same
A light emitting diode chip includes a first electrode (13), a reflective layer (11) formed on the first electrode, a light emitting layer (12) formed on the reflective layer and a second... |
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US20050230697 |
Hyperboloid-drum structures and method of fabrication of the same using ion beam etching
The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging... |
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US20130270589 |
OPTOELECTRONIC DEVICE WITH NON-CONTINUOUS BACK CONTACTS
An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of... |
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US20160013363 |
LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF
A light-emitting element comprises: a light-emitting stack configured to emit light; and a transparent substrate comprising an upper surface on which the light-emitting stack is formed, a bottom... |
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US20070085098 |
Patterned devices and related methods
Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. The device may include an interface having a dielectric function that varies spatially... |
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US20080128720 |
Light emitting device
A light emitting device is closed. More particularly, a light emitting device capable improving light-extraction efficiency is disclosed. The light emitting device includes a plurality of layers... |
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US20070249109 |
Optical device and optical module
A high resistance re-grown layer is disposed around an optical device having a mesa structure. Thus, a mesa portion having a plane direction that appears in etching of a circular main structure is... |
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US20070138493 |
Light-receiving module
A light receiving module M comprises a photodiode 1, an IC chip 2, a light permeable and electrically insulating sealing resin member 4 for sealing the photodiode 1 and the IC chip 2, a lens 43... |
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US20130299844 |
ENHANCED LIGHT EXTRACTION EFFICIENCY FOR LIGHT EMITTING DIODES
Systems, methods, and other embodiments associated with increased light extraction efficiency in light emitting diodes are described. According to one embodiment, a light emitting diode apparatus... |
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US20060038184 |
Light-emitting device, manufacturing method of particle and manufacturing method of light-emitting device
A light-emitting device includes, in order of mention: a positive hole supply layer; a particle layer comprising particles of semiconductor crystals and a conductive medium, the conductive medium... |
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US20140077234 |
SEMICONDUCTOR STRUCTURE WITH PATTERNED BURIED LAYER
An apparatus comprises a substrate, a first buried layer formed over the substrate, the first buried layer comprising one or more raised mesa structures, a second buried layer formed over the... |
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US20100139759 |
OPTICAL DEVICE
The present invention relates to an optical device and to a method of fabricating the same. In embodiments, the invention relates to a photovoltaic device or solar cell. The optical device... |
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US20130248901 |
LIGHT-EMITTING DIODE COMPRISING DIELECTRIC MATERIAL LAYER AND MANUFACTURING METHOD THEREOF
Disclosed is a light-emitting diode with a semiconductor layer including dielectric material layer, and a manufacturing method thereof for increasing the external quantum efficiency. The... |
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US20070272934 |
LED device with improved life performance
A light-emitting diode with an improved service life is provided. The diode is formed from a transparent outer shell that contains a heat-resistant encapsulant at least partially surrounding a... |
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US20070296092 |
Pixel circuit
A pixel circuit includes a LED, first switch, second switch, first transistor, second transistor and capacitor. The LED has a first end receiving a first supply voltage. The first switch has a... |
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US20140284637 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, a method for manufacturing a semiconductor light emitting device includes performing plasma processing of a stacked body. The stacked body has a first semiconductor... |