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Document |
Document Title |
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US20060180580 |
High speed, laser-based marking method and system for producing machine readable marks on workpieces and semiconductor devices with reduced subsurface damage produced thereby
An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in... |
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US20080284048 |
Alignment mark, semiconductor chip including the same, semiconductor package including the chip and methods of fabricating the same
Provided are an alignment mark with a higher rate of recognition, a semiconductor chip including the alignment mark, a semiconductor package including the semiconductor chip, and methods of... |
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US20060249859 |
Metrology system and method for stacked wafer alignment
Using imaging techniques to determine if stacked wafers are in proper alignment. An infrared radiation source and an infrared camera are positioned on opposing sides of a stacked wafer. The... |
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US20060027809 |
Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an... |
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US20070111477 |
Semiconductor wafer
A semiconductor wafer is disclosed for which irradiation of a laser beam forms a modified region due to multiphoton absorption to thereby facilitate dicing of the semiconductor wafer. The... |
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US20050140030 |
Scribe street width reduction by deep trench and shallow saw cut
In a method to singulate a semiconductor wafer (100) into chips, trench streets (107) of predetermined depth (105a) are formed across the first, active wafer surface (102) to define the outline of... |
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US20120112370 |
TEMPLATE, METHOD OF FORMING TEMPLATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, a template includes a pattern part which is provided on a substrate and corresponds to a pattern of a semiconductor device, the pattern of the semiconductor device... |
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US20070069400 |
ALIGNMENT MARK, ALIGNMENT APPARATUS AND METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
An alignment mark including a first mark usable for both coarse alignment measurement in a first direction and fine alignment measurement in the first direction, and a second mark usable for... |
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US20160005695 |
PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF
A method for fabricating a package structure is provided, which includes the steps of: providing a base portion having at least an electronic element embedded therein and at least a positioning... |
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US20100327451 |
ALIGNMENT MARK
An alignment mark for defect inspection is disclosed. The alignment mark includes: a semiconductor substrate; a first type well disposed in the semiconductor substrate; a second type doping region... |
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US20090273102 |
Semiconductor Substrate and Method for Manufacturing the Same
A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an... |
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US20050186754 |
Solid-state imaging apparatus having multiple anti-reflective layers and method for fabricating the multiple anti-reflective layers
A solid-state imaging apparatus comprising multiple anti-reflective layers which can improve a smear characteristic while suppressing a dark defect and a method for fabricating the multiple... |
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US20070194466 |
Overlay measurement mark and pattern formation method for the same
Fine projection patterns are added to each side of a base mark pattern of an overlay measurement mark. Thus, film separation in the overlay measurement mark can be prevented. |
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US20060175718 |
Semiconductor device and method of manufacturing the same
A semiconductor device includes a semiconductor substrate having a first element isolation trench with a first opening width and a second element isolation trench with a second opening width... |
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US20070222089 |
Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device
Disclosed are a semiconductor wafer, a semiconductor device, and a method of manufacturing the semiconductor device, which are capable of easily carrying out an alignment between a semiconductor... |
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US20060273385 |
Trenched MOSFET device with contact trenches filled with tungsten plugs
A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells in an active cell area and extending as... |
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US20100225011 |
System and Method for Integrated Circuit Fabrication
A system and method for integrated circuit fabrication is provided. A wafer holding system includes a wafer carrier that holds the wafer at a specified alignment, and a top ring disposed on a top... |
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US20090102070 |
Alignment Marks on the Edge of Wafers and Methods for Same
A semiconductor wafer having alignment marks a sufficient distance from the outer wafer edge that reference dicing channels and a method for same. A process for dicing WLUF coated wafers into... |
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US20080265445 |
Marks for the Alignment of Wafer-Level Underfilled Silicon Chips and Method to Produce Same
A semiconductor wafer and the process for aligning wafer level underfill material coated chips with a substrate via alignment marks made visible through laser dicing. |
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US20050026385 |
Method for manufacturing a semiconductor device and semiconductor device with overlay mark
In a method for forming a semiconductor device and a semiconductor device having an overlay mark, a first pattern for the semiconductor device is formed in a semiconductor device formation region... |
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US20160079182 |
METHOD FOR PROCESSING A CARRIER AND A CARRIER
A method for processing a carrier may include forming at least one recess structure at least one of over and in the carrier; and annealing the at least one recess structure such that at least one... |
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US20150249054 |
SUBSTRATE ALIGNMENT MARK AND FABRICATING METHOD THEREOF, AND SUBSTRATE
A substrate alignment mark and a fabricating method thereof, and a substrate are provided. The substrate alignment mark includes a first alignment mark pattern and a second alignment mark pattern... |
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US20070257288 |
ALIGNMENT MARK FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
An alignment mark for a semiconductor device is provided. The alignment mark defines a plane pattern and includes a conductive layer embedded in a recessed section provided in an insulation layer,... |
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US20070210453 |
Dummy-fill-structure placement for improved device feature location and access for integrated circuit failure analysis
An integrated circuit comprising interconnects located in a layer on a semiconductor substrate. The circuit also comprises dummy-fill-structures located between the interconnects in the layer. The... |
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US20120292789 |
SEMICONDUCTOR WAFER AND METHOD OF PRODUCING THE SAME
Provided is a method of producing a semiconductor wafer. The method includes forming an alignment mark on a base wafer, forming, on the base wafer in a region that includes the alignment mark, an... |
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US20080179761 |
SEMICONDUCTOR PACKAGE HAVING EVAPORATED SYMBOLIZATION
The package (105) of a semiconductor chip has a surface (105a) of optical reflection and color, and is substantially free of indentations; the material of the package may be selected from a group... |
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US20060138681 |
Substrate and lithography process using the same
Provided are substrates, e.g. semiconductor wafers, whereby the front side of the substrate and the back side of the substrate differ in surface roughness. Also provided are lithography processes... |
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US20070176305 |
Alignment mark and overlay inspection mark
An alignment mark is formed on an underlying layer and disposed on a region in which a semiconductor device is not formed. The alignment mark includes a plurality of strip-shaped patterns... |
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US20060220265 |
Alignment mark for semiconductor device, and semiconductor device
An alignment mark for a semiconductor device is provided. The alignment mark defines a plane pattern and includes a conductive layer embedded in a recessed section provided in an insulation layer,... |
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US20050244729 |
Method of measuring the overlay accuracy of a multi-exposure process
A method of measuring the overlay accuracy of a multi-exposure process is provided. The characteristic of this invention is utilizing a scanning electron microscope for monitoring the overlay... |
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US20070108638 |
ALIGNMENT MARK WITH IMPROVED RESISTANCE TO DICING INDUCED CRACKING AND DELAMINATION IN THE SCRIBE REGION
A robust alignment mark used in semiconductor processing to help deter the expansion of cracks and delamination caused by the cutting of a dicing blade. A cross-shaped structure is used as a line... |
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US20070069398 |
Overlay metrology mark
An overlay metrology mark for determining the relative position between two or more layers of an integrated circuit structure comprising a first mark portion associated with and in particular... |
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US20130009328 |
ALIGNMENT MARK, SEMICONDUCTOR HAVING THE ALIGNMENT MARK, AND FABRICATING METHOD OF THE ALIGNMENT MARK
An alignment mark with a sheet or a layer of copper, which is compatible with a copper process, is provided herein. In one embodiment, a whole sheet of copper (Cu) is used as a background of the... |
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US20100052191 |
Metrology Mark with Elements Arranged in a Matrix, Method of Manufacturing Same and Alignment Method
A method of manufacturing an integrated circuit provides a metrology mark (e.g., alignment mark or overlay mark). The method includes forming a first plurality of first structures arranged in a... |
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US20080230929 |
OVERLAY MARK OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE OVERLAY MARK
Provided are an overlay mark of a semiconductor device and a semiconductor device including the overlay mark. The overlay mark includes: reference marks formed in rectangular shapes comprising... |
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US20090127722 |
Method for Processing a Spacer Structure, Method of Manufacturing an Integrated Circuit, Semiconductor Device and Intermediate Structure with at Least One Spacer Structure
Method for processing at least one spacer structure in a manufacturing process of a semiconductor device, wherein the at least one spacer structure is subjected to at least one etch process step... |
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US20070099097 |
Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using same
A mark for use in measuring characteristics of a layer of the semiconductor device includes multiple staggered L-shaped patterns including adjacent vertices, and legs that include line segments... |
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US20070284764 |
Sensing mechanism for crystal orientation indication mark of semiconductor wafer
A sensing mechanism for crystal orientation indication mark of semiconductor wafer is provided. The semiconductor wafer includes: a device region formed on a surface of the semiconductor wafer,... |
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US20050009298 |
Method for manufacturing semiconductor device
For marking a package efficiently at low cost, there is provided a dicing sheet 25 having transfer patterns 28A, 28B and an alignment mark 31 disposed at predetermined positions on a main surface... |
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US20110095410 |
WAFER LEVEL SEMICONDUCTOR DEVICE CONNECTOR
This document discusses, among other things, a semiconductor connector including a conductive pad in a recessed pad area on a surface of a dielectric, the dielectric material configured to be... |
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US20070222088 |
Overlay Metrology Mark
An overlay metrology mark for determining the relative position between two or more layers of an integrated circuit structure comprising a first mark portion associated with and in particular... |
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US20050156335 |
Marks and method for multi-layer alignment
Marks and a method for multi-layer alignment. A first layer with first alignment marks is formed on a semiconductor substrate, wherein the first alignment marks are separated parallelly by a... |
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US20160211219 |
SEMICONDUCTOR DEVICE WITH AT LEAST ONE TRUNCATED CORNER AND/OR SIDE CUT-OUT
A method of producing a substantially rectangular semiconductor device having at least one corner truncation or corner cut-out or side cut-out, comprises: a) providing a semiconductor substrate;... |
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US20110074049 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, MASK AND SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device answerable to refinement of circuits by correctly connecting adjacent small patterns with each other with excellent reproducibility in connective... |
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US20060118974 |
Structure provided on an overlay region, overlay mark having the structure, and method of forming the overlay mark
A structure, which may be provided on an overlay region for an overlay mark, may include a first pattern that may project from a peripheral portion of the overlay region that may be defined on a... |
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US20100001416 |
WAFER LASER-MARKING METHOD AND DIE FABRICATED USING THE SAME
A wafer laser-marking method is provided. First, a wafer having a first surface (an active surface) and a second surface (a back surface) opposite to each other is provided. Next, the wafer is... |
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US20070018341 |
Contact etching utilizing partially recessed hard mask
A method for forming contact holes using a partially recessed hard mask. A substrate with a device region and an alignment region having an opening therein, acting as an alignment mark, is... |
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US20070200259 |
Touch panel
The touch panel of the invention includes an optically transparent upper substrate having an upper conductive layer formed on an undersurface thereof, an optically transparent lower substrate... |
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US20090312981 |
ALIGNMENT MARK AND ALIGNMENT METHOD USING THE ALIGNMENT MARK
An alignment mark structure includes a first pair of first side walls and a second pair of second side walls. The first pair of first side walls faces each other and extends in a first direction.... |
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US20060065985 |
Substrate edge scribe
A substrate that is adapted for the fabrication of integrated circuits, having an improved scribe mark. The scribe mark is small enough to fit within an edge exclusion zone of the substrate, is... |