Matches 1 - 15 out of 15


Match Document Document Title
US20090278260 REDUNDANCY DESIGN WITH ELECTRO-MIGRATION IMMUNITY AND METHOD OF MANUFACTURE  
An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, a design structure of the IC interconnect and a method of manufacture of the IC...
US20090294973 INTERCONNECT STRUCTURE FOR INTEGRATED CIRCUITS HAVING IMPROVED ELECTROMIGRATION CHARACTERISTICS  
An interconnect structure for an integrated circuit (IC) device includes an elongated, electrically conductive line comprising one or more segments formed at a first width, w1, and one or more...
US20080122103 EMBEDDED NANO UV BLOCKING BARRIER FOR IMPROVED RELIABILITY OF COPPER/ULTRA LOW K INTERLEVEL DIELECTRIC ELECTRONIC DEVICES  
An interconnect in provided which comprises a copper conductor having both a top surface and a lower surface, with caps formed on the top surface of the metallic conductor. The cap is formed of...
US20100200993 DIELECTRIC BARRIER LAYER FOR INCREASING ELECTROMIGRATION LIFETIMES IN COPPER INTERCONNECT STRUCTURES  
Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed...
US20050275101 Amorphus TiN  
A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS...
US20080136036 On die signal detector without die power  
In general, in one aspect, the disclosure describes an apparatus having on die circuitry coupled to at least one input port to receive a signal. A resistor is coupled to the on die circuitry and...
US20090014884 SLOTS TO REDUCE ELECTROMIGRATION FAILURE IN BACK END OF LINE STRUCTURE  
A back-end of the line (BEOL) structure and method are disclosed. In one embodiment the BEOL structure may include: a copper line in an ultra low-k dielectric, the copper line connected on one end...
US20070138643 Semiconductor device having metal interconnection structure and method for forming the same  
A method for forming a metal interconnection structure in a semiconductor device is provided. In one embodiment, first and second diffusion barrier layers are sequentially formed, and then an...
US20100224999 Method for Producing Metallic Interconnect Lines  
The invention relates to a method for producing metallic interconnect lines on the surface of a substrate comprising: an etching step for defining trenches within said substrate;a step for filling...
US20090302476 Structures and Methods to Enhance CU Interconnect Electromigration (EM) Performance  
The invention generally relates to semiconductor devices, and more particularly to structures and methods for enhancing electromigration (EM) performance in interconnects. A method includes...
US20080111245 Electric Element, Memory Device, and Semiconductor Integrated Circuit  
An electric element includes a first electrode (1), a second electrode (3), and a variable-resistance film (2) connected between the first electrode (1) and the second electrode (3). The...
US20100224998 Integrated Circuit with Ribtan Interconnects  
An integrated circuit (IC) includes an interconnect system made of electrically conducting ribtan material. The integrated circuit includes a substrate, a set of circuit elements that are formed...
US20170092588 FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE  
A film forming method according to a first embodiment includes a formation step of forming wiring in a groove and/or a hole formed in an insulating film containing fluorine by using wiring metal...
US20160163651 OPTIMIZED WIRES FOR RESISTANCE OR ELECTROMIGRATION  
Optimized metal wires for resistance or electromigration, methods of manufacturing thereof and design methodologies are disclosed. The method includes depositing metal material within openings and...
US20130140701 Solderable Contact and Passivation for Semiconductor Dies  
A silver-containing solderable contact on a semiconductor die has its outer edge spaced from the confronting edge of an epoxy passivation layer so that, after soldering, silver ions are not...

Matches 1 - 15 out of 15