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US20130285245 MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES  
A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the...
US20130062769 Microstructure Modification in Copper Interconnect Structures  
A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the...
US20130221527 METALLIC CAPPED INTERCONNECT STRUCTURE WITH HIGH ELECTROMIGRATION RESISTANCE AND LOW RESISTIVITY  
An interconnect structure including a metallic cap that covers 80 to 99% of the entire surface of an underlying conductive metal feature is provided utilizing a metal reflow process. Laterally...
US20140299988 SELF-FORMING EMBEDDED DIFFUSION BARRIERS  
Interconnect structures containing metal oxide embedded diffusion barriers and methods of forming the same. Interconnect structures may include an Mx level including an Mx metal in an Mx...
US20140084472 COMPOUND DIELECTRIC ANTI-COPPER-DIFFUSION BARRIER LAYER FOR COPPER CONNECTION AND MANUFACTURING METHOD THEREOF  
The disclosure belongs to the field of manufacturing and interconnection of integrated circuits, and in particular relates to compound dielectric anti-copper-diffusion barrier layer for copper...
US20130193575 OPTIMIZATION OF COPPER PLATING THROUGH WAFER VIA  
Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a...
US20140138832 COPPER SEED LAYER FOR AN INTERCONNECT STRUCTURE HAVING A DOPING CONCENTRATION LEVEL GRADIENT  
A trench is opened in a dielectric layer. The trench is then lined with a barrier layer and a metal seed layer. The metal seed layer is non-uniformly doped and exhibits a vertical doping gradient...
US20130299988 GRAPHENE CAP FOR COPPER INTERCONNECT STRUCTURES  
Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of...
US20130270703 ELECTROLESS FILLED CONDUCTIVE STRUCTURES  
Techniques are disclosed that enable interconnects, vias, metal gates, and other conductive features that can be formed through electroless material deposition techniques. In some embodiments, the...
US20130277843 FLIP CHIP MOUNTED MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) STRUCTURE  
A MMIC flip chip mounted to a circuit board having an underfill material disposed between the MMIC and the circuit board and a barrier structure for preventing the underfill material from being...
US20140264878 COPPER INTERCONNECT STRUCTURES AND METHODS OF MAKING SAME  
A structure and method of making the structure. The structure includes a dielectric layer on a substrate; a first wire formed in a first trench in the dielectric layer, a first liner on sidewalls...
US20140124933 COPPER INTERCONNECT STRUCTURES AND METHODS OF MAKING SAME  
A structure and method of making the structure. The structure includes a dielectric layer on a substrate; a first wire formed in a first trench in the dielectric layer, a first liner on sidewalls...
US20150214158 GATE METAL STRUCTURE AND FORMING METHID OF THE SAME  
A gate metal structure and a forming method of the same are provided. The gate metal structure includes: a substrate and a copper metal layer; and a barrier layer disposed between the substrate...
US20150179508 Tantalum-Based Copper Barriers and Methods for Forming the Same  
Embodiments described herein provide tantalum-based copper barriers and methods for forming such barriers. A dielectric body is provided. A first layer is formed above the dielectric body. The...
US20140019716 PLATEABLE DIFFUSION BARRIER TECHNIQUES  
Techniques are disclosed for forming a directly plateable diffusion barrier within an interconnect structure to prevent diffusion of interconnect fill metal into surrounding dielectric material...
US20100295181 REDUNDANT METAL BARRIER STRUCTURE FOR INTERCONNECT APPLICATIONS  
A redundant metal diffusion barrier is provided for an interconnect structure which improves the reliability and extendibility of the interconnect structure. The redundant metal diffusion barrier...
US20140027912 SIDEWALLS OF ELECTROPLATED COPPER INTERCONNECTS  
A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure...
US20140027911 SIDEWALLS OF ELECTROPLATED COPPER INTERCONNECTS  
A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure...
US20130334691 SIDEWALLS OF ELECTROPLATED COPPER INTERCONNECTS  
A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure...
US20140197537 Void-Free Metallic Filled High Aspect Ratio Openings  
One embodiment is a device which includes at least one filled via or trench wherein the at least one filled via or trench includes void-free filled metal or alloy, and the filled via or trench has...
US20100038784 REDUNDANT BARRIER STRUCTURE FOR INTERCONNECT AND WIRING APPLICATIONS, DESIGN STRUCTURE AND METHOD OF MANUFACTURE  
A redundant diffusion barrier structure and method of fabricated is provided for interconnect and wiring applications. The structure can also be a design structure. The structure includes a first...
US20140110844 WIRE BONDABLE SURFACE FOR MICROELECTRONIC DEVICES  
The present invention concerns thin diffusion barriers in metal and metal alloy layer sequences of contact area/barrier layer/first bonding layer type for metal wire bonding applications. The...
US20100038783 METAL CAP FOR BACK END OF LINE (BEOL) INTERCONNECTS, DESIGN STRUCTURE AND METHOD OF MANUFACTURE  
A structure is provided with a metal cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing the...
US20150262976 SUBSTRATE BONDING WITH DIFFUSION BARRIER STRUCTURES  
A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer...
US20140353828 SUBSTRATE BONDING WITH DIFFUSION BARRIER STRUCTURES  
A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer...
US20110006430 COPPER DIFFUSION BARRIER  
The invention concerns a method of forming a copper portion surrounded by an insulating material in an integrated circuit structure, the insulating material being a first oxide, the method having...
US20150255397 DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING  
A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy...
US20140061914 DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING  
A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy...
US20110062587 LARGE GRAIN SIZE CONDUCTIVE STRUCTURE FOR NARROW INTERCONNECT OPENINGS  
An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material...
US20090206484 MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE  
Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a...
US20140061918 METHOD OF FORMING LOW RESISTIVITY TaNx/Ta DIFFUSION BARRIERS FOR BACKEND INTERCONNECTS  
The present disclosure relates diffusion barrier layers for backend layers for interconnects and their methods of manufacturing. A TaNx/Ta diffusion barrier layer used for backend interconnect is...
US20140035143 METHOD OF REDUCING CONTACT RESISTANCE OF A METAL  
A structure for an integrated circuit with reduced contact resistance is disclosed. The structure includes a substrate, a cap layer deposited on the substrate, a dielectric layer deposited on the...
US20070169689 Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal  
A seed crystal is formed of a rod-like aluminum nitride single crystal whose length direction is oriented to the c-axis direction. Exposed surface on the side portion thereof on which an aluminum...
US20110101529 BARRIER LAYER FOR COPPER INTERCONNECT  
A copper interconnect includes a copper layer formed in a dielectric layer. A glue layer is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary...
US20070023914 Electromigration resistant metallurgy device and method  
Devices and methods are described including a conducting pathway with improved electromigration properties. The conducting pathway can be used in integrated circuits and semiconductor chips for...
US20140021611 Novel Copper Etch Scheme for Copper Interconnect Structure  
The present disclosure is directed to a method of manufacturing an interconnect structure in which a low-k dielectric layer is formed over a semiconductor substrate followed by formation of a...
US20150076697 DUMMY BARRIER LAYER FEATURES FOR PATTERNING OF SPARSELY DISTRIBUTED METAL FEATURES ON THE BARRIER WITH CMP  
A semiconductor device comprises a plurality of device features formed on a substrate and a plurality of dummy features formed on the substrate and across an open region between the device...
US20140264874 Electro-Migration Barrier for Cu Interconnect  
Integrated circuit devices and method of forming them. The devices include a dielectric barrier layer formed over a copper-containing metal interconnect structure. The dielectric barrier layer...
US20100320607 INTERCONNECT STRUCTURES WITH A METAL NITRIDE DIFFUSION BARRIER CONTAINING RUTHENIUM  
A method for forming an interconnect structure for copper metallization and an interconnect structure containing a metal nitride diffusion barrier are described. The method includes providing a...
US20110233780 COBALT NITRIDE LAYERS FOR COPPER INTERCONNECTS AND METHODS FOR FORMING THEM  
An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a...
US20150228585 SELF-FORMING BARRIER INTEGRATED WITH SELF-ALIGNED CAP  
A method of forming a self-forming barrier with an integrated self-aligned metal cap, wherein the barrier is formed on all surfaces of the via, and the resulting device are provided. Embodiments...
US20100155951 Copper interconnection structure and method for forming copper interconnections  
A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed...
US20140252625 Method of Preventing a Pattern Collapse  
A device includes a substrate and at least three conducting features embedded into the substrate. Each conducting feature includes a top width x and a bottom width y, such that a top and bottom...
US20120261823 INTERCONNECT STRUCTURES WITH ENGINEERED DIELECTRICS WITH NANOCOLUMNAR POROSITY  
A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and...
US20130228925 HYBRID INTERCONNECT STRUCTURE FOR PERFORMANCE IMPROVEMENT AND RELIABILITY ENHANCEMENT  
A hybrid interconnect structure is provided that includes a dielectric material having a conductive material embedded within at least one opening in the dielectric material, wherein the conductive...
US20140027822 Copper Contact Plugs with Barrier Layers  
A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An...
US20140319685 Hybrid Graphene-Metal Interconnect Structures  
Hybrid metal-graphene interconnect structures and methods of forming the same. The structure may include a first end metal, a second end metal, a conductive line including one or more graphene...
US20140061919 Electroplated Metallic Interconnects And Products  
One embodiment of the present invention is a device including at least a portion of a void-free electroplated metallic interconnect embedded in an opening, said opening having sidewalls, said...
US20110254164 SELF-ALIGNED BARRIER LAYERS FOR INTERCONNECTS  
An interconnect structure for integrated circuits incorporates manganese silicate and manganese silicon nitride layers that completely surrounds copper wires in integrated circuits and methods for...
US20120273951 Contact Metal for Hybridization and Related Methods  
A contact structure for interconnecting a first substrate to an indium interconnect structure on a second substrate. The contact structure comprises a diffusive layer and a non-oxidizing layer,...