Matches 1 - 49 out of 49


Match Document Document Title
US20110089518 Array of concentric CMOS photodiodes for detection and de-multiplexing of spatially modulated optical channels  
An octagonal structure of photodiodes using standard CMOS technology has been developed to serve as a de-multiplexer for spatially multiplexed fiber optic communication systems.
US20110101473 Junction deveice  
This invention relates to a junction device, especially a p-n junction device. This invention also relates to a backward current decoupler which is also a good sensor. An induced backward current...
US20050224917 Junction diode  
A junction diode comprising a first conductive type substrate, a second conductive type embedded region, a second conductive type well, a first conductive type doped region and a second conductive...
US20080273280 Carbon Nanotube Diodes And Electrostatic Discharge Circuits And Methods  
Diodes and method of fabricating diodes. A diode includes: an p-type single wall carbon nanotube; an n-type single wall carbon nanotube, the p-type single wall carbon nanotube in physical and...
US20050051908 Diode exhibiting a high breakdown voltage  
A diode exhibiting a high reverse breakdown voltage is manufactured by employing a flame-resisting epoxy resin, the extract of which when extracted under predetermined conditions exhibits...
US20110121423 Concentric Ring Mask for Controlling The Shape of a Planar PN Junction  
A mask for use in making a planar PN junction in a semiconductor device includes a central mask opening and a plurality of spaced apart concentric mask openings surrounding the central mask...
US20110162687 ORGANIC PHOTOVOLTAIC CELL AND LIGHT EMITTING DIODE WITH AN ARRAY OF 3-DIMENSIONALLY FABRICATED ELECTRODES  
Disclosed herein, in certain instances, is a novel photovoltaic cell that uses unique microarchitectural and multi-layer functional designs. Further disclosed herein, in certain instances, is a...
US20120223421 DOUBLE TRENCH RECTIFIER  
A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase...
US20110068439 DOUBLE TRENCH RECTIFIER  
A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase...
US20100155911 ESD Protection Diode in RF pads  
A diode is provided. The diode includes first and second diffusion layers formed in a substrate, a first metal coupled to the first diffusion layer, and a second metal coupled to the second...
US20090230516 PIN Diode with Improved Power Limiting  
A PIN diode comprising an N-type substrate comprising a cathode of the PIN diode and having an intrinsic layer disposed upon the N-type substrate and having a top surface a P-type material...
US20140124903 STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PROCESSES  
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a...
US20110049683 STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PROCESSES  
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a...
US20100102419 Epitaxy-Level Packaging (ELP) System  
An epitaxy-level packaging grows an epitaxial film and transfers it to an assembly substrate. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed...
US20060145307 High aspect-ratio PN-junction and method for manufacturing the same  
A semiconductor device having high-aspect-ratio PN-junctions is provided. The semiconductor device includes a conducting layer. The semiconductor device further includes a plurality of first doped...
US20090179309 Power semiconductor component with trench- type second contact region  
A power semiconductor component and method for producing it. The component has a semiconductor base body with a first doping and a pn junction formed by a contact region having a second doping...
US20120248584 NANO/MICRO-SIZED DIODE AND METHOD OF PREPARING THE SAME  
A nano/micro-sized diode and a method of preparing the same, the diode including: a first electrode; a second electrode; and a diode layer that is disposed between the first electrode and the...
US20150249173 METHOD FOR MANUFACTURING A MONOLITHIC SILICON WAFER COMPRISING MULTIPLE VERTICAL JUNCTIONS  
The present invention relates to a method for manufacturing a monolithic silicon wafer (10) comprising multiple vertical junctions (2) having an alternation of n-doped areas and p-doped areas,...
US20120261804 VERTICAL SUBSTRATE DIODE, METHOD OF MANUFACTURE AND DESIGN STRUCTURE  
A diode structure, formed under a buried dielectric layer of a silicon on insulator (SOI), method of manufacturing the same and design structure thereof are provided. In an embodiment the p-n...
US20110089391 PUNCH-THROUGH DIODE STEERING ELEMENT  
A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The...
US20090212292 Layer-selective laser ablation patterning  
A method of fabricating an organic electronic device is provided. The organic electronic device has a structure including an upper conductive layer and an underlying layer immediately beneath said...
US20080036047 Low voltage transient voltage suppressor with reduced breakdown voltage  
A semiconductor junction device includes a substrate of low resistivity semiconductor material having a preselected polarity. A tapered recess extends into the substrate and tapers inward as it...
US20100193895 DEPLETABLE CATHODE LOW CHARGE STORAGE DIODE  
An integrated circuit device comprising a diode and a method of making an integrated circuit device comprising a diode are provided. The diode can comprise an island of a first conductivity type,...
US20110215416 CARBON NANOTUBE N-DOPING MATERIAL, CARBON NANOTUBE N-DOPING METHOD AND DEVICE USING THE SAME  
Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have...
US20130009125 LOW RESISTANCE SEMICONDUCTOR DEVICE  
A semiconductor device includes an insulation layer including a cell contact hole, and a switching device in the cell contact hole, at least a part of a top surface of the switching device being...
US20130328120 SEMICONDUCTOR DEVICE  
A device comprises a substrate, an n-layer and a p-layer, an n-electrode, and a p-electrode. A step is formed at an outer circumference of the device. A protective film is formed so as to...
US20100230715 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE  
A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is...
US20100117162 Semiconductor Body and Method for the Design of a Semiconductor Body with a Connecting Line  
A semiconductor body (1) comprises a connecting lead (21) for contacting a semiconductor area (2). The conductivity S per unit length of the connecting lead (21) changes from a first value SW to a...
US20100052116 FABRICATION OF SELF-ASSEMBLED NANOWIRE-TYPE INTERCONNECTS ON A SEMICONDUCTOR DEVICE  
The present invention relates to a semiconductor device with nanowire-type interconnect elements and a method for fabricating the same. The device comprises a metal structure with at least one...
US20170084685 SEMICONDUCTOR DEVICE  
A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well of type one; a well of type two,...
US20160379924 EFFICIENT LAYOUT PLACEMENT OF A DIODE  
A semiconductor device includes a plurality of first wires and a plurality of second wires. Each of the first wires forms a closed polygon and surrounds a center. Each of the second wires is...
US20160300960 DIODE AND METHOD OF MANUFACTURING DIODE  
A diode is provided with a semiconductor substrate; an anode electrode located on a front surface of the semiconductor substrate; and a cathode electrode located on a rear surface of the...
US20160284687 ULTRA HIGH VOLTAGE ELECTROSTATIC DISCHARGE PROTECTION DEVICE WITH CURRENT GAIN  
A semiconductor device includes a semiconductor substrate. A first semiconductor region is over a portion of the semiconductor substrate to a first depth. A second semiconductor region is in the...
US20160148992 SEMICONDUCTOR DEVICE  
A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well of type one; a well of type two,...
US20160099315 NANOTUBE SEMICONDUCTOR DEVICES  
Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first epitaxial...
US20160093694 METHODS AND APPARATUSES INCLUDING AN ACTIVE AREA OF A TAP INTERSECTED BY A BOUNDARY OF A WELL  
Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A...
US20160079441 High Frequency Power Diode and Method for Manufacturing the Same  
High frequency power diode including a semiconductor wafer having first and second main sides, a first layer of a first conductivity type formed on the first main side, a second layer of a second...
US20160035716 STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PROCESSES  
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a...
US20150357680 Device and Method for Bridging an Electrical Energy Storage  
A semiconductor substrate has a first doping region arranged at a surface and a second doping region adjacent to the first doping region. A p-n junction between the doping regions is at least...
US20150349055 SEMICONDUCTOR DEVICE  
An element isolation trench is formed in a substrate and is formed along each side of a polygon in a planar view. A first trench is formed in the substrate and extends in a direction different...
US20140327118 POWER SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF  
A method of fabricating a power semiconductor device includes the following steps. Firstly, a substrate is provided. A first epitaxial layer is formed over the substrate. A first trench is formed...
US20140246762 SEMICONDUCTOR DEVICE HAVING DEEP WELLS AND FABRICATION METHOD THEREOF  
Semiconductor devices and methods of fabricating the same are provided. An insulating film can be disposed on a semiconductor substrate, and insulating film patterns can be formed opening a...
US20140246761 FAST RECOVERY SWITCHING DIODE WITH CARRIER STORAGE AREA  
A power device (such as a power diode) has a peripheral die area and a central area. The main PN junction of the device is formed by a P+ type region that extends down into an N− type layer. The...
US20140061874 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME  
An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the...
US20120313212 SEMICONDUCTOR DEVICE  
A semiconductor device includes a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than that of silicon; a first layer selectively disposed...
US20120133031 FABRICATION OF SELF-ASSEMBLED NANOWIRE-TYPE INTERCONNECTS ON A SEMICONDUCTOR DEVICE  
Consistent with an example embodiment, there is a semiconductor device with nanowire-type interconnect elements. The semiconductor device comprises a semiconductor substrate with a pn junction...
US20120032312 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE  
A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The...
US20110227025 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SAME  
According to one embodiment, a semiconductor memory device includes a word line interconnection layer, a bit line interconnection layer and a pillar. The word line interconnection layer includes a...
US20100295105 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a...

Matches 1 - 49 out of 49