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US20060267146 Multilayered emitter window for bipolar junction transistor  
An emitter window for a bipolar junction transistor includes a first emitter window layer adjacent to and in contact with a base region, a second emitter window layer adjacent to and in contact...
US20130285121 BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING SPIKE  
This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface...
US20080048296 VERTICAL BJT, MANUFACTURING METHOD THEREOF  
A vertical BJT which has a maximal current gain for a photodiode area. According to embodiments, since the BJT can be formed together with the photodiode, and collector current flows up and down...
US20120049326 High holding voltage BJT clamp with embedded reverse path protection in BCD process  
In the case of adjacent high voltage nodes in which one node is protected by a lateral BJT clamp, the irreversible burnout due to transient latch-up between the two adjacent high voltage pins of...
US20100327280 SCALING OF BIPOLAR TRANSISTORS  
Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor...
US20140266393 BIPOLAR TRANSISTOR WITH LOWERED 1/F NOISE  
In a bipolar transistor, a thin gate oxide, preferably less than 600 Å, is formed over the base surface region between the emitter and collector. A conductive gate, such as doped polysilicon, is...
US20130214847 VERTICALLY BASE-CONNECTED BIPOLAR TRANSISTOR  
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the...
US20110006341 ESD PROTECTION ELEMENT  
An electrostatic discharge (ESD) protection element using an NPN bipolar transistor, includes: a trigger element connected at one end with a pad. The NPN bipolar transistor includes: a first base...
US20140210051 METHOD FOR IMPLEMENTING DEEP TRENCH ENABLED HIGH CURRENT CAPABLE BIPOLAR TRANSISTOR FOR CURRENT SWITCHING AND OUTPUT DRIVER APPLICATIONS  
A method and structures are provided for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications. A deep oxygen implant is...
US20120068309 Transistor and Method of Manufacturing a Transistor  
In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger...
US20130075746 Lateral PNP Bipolar Transistor with Narrow Trench Emitter  
A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter efficiency. The same trench process is used to...
US20140084420 METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY IN BICMOS TECHNOLOGY  
A method of forming a heterojunction bipolar transistor. The method includes providing a structure comprising at least an intrinsic base region and an emitter pedestal region. A stack is formed on...
US20120168908 SPACER FORMATION IN THE FABRICATION OF PLANAR BIPOLAR TRANSISTORS  
A bipolar transistor is fabricated having a collector (52) in a substrate (1) and a base (57, 58) and an emitter (59) formed over the substrate. The base has a stack region (57) which is laterally...
US20120098096 BIPOLAR TRANSISTOR  
A bipolar transistor comprises at least first and second connected emitter-base (EB) junctions having, respectively, different first and second EB junction depths, and a buried layer (BL)...
US20130228868 ELECTROSTATIC DISCHARGE PROTECTION DEVICES  
A semiconductor device for electrostatic discharge (ESD) protection including a source, a gate, a drain having a drain diffusion, and a diffusion region extending from, or located under, the drain...
US20140021587 LOCAL WIRING FOR A BIPOLAR JUNCTION TRANSISTOR INCLUDING A SELF-ALIGNED EMITTER REGION  
Aspects of the invention provide for a bipolar transistor of a self-aligned emitter. In one embodiment, the invention provides a method of forming local wiring for a bipolar transistor with a...
US20090250721 ELECTRICAL SURGE PROTECTIVE APPARATUS  
Disclosed is an electrical surge protective apparatus comprising: a base region containing impurities of a first conductivity type; a first semiconductor region containing impurities of a second...
US20080246023 Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions  
The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a...
US20060226513 Elimination of low frequency oscillations in semiconductor circuitry  
Low frequency oscillations in a circuit are eliminated. A sub-collector region is formed over a semi-insulator region. Bipolar transistor circuitry is formed over the sub-collector region. The...
US20140332927 SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING ISOLATION RAISED BASE STRUCTURES  
A collector region is formed between insulating shallow trench isolation regions within a substrate. A base material is epitaxially grown on the collector region and the shallow trench isolation...
US20070051980 SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)  
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried...
US20070215979 Heterojunction bipolar transistor and fabrication method of the same  
A SiGe-HBT having a base region made of SiGe mixed crystal. The base region includes: an intrinsic base region having junctions with a collector region and an emitter region; and an external base...
US20130075741 Lateral PNP Bipolar Transistor Formed with Multiple Epitaxial Layers  
A lateral bipolar transistor with deep emitter and deep collector regions is formed using multiple epitaxial layers of the same conductivity type. Deep emitter and deep collector regions are...
US20130207236 HIGH-BETA BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURE  
An NPN bipolar junction transistor is disclosed that exhibits a collector-to-emitter breakdown voltage greater than 10 volts and a beta greater than 300. The large value of beta is obtained by...
US20140217551 TRENCH ISOLATION FOR BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY  
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region. A...
US20070222032 Bipolar transistor and method for producing a bipolar transistor  
A bipolar transistor has a base, an emitter and an emitter contact. The emitter has a monocrystalline layer and a polycrystalline layer, which are disposed between the base and the emitter contact...
US20110140239 High Voltage Bipolar Transistor with Pseudo Buried Layers  
A high voltage bipolar transistor with shallow trench isolation (STI) comprises the areas of a collector formed by implanting first electric type impurities into active area and connected with...
US20070145412 HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF  
The object of the present invention is to provide a heterojunction bipolar transistor with high breakdown tolerance which can be manufactured at a high reproducibility and a high yield, the...
US20100320571 BIPOLAR TRANSISTOR STRUCTURE AND METHOD INCLUDING EMITTER-BASE INTERFACE IMPURITY  
A bipolar transistor structure and a method for fabricating the bipolar transistor structure include: (1) a collector structure located at least in-part within a semiconductor substrate; (2) a...
US20140054747 BIPOLAR TRANSISTOR  
A bipolar transistor having an upper surface, comprises a multilevel collector structure formed in a base region of opposite conductivity type and having a first part of a first vertical extent...
US20140131837 GAN VERTICAL BIPOLAR TRANSISTOR  
An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface...
US20150021738 BIPOLAR JUNCTION TRANSISTORS WITH AN AIR GAP IN THE SHALLOW TRENCH ISOLATION  
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A trench isolation region is formed in a substrate. The trench isolation region is coextensive with...
US20130249057 SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH AN IMPROVED BREAKDOWN VOLTAGE-CUTOFF FREQUENCY PRODUCT  
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with...
US20050189617 Bipolar transistor having multiple interceptors  
A bipolar transistor includes: a base having a first conductive type; an emitter having a second conductive type; a collector having the second conductive type; and a plurality of interceptors for...
US20140003000 BIPOLAR TRANSISTOR ON HIGH-RESISTIVITY SUBSTRATE  
Systems and methods are disclosed for processing radio frequency (RF) signals using one or more bipolar transistors disposed on or above a high-resistivity region of a substrate. The substrate may...
US20050184361 Vertical bipolar transistor and method of manufacturing the same  
A vertical bipolar transistor comprises P-type semiconductor substrate, N-type first well provided in the semiconductor substrate and operating as a collector, P-type second well provided on the...
US20080290463 LATERAL BIPOLAR TRANSISTOR AND METHOD OF PRODUCTION  
Emitter and collector regions of the bipolar transistor are formed by doped regions of the same type of conductivity, which are separated by doped semiconductor material of an opposite type of...
US20060163696 Metal base transistor and oscillator using the same  
The most important task in realizing a downsized and low cost THz band spectroscopic and fluoroscopic instrument is to achieve downsizing and cost reduction of oscillators used in the instrument....
US20130147017 BIPOLAR JUNCTION TRANSISTORS WITH A LINK REGION CONNECTING THE INTRINSIC AND EXTRINSIC BASES  
Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor...
US20130009280 BIPOLAR JUNCTION TRANSISTORS WITH A LINK REGION CONNECTING THE INTRINSIC AND EXTRINSIC BASES  
Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor...
US20150041956 ISOLATION SCHEME FOR BIPOLAR TRANSISTORS IN BICMOS TECHNOLOGY  
Device structures and design structures for a bipolar junction transistor. The device structure includes a collector region in a substrate, a plurality of isolation structures extending into the...
US20140151852 BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE  
Fabrication methods, device structures, and design structures for a bipolar junction transistor. The device structure includes a collector region, an intrinsic base formed on the collector region,...
US20130334664 INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR  
Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked...
US20080308903 POLYCRYSTALLINE THIN FILM BIPOLAR TRANSISTORS  
A semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material...
US20150008561 BIPOLAR TRANSISTOR HAVING SINKER DIFFUSION UNDER A TRENCH  
A bipolar transistor includes a substrate having a semiconductor surface, a first trench enclosure and a second trench enclosure outside the first trench enclosure both at least lined with a...
US20090200641 Semiconductor device and method of manufacturing the same  
The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of,...
US20080150082 POWER TRANSISTOR FEATURING A DOUBLE-SIDED FEED DESIGN AND METHOD OF MAKING THE SAME  
A power transistor (210) comprises a plurality of unit cell devices (212), a base contact configuration, an emitter contact configuration, and a collector contact configuration. The plurality of...
US20120119330 Adjustable Holding Voltage ESD Protection Device  
An electrostatic discharge (ESD) protection structure comprises a bipolar PNP transistor having an emitter formed by a first high voltage P type implanted region disposed underneath a first P+...
US20100237388 HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR  
A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power...
US20110012232 BIPOLAR TRANSISTOR  
An improved device (20) is provided, comprising, merged vertical (251) and lateral transistors (252), comprising thin collector regions (34) of a first conductivity type sandwiched between upper...

Matches 1 - 50 out of 175 1 2 3 4 >