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US20060226487 Resistor with reduced leakage  
A resistor 100 is formed in a semiconductor layer 106, e.g., a silicon layer on an SOI substrate. A body region 108 is formed in a portion of the semiconductor layer 106 and is doped to a first...
US20100065836 RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME  
A resistive memory device includes an insulation layer over a substrate, a nanowire penetrating the insulation layer, a resistive layer formed over the insulation layer and contacting with the...
US20090134431 NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS AND METHOD OF MANUFACTURING THE SAME  
A nonvolatile semiconductor storage apparatus includes: a plurality of first wirings; a plurality of second wirings which cross the plurality of first wirings; and a memory cell which is connected...
US20060175679 Semiconductor device and method for manufacturing the same  
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active...
US20060138467 Method of forming a small contact in phase-change memory and a memory cell produced by the method  
A method of fabricating a phase-change memory cell is described. The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a width and an exposed...
US20090302315 Resistive random access memory  
A resistive random access memory (RRAM) includes a switch region formed of a material having bi-polar properties; and a memory resistor formed of a material having uni-polar properties. The RRAM...
US20060081961 Variable resistance device and a semiconductor apparatus, including a variable resistance layer made of a material with a perovskite structure  
The present invention offers a variable resistance device and a semiconductor apparatus that have component parts less subject to damage and thereby ensure stable quality at a high yield, even if...
US20100065900 SEMICONDUCTOR DEVICE INCLUDING RESISTANCE ELEMENT  
A semiconductor device includes a resistance element. The resistance element includes a first and second conductive films, second insulating film, and contact plugs. The first conductive film is...
US20090236689 INTEGRATED PASSIVE DEVICE AND METHOD WITH LOW COST SUBSTRATE  
According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (72), is provided. An insulating initial dielectric layer...
US20060207972 Method for realizing microchannels in an integrated structure  
A process is presented for realizing buried microchannels in an integrated structure comprising a monocrystalline silicon substrate. The process forms in the substrate at least one trench. A...
US20130214387 CHIP STRUCTURE WITH A PASSIVE DEVICE AND METHOD FOR FORMING THE SAME  
The present disclosure provides a method for forming a chip structure with a resistor. A semiconductor substrate is provided and has a surface. A plurality of electronic devices and a resistor is...
US20080169507 DISCRETE ON-CHIP SOI RESISTORS  
A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At...
US20060081962 Variable resistance device made of a material which has an electric resistance value changing in accordance with an applied electric field and maintains the electric resistance value after being changed in a nonvolatile manner, and a semiconductor apparatus including the same  
The variable resistance device of the present invention comprises a variable resistance layer. The variable resistance layer is made of a material which has an electric resistance changing in...
US20080048293 SEMICONDUCTOR DEVICE HAVING HEATING STRUCTURE AND METHOD OF FORMING THE SAME  
A semiconductor device includes a lower electrode including a bottom wall portion and a sidewall portion extending upwardly from the bottom wall portion, and an insulating layer located over a top...
US20060125049 Resistive structure integrated in a semiconductor substrate  
A resistive structure integrated in a semiconductor substrate and having a suitably doped polysilicon region that is completely surrounded by a dielectric region so that the resistive structure is...
US20100252909 Three-Dimensional Memory Devices  
An integrated circuit memory device may include a semiconductor substrate and a plurality of word-line layers wherein adjacent word-line layers are separated by respective word-line insulating...
US20110316117 DIE PACKAGE AND A METHOD FOR MANUFACTURING THE DIE PACKAGE  
A die package and a method for manufacturing the die package are provided. The die package includes a second die arranged above a first die, the first die comprising an interconnect region on a...
US20110163418 Mounting structures for integrated circuit modules  
A structure of an integrated circuit module includes a wiring board, a plurality of integrated circuits and at least one terminating resistance circuit. The wiring board has a mounting region on...
US20080185687 MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A memory device includes a lower electrode layer formed over a substrate, a resistance layer including a metal nitride layer formed over the lower electrode layer, and an upper electrode layer...
US20050236691 Semiconductor device and manufacturing method for the same  
A manufacturing method for a semiconductor device that includes a crystal of metal-insulator phase transition material as a resistor, the method having the steps of forming an electrode on a...
US20080048294 Semiconductor device with guard ring  
A semiconductor device includes a semiconductor substrate; a circuit; a guard ring; a power source line; and a contact. The semiconductor substrate has a first conductive type. The circuit is...
US20090014837 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
The present invention relates to a semiconductor device and a method of manufacturing the same. A high-resistance silicon wafer is manufactured in such a manner that a large-sized silicon wafer...
US20110062554 HIGH VOLTAGE FLOATING WELL IN A SILICON DIE  
In one embodiment, a graded n-doped region surrounding a well, and a spiral resistor connected to the well and to a p-doped region surrounding the graded n-doped region.
US20080012079 Memory cell having active region sized for low reset current and method of fabricating such memory cells  
A method of fabricating memory cells on a wafer includes forming cavities in a dielectric layer, where each of the cavities includes at least one corner. The method additionally includes...
US20120292740 HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A HIGH VOLTAGE RESISTANCE SEMICONDUCTOR DEVICE  
A semiconductor device comprises a semiconductor substrate, a lateral semiconductor diode, a field insulation structure, and a polysilicon resistor. The diode is formed in a surface region of the...
US20090174032 RESISTANCE CHANGE MEMORY DEVICE  
A resistance change memory device includes: a semiconductor substrate; a three dimensional cell array formed by a plurality of unit cell array blocks of two dimensional arrangement on the...
US20090101994 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate having an active region and a device isolation region...
US20050062131 A1/A1Ox/A1 resistor process for integrated circuits  
A structure and a method for forming a vertical resistor on a superconducting integrated circuit. The resistance structure is formed from a Al/AlOx/Al material system. In particular, the...
US20080217740 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
An object of the invention is to provide a resistor element whose contact area is self-alignedly formed to reduce the contact area size and contact resistance variation and which can be formed...
US20080272461 Capture of residual refractory metal within semiconductor device  
There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals,...
US20130154058 HIGH SURFACE AREA FILLER FOR USE IN CONFORMAL COATING COMPOSITIONS  
A high surface area filler, a conformal coating composition, and an apparatus. The high surface area filler comprises an amorphous silicon dioxide powder and a phosphine compound bonded to the...
US20100308436 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
The present invention provides a semiconductor device including a resistor which achieves reduction of a chip size and variations in resistance value, and a manufacturing method thereof. The...
US20140197520 RESISTOR AND RESISTOR FABRICATION FOR SEMICONDUCTOR DEVICES  
In a particular embodiment, a method includes removing a first portion of an optical planarization layer using a lithographic mask to expose a region of the optical planarization layer. A...
US20090108399 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCORPORATING FUSE ELEMENTS  
An apparatus and a method for manufacturing semiconductor devices is disclosed for selectively disconnecting a fuse element out of plural fuse elements formed on a semiconductor wafer substrate...
US20050161767 Semiconductor device and manufacturing method thereof  
Junction leakage in a diffused resistor having a silicide structure is prevented. A titanium layer is formed by sputtering titanium over an entire surface of a semiconductor substrate. A P+-type...
US20140159180 SEMICONDUCTOR RESISTOR STRUCTURE AND SEMICONDUCTOR PHOTOMULTIPLIER DEVICE  
According to embodiments of the present invention, a semiconductor resistor structure is provided. The semiconductor resistor structure includes a substrate, a first region of a first conductivity...
US20090278189 SEMICONDUCTOR DEVICE WITH RESISTOR AND METHOD OF FABRICATING SAME  
A semiconductor device includes a cell array region disposed on a semiconductor substrate and comprising a first cell gate pattern, a cell semiconductor pattern disposed on the first cell gate...
US20070096255 HIGH RESISTANCE CMOS RESISTOR  
A high resistance CMOS resistor with a relatively small die size is provided. The CMOS resistor includes a p-field region disposed in a n-well of a substrate and a pair of p-type contact regions...
US20070187800 RESISTOR TUNING  
A structure for resistors and the method for tuning the same. The resistor comprises an electrically conducting region coupled to a liner region. Both the electrically conducting region and the...
US20130221487 METHOD OF FORMING RESISTOR OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREOF  
A resistor in a semiconductor memory device is formed by the steps of, inter alia: forming a first helical resistor extending from a first point toward a center in a clockwise or counterclockwise...
US20150255442 POWER SEMICONDUCTOR MODULE  
According to one embodiment, a power semiconductor module includes a substrate, a first interconnection layer, semiconductor elements, and a rectifier element. The first interconnection layer is...
US20070176260 Active area resistors and methods for making the same  
Resistors used with a semiconductor device may include resistors defined by patterned layers of polysilicon or metal defining diffusion regions within patterns of the patterned layers such that...
US20060138559 Flash memories having at least one resistance pattern on gate pattern and methods of fabricating the same  
Flash memories and methods of manufacturing the same provide at least one resistance pattern on a gate pattern, and are capable of increasing a process margin in the semiconductor fabrication...
US20100258909 Longitudinal link trimming and method for increased link resistance and reliability  
A resistor (14) and a resistive link (1,15) are provided in an integrated circuit structure, and a dielectric layer (30-2) is formed over the resistive link. The resistor and the resistive link...
US20070080427 Semiconductor device  
A semiconductor device includes semiconductor substrate, a plurality of element forming regions formed on the semiconductor substrate, and an interconnect for connecting the plurality of element...
US20060202304 Integrated circuit with temperature-controlled component  
An integrated circuit has a circuit component and a heating component thermally coupled together in a region thermally isolated from other parts of the integrated circuit. The thermal isolation...
US20090184395 INPUT/OUTPUT (I/O) BUFFER  
An I/O buffer including an I/O circuit, a pad and a pulling resistant device. The I/O circuit is for inputting or outputting a signal. The pulling resistant device has a plurality of resistant...
US20080036036 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
To easily obtain a resistance element with an adjustable resistance value, wherein the resistance value is within 1% or less of a desired design value, having a low parasitic capacitance and which...
US20120205778 PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME  
The present invention relates to a package structure and method for manufacturing the same. The package structure can minimize the area of the circuit board used for packaging, by stacking a...
US20100289121 Chip-Level Access Control via Radioisotope Doping  
A mechanism for changing the doping profile of semiconductor devices over time using radioisotope dopants is disclosed. This mechanism can be used to activate or deactivate a device based on the...

Matches 1 - 50 out of 52 1 2 >