Matches 1 - 50 out of 164 1 2 3 4 >


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US20050285222 New fuse structure  
An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via...
US20070114635 Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same  
Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and...
US20100264514 SEMICONDUCTOR DEVICE AND A METHOD OF INCREASING A RESISTANCE VALUE OF AN ELECTRIC FUSE  
Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An...
US20090146251 SEMICONDUCTOR DEVICE  
The semiconductor device of the present invention comprises a semiconductor substrate; and a conductive element formed on the semiconductor substrate and capable of being opened when a...
US20100090751 Electrical Fuse Structure and Method  
An electrical fuse and a process of programming the same are presented. An electrical fuse comprises a lower level silicide layer on a non-doped or lightly-doped polysilicon layer, an upper level...
US20070164394 Semiconductor device  
On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed...
US20120267755 SEMICONDUCTOR DEVICE WITH ELECTRIC FUSE HAVING A FLOWING-OUT REGION  
A method for cutting an electric fuse formed on a semiconductor substrate by applying a predetermined electric voltage between a first interconnect and a second interconnect to flow an electric...
US20050087836 Electrically programmable polysilicon fuse with multiple level resistance and programming  
A method to form a programmable resistor device in an integrated circuit device is achieved. The method comprises depositing a semiconductor layer overlying a substrate. The semiconductor layer is...
US20080023789 REPROGRAMMABLE ELECTRICAL FUSE  
The present invention provides a reprogrammable electrically blowable fuse. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse...
US20070090486 Fuse and method for disconnecting the fuse  
The fuse comprises an interconnection part 14 luding a silicon layer; a contact part 20b connected one end of the interconnection part 14; and a contact part 20aconnected to the other end of the...
US20090179302 PROGRAMMABLE ELECTRONIC FUSE  
A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material...
US20090243032 ELECTRICAL FUSE STRUCTURE  
An e-fuse structure includes a cathode block; a plurality of cathode contact plugs on the cathode block; an anode block; a plurality of anode contact plugs on the cathode block; and a fuse link...
US20060138467 Method of forming a small contact in phase-change memory and a memory cell produced by the method  
A method of fabricating a phase-change memory cell is described. The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a width and an exposed...
US20170033046 Electrical Device and Fabrication Method  
An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second...
US20140021559 SEMICONDUCTOR DEVICE AND A METHOD OF INCREASING A RESISTANCE VALUE OF AN ELECTRIC FUSE  
Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An...
US20100133651 SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LATERALLY SPACED LASER BEAM SPOTS WITH JOINT VELOCITY PROFILING  
A method is used in processing structures on or within a semiconductor substrate using N series of laser pulses to obtain a throughput benefit, wherein N≧2. The structures are arranged in a...
US20080277756 ELECTRONIC DEVICE AND METHOD FOR OPERATING A MEMORY CIRCUIT  
An electronic device is disclosed having a dielectric layer (12) formed at a semiconductor substrate (10). A polysilicon fuse structure (14) having a first length is formed overlying the...
US20070007621 Fuse breakdown method adapted to semiconductor device  
A plurality of pulses each having relatively low energy are consecutively applied to a subject fuse to cause breakdown, wherein the total energy of pulses is set in light of a prescribed breakdown...
US20050161766 Semiconductor device and method for fabricating the same  
The semiconductor device comprises an inter-layer insulating film 18 formed over a substrate 10, a fuse 26 buried in the inter-layer insulating film 18, and a cover film 30 formed over the...
US20130147009 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device includes: a fuse pattern formed at a first level, a first line pattern formed at a second level lower than the first level, a second line pattern formed at a third level...
US20080042234 Electric fuse circuit and electronic component  
An electric fuse circuit is provided which has a capacitor that forms an electric fuse; a write circuit for breaking an insulating film of the capacitor, by applying a voltage to a terminal of the...
US20090140382 ELECTRIC FUSE DEVICE MADE OF POLYSILICON SILICIDE  
A polysilicon silicide electric fuse device, comprising: a substrate; a semiconductor material layer disposed on said substrate, said semiconductor material layer includes lead-out areas of the...
US20050035429 Programmable eraseless memory  
An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second...
US20080029843 E-Fuse and Method for Fabricating E-Fuses Integrating Polysilicon Resistor Masks  
An E-fuse and a method for fabricating an E-fuse integrating polysilicon resistor masks, and a design structure on which the subject E-fuse circuit resides are provided. The E-fuse includes a...
US20070262413 E-FUSE AND METHOD FOR FABRICATING E-FUSES INTEGRATING POLYSILICON RESISTOR MASKS  
An E-fuse and a method for fabricating an E-fuse are provided integrating polysilicon resistor masks. The E-fuse includes a polysilicon layer defining a fuse shape including a cathode, an anode,...
US20060220174 E-Fuse and anti-E-Fuse device structures and methods  
Standard photolithography is used to pattern and fabricate a final polysilicon wafer imaged structure which is smaller than normal allowable photo-lithographic minimum dimensions. Three different...
US20060145290 Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type  
A semiconductor device includes a diffusion area formed in a semiconductor layer of a first conductive type. The diffusion area comprises first and second impurity diffusion areas of the first and...
US20150200166 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
A manufacturing method of a semiconductor device includes thermally curing a thermosetting resin material layer formed on a semiconductor wafer at a first temperature of 100° C. to 200° C. to form...
US20160163643 E-FUSE DEVICES AND METHOD FOR FABRICATING THE SAME  
E-fuse devices, and a method of manufacturing the same, include a first metal pattern extending in a first direction to connect a first electrode and a second electrode to each other, a first...
US20070273002 Semiconductor Memory Devices Having Fuses and Methods of Fabricating the Same  
An integrated circuit device is provided with a plurality of normally open fuse elements. A fuse element includes a fuse insulation film lining a sidewall and a bottom of a recess in a...
US20070063225 Semiconductor device, and method for manufacturing semiconductor device  
A semiconductor device includes a substrate, a fuse that can be blown by the radiation of light formed above the substrate, and insulating films formed on the fuse and on the substrate. One of the...
US20090236688 SEMICONDUCTOR DEVICE HAVING FUSE PATTERN AND METHODS OF FABRICATING THE SAME  
A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a...
US20120080769 ESD DEVICE AND METHOD  
A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least...
US20070222028 eFuse and method of manufacturing eFuse  
A silicide region includes a first contact region, a fuse region having a narrower longitudinal width than that of the first contact region, and a second contact region provided on an opposite...
US20050006718 Semiconductor device  
A semiconductor device includes a fuse wire, a portion to be fused that overlies the fuse wire with an insulation film interposed therebetween, and a plug connecting the portion to be fused and...
US20060231921 Micro fuse  
A micro fuse for use in a semiconductor device. The micro fuse comprises an insulating substrate and an elongate metal fuse member, the fuse member being supported at either end on the substrate...
US20060097341 Forming phase change memory cell with microtrenches  
A semiconductor substrate is covered by a dielectric region. The dielectric region accommodates a memory element and a selection element forming a phase change memory cell. The memory element is...
US20060038255 MOS electric fuse, its programming method, and semiconductor device using the same  
A programming method of a MOS electric fuse includes steps of preparing, as a fuse element, a MOS transistor which comprises second conductivity type first and second impurity regions formed to...
US20050218476 Integrated process for fuse opening and passivation process for Cu/Low-K IMD  
A new process flow is provided for the creation of a fuse contact and a bond pad. The invention starts with a semiconductor substrate over the surface of which is provided top level metal and fuse...
US20080237787 SEMICONDUCTOR INTEGRATED CIRCUIT  
The present invention aims at offering the semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The present invention is provided with a fuse...
US20080173975 PROGRAMMABLE RESISTOR, SWITCH OR VERTICAL MEMORY CELL  
Disclosed are embodiments of a device and method of forming the device that utilize metal ion migration under controllable conditions. The device embodiments comprise two metal electrodes...
US20050110112 Encapsulated chip and procedure for its manufacture  
An encapsulated chip chip 10 is attached to a baseplate 12, a conductive layer 14 that is at least as high as the chip 10 is attached to the baseplate. A cover plate 16, provided with electrically...
US20050077594 Semiconductor device with polysilicon fuse and method for trimming the same  
A semiconductor device includes a polysilicon fuse with a fusion portion and has a sequential stack made of an interlayer insulating film having a recess above the fusion portion, a surface...
US20150340319 E-FUSE STRUCTURE FOR AN INTEGRATED CIRCUIT PRODUCT  
An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region...
US20130043556 SIZE-FILTERED MULTIMETAL STRUCTURES  
A size-filtered metal interconnect structure allows formation of metal structures having different compositions. Trenches having different widths are formed in a dielectric material layer. A...
US20100117190 FUSE STRUCTURE FOR INTERGRATED CIRCUIT DEVICES  
A fuse structure for an IC device and methods of fabricating the structure are provided. The fuse structure comprises a metal-containing conductive strip formed over a portion of a semiconductor...
US20090039462 EFUSE DEVICES AND EFUSE ARRAYS THEREOF AND EFUSE BLOWING METHODS  
An exemplary embodiment of an efuse device is provided and comprises a plurality of word lines, at least one bit line, a plurality of cells, a plurality of first selection devices, and at least...
US20070252238 Tungstein plug as fuse for IC device  
The present invention provides a fuse circuit in a dielectric layer for trimming an Integrated Circuit. The fuse circuit has a first conductive layer, a second conductive layer and a third...
US20130187254 Semiconductor Chip and Methods for Producing the Same  
A fabrication method for thickening pad metal layers comprises: growing a first metal layer on a silicon substrate; etching the first metal layer to obtain a metal wire comprising a metal fuse and...
US20100213569 INTEGRATED CIRCUITS HAVING FUSES AND SYSTEMS THEREOF  
An integrated circuit includes a fuse over a substrate. The fuse has a first end, a second end, and a central portion between the first end and the second end. A first dummy pattern is disposed...

Matches 1 - 50 out of 164 1 2 3 4 >