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US20110042726 High-voltage transistor device with integrated resistor  
A high-voltage device structure comprises a resistor coupled to a tap transistor that includes a JFET in a configuration wherein a voltage provided at a terminal of the JFET is substantially...
US20100314709 LATCH-UP PREVENTION STRUCTURE AND METHOD FOR ULTRA-SMALL HIGH VOLTAGE TOLERANT CELL  
A latch-up prevention structure and method for ultra-small high voltage tolerant cell is provided. In one embodiment, the integrated circuit includes an input and/or output pad, a floating...
US20130249046 CONFIGURABLE ELECTROSTATIC DISCHARGING POWER CLAMP AND RELATED INTEGRATED CIRCUIT  
There is provided an integrated circuit includes an output driver and a configurable electrostatic discharging (ESD) power clamp element according to embodiments of the present invention. The...
US20110140227 Depletion mode circuit protection device  
A non-volatile microelectronic memory device that includes a depletion mode circuit protection device that prevents high voltages, which are applied to bitlines during an erase operation, from...
US20100327342 TRANSIENT OVER-VOLTAGE CLAMP  
In various embodiments, the invention relates to semiconductor structures, such as planar MOS structures, suitable as voltage clamp devices. Additional doped regions formed in the structures may...
US20060240330 Exposure method, mask, semiconductor device manufacturing method, and semiconductor device  
To provide an exposure method and mask capable of suppressing a fluctuation of a dimension of a resist pattern caused by a flexure of a membrane and a semiconductor device formed with a fine...
US20070290290 ESD Device Layout for Effectively Reducing Internal Circuit Area and Avoiding ESD and Breakdown Damage and Effectively Protecting High Voltage IC  
An improved layout pattern for electrostatic discharge protection is disclosed. A first heavily doped region of a first type is formed in a well of said first type. A second heavily doped region...
US20080036027 INTEGRATED CIRCUIT FOR A HIGH-SIDE TRANSISTOR DRIVER  
The high voltage integrated circuit is disclosed. The high voltage integrated circuit comprises a low voltage control circuit, a floating circuit, a P substrate, a deep N well disposed in the...
US20060220170 High-voltage field effect transistor having isolation structure  
A high-voltage MOSFET having isolation structure is provided. An N-type MOSFET includes a first deep N-type well. A first P-type region is formed in the first deep N-type well to enclose a first...
US20050056907 Power transistor and semiconductor integrated circuit using the same  
There is provided a power transistor, as well as a semiconductor integrated circuit using the power transistor, in which malfunctions of parasitic PNP transistor and circuit malfunctions due to...
US20100001364 Semiconductor Device Having Improved Oxide Thickness at a Shallow Trench Isolation Edge and Method of Manufacture Thereof  
One aspect of a semiconductor device includes an active region located in a semiconductor substrate and having an isolation region located therebetween. The active regions have corners adjacent...
US20070013021 Semiconductor device with a conduction enhancement layer  
A semiconductor device includes a drift layer of a first conductivity type having a doping concentration and a conduction layer also of the first conductivity type on the drift layer that has a...
US20100059851 CMOS CIRCUITS COMBINING HIGH VOLTAGE AND RF TECHNOLOGIES  
A CMOS circuit comprises at least one high voltage transistor (having gate and drain operating voltages of greater than 8V) and at least one high frequency capable transistor (having a maximum...
US20120193750 POWER MANAGEMENT INTEGRATED CIRCUIT  
A Power Management Integrated Circuit (PMIC) that includes a substrate, a high-side (HS) region on the substrate, a low-side (LS) region spaced from the first region, a device isolation layer...
US20080258253 Integrated Microprocessor System for Safety-Critical Regulations  
Disclosed is an integrated circuit arrangement for safety-critical applications, such as for regulating and controlling tasks in an electronic brake system for motor vehicles. The arrangement...
US20050029618 Structure and method of forming a dual-trench field effect transistor  
A field effect transistor includes a semiconductor region of a first conductivity type and a well region of a second conductivity type over the semiconductor region. A source region of the first...
US20090166797 HIGH-VOLTAGE INTEGRATED CIRCUIT DEVICE INCLUDING HIGH-VOLTAGE RESISTANT DIODE  
Provided is a high-voltage integrated circuit device including a high-voltage resistant diode. The device includes a low-voltage circuit region having a plurality of semiconductor devices, which...
US20090090990 FORMATION OF NITROGEN CONTAINING DIELECTRIC LAYERS HAVING AN IMPROVED NITROGEN DISTRIBUTION  
Provided is a method for manufacturing a gate dielectric. This method, without limitation, includes subjecting a silicon substrate to a first plasma nitridation process to incorporate a nitrogen...
US20080073745 High-voltage MOS device improvement by forming implantation regions  
A high-voltage semiconductor structure includes a high-voltage well region overlying a substrate, an isolation region extending from a top surface of the high-voltage well region into the...
US20080157259 Semiconductor device, method of controlling the same, and method of manufacturing the same  
The present invention provides a system comprising a semiconductor device, a method of controlling the semiconductor device in the system, and a method of manufacturing the semiconductor device in...
US20090302383 High-Voltage Transistor and Component Containing the Latter  
In a high-voltage NMOS transistor with low threshold voltage, it is proposed to realize the body doping that defines the channel region in the form of a deep p-well, and to arrange an additional...
US20090140372 Semiconductor Devices and Methods of Manufacture Thereof  
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes an array having at least one first region and at least one second region....
US20090289310 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an...
US20050156271 Data storage device  
The present invention pertains to a data storage device. The data storage device includes a storage medium having an electrode and an electrolyte layer positioned on the electrode. The data...
US20050167776 Vertical-type power metal oxide semiconductor device with excess current protective function  
In a vertical-type power metal oxide semiconductor device including a semiconductor substrate, and a plurality of transistor cells formed and arranged on the semiconductor substrate so as to be...
US20110316115 POWER SEMICONDUCTOR DEVICE  
A power semiconductor device comprises: a high-voltage side switching element and a low-voltage side switching element which are totem-pole-connected in that order from a high-voltage side between...
US20100164052 HIGH POWER INTEGRATED CIRCUIT DEVICE  
An integrated circuit (IC) includes a substrate having a semiconducting surface, a first array of devices on and in the semiconducting surface including first and second coacting current...
US20100253317 SEMICONDUCTOR DEVICE  
To include a first X decoder constituted by a transistor whose off-leakage current has a first temperature characteristic, a pre-decoder circuit and a peripheral circuit constituted by a...
US20090008740 Semiconductor Integrated Circuit Devices Having Conductive Patterns that are Electrically Connected to Junction Regions and Methods of Fabricating Such Devices  
A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting...
US20060202299 Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer  
A field effect transistor (FET) with novel field-plate structure relates to a Schottky gate FET structure with field plate thereon for high voltage operations. The structure and fabrication...
US20080237777 Completely decoupled high voltage and low voltage transistor manufacurting processes  
A semiconductor wafer includes at least a partially manufactured high voltage transistor covered by a high-voltage low voltage decoupling layer and at least a partially manufactured low voltage...
US20150243731 SEMICONDUCTOR DEVICE  
An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan...
US20100148298 SEMICONDUCTOR DEVICE  
A semiconductor device is composed of a pair of semiconductor chips (402, 404) arranged parallel on the same flat plane; a high voltage bus bar (21) bonded on the surface on the collector side of...
US20110198704 POWER SWITCH WITH ACTIVE SNUBBER  
A power switch with active snubber. In accordance with a first embodiment, an electronic circuit includes a first power semiconductor device and a second power semiconductor device coupled to the...
US20100283116 SEMICONDUCTOR DEVICE DRIVING BRIDGE-CONNECTED POWER TRANSISTOR  
A semiconductor device includes a low-side circuit, high-side circuit, a virtual ground potential pad, a common ground potential pad and a diode, formed on a semiconductor substrate. The low-side...
US20050285219 Nonvolatile semiconductor memory and method of fabricating the same  
A charge storage layer (112) in a gate insulating film of a cell transistor is so formed as not to extend from a channel region of a cell to an element isolation region. Since no electric charge...
US20130069154 SEMICONDUCTOR CHIP INTEGRATING HIGH AND LOW VOLTAGE DEVICES  
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations....
US20080093700 SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME  
A method for operating a semiconductor device is described, the semiconductor device including a high-voltage device and a control circuit coupled to each other on a single chip and the...
US20070158779 Methods and semiconductor structures for latch-up suppression using a buried damage layer  
Semiconductor structures and methods for suppressing latch-up in bulk CMOS devices. The structure comprises a damage layer formed in a substrate, a first doped well formed in the substrate, and a...
US20070138592 Asymmetric semiconductor device and fabrication method  
Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming...
US20050167760 Semiconductor device having high-voltage and low-voltage operation regions and method of fabricating the same  
A semiconductor device includes a first region formed with a first gate insulator and operated by a first operating voltage, a second region formed with a second gate insulator made from a...
US20140167207 SEMICONDUCTOR DEVICE  
A potential isolation element is provided separately from a diode. An n-type low-concentration region is formed on a P-type layer. A first high-concentration N-type region is positioned in the...
US20130069157 SEMICONDUCTOR CHIP INTEGRATING HIGH AND LOW VOLTAGE DEVICES  
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations....
US20100019343 SEMICONDUCTOR DEVICE  
A semiconductor device comprises: a first transistor in a substrate; a second transistor in said substrate; and a further device in said substrate, wherein the second transistor and the further...
US20090267148 Semiconductor integrated circuit devices  
A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity...
US20090140373 Method of Manufacturing LCD Driver IC  
Disclosed is a method of manufacturing an LCD driver IC. The method includes forming a plurality of gate patterns on a semiconductor substrate by sequentially forming a plurality of gate...
US20050263843 Semiconductor device and fabrication method therefor  
A high withstand voltage well is formed on a surface of a semiconductor substrate. A drain region and a source region of a high withstand voltage transistor included in an input protection circuit...
US20120018839 SEMICONDUCTOR DEVICE  
CMOS inverters are included in a standard cell. Power supply lines are electrically connected to CMOS inverters, and include lower layer interconnects and upper layer interconnect. Lower layer...
US20100244756 High Voltage Integration Circuit With Freewheeling Diode Embedded in Transistor  
A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the...
US20100148254 Power semiconductor device and method of manufacturing the same  
A semiconductor device and a method of manufacturing the same. The method includes preparing a semiconductor substrate having high-voltage and low-voltage device regions, forming a field...

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