Matches 1 - 35 out of 35


Match Document Document Title
US20080054391 MONOLITHIC SILICON-BASED PHOTONIC RECEIVER  
An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined...
US20070170462 Photo sensor and preparation method thereof  
A novel structure of photo sensor is disclosed. The equivalent circuit of the invented photo sensor comprises a photo transistor integrated with a surface photo sensor. The structure of the...
US20070052055 Capacitor over red pixel  
A red pixel having a capacitor formed over the photo-conversion region of the pixel. The capacitor can be used by other pixels as a common capacitor. The capacitor is coupled to floating diffusion...
US20070096243 Solid-state imaging device and manufacturing method thereof  
Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image...
US20150145097 PHOTODIODE WITH A DARK CURRENT SUPPRESSION JUNCTION  
This invention relates to field photodiodes based on PN junctions that suffer from dark current leakage. An NBL is added to prove a second PN junction with the anode. The second PN junction is...
US20100097084 METHOD FOR SELF-MONITORING OF BREAKDOWN IN SEMICONDUCTOR COMPONENTS AND SEMICONDUCTOR COMPONENT CONSTRUCTED THEREOF  
The invention relates to a method for monitoring the breakdown of a pn junction in a semiconductor component and to a semiconductor component adapted to carrying out said method. According to the...
US20070108546 PHOTOELECTRIC CONVERTER AND IMAGING SYSTEM INCLUDING THE SAME  
A photoelectric converter includes a substrate, photoelectric converting elements formed in the substrate and each having a light-receiving surface, an antireflection film arranged above at least...
US20090256230 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS  
In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion...
US20100101960 SINGLE-SIDED LATERAL-FIELD AND PHOTOTRANSISTOR-BASED OPTOELECTRONIC TWEEZERS  
Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric...
US20100038678 Photodiode with a Reduced Dark Current and Method for the Production Thereof  
A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped...
US20070052056 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SAME  
A solid-state imaging device includes: a semiconductor substrate; and a signal processing section provided on a backside of the semiconductor substrate. The semiconductor substrate has; a first...
US20070170537 Method and device for wavelength-sensitive photo-sensing  
A semiconductor device includes a conducting channel (130) formed beneath a substrate surface with a pre-determined photo-conductivity spectral response. The channel is formed between two...
US20070052054 CMOS imager with nitrided gate oxide and method of fabrication  
A CMOS imager having reduced dark current and methods of forming the same. A nitrided gate oxide layer having approximately twice the thickness of a typical nitrided gate oxide is provided over...
US20070080419 MOS type solid-state image pickup apparatus and method of manufacturing the same  
A MOS type solid-state image pickup apparatus comprises: a semiconductor substrate having a light receiving surface; a plurality of photoelectric conversion elements arranged in an array manner on...
US20060261431 Pixels for CMOS image sensors  
A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer...
US20060244090 Method for fabricating an integrated circuit comprising a photodiode and corresponding integrated circuit  
An integrated circuit includes a photodiode produced from the formation of a stack of three semiconductor layers. An overdoped storage zone is formed in a second (middle) layer of the stack. A...
US20100237455 PHOTOTRANSISTOR HAVING A BURIED COLLECTOR  
A phototransistor used for an image sensor is provided. The phototransistor can reduce a dark current that occurs in the phototransistor and improve sensitivity at low luminance without crosstalk...
US20070063304 Field-effect transistor, single-electron transistor and sensor using the same  
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1A having a substrate 2, a source...
US20080042231 Semiconductor device with a CMOS image sensor and method of manufacturing such a device  
The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a...
US20070145508 CMOS Image Sensor and Method for Manufacturing the Same  
A CMOS image sensor and a fabrication method thereof are provided. The CMOS image sensor includes a semiconductor substrate having an active area and an isolation area; a photodiode area and a...
US20100327148 CMOS Image Sensors Formed of Logic Bipolar Transistors  
An integrated circuit structure includes an image sensor cell, which further includes a photo transistor configured to sense light and to generate a current from the light.
US20090032896 OPTICAL SEMICONDUCTOR DEVICE  
An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor...
US20100044823 SEMICONDUCTOR PHOTONIC DEVICES WITH ENHANCED RESPONSIVITY AND REDUCED STRAY LIGHT  
In accordance with the invention, a photonic device comprises a semiconductor substrate including at least one circuit component comprising a metal silicide layer and an overlying layer including...
US20100181552 METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY  
Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation....
US20060186504 CMOS image sensor for reducing partition noise  
A CMOS image sensor according to an embodiment of the present invention includes a unit pixel, including a transfer transistor controlled by a transfer control signal; and a transfer control...
US20100213563 SEMICONDUCTOR OPTOELECTRONIC DEVICE AND QUAD FLAT NON-LEADED OPTOELECTRONIC DEVICE  
A semiconductor optoelectronic device including a substrate, a control chip, a light-sensing chip and a molding compound is provided. The control chip is disposed on the substrate and electrically...
US20100194950 SOLID-STATE IMAGE PICKUP DEVICE  
In a rear surface incidence type CMOS image sensor having a wiring layer 720 on a first surface (front surface) of an epitaxial substrate 710 in which a photodiode, a reading circuit (an n-type...
US20100194943 SOLID-STATE IMAGE PICKUP DEVICE  
In a rear surface incidence type CMOS image sensor having a wiring layer 720 on a first surface (front surface) of an epitaxial substrate 710 in which a photodiode, a reading circuit (an n-type...
US20090140367 OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant...
US20160247847 SEMICONDUCTOR DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer,...
US20150349186 PHOTOTRANSISTOR WITH BODY-STRAPPED BASE  
A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the semiconductor layer and a substrate. The...
US20150295119 CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS  
A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted...
US20150280046 PHOTOTRANSISTOR CAPABLE OF DETECTING PHOTON FLUX BELOW PHOTON SHOT NOISE  
Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being...
US20130056807 PHOTOELECTRIC CONVERTING APPARATUS  
A photoelectric converting apparatus has first and third semiconductor layers of a first conductivity type which respectively output signals obtained by photoelectric conversion, and second and...
US20110031578 SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor...

Matches 1 - 35 out of 35