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US20100013970 Semiconductor imaging instrument and manufacturing method thereof, and camera and manufacturing method thereof  
A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes...
US20120168891 ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS  
High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided....
US20110221024 ALUMINUM INDIUM ANTIMONIDE FOCAL PLANE ARRAY  
In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x
US20110221025 ALUMINUM INDIUM ANTIMONIDE FOCAL PLANE ARRAY  
In one embodiment, a detector includes an AlzIn(1-x)Sb passivation/etch stop layer, an AlxIn(1-x)Sb absorber layer disposed above the Alzn(1-x)Sb passivation/etch stop layer, and an AlIn(1-y)Sb...
US20090057801 Back-Illuminated, Thin Photodiode Arrays with Trench Isolation  
Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide...
US20100295141 TWO COLOUR PHOTON DETECTOR  
A two-color radiation detector includes a mesa-type multi-layered mercury-cadmium-telluride detector structure monolithically integrated on a substrate. The detector is responsive to two discrete...
US20130065064 METHOD OF MAKING AN ANTIREFLECTIVE SILICA COATING, RESULTING PRODUCT, AND PHOTOVOLTAIC DEVICE COMPRISING SAME  
A low-index silica coating may be made by forming silica sol comprising a silane and/or a colloidal silica. The silica precursor may be deposited on a substrate (e.g., glass substrate) to form a...
US20090250630 PHOTODIODE FOR DETECTION WITHIN MOLECULAR DIAGNOSTICS  
A photodiode (200), for instance a PN or a PIN photodiode, is disclosed. The photodiode receives incident radiation having first and second spectral distributions, where the first spectral...
US20060033175 Load lock modules and semiconductor manufacturing apparatuses  
A load lock module may include a chamber adapted to receive at least one wafer, a supply tube adapted to supply purging gas into the chamber, an outlet adapted to remove the purging gas from the...
US20140239432 ENERGY CONVERSION AND STORAGE DEVICE AND MOBILE ELECTRONIC DEVICE CONTAINING SAME  
An energy conversion and storage device includes an energy storage component (530, 601) including a first electrode (611) having a first plurality of channels (612) formed in a first region (615)...
US20150048239 PHOTODIODE ARRAY FOR SPECTROMETRIC MEASUREMENTS AND SPECTROMETRIC MEASUREMENT SYSTEM  
A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure of an antireflection coating is changed for each group so that all the surfaces...
US20110024768 SiC AVALANCHE PHOTODIODE WITH IMPROVED EDGE TERMINATION  
An avalanche photodiode semiconductor device (20) for converting an impinging photon (22) includes a base n+ doped material layer (52) formed having a window section (72) for passing the photon...
US20100301441 PHOTODIODE WITH HIGH ESD THRESHOLD  
A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector...
US20150200215 Light Sensing Integrated Circuit and Manufacturing Method of Sensing Integrated Circuit  
A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A...
US20110169121 THIN WAFER DETECTORS WITH IMPROVED RADIATION DAMAGE AND CROSSTALK CHARACTERISTICS  
The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises several embodiments that provide for...
US20080001243 Crystalline Silicon Wafer, Crystalline Silicon Solar Cell, Method of Manufacturing Crystalline Silicon Wafer, and Method of Manufacturing Crystalline Silicon Solar Cell  
There is disclosed a crystalline silicon wafer (1) having irregularities formed at its surface. The irregularities include first irregularities (2) and second irregularities (3) smaller than the...
US20090243018 HYBRID INORGANIC-ORGANIC POLYMER COMPOSITIONS FOR ANTI-REFLECTIVE COATINGS  
An organic-inorganic composition, which has a backbone containing —Si—O— units with chromophore groups attached directly to at least a part of the silicon atoms. The film forming composition and...
US20140167198 ATOMIC LAYER DEPOSITION OF HIGH PERFORMANCE ANTI REFLECTION COATINGS ON DELTA-DOPED CCDS  
A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a region of a silicon oxide surface that is left uncovered, while deposition is inhibited in another region by a contact...
US20080023782 PHOTO SENSOR AND FABRICATION METHOD THEREOF  
A photo sensor and a fabrication method thereof are provided. A fluorescent substance is utilized to absorb light in a specific wavelength range and re-emit light detectable by a photo transducer...
US20100038740 COLOR IMAGE SENSOR WITH IMPROVED OPTICAL CROSSTALK  
The invention relates to image sensors produced on a thinned silicon substrate. To limit the optical crosstalk between adjacent filters and, notably filters of different colors, the invention...
US20100270638 PHOTODIODES WITH SURFACE PLASMON COUPLERS  
A device that includes a signal generating unit having a surface that can receive photons, a first metal structure located on the surface of the signal generating unit, and a second metal...
US20130105928 BACKSIDE-THINNED IMAGE SENSOR USING Al2O3 SURFACE PASSIVATION  
A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, Al2O3, low thermal budget, surface passivation. This passivation approach...
US20090016200 METHOD OF MANUFACTURING PIN PHOTODIODE  
The objective of this invention is to provide a type of photodiode and the method of manufacturing the photodiode characterized by the fact that it has a higher photoelectric conversion efficiency...
US20110018085 SILICON PHOTOELECTRIC MULTIPLIER HAVING CELL STRUCTURE  
Disclosed is a silicon photoelectric multiplier having a cell structure, which includes a first type silicon substrate; a plurality of cells including a first type epitaxial layer formed on the...
US20120061786 ISOLATED BOND PAD WITH CONDUCTIVE VIA INTERCONNECT  
An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry...
US20110316110 ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS  
A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection...
US20090085140 FINGER TYPE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME  
Provided are a finger type photodiode and a method of manufacturing the same, which can reduce noise by forming a shallow doping layer. The finger type photodiode includes a bottom substrate...
US20120299143 Thin, very high transmittance, back-illuminated, silicon-on-saphire semiconductor substrates bonded to fused silica  
A very high transmittance, back-illuminated, silicon-on-thin sapphire-on-fused silica wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or...
US20110042653 Near-Infrared Absorbing Film Compositions  
A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid...
US20090008737 Image Sensor Having Anti-Reflection Film and Method of Manufacturing the Same  
Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal...
US20090207473 DEVICE HAVING POWER GENERATING BLACK MASK AND METHOD OF FABRICATING THE SAME  
A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited...
US20140210034 NEAR-INFRARED ABSORBING FILM COMPOSITIONS  
A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is...
US20110042771 Near-Infrared Absorbing Film Compositions  
A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is...
US20080308890 BACK-ILLUMINATED TYPE IMAGING DEVICE AND FABRICATION METHOD THEREOF  
Light is illuminated from a back-surface side of a silicon substrate 4. A back-illuminated type imaging device 100 reads out, from a front-surface side of the silicon substrate 4, charges that are...
US20110057279 ANTI-REFLECTIVE IMAGE SENSOR  
An anti-reflective image sensor and method of fabrication are provided, the sensor including a substrate; first color sensing pixels disposed in the substrate; second color sensing pixels disposed...
US20130049154 DEVICE AND METHOD FOR INDIVIDUAL FINGER ISOLATION IN AN OPTOELECTRONIC DEVICE  
An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is...
US20100164042 BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH BACKSIDE DIFFUSION DOPING  
Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a...
US20140202530 LIGHT HARVESTING SYSTEM EMPLOYING SURFACE FEATURES FOR EFFICIENT LIGHT TRAPPING  
A light harvesting system employing a photoresponsive layer having a plurality of light input ports that are formed in a light input surface of the layer. Light received by the light input ports...
US20130009129 QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME  
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions,...
US20090201395 BACKSIDE ILLUMINATED IMAGING SENSOR WITH REDUCED LEAKAGE PHOTODIODE  
A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is...
US20060214251 Photodiodes with anti-reflection coating  
A method of forming efficient photodiodes includes the steps of providing a substrate having a p-surface region on at least a portion thereof, implanting a shallow n-type surface layer into the...
US20110248370 ELECTROMAGNETIC RADIATION CONVERTER WITH A BATTERY  
The invention relates to semiconductor electronics and can be used for producing high-efficient broad-band electromagnetic radiation converters for directly converting incident radiation into...
US20150228680 Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same  
An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A...
US20110198717 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME  
An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad...
US20120104531 AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME  
Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption...
US20130161777 ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS  
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than...
US20100001358 PHOTODETECTOR AND METHOD FOR MANUFACTURING PHOTODETECTOR  
A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs...
US20090108285 Rod-Shaped Semiconductor Device  
A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive...
US20070241418 IMAGE SENSING DEVICE AND FABRICATION METHOD THEREOF  
An image sensing device includes a substrate with a photo sensing and a transistor regions, a photo diode, a transistor, a dielectric layer, a metal interconnect, a metal conductive line, a...
US20120112302 Novel Integration Process to Improve Focus Leveling Within a Lot Process Variation  
A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a...

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