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US20140138683 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a... |
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US20130285053 |
Sputtering Target for Oxide Thin Film and Process for Producing the Sputtering Target
Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a... |
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US20120126226 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique... |
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US20110210328 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a... |
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US20110121290 |
Semiconductor Device and Manufacturing Method Thereof
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide... |
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US20100171117 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique... |
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US20120273775 |
SEMICONDUCTOR-ON-DIAMOND DEVICES AND METHODS OF FORMING
The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely... |
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US20110089417 |
SEMICONDUCTOR DEVICE
An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation... |
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US20090179199 |
FIELD EFFECT TRANSISTOR WITH AMORPHOUS OXIDE LAYER CONTAINING MICROCRYSTALS
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals. |
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US20090153762 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique... |
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US20170012091 |
LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND CELLULAR PHONE
The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a... |
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US20160358950 |
DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE
The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide... |
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US20160307925 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME
An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor... |
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US20130299824 |
SEMICONDUCTOR DEVICE
An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in... |
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US20110101335 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling... |
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US20110062436 |
TRANSISTOR AND DISPLAY DEVICE
To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an... |
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US20100193785 |
SEMICONDUCTOR DEVICE
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate... |
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US20140264321 |
Method of Fabricating IGZO by Sputtering in Oxidizing Gas
In some embodiments, oxidants such as ozone (O3) and/or nitrous oxide (N2O) are used during the reactive sputtering of metal-based semiconductor layers used in TFT devices. The O3 and N2O gases... |
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US20130328044 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including... |
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US20110101333 |
SEMICONDUCTOR DEVICE
An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power... |
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US20170141240 |
OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE
A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either... |
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US20170069760 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor... |
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US20160056299 |
SEMICONDUCTOR DEVICE
A decrease in on-state current in a semiconductor device including an oxide semiconductor film is suppressed. A transistor including an oxide semiconductor film, an insulating film which includes... |
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US20140167041 |
SEMICONDUCTOR DEVICE
An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation... |
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US20130221348 |
SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THE SAME, AND THIN FILM TRANSISTOR
A transparent semiconductor thin film 40 having low carrier concentration and a large energy band gap is produced by forming a thin film which contains indium oxide and an oxide of a positive... |
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US20130187150 |
SEMICONDUCTOR DEVICE
A transistor in which a short-channel effect is not substantially caused and which has switching characteristics even in the case where the channel length is short is provided. Further, a highly... |
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US20110303913 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical... |
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US20110215318 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a... |
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US20110062433 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to... |
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US20160380111 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a... |
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US20160357045 |
LIQUID CRYSTAL DISPLAY DEVICE
It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a... |
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US20160307776 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate... |
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US20160225908 |
SEMICONDUCTOR DEVICE
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first... |
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US20110062435 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
It is an object to provide a highly reliable thin film transistor with stable electric characteristics, which includes an oxide semiconductor film. The channel length of the thin film transistor... |
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US20100032008 |
ZINC OXIDE MULTI-JUNCTION PHOTOVOLTAIC CELLS AND OPTOELECTRONIC DEVICES
Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices... |
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US20150053979 |
DISPLAY DEVICE, DRIVING METHOD OF DISPLAY DEVICE, AND ELECTRONIC APPLIANCE
A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels... |
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US20130341618 |
Shift Register And Display Device And Driving Method Thereof
The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring.... |
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US20120300150 |
DISPLAY DEVICE
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate... |
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US20120032163 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
The electric characteristics of a semiconductor device including an oxide semiconductor change by irradiation with visible light or ultraviolet light. In view of the above problem, one object is... |
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US20110227060 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching... |
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US20110156020 |
Transistor
Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be... |
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US20100301329 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is... |
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US20100252832 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is... |
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US20090189155 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or... |
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US20170123251 |
DISPLAY DEVICE AND ELECTRONIC DEVICE
A novel display device capable of adjusting color purity is provided. A novel display device with improved adhesion of a color filter is provided. A novel display device capable of excellent... |
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US20140070211 |
FIELD-EFFECT TRANSISTOR
Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In+Zn) is not... |
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US20140061632 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A thin film transistor substrate including a base substrate; an active pattern disposed on the base substrate and including a source electrode, a drain electrode, and a channel including an oxide... |
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US20130207106 |
AMORPHOUS OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR USING THE SAME
There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and... |
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US20130075722 |
SEMICONDUCTOR DEVICE
A highly reliable structure for high-speed response and high-speed driving of a semiconductor device, in which on-state characteristics of a transistor are increased is provided. In the coplanar... |
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US20100117070 |
TEXTURED SEMICONDUCTOR LIGHT-EMITTING DEVICES
A light-emitting device, such as a light-emitting diode (LED), includes a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate. The structure... |