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US20140138683 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a...
US20130285053 Sputtering Target for Oxide Thin Film and Process for Producing the Sputtering Target  
Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a...
US20120126226 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE  
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique...
US20110210328 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a...
US20110121290 Semiconductor Device and Manufacturing Method Thereof  
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide...
US20100171117 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE  
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique...
US20120273775 SEMICONDUCTOR-ON-DIAMOND DEVICES AND METHODS OF FORMING  
The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely...
US20110089417 SEMICONDUCTOR DEVICE  
An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation...
US20090179199 FIELD EFFECT TRANSISTOR WITH AMORPHOUS OXIDE LAYER CONTAINING MICROCRYSTALS  
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
US20090153762 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRIC DEVICE  
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique...
US20170012091 LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND CELLULAR PHONE  
The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a...
US20160358950 DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE  
The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide...
US20160307925 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME  
An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor...
US20130299824 SEMICONDUCTOR DEVICE  
An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in...
US20110101335 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling...
US20110062436 TRANSISTOR AND DISPLAY DEVICE  
To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an...
US20100193785 SEMICONDUCTOR DEVICE  
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate...
US20140264321 Method of Fabricating IGZO by Sputtering in Oxidizing Gas  
In some embodiments, oxidants such as ozone (O3) and/or nitrous oxide (N2O) are used during the reactive sputtering of metal-based semiconductor layers used in TFT devices. The O3 and N2O gases...
US20130328044 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including...
US20110101333 SEMICONDUCTOR DEVICE  
An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power...
US20170141240 OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE  
A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either...
US20170069760 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor...
US20160056299 SEMICONDUCTOR DEVICE  
A decrease in on-state current in a semiconductor device including an oxide semiconductor film is suppressed. A transistor including an oxide semiconductor film, an insulating film which includes...
US20140167041 SEMICONDUCTOR DEVICE  
An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation...
US20130221348 SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THE SAME, AND THIN FILM TRANSISTOR  
A transparent semiconductor thin film 40 having low carrier concentration and a large energy band gap is produced by forming a thin film which contains indium oxide and an oxide of a positive...
US20130187150 SEMICONDUCTOR DEVICE  
A transistor in which a short-channel effect is not substantially caused and which has switching characteristics even in the case where the channel length is short is provided. Further, a highly...
US20110303913 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical...
US20110215318 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a...
US20110062433 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to...
US20160380111 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a...
US20160357045 LIQUID CRYSTAL DISPLAY DEVICE  
It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a...
US20160307776 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate...
US20160225908 SEMICONDUCTOR DEVICE  
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first...
US20110062435 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
It is an object to provide a highly reliable thin film transistor with stable electric characteristics, which includes an oxide semiconductor film. The channel length of the thin film transistor...
US20100032008 ZINC OXIDE MULTI-JUNCTION PHOTOVOLTAIC CELLS AND OPTOELECTRONIC DEVICES  
Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices...
US20150053979 DISPLAY DEVICE, DRIVING METHOD OF DISPLAY DEVICE, AND ELECTRONIC APPLIANCE  
A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels...
US20130341618 Shift Register And Display Device And Driving Method Thereof  
The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring....
US20120300150 DISPLAY DEVICE  
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate...
US20120032163 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
The electric characteristics of a semiconductor device including an oxide semiconductor change by irradiation with visible light or ultraviolet light. In view of the above problem, one object is...
US20110227060 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching...
US20110156020 Transistor  
Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be...
US20100301329 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is...
US20100252832 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is...
US20090189155 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or...
US20170123251 DISPLAY DEVICE AND ELECTRONIC DEVICE  
A novel display device capable of adjusting color purity is provided. A novel display device with improved adhesion of a color filter is provided. A novel display device capable of excellent...
US20140070211 FIELD-EFFECT TRANSISTOR  
Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In+Zn) is not...
US20140061632 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME  
A thin film transistor substrate including a base substrate; an active pattern disposed on the base substrate and including a source electrode, a drain electrode, and a channel including an oxide...
US20130207106 AMORPHOUS OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR USING THE SAME  
There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and...
US20130075722 SEMICONDUCTOR DEVICE  
A highly reliable structure for high-speed response and high-speed driving of a semiconductor device, in which on-state characteristics of a transistor are increased is provided. In the coplanar...
US20100117070 TEXTURED SEMICONDUCTOR LIGHT-EMITTING DEVICES  
A light-emitting device, such as a light-emitting diode (LED), includes a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate. The structure...