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US20050085059 Method for manufacturing word line of semiconductor device  
The present invention relates to a method for forming a word line wherein a gate electrode comprises aluminum silicide (AlSix) having low electrical resistance and stress to form a word line...
US20110095381 Gate structure and method for making same  
A MOS transistor having its gate successively comprising an insulating layer, a metal silicide layer, a layer of a conductive encapsulation material, and a polysilicon layer.
US20120299125 SELF-ALIGNED CONTACTS  
A method of forming a gate structure with a self-aligned contact is provided and includes sequentially depositing a sacrificial layer and a secondary layer onto poly-Si disposed at a location of...
US20130026582 PARTIAL POLY AMORPHIZATION FOR CHANNELING PREVENTION  
Semiconductor devices are formed without zipper defects or channeling and through-implantation and with different silicide thicknesses in the gates and source/drain regions, Embodiments include...
US20070001246 Gate electrode with double diffusion barrier and fabrication method of semiconductor device including the same  
A gate electrode with a double diffusion barrier and a fabrication method of a semiconductor device including the same are provided. The gate electrode of a semiconductor device includes: a...
US20120104516 METAL SILICIDE FORMATION  
Techniques for forming metal silicide contact pads on semiconductor devices are disclosed, and in one exemplary embodiment, a method may comprise depositing a metal layer on and between a...
US20090085030 INCREASED RELIABILITY FOR A CONTACT STRUCTURE TO CONNECT AN ACTIVE REGION WITH A POLYSILICON LINE  
By forming a direct contact structure connecting, for instance, a polysilicon line with an active region on the basis of an increased amount of metal silicide by removing the sidewall spacers...
US20110068418 SUBSTRATE SYMMETRICAL SILICIDE SOURCE/DRAIN SURROUNDING GATE TRANSISTOR  
Field effect transistors described herein include first and second terminals vertically separated by a channel region. The first and second terminals comprise first and second silicide elements...
US20100025782 TECHNIQUE FOR REDUCING SILICIDE NON-UNIFORMITIES IN POLYSILICON GATE ELECTRODES BY AN INTERMEDIATE DIFFUSION BLOCKING LAYER  
Threshold variability in advanced transistor elements, as well as increased leakage currents, may be reduced by incorporating a barrier material in a polysilicon gate electrode. The barrier...
US20140048892 SELF ALIGNED MOS STRUCTURE WITH POLYSILICON CONTACT  
An integrated circuit structure has a substrate comprising a well region and a surface region, an isolation region within the well region, a gate insulating layer overlying the surface region,...
US20090283841 SCHOTTKY DEVICE  
An integrated circuit structure has a metal silicide layer formed on an n-type well region, a p-type guard ring formed on the n-type well region and encircling the metal silicide layer. The outer...
US20090315091 GATE STRUCTURE, AND SEMICONDUCTOR DEVICE HAVING A GATE STRUCTURE  
A gate structure can include a polysilicon layer, a metal layer on the polysilicon layer, a metal silicide nitride layer on the metal layer and a silicon nitride mask on the metal silicide nitride...
US20110215425 TUNNELING FIELD-EFFECT TRANSISTOR WITH DIRECT TUNNELING FOR ENHANCED TUNNELING CURRENT  
Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons...
US20090224339 Silicon-Germanium-Carbon Semiconductor Structure  
In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second...
US20060284272 Gate structure and method for preparing the same  
The present gate structure comprises a gate oxide layer positioned on a substrate, a conductive stack positioned on the gate oxide layer, a passivation layer positioned on the sidewall of the...
US20060186491 Methods of forming semiconductor devices having metal gate electrodes and related devices  
Methods of forming semiconductor devices and the devices so formed include forming an oxidation barrier pattern to cover sidewalls of a metal-containing pattern. The metal-containing pattern is...
US20060118892 Methods and Structures to Produce a Strain-Inducing Layer in a Semiconductor Device  
Described are methods of manufacturing a strain-inducing layer in semiconductor devices and structures formed to have such strain-inducing layers. Circuit elements are formed on a semiconductor...
US20090236676 STRUCTURE AND METHOD TO MAKE HIGH PERFORMANCE MOSFET WITH FULLY SILICIDED GATE  
The present invention in one embodiment provides a method of producing a device including providing a semiconducting device including a gate structure including a silicon containing gate conductor...
US20050236626 Semiconductor device, producing method of semiconductor substrate, and producing method of semiconductor device  
In a semiconductor device including an insulative substrate and a thin film device formed thereon, a thin film transistor having a non-single crystalline silicon thin film and a transistor having...
US20140159172 Transistors, Semiconductor Devices, and electronic devices including transistor gates with conductive elements including cobalt silicide  
A method for fabricating a transistor gate with a conductive element that includes cobalt silicide includes use of a sacrificial material as a place-holder between sidewall spacers of the...
US20130134527 STRUCTURE AND METHOD TO FABRICATE A BODY CONTACT  
A structure and method to fabricate a body contact on a transistor is disclosed. The method comprises forming a semiconductor structure with a transistor on a handle wafer. The structure is then...
US20120119310 STRUCTURE AND METHOD TO FABRICATE A BODY CONTACT  
A structure and method to fabricate a body contact on a transistor is disclosed. The method comprises forming a semiconductor structure with a transistor on a handle wafer. The structure is then...
US20100171188 INTEGRATED CIRCUIT DEVICE WITH SINGLE CRYSTAL SILICON ON SILICIDE AND MANUFACTURING METHOD  
A silicide element separates a single crystal silicon node from an underlying silicon substrate, and is capable of acting as a conductive element for interconnecting devices on the device. The...
US20080054381 GATE ELECTRODE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME  
A method of forming a gate electrode of a semiconductor device includes at least one of the following steps: Forming a gate oxide layer over a wafer substrate. Forming a polysilicon layer over the...
US20100301429 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
In a p-channel-type field-effect transistor having a metal gate electrode, a technique capable of stably obtaining a desired threshold voltage is provided. On a gate insulating film composed of a...
US20100276760 SEMICONDUCTOR DEVICE WITH METAL GATE  
Gate electrode structures having a thin layer of ReO3 formed with high effective work function and high heat resistance are disclosed. The thin layer of ReO3 is formed by providing a semiconductor...
US20090261429 TRANSISTOR AND METHOD FOR MANUFACTURING THEREOF  
A transistor includes a gate insulating layer over a semiconductor substrate; a first insulating layer on both sides of the gate insulating layer; first spacers over the first insulating layer and...
US20090243002 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A semiconductor device according to one embodiment includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate via a gate insulating film; a first silicide layer...
US20080093682 Polysilicon levels for silicided structures including MOSFET gate electrodes and 3D devices  
Semiconductor structures having a silicided gate electrode and methods of manufacture are provided. A device comprises a first silicided structure formed in a first active region and a second...
US20060220158 Semiconductor device and manufacturing method thereof  
A semiconductor device includes: a semiconductor layer; a high dielectric constant gate insulation film disposed above the semiconductor layer, the high dielectric constant gate insulation film...
US20110309445 SEMICONDUCTOR FABRICATION  
Embodiments of the present invention provide the ability to fabricate devices having similar physical dimensions, yet with different operating characteristics due to the different effective...
US20100001354 SELF ALIGNED MOS STRUCTURE WITH POLYSILICON CONTACT  
A method for fabricating a semiconductor integrated circuit and resulting structure. The method includes providing a semiconductor substrate with an overlying dielectric layer and forming a...
US20070052043 Multilayer gate electrode, semiconductor device having the same and method of fabricating the same  
Example embodiments relate to a multilayer gate electrode, a semiconductor device having the same and methods of fabricating the same. Other example embodiments relate to a semiconductor device...
US20060091459 SEMICONDUCTOR DEVICE HAVING METAL SILICIDE AND METHOD OF MAKING THE SAME  
A MOS transistor device includes a polysilicon gate with opposing sidewalls over an active area of a semiconductor substrate. The polysilicon gate has a gate length ā€œLā€. Dielectric spacers are...
US20100244048 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate (1) including a silicon carbide layer (2); a high-concentration impurity region (4)...
US20090321856 SELF-ALIGNED INSULATING ETCHSTOP LAYER ON A METAL CONTACT  
A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide...
US20090242901 SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF  
The present invention provides a method of fabricating a metal oxide semiconductor field effect transistor. The method includes the steps of forming a source region on a silicon carbide layer and...
US20070057333 MOS transistor and method of manufacturing the same  
Example embodiments relate to a metal-oxide-semiconductor (MOS) transistor and a method of manufacturing the MOS transistor. In a MOS transistor and a method of manufacturing the same, a gate...
US20050189600 Semiconductor device having gate electrode of staked structure including polysilicon layer and metal layer and method of manufacturing the same  
The present invention provides a semiconductor device, comprising a gate electrode of a stacked structure consisting of a polysilicon layer and a metal layer, a cap insulating film formed on the...
US20170117226 LOW RESISTANCE CONTACT STRUCTURES FOR TRENCH STRUCTURES  
An electrical device including at least one contact surface and an interlevel dielectric layer present atop the electrical device, wherein the interlevel dielectric layer includes at least one...
US20160315162 CONTACT GEOMETRY HAVING A GATE SILICON LENGTH DECOUPLED FROM A TRANSISTOR LENGTH  
A semiconductor device structure includes an active region positioned in a semiconductor substrate and a gate structure of a transistor positioned above the active region. The gate structure...
US20150243750 III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHOD OF MAKING THE SAME  
A semiconductor device comprises a semiconductor substrate; a channel layer of at least a first III-V semiconductor compound above the semiconductor substrate; a gate stack structure above a first...
US20150014792 III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHOD OF MAKING THE SAME  
A semiconductor device comprises a semiconductor substrate; a channel layer of at least a first III-V semiconductor compound above the semiconductor substrate; a gate stack structure above a first...
US20140374845 SEMICONDUCTOR DEVICE  
A semiconductor device includes a fin-shaped silicon layer on a semiconductor substrate and extending in a first direction and a first insulating film around the fin-shaped semiconductor layer. A...
US20140091403 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE  
A method for producing a semiconductor device includes a step of forming a first insulating film around a fin-shaped silicon layer and forming a pillar-shaped silicon layer in an upper portion of...
US20130328138 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE  
A method for producing a semiconductor device includes a first step including forming a planar silicon layer and forming first and second pillar-shaped silicon layers; a second step including...
US20120098073 Semiconductor Device  
A semiconductor device is provided. The semiconductor device includes: a substrate; device isolation regions formed in the substrate; an impurity region formed in a region of the substrate between...
US20110316096 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE  
A semiconductor device can be manufactured by a method that includes forming a structure that includes a plurality of layers of semiconductor material. One or more etching processes are performed...
US20110241133 Semiconductor device and manufacturing method thereof  
A semiconductor device has a gate electrode including polysilicon, and a hydrogen occluding layer covering at least a top face of the gate electrode and having a function of occluding hydrogen.
US20110175172 MANUFACTURING A SEMICONDUCTOR DEVICE  
There is provided a semiconductor device including: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate; a work function control layer formed on the gate...
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