Matches 1 - 37 out of 37


Match Document Document Title
US20120228722 SRAM CELL WITH T-SHAPED CONTACT  
An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater...
US20110204452 SRAM CELL WITH T-SHAPED CONTACT  
An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater...
US20110156168 SRAM CELL WITH T-SHAPED CONTACT  
An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater...
US20100308419 SRAM Cell with T-Shaped Contact  
An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater...
US20090166757 STRESS ENGINEERING FOR SRAM STABILITY  
A design structure embodied in a machine readable medium is provided for use in the design, manufacturing, and/or testing of Ics that include at least one SRAM cell. In particular, the present...
US20110031473 Nanomesh SRAM Cell  
Nanowire-based devices are provided. In one aspect, a SRAM cell includes at least one pair of pass gates and at least one pair of inverters formed adjacent to one another on a wafer. Each pass...
US20080277739 Finfet Transistors  
A fin FET array includes a number of fins 12 and a switch FET 52 between fins 12. The switch FET 52 acts to divide the transistor array into first 42 and second 44 FINFET regions having first 46...
US20100314692 Structures Of SRAM Bit Cells  
A SRAM bit cell and an associated method of producing the SRAM bit cell with improved performance and stability is provided. In one configuration, channel mobility of the transistors within the...
US20090309170 Semiconductor device having a power cutoff transistor  
Disclosed herein is a semiconductor device having a power cutoff transistor including a semiconductor substrate of a first conductivity type; and first and second wells of the first conductivity...
US20090194824 BODY CONTROLLED DOUBLE CHANNEL TRANSISTOR AND CIRCUITS COMPRISING THE SAME  
By providing a body controlled double channel transistor, increased functionality in combination with enhanced stability may be accomplished. For instance, flip flop circuits usable for static RAM...
US20070181958 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME  
A semiconductor device such as a Static Random Access Memory (SRAM) cell includes an access transistor. A drain of the access transistor includes a first N-type impurity and a second N-type...
US20060157802 Electric device using sold electrolyte  
The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a...
US20090189227 STRUCTURES OF SRAM BIT CELLS  
A SRAM bit cell and an associated method of producing the SRAM bit cell with improved performance and stability is provided. In one configuration, channel mobility of the transistors within the...
US20100127337 INVERTER STRUCTURE AND METHOD FOR FABRICATING THE SAME  
An inverter structure is disclosed. The inverter structure includes an NMOS transistor and a PMOS transistor. Preferably, the NMOS transistor includes an n-type gate electrode and an n-type...
US20070272988 VOLTAGE REGULATING APPARATUS  
There is disclosed a voltage regulating apparatus with a short settling time and a small current consumption. The voltage regulating apparatus comprises a reference voltage generator including an...
US20090289302 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A semiconductor device 1 comprises: a semiconductor substrate 100; first semiconductor element regions formed on the semiconductor substrate 100 in which first semiconductor elements of first...
US20090166758 INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICAL STRAP  
A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An...
US20090224334 Merged Field Effect Transistor Cells For Switching  
Disclosed are embodiments of an improved integrated circuit switching device that incorporates multiple sets of series connected field effect transistors with each set further connected in...
US20100264497 Multiple Vt Field-Effect Transistor Devices  
Multiple threshold voltage (Vt) field-effect transistor (FET) devices and techniques for the fabrication thereof are provided. In one aspect, a FET device is provided including a source region; a...
US20080173955 STATIC SEMICONDUCTOR MEMORY DEVICE  
A first transfer transistor includes a first diffusion layer connected to a first bit line, and a second diffusion layer connected to a first storage node, the first diffusion layer is provided in...
US20070181957 SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTORS AND METHOD FOR MANUFACTURING THE SAME  
Provided is a semiconductor device including a thin film transistor with at least one protruding impurity region and a method for manufacturing the same. The semiconductor device includes bulk...
US20110079858 SEMICONDUCTOR MEMORY DEVICE HAVING A SENSE AMPLIFIER CIRCUIT WITH DECREASED OFFSET  
A semiconductor memory device having high integration, low power consumption and high operation speed. The memory device includes a sense amplifier circuit having plural pull-down circuits and a...
US20070034970 Semiconductor device and method of fabricating the same  
The semiconductor device comprises a semiconductor substrate having a first active region, wherein the first active region includes a recessed region, a first gate formed on a channel between...
US20070063292 Semiconductor apparatus integrating an electrical device under an electrode pad  
A semiconductor apparatus includes a device, two metal-wiring layers, and an insulation film. The device includes first and second electrodes. The two metal-wiring layers include uppermost and...
US20100084716 Semiconductor device  
Provided is a semiconductor device including a substrate, a gate insulating film which is formed on the substrate, and a gate electrode which is provided on the gate insulating film. The gate...
US20140110731 Semiconductor Device, and Display Device and Electronic Device Having the Same  
An object is to provide a semiconductor device which can suppress characteristic deterioration in each transistor without destabilizing operation. In a non-selection period, a transistor is turned...
US20100289091 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device is provided with an SRAM cell unit. The SRAM cell unit is provided with a data storing section composed of a pair of drive transistors and a pair of load transistors; a data...
US20050167733 Memory device and method of manufacture  
A memory cell and a method for manufacturing the memory cell. The memory cell is constructed so that it has a ratio of a dimension in the direction of the bit lines to a dimension in the direction...
US20170162438 GATE TIE-DOWN ENABLEMENT WITH INNER SPACER  
A gate tie-down structure includes a gate structure including a gate conductor and gate spacers and inner spacers formed on the gate spacers. Trench contacts are formed on sides of the gate...
US20170047254 GATE TIE-DOWN ENABLEMENT WITH INNER SPACER  
A method for forming a gate tie-down includes opening up a cap layer and recessing gate spacers on a gate structure to expose a gate conductor; forming inner spacers on the gate spacers; etching...
US20160204193 TRIGATE TRANSISTOR STRUCTURE WITH UNRECESSED FIELD INSULATOR AND THINNER ELECTRODES OVER THE FIELD INSULATOR  
Techniques related to integrated circuits having MOSFETs with an unrecessed field insulator and thinner electrodes over the field insulator of ICs, systems incorporating such integrated circuits,...
US20160197069 MONOLITHIC THREE-DIMENSIONAL (3D) ICs WITH LOCAL INTER-LEVEL INTERCONNECTS  
Monolithic 3D ICs employing one or more local inter-level interconnect integrated intimately with at least one structure of at least one transistor on at least one transistor level within the 3D...
US20150303193 INTEGRATED CIRCUIT AND RELATED MANUFACTURING METHOD  
A method for manufacturing an integrated circuit may include the following steps: forming a first transistor, which includes a first active region; forming a second transistor, which includes a...
US20120061770 Nonvolatile Memory Device and Method of Manufacturing the Same  
A method of manufacturing a nonvolatile memory device wherein first gate lines and second gate lines are formed over a semiconductor substrate. The first gate lines are spaced-from each other at a...
US20120056273 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes: a first transistor formed on a semiconductor substrate; and a second transistor formed above the semiconductor substrate with an insulation film interposed...
US20110186936 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME  
a method for producing a semiconductor device provided in such a manner that a first layer and a second layer are laminated to ensure that their TSVs are arranged in almost a straight line,...
US20110068413 Embedded SRAM Memory for Low Power Applications  
Circuits and methods for providing a dual gate oxide (DGO) embedded SRAM with additional logic portions, where the logic and the embedded SRAM have NMOS transistors having a common gate dielectric...

Matches 1 - 37 out of 37