Matches 1 - 20 out of 20


Match Document Document Title
US20070246778 ELECTROSTATIC DISCHARGE PANEL PROTECTION STRUCTURE  
An electrostatic discharge protection structure disposed in a peripheral area of a display panel is electrical connected to a wire of a display area of the display panel and a short ring of the...
US20150262993 Diode-Based ESD Concept for DEMOS Protection  
The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a...
US20060226488 Lateral bipolar transistor with additional ESD implant  
A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an...
US20150070804 BIGFET ESD PROTECTION THAT IS ROBUST AGAINST THE FIRST PEAK OF A SYSTEM-LEVEL PULSE  
Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bigFET...
US20090108289 DESIGN STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE  
A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to...
US20090050970 Diode-Based ESD Concept for DEMOS Protection  
The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a...
US20090085061 HIGH-VOLTAGE SEMICONDUCTOR SWITCHING ELEMENT  
In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter...
US20080116520 Termination Structures For Semiconductor Devices and the Manufacture Thereof  
A semiconductor device has a semiconductor body (22) comprising an active area (7) and a termination structure (16) surrounding the active area. The termination structure comprises a plurality of...
US20100006944 MIXED VOLTAGE TOLERANT INPUT/OUTPUT ELECTROSTATIC DISCHARGE DEVICES  
An input/output (I/O) mixed-voltage drive circuit and electrostatic discharge protection device for coupling to an I/O pad. The device includes an NFET device having a gate, a drain, a source and...
US20140035039 ELECTROSTATIC DISCHARGE (ESD) GUARD RING PROTECTIVE STRUCTURE  
An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type...
US20080048208 ELECTROSTATIC DISCHARGE PROTECTION DEVICE FOR AN INTEGRATED CIRCUIT  
An integrated circuit is made of a semiconductor material and comprises an input and/or output terminal connected to an output transistor forming a parasitic element capable of triggering itself...
US20110084339 SEMICONDUCTOR DEVICE AND METHOD OF ELECTROSTATIC DISCHARGE PROTECTION THEREFOR  
A semiconductor device comprises at least one switching element. The at least one switching element comprises a first channel terminal, a second channel terminal and a switching terminal, the...
US20070194381 Memory integrated circuit device providing improved operation speed at lower temperature  
An example embodiment of the memory integrated circuit device may include a first temperature sensing unit, a first voltage adjusting unit, and a MOS back bias voltage outputting unit. The first...
US20100052057 HIGH VOLTAGE DEVICE WITH REDUCED LEAKAGE  
A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a...
US20090206420 SEMICONDUCTOR DEVICE AND METHOD  
A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the...
US20110169094 GATE PROTECTION DIODE FOR HIGH-FREQUENCY POWER AMPLIFIER  
A high-frequency power amplifier of the type to be mounted in an RF module for mobile phones having high-frequency power field effect transistors and gate protective diodes which are coupled...
US20150340357 ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK  
An ESD cell includes an n+ buried layer (NBL) within a p-epi layer on a substrate. An outer deep trench isolation ring (outer DT ring) includes dielectric sidewalls having a deep n-type diffusion...
US20150171070 Semiconductor Device and Switching Circuit  
A semiconductor device of the present invention includes: a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor...
US20140210008 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes an n-type drift layer formed on a main surface of a semiconductor substrate, a plurality of p-type well regions formed selectively in an upper layer portion of the...
US20130026577 SEMICONDUCTOR DEVICE  
A high-frequency power amplifier of the type to be mounted in an RF module for mobile phones having high-frequency power field effect transistors and gate protective diodes which are coupled...

Matches 1 - 20 out of 20