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US20120211831 TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION  
A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction of body regions in...
US20110042742 STRUCTURES OF AND METHODS OF FABRICATING TRENCH-GATED MIS DEVICES  
In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids...
US20120032261 TRENCH MOSFET HAVING FLOATING DUMMY CELLS FOR AVALANCHE IMPROVEMENT  
A trench MOSFET comprising source regions having a doping profile of a Gaussian-distribution along the top surface of epitaxial layer and floating dummy cells formed between edge trench and active...
US20130015521 CROSS-HAIR CELL DEVICES AND METHODS FOR MANUFACTURING THE SAME  
Systems and methods are disclosed for manufacturing grounded gate cross-hair cells and standard cross-hair cells of fin field-effect transistors (finFETs). In one embodiment, a process may include...
US20110079844 Trench mosfet with high cell density  
A trench MOSFET with high cell density is disclosed where there is a heavily doped contact region on the top surface of mesas between a pair of gate trenches. The present invention can prevent the...
US20130153999 TRENCH GATE MOSFET DEVICE  
A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region...
US20130099311 INTEGRATED GATE RUNNER AND FIELD IMPLANT TERMINATION FOR TRENCH DEVICES  
In one general aspect, an apparatus can include a plurality of trench metal-oxide-semiconductor field effect transistors (MOSFET) devices formed within an epitaxial layer of a substrate, and a...
US20110121386 Trench MOSFET with trenched floating gates as termination  
A trench MOSFET comprising a plurality of transistor cells with a plurality of wide trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal...
US20120319199 Trench Gated Power Device With Multiple Trench Width and its Fabrication Process  
Power devices, and related process, where both gate and field plate trenches have multiple stepped widths, using self-aligned process steps.
US20130234244 Dummy Structure for Multiple Gate Dielectric Interface and Methods  
Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure...
US20150194894 TRENCH MOSFET HAVING AN INDEPENDENT COUPLED ELEMENT IN A TRENCH  
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive...
US20140077778 TRENCH MOSFET HAVING AN INDEPENDENT COUPLED ELEMENT IN A TRENCH  
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive...
US20130049109 Metal Gate Structure  
A metal gate structure comprises a metal layer partially filling a trench of the metal gate structure. The metal layer comprises a first metal sidewall, a second metal sidewall and a metal bottom...
US20140353748 FIELD EFFECT TRANSISTOR, TERMINATION STRUCTURE AND ASSOCIATED METHOD FOR MANUFACTURING  
A field effect transistor (“FET”), a termination structure and associated method for manufacturing. The FET has a plurality of active transistor cells and a termination structure. The termination...
US20140239388 TERMINATION TRENCH FOR POWER MOSFET APPLICATIONS  
Aspects of the present disclosure describe a termination structure for a power MOSFET device. A termination trench may be formed into a semiconductor material and may encircle an active area of...
US20130313636 TERMINATION ARRANGEMENT FOR VERTICAL MOSFET  
Representative implementations of devices and techniques provide a termination arrangement for a transistor structure. The periphery of a transistor structure may include a recessed area having...
US20140070310 INTEGRATION OF TRENCH MOS WITH LOW VOLTAGE INTEGRATED CIRCUITS  
A high voltage trench MOS and its integration with low voltage integrated circuits. Embodiments include forming a first trench in a substrate, the first trench having a first width; forming a...
US20150228656 REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL  
An eDRAM is fabricated including high performance logic transistor technology and ultra low leakage DRAM transistor technology. Embodiments include forming a recessed channel in a substrate,...
US20130292761 TRENCH POWER MOSFET AND FABRICATION METHOD THEREOF  
An exemplary embodiment of the present disclosure illustrates a trench power MOSFET which includes a base, a plurality of first trenches, and a plurality of second trenches. The base has an active...
US20080142883 Power Transistor with Trench Sinker for Contacting the Backside  
A power transistor includes a first semiconductor region of a first conductivity type extending over and in contact with a second semiconductor region of the first conductivity type. Gate trenches...
US20090315106 Integrated trench Mosfet and Schottky Rectifier with trench contact structure  
A trench MOSFET in parallel with trench Schottky barrier rectifier is formed on a single substrate. The present invention solves the constrains brought by planar contact of Schottky, for example,...
US20100127323 Trench MOSFET with trench source contact having copper wire bonding  
A trench MOSFET with trench source contact structure having copper wire bonding is disclosed. By employing the proposed structure, die size can be shrunk into 30%˜70% with high cell density, and...
US20140353747 TRENCH GATE MOSFET AND METHOD OF FORMING THE SAME  
A trench gate MOSFET is provided. An N-type epitaxial layer is disposed on an N-type substrate. An N-type source region is disposed in the N-type epitaxial layer. The N-type epitaxial layer has at...
US20130221436 ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN AND A PROCESS OF FORMING THE SAME  
An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface. The electronic device can further include...
US20120018802 Ultra-low-cost three mask layers trench MOSFET and method of manufacture  
An ultra-low-cost three mask layers trench MOSFET and its method of manufacture, wherein the method includes posting a uniform-covering dielectric layer deposition, and then the topography of...
US20140015047 Integrated Circuit Having a Vertical Power MOS Transistor  
An integrated circuit comprises a plurality of lateral devices and quasi vertical devices formed in a same semiconductor die. The quasi vertical devices include two trenches. A first trench is...
US20110278666 Trench MOSFET with integrated Schottky diode in a single cell and method of manufacture  
A trench MOSFET with integrated Schottky diode in a single cell includes a plurality of body regions extending to an epitaxial layer; a first trench extending through one of the body regions and...
US20140346593 SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS  
A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface...
US20130214350 INTEGRATED TRENCH MOSFET WITH TRENCH SCHOTTKY RECTIFIER  
An integrated circuit comprising trench MOSFET having trenched source-body contacts and trench Schottky rectifier having trenched anode contacts is disclosed. By employing the trenched contacts in...
US20140374824 MOSFET WITH INTEGRATED SCHOTTKY DIODE  
Aspects of the present disclosure describe a Schottky structure with two trenches formed in a semiconductor material. The trenches are spaced apart from each other by a mesa. Each trench may have...
US20120080751 MOS DEVICE WITH VARYING CONTACT TRENCH LENGTHS  
A semiconductor device is formed on a semiconductor substrate. The device comprises a drain; an epitaxial layer overlaying the drain; a body disposed in the epitaxial layer, having a body top...
US20150069482 DRAM Arrays, Semiconductor Constructions and DRAM Array Layouts  
Some embodiments include a DRAM array layout. Wordlines extend along a first direction, and bitlines extend along a second direction that crosses the first direction. Cell active material...
US20150084125 MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE  
A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to...
US20100127324 Trench MOSFET with terrace gate and self-aligned source trench contact  
A trench MOSFET with terrace gate is disclosed for self-aligned contact. When refilling the gate trenches, the deposited polysilicon layer is higher than the sidewalls of the trenches to be used...
US20150108569 METHOD OF FORMING A SEMICONDUCTOR DEVICE INCLUDING TRENCH TERMINATION AND TRENCH STRUCTURE THEREFOR  
In an embodiment, a method of forming a semiconductor may include forming a plurality of active trenches and forming a termination trench substantially surrounding an outer periphery of the...
US20120037983 Trench mosfet with integrated schottky rectifier in same cell  
A semiconductor power device comprising a plurality of trench MOSFETs integrated with Schottky rectifier in same cell is disclosed. The invented semiconductor power device comprises a tilt-angle...
US20080054354 PHOTO MASK, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE SAME  
A photo mask, a semiconductor integrated circuit, and a method of manufacturing the same are provided. The photo mask includes light transmitting rows and recess trenches, respectively, that...
US20090206913 Edge Termination with Improved Breakdown Voltage  
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an...
US20130175612 DUAL GATE OXIDE TRENCH MOSFET WITH CHANNEL STOP TRENCH  
A semiconductor device and fabrication methods are disclosed. The device includes a plurality of gate electrodes formed in trenches located in an active region of a semiconductor substrate. A...
US20130001683 FLEXIBLE CRSS ADJUSTMENT IN A SGT MOSFET TO SMOOTH WAVEFORMS AND TO AVOID EMI IN DC-DC APPLICATION  
A semiconductor power device comprises a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein the trenched gate comprising a shielding bottom electrode...
US20140339630 DEVICE STRUCTURE AND METHODS OF MAKING HIGH DENSITY MOSFETS FOR LOAD SWITCH AND DC-DC APPLICATIONS  
Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The source contacts are self-aligned...
US20150076594 SUPER-JUNCTION STRUCTURES HAVING IMPLANTED REGIONS SURROUNDING AN N EPITAXIAL LAYER IN DEEP TRENCH  
A super junction structure having implanted column regions surrounding an N epitaxial layer in a deep trench is disclosed to overcome charge imbalance problem and to further reduce Rds. The...
US20140319606 SHIELDED GATE TRENCH (SGT) MOSFET DEVICES AND MANUFACTURING PROCESSES  
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells...
US20110204440 Shielded gate trench (SGT) mosfet devices and manufacturing processes  
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells...
US20140264574 ELECTRONIC DEVICE INCLUDING VERTICAL CONDUCTIVE REGIONS AND A PROCESS OF FORMING THE SAME  
An electronic device can include different vertical conductive structures that can be formed at different times. The vertical conductive structures can have the same or different shapes. In an...
US20100264488 Low Qgd trench MOSFET integrated with schottky rectifier  
An integrated circuit includes a plurality of trench MOSFET and a plurality of trench Schottky rectifier. The integrated circuit further comprises: tilt-angle implanted body dopant regions...
US20090294846 TRENCH-TYPE POWER MOS TRANSISTOR AND INTEGRATED CIRCUIT UTILIZING THE SAME  
A power MOS transistor comprises a drain region, a trench gate, a source region, a well region, a deep well region and a substrate region. The drain region has a doping region of a first...
US20130328122 SPLIT TRENCH-GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE  
A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a...
US20100155838 TRENCH TYPE MOSFET DEVICE AND METHOD OF MANUFACTURING THE SAME  
A trench type Metal Oxide Silicon Field Effect Transistor (MOSFET) device and a method of manufacturing a trench type MOSFET device. A trench type MOSFET device may include a wide-trench source...
US20090127619 DEEP TRENCH SEMICONDUCTOR STRUCTURE AND METHOD  
An electrical structure and method of forming. The electrical structure includes a semiconductor substrate comprising a deep trench, an oxide liner layer is formed over an exterior surface of the...