Matches 1 - 50 out of 281 1 2 3 4 5 6 >


Match Document Document Title
US20150061002 TRENCH MOSFET AND METHOD FOR FABRICATING THE SAME  
The present disclosure relates to a trench MOSFET and a method for fabricating the same. The method comprises: providing a substrate with an epitaxy layer; forming a trench in the epitaxy layer;...
US20120235230 MOSFET DEVICE WITH THICK TRENCH BOTTOM OXIDE  
In one general aspect, an apparatus can include a first trench oxide disposed within a first trench of an epitaxial layer and having a trench bottom oxide disposed below a gate portion of the...
US20090085107 Trench MOSFET with thick bottom oxide tub  
A semiconductor power device includes a plurality of trenched gates. The trenched gates include a thin dielectric layer padded sidewalls of the trenched gate and a tub-shaped thick dielectric...
US20110215399 P-CHANNEL POWER MOSFET  
In characteristic test measurements of double-gate-in-trench p-channel power MOSFETs each having a p+ polysilicon gate electrode and a p+ field plate electrode in a trench, which were fabricated...
US20110284954 LOW Qgd TRENCH MOSFET INTEGRATED WITH SCHOTTKY RECTIFIER  
An integrated circuit includes a plurality of trench MOSFET and a plurality of trench Schottky rectifier. The integrated circuit further comprises: tilt-angle implanted body dopant regions...
US20120205737 SHIELDED GATE TRENCH MOSFET DEVICE AND FABRICATION  
A semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner...
US20130307066 TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION  
A semiconductor power device with trenched floating gates having thick bottom oxide as termination is disclosed. The gate charge is reduced by forming a HDP oxide layer padded by a thermal oxide...
US20120292694 HIGH SWITCHING TRENCH MOSFET  
A shielded gate trench metal oxide semiconductor filed effect transistor (MOSFET) having high switching speed is disclosed. The inventive shielded gate trench MOSFET includes a shielded electrode...
US20120161229 DRAM CELL UTILIZING A DOUBLY GATED VERTICAL CHANNEL  
A double-gate vertical channel transistor (DGVC) structure is described which is particularly well suited for Dynamic RAM (DRAM) memory (e.g., capacitorless DRAM) wherein the memory cell occupies...
US20150263166 ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN  
An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface. The electronic device can further include...
US20120187477 SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS  
A super-junction trench MOSFET with split gate electrodes is disclosed for high voltage device by applying multiple trenched source-body contacts with narrow CDs in unit cell. Furthermore, source...
US20150097232 DUAL GATE OXIDE TRENCH MOSFET WITH CHANNEL STOP TRENCH  
A semiconductor device has a plurality of gate electrodes over a gate insulator layer formed in active trenches located in an active region of a semiconductor substrate. A first gate runner is...
US20150048446 REDUCTION OF OXIDE RECESSES FOR GATE HEIGHT CONTROL  
An intermediate semiconductor structure in fabrication includes a substrate. A plurality of gate structures is disposed over the substrate, with at least two of the gate structures separated by a...
US20130105890 VERTICAL NON-DYNAMIC RAM STRUCTURE  
A vertical non-dynamic RAM structure comprises a substrate, at least one bit line arranged on the substrate, a plurality of pillars spaced from each other and formed on the bit line with a...
US20110156139 Super-Junction trench mosfet with resurf step oxide and the method to make the same  
A super-junction trench MOSFET with Resurf Stepped Oxide is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick...
US20100090274 TRENCH MOSFET WITH SHALLOW TRENCH CONTACT  
A trench MOSFET element with shallow trench contact is disclosed. This shallow trench contact structure has some advantages: blocking the P+ underneath trench contact from lateral diffusion to not...
US20140159149 SHORT CHANNEL TRENCH MOSFETS  
A trench MOSFET with a short channel length is disclosed for reducing channel resistance, wherein at least one field relief region is formed underneath the body region in an epitaxial layer...
US20140008720 INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME HAVING A REPLACEMENT GATE STRUCTURE  
A method for fabricating an integrated circuit includes forming a first layer of a workfunction material in a first trench of a plurality of trench structures formed over a silicon substrate, the...
US20150221733 TRENCH MOSFET WITH SELF-ALIGNED SOURCE AND CONTACT REGIONS USING THREE MASKS PROCESS  
A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein source regions are formed by performing source Ion Implantation through...
US20080191273 MOSFET DEVICE HAVING IMPROVED AVALANCHE CAPABILITY  
A power MOSFET that includes deep source field electrodes, the power MOSFET including one trench that includes an insulated gate and another trench that does not include an insulated gate, both...
US20110284953 POWER TRENCH MOSFET RECTIFIER  
A trench MOSFET rectifier includes oxide layers having different thicknesses formed in different regions of the devices. The rectifying device also includes a source region of first conductivity...
US20110298045 SELF-ALIGNED CONTACT FOR TRENCH MOSFET  
The process methods and structures mentioned above for creating a trench MOSFET enables self-aligned contacts to be formed to allow decreasing pitch size for trench MOSFET. The self-aligned...
US20110089488 Power Device with Improved Edge Termination  
A field effect transistor includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of...
US20120068261 Replacement Metal Gate Structures for Effective Work Function Control  
A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric...
US20110037120 Shielded gate trench MOSFET device and fabrication  
A semiconductor device embodiment includes a substrate, an active gate trench in the substrate, and an asymmetric trench in the substrate. The asymmetric trench has a first trench wall and a...
US20080225588 Capacitorless DRAM and method of manufacturing and operating the same  
Provided are a capacitorless dynamic random access memory (DRAM) and a method of manufacturing and operating the capacitorless DRAM. The capacitorless DRAM includes a substrate having a first...
US20120161228 VERTICAL TRANSISTOR STRUCTURE  
A vertical transistor structure includes a substrate, a source, a first gate, a first insulating layer, a second gate, a gate insulating layer, a drain, a second insulating layer, and a...
US20100096693 SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes a substrate; a plurality of active pillars formed over the substrate; bulb-type trenches, each of the bulb-type trenches formed inside the substrate between the...
US20120080748 TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS  
A trench MOSFET with short channel length and super pinch-off regions is disclosed, wherein the super pinch-off regions are implemented by forming at least two type pinch-off regions for...
US20100176445 Metal schemes of trench MOSFET for copper bonding  
A trench MOSFET with improved metal schemes is disclosed. The improved contact structure applies a buffer layer to minimize the bonding damage to semiconductor when bonding copper wire upon front...
US20090008709 Power Semiconductor Devices with Trenched Shielded Split Gate Transistor and Methods of Manufacture  
A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first...
US20120153384 Semiconductor Power Device Having A Top-side Drain Using A Sinker Trench  
A semiconductor package device houses a die which comprises a power device, and the die further includes a silicon region over a substrate, a first plurality of trenches extending in the silicon...
US20090020810 Method of Forming Power Device Utilizing Chemical Mechanical Planarization  
A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in...
US20080246081 Self-Aligned Trench MOSFET and Method of Manufacture  
A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a...
US20120061754 SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND SPLIT GATE ELECTRODES  
A super-junction trench MOSFET with Resurf Stepped Oxide and split gate electrodes is disclosed. The inventive structure can apply additional freedom for better optimization of device performance...
US20120267711 MULTI-LEVEL OPTIONS FOR POWER MOSFETS  
This document discusses, among other things, a semiconductor device including first and second conductive layers, the first conductive layer including a gate runner and a drain contact and the...
US20140054691 FIELD EFFECT TRANSISTOR WITH GATED AND NON-GATED TRENCHES  
A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and...
US20100072544 METHOD OF FORMING AN MOS TRANSISTOR AND STRUCTURE THEREFOR  
In one embodiment, an MOS transistor is formed to have an active region and a termination region. Within the termination region a plurality of conductors are formed to make electrical contact to...
US20060267085 Trech-type vertical semiconductor device having gate electrode buried in rounded hump opening  
In a semiconductor device including a gate electrode buried in a trench of the device, the trench is constructed by a first opening with a uniform width the same as that of an upper portion of the...
US20090096019 MOSGATED POWER SEMICONDUCTOR DEVICE WITH SOURCE FIELD ELECTRODE  
A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode...
US20080315301 Trench Gate Power Semiconductor Device  
A trench gate power MOSFET (1) includes: an n−-type epitaxial layer (12); a p-type body region (20) formed in the vicinity of an upper surface of the n−-type epitaxial layer (12); a plurality of...
US20140217498 RECESSED ACCESS DEVICES AND GATE ELECTRODES  
Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each...
US20080035991 Transistor Having Recess Channel Structure and Fin Structure, Semiconductor Device Employing the Transistor, and Method of Fabricating the Semiconductor Device  
A semiconductor device includes an upper gate trench crossing an active region of a semiconductor substrate, a lower gate trench overlapping the upper gate trench at both ends, disposed at a lower...
US20120326229 Trench Transistor and Manufacturing Method of the Trench Transistor  
A semiconductor device includes a semiconductor body including a first surface and a second surface. The semiconductor device further includes a trench structure extending into the semiconductor...
US20080179668 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET  
This invention discloses a trenched metal oxide semiconductor field effect transistor (MOSFET) cell. The trenched MOSFET cell includes a trenched gate opened from a top surface of the...
US20090206400 SYSTEMS AND DEVICES INCLUDING FIN TRANSISTORS AND METHODS OF USING, MAKING, AND OPERATING THE SAME  
Disclosed are methods, systems and devices, including a system, having a memory device. In some embodiments, the memory device includes a plurality of fin field-effect transistors disposed in...
US20100096694 PLANAR EXTENDED DRAIN TRANSISTOR AND METHOD OF PRODUCING THE SAME  
A planar extended drain transistor (100) is provided which comprises a control gate (102), a drain region (109), a channel region (107), and a drift region (108), wherein the drift region (108) is...
US20090315105 High-voltage vertical transistor structure  
In one embodiment, a transistor includes a pillar of semiconductor material arranged in a racetrack-shaped layout having a substantially linear section that extends in a first lateral direction...
US20090236658 ARRAY OF VERTICAL TRIGATE TRANSISTORS AND METHOD OF PRODUCTION  
An array of vertical trigate transistors and method of production are disclosed. One embodiment provides an array of selection transistors for selecting one of a plurality of memory cells. A...
US20140319605 NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL P-BODY CONTACT  
A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a...

Matches 1 - 50 out of 281 1 2 3 4 5 6 >