Matches 1 - 50 out of 259 1 2 3 4 5 6 >


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US20140197475 POWER MOSFET DEVICE WITH A GATE CONDUCTOR SURROUNDING SOURCE AND DRAIN PILLARS  
A power MOSFET device includes at least one MOSFET unit disposed over a substrate, wherein the MOSFET unit includes a plurality of cells and a boundary surrounding the cells. In one embodiment of...
US20120228695 LDMOS WITH IMPROVED BREAKDOWN VOLTAGE  
An LDMOS is formed with a field plate over the n− drift region, coplanar with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first...
US20110156679 INTEGRATED TRENCH GUARDED SCHOTTKY DIODE COMPATIBLE WITH POWERDIE, STRUCTURE AND METHOD  
A method and structure for a voltage converter including a trench field effect transistor (FET) and a trench guarded Schottky diode which is integrated with the trench FET. In an embodiment, a...
US20140175536 HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CONTACTS AND METHOD FOR MAKING SUCH DEVICES  
Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a...
US20110089481 MOS TRANSISTOR WITH ELEVATED GATE DRAIN CAPACITY  
A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source...
US20140077287 BREAKDOWN VOLTAGE BLOCKING DEVICE  
In one embodiment, a breakdown voltage blocking device can include an epitaxial region located above a substrate and a plurality of source trenches formed in the epitaxial region. Each source...
US20070034941 Deep N diffusion for trench IGBT  
An increased conductivity deep diffusion of the same conductivity type as that of the drift region is provided between adjacent trenches of a trench type IGBT and below the trenches to reduce the...
US20110018054 Method for Preventing Gate Oxide Damage of a Trench MOSFET during Wafer Processing while Adding an ESD Protection Module Atop  
A method and device structure are disclosed for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET. The ESD...
US20050077553 Methods of forming multi fin FETs using sacrificial fins and devices so formed  
Methods of forming multi fin Field Effect Transistors (FET) can include forming a first fin having opposing sidewalls protruding from a substrate and epitaxially growing second fins on the...
US20050263817 Transistor comprising fill areas in the source drain and/or drain region  
A transistor contains a source region and a drain region. Two or more fill areas are formed such that the fill areas and the source and/or drain region engage in one another. The fill areas have...
US20080258208 SEMICONDUCTOR COMPONENT INCLUDING COMPENSATION ZONES AND DISCHARGE STRUCTURES FOR THE COMPENSATION ZONES  
A semiconductor component including compensation zones and discharge structures for the compensation zones. One embodiment provides a drift zone of a first conduction type, at least one...
US20090189216 SEMICONDUCTOR COMPONENT INCLUDING A DRIFT ZONE AND A DRIFT CONTROL ZONE  
Semiconductor component including a drift region and a drift control region. One embodiment provides a drift zone and a drift control zone. A drift control zone dielectric is arranged between the...
US20130307055 ELECTRONIC DEVICE COMPRISING RF-LDMOS TRANSISTOR HAVING IMPROVED RUGGEDNESS  
The invention relates to an electronic device comprising an RF-LDMOS transistor (1) and a protection circuit (2) for the RF-LDMOS transistor. The protection circuit (2) comprises: i) an input...
US20090039419 SEMICONDUCTOR COMPONENT WITH DYNAMIC BEHAVIOR  
One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the...
US20080283908 LATERAL DMOS DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF  
A lateral DMOS device having a structure that prevents breakdown of a semiconductor device while enhancing the breakdown voltage property. The lateral DMOS device can include a body diode region...
US20080246055 SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD  
A semiconductor component comprising a monocrystalline semiconductor body, and to a method for producing the same is disclosed. In one embodiment, the semiconductor body has a semiconductor...
US20070052012 Vertical tunneling nano-wire transistor  
A vertical nano-wire transistor is formed on a substrate out of a vertical pillar having active regions of opposing conductivity in opposite ends of the pillar. In one embodiment, the source...
US20100090269 TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN  
A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device....
US20130341705 SCHOTTKY DIODE INTEGRATED INTO LDMOS  
In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.
US20080128798 SEMICONDUCTOR COMPONENT WITH IMPROVED ROBUSTNESS  
One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the...
US20090114980 SEMICONDUCTOR DEVICE HAVING VERTICAL AND HORIZONTAL TYPE GATES AND METHOD FOR FABRICATING THE SAME  
A semiconductor device having both vertical and horizontal type gates and a method for fabricating the same for obtaining high integration of the semiconductor device and integration with other...
US20140217495 Integrated Circuit with Power and Sense Transistors  
An integrated circuit may include a semiconductor portion with a power transistor including first gate trenches that cross a first region and a sense transistor including second gate trenches that...
US20150115351 Integrated Circuit and Method of Manufacturing an Integrated Circuit  
An integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate...
US20100078708 MOS TRANSISTOR HAVING AN INCREASED GATE-DRAIN CAPACITANCE  
A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source...
US20090090966 HIGH DENSITY FET WITH INTEGRATED SCHOTTKY  
A semiconductor structure includes a monolithically integrated trench FET and Schottky diode. The semiconductor structure further includes a plurality of trenches extending into a semiconductor...
US20130020632 LATERAL TRANSISTOR WITH CAPACITIVELY DEPLETED DRIFT REGION  
A lateral transistor includes a gate formed over a gate oxide and a field plate formed over a thick gate oxide. The field plate is electrically connected to a source. The field plate is configured...
US20100327342 TRANSIENT OVER-VOLTAGE CLAMP  
In various embodiments, the invention relates to semiconductor structures, such as planar MOS structures, suitable as voltage clamp devices. Additional doped regions formed in the structures may...
US20120280307 INTEGRATING SCHOTTKY DIODE INTO POWER MOSFET  
A semiconductor device includes a plurality of trenches including active gate trenches in an active area and gate runner/termination trenches and shield electrode pickup trenches in a termination...
US20090026530 METHODS OF FABRICATING DUAL FIN STRUCTURES AND SEMICONDUCTOR DEVICE STRUCTURES WITH DUAL FINS  
Fin-FET (fin field effect transistor) devices and methods of fabrication are disclosed. The Fin-FET devices include dual fin structures that may form a channel region between a source region and a...
US20080128797 STRUCTURE AND METHOD FOR MULTIPLE HEIGHT FINFET DEVICES  
Multiple finFETs containing semiconductor fins with the same height for the top but with different heights for the bottom are formed. Patterned oxygen implant masks are used to form a buried oxide...
US20100032749 Field-Effect Device and Manufacturing Method Thereof  
Embodiments relate to a field-effect transistor that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region of the first conductivity type,...
US20100224931 TRENCH MOSEFT WITH TRENCH GATES UNDERNEATH CONTACT AREAS OF ESD DIODE FOR PREVENTION OF GATE AND SOURCE SHORTAGE  
A trench DMOS transistor employing trench contacts has overvoltage protection for prevention of shortage between gate and source, comprising a plurality of first-type function trenched gates, at...
US20140092506 Extended Drain Non-planar MOSFETs for Electrostatic Discharge (ESD) Protection  
Snapback ESD protection device employing one or more non-planar metal-oxide-semiconductor transistors (MOSFETs) are described. The ESD protection devices may further include lightly-doped extended...
US20080203470 Lateral compensation component  
A transistor is provided which includes a lateral compensation component. The lateral compensation component includes a plurality of n (or n−) layer/p (or p−) layer pairs, wherein adjacent ones of...
US20050133857 Power semiconductor component having a gentle turn-off behavior  
A vertical semiconductor component having a semiconductor body, which has an inner region and an edge region that is arranged between the inner region and an edge of the semiconductor body. At...
US20130320915 Gated Diode, Battery Charging Assembly and Generator Assembly  
A gated diode may include source zones and a drain zone which are both of a first conductivity type. The source zones directly adjoin a first surface of a semiconductor die and the drain zone...
US20090212354 TRENCH MOSEFT WITH TRENCH GATES UNDERNEATH CONTACT AREAS OF ESD DIODE FOR PREVENTION OF GATE AND SOURCE SHORTATE  
A trench DMOS transistor having overvoltage protection and prevention for shortage between gate and source when contact trenches are applied includes a substrate of a first conductivity type and a...
US20130113036 Transistor Assembly as an ESD Protection Measure  
A diode (23) is arranged near a transistor (25) to protect from ESD. The diode comprises a well (5) of a first conductivity type and a doped region (4) of a second conductivity type in opposition...
US20080179662 Closed trench MOSFET with floating trench rings as termination  
A semiconductor power device includes a plurality of closed N-channel MOSFET cells surrounded by trenched gates constituting substantially a square or rectangular cell. The trenched gates are...
US20070073807 Latch-up free vertical TVS diode array structure using trench isolation  
A method for manufacturing a transient voltage suppressing (TVS) array substantially following a manufacturing process for manufacturing a vertical semiconductor power device. The method includes...
US20050269630 Trench type semiconductor device with reduced Qgd  
A trench type power semiconductor device which includes a buried electrode that is electrically connected to an electrode that can be biased to reach a voltage other than any of the other power...
US20090146154 Transistor with A-Face Conductive Channel and Trench Protecting Well Region  
A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state....
US20130240980 Schottky diode integrated into LDMOS  
In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by blocking the formation of one or more n+ source regions and providing a...
US20060049452 Novel LDMOS IC technology with low threshold voltage  
A lateral double diffused metal oxide semiconductor (LDMOS) device includes forming a plurality of wells on a semiconductor substrate. The plurality of wells include a first well of a first type,...
US20080121988 Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter  
A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are...
US20090045457 Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)  
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main Zener diode for...
US20100155830 ELECTRONIC SWITCHING DEVICE  
An integrated switching device has a switching IGFET connected between a pair of main terminals, a protector IGFET connected between the drain and gate electrodes of the switching IGFET, and a...
US20130299872 TRENCH POLY ESD FORMATION FOR TRENCH MOS AND SGT  
A semiconductor device includes a semiconductor material disposed in a trench with polysilicon lining at least the bottom of the trench. The semiconductor material includes differently doped...
US20070176229 INTEGRATED CIRCUIT HAVING COMPENSATION COMPONENT  
An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order...
US20080121987 Nanodot and nanowire based MOSFET structures and fabrication processes  
Novel nanodot and nanowire based MOSFET device structures and their fabrication processes are invented. These devices can be fabricated with the processes that do not need the extremely high...

Matches 1 - 50 out of 259 1 2 3 4 5 6 >