Matches 1 - 50 out of 173 1 2 3 4 >


Match Document Document Title
US20110001176 SELF-ALIGNMENT INSULATION STRUCTURE  
An insulation structure is provided. The insulation structure includes a deep trench filled with silicon and disposed in a substrate, a first oxide layer serving as the insulation structure and...
US20070235786 Storage capacitor and method for producing such a storage capacitor  
A storage capacitor, particularly for use in a storage cell, exhibits two storage electrodes and a dielectric arranged between the two storage electrodes, an intermediate layer essentially...
US20090014767 CARBON NANOTUBE CONDUCTOR FOR TRENCH CAPACITORS  
A trench-type storage device includes a trench in a substrate (100), with bundles of carbon nanotubes (202) lining the trench and a trench conductor (300) filling the trench. A trench dielectric...
US20070267671 TRENCH CAPACITOR HAVING LATERAL EXTENSIONS IN ONLY ONE DIRECTION AND RELATED METHODS  
A trench capacitor and related methods are disclosed including a trench having lateral extensions extending in only one direction from the trench filled with a capacitor material. In one...
US20130032868 TRENCH CAPACITOR WITH SPACER-LESS FABRICATION PROCESS  
A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI...
US20080246068 TRENCH CAPACITORS AND MEMORY CELLS USING TRENCH CAPACITORS  
A trench structure, a method of forming the trench structure, a memory cell using the trench structure and a method of forming a memory cell using the trench structure. The trench structure...
US20050275006 [MULTI-GATE DRAM WITH DEEP-TRENCH CAPACITOR AND FABRICATION THEREOF]  
A multi-gate DRAM cell is described, including a multi-gate transistor and a deep trench capacitor. The transistor includes a semiconductor pillar, a multi-gate, a gate dielectric layer, a first...
US20070090436 DEEP TRENCH CAPACITOR  
A deep trench capacitor disposed in a deep trench in a substrate is provided. The deep trench capacitor includes a bottom electrode disposed in the substrate surrounding a bottom of the deep...
US20140167069 SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN POWER TRANSISTORS AND OTHER DEVICES  
Embodiments relate to bootstrap circuits integrated with at least one other device, such as a power transistor or other semiconductor device. In embodiments, the bootstrap circuit can comprise a...
US20050095801 Trench capacitor and method of manufacturing the same  
A trench capacitor comprises a semiconductor substrate, a trench provided in the semiconductor substrate, a first doped polysilicon filled in the trench at a lower end of the trench via a first...
US20150221715 DEEP TRENCH CAPACITOR  
A deep trench capacitor structure including an SOI substrate comprising an SOI layer, a rare earth oxide layer, and a bulk substrate, the rare earth oxide layer is located below the SOI layer and...
US20060086958 Wire structure, semiconductor device, MRAM, and manufacturing method of semiconductor device  
The present invention provides a wire structure where reduction in the amount of current that can be made to flow through the wire can be suppressed (a current comprising a large current density...
US20130092992 REPLACEMENT GATE MULTIGATE TRANSISTOR FOR EMBEDDED DRAM  
A memory cell, an array of memory cells, and a method for fabricating a memory cell with multigate transistors such as fully depleted finFET or nano-wire transistors in embedded DRAM. The memory...
US20090302366 STRUCTURE AND DESIGN STRUCTURE HAVING ISOLATED BACK GATES FOR FULLY DEPLETED SOI DEVICES  
Methods, structure and design structure having isolated back gates for fully depleted semiconductor-on-insulator (FDSOI) devices are presented. In one embodiment, a method may include providing a...
US20070090433 Isolation collar void and methods of forming the same  
In a first aspect, a first apparatus is provided. The first apparatus includes a void formed around one or more portions of a microelectronic device in a bulk substrate. The void is adapted to...
US20090101957 SIMPLIFIED METHOD OF FABRICATING ISOLATED AND MERGED TRENCH CAPACITORS  
Trench capacitors having small and large sizes can be formed simultaneously using a combined lithography process in which openings in a photomask have the same dimensions and spacings. Larger...
US20120211814 TRENCH STRUCTURE AND METHOD OF FORMING THE TRENCH STRUCTURE  
Disclosed are embodiments of an improved deep trench capacitor structure and memory device that incorporates this deep trench capacitor structure. The deep trench capacitor and memory device...
US20050110066 Deep trench structure and memory device having the same  
Disclosed is a deep trench structure for a semiconductor memory device. The deep trench in accordance with the present invention has a cross section communicating with two difference active areas,...
US20060134877 Method for fabricating a buried conductive connection to a trench capacitor and a memory cell with such a connection  
A buried conductive connection to a trench capacitor is formed in such a way that a contact area is provided between a conductive material layer which is arranged in the trench of the trench...
US20090184356 DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUDING BURIED STRAP  
A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that...
US20060289919 Two-sided surround access transistor for a 4.5F2 DRAM cell  
An isolation transistor having a grounded gate is formed between a first access transistor construction and a second access transistor construction to provide isolation between the access...
US20070063243 Structure Of Embedded Capacitors And Fabrication Method Thereof  
A new structure is provided to replace the existing common planar capacitor structure used in printed circuit boards. The conventional common planar capacitor structure utilizes a single...
US20120132974 INTEGRATED CIRCUIT STRUCTURES WITH SILICON GERMANIUM FILM INCORPORATED AS LOCAL INTERCONNECT AND/OR CONTACT  
Disclosed are integrated circuit structures each having a silicon germanium film incorporated as a local interconnect and/or an electrical contact. These integrated circuit structures provide...
US20110169131 DEEP TRENCH DECOUPLING CAPACITOR  
Solutions for forming a silicided deep trench decoupling capacitor are disclosed. In one aspect, a semiconductor structure includes a trench capacitor within a silicon substrate, the trench...
US20070034927 Trench storage capacitor  
A trench storage capacitor includes a buried plate that is lengthened by a doped silicon layer to right over the collar insulating layer. The conductor layer of the trench storage capacitor is...
US20080265299 Strained channel dynamic random access memory devices  
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
US20090108314 Embedded DRAM Integrated Circuits With Extremely Thin Silicon-On-Insulator Pass Transistors  
Integrated circuits having combined memory and logic functions are provided. In one aspect, an integrated circuit is provided. The integrated circuit comprises: a substrate comprising a silicon...
US20080277709 DRAM STRUCTURE  
A DRAM structure includes a substrate, a MOS transistor, a deep trench capacitor, a surface strap positioned on the surface of the substrate and interconnecting a drain of the MOS transistor and...
US20050205917 Trench capacitor having an insulation collar and corresponding fabrication method  
The present invention provides a trench capacitor, in particular for use in a semiconductor memory cell, having a trench (5) formed in a semiconductor substrate (1); an insulation collar (3) in...
US20070012983 Terminations for semiconductor devices with floating vertical series capacitive structures  
This invention relates to achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing...
US20090289291 SOI DEEP TRENCH CAPACITOR EMPLOYING A NON-CONFORMAL INNER SPACER  
A bottle shaped trench for an SOI capacitor is formed by a simple processing sequence. A non-conformal dielectric layer with an optional conformal dielectric diffusion barrier layer underneath is...
US20070057304 Capacitor structure, memory cell and method for forming a capacitor structure  
The present invention refers to a trench capacitor structure as it is used in memory cells, for example in memory cells of memory devices. Particularly, the capacitor structure may be used in a...
US20120205732 INTEGRATED CIRCUITS COMPRISING AN ACTIVE TRANSISTOR ELECTRICALLY CONNECTED TO A TRENCH CAPACITOR BY AN OVERLYING CONTACT  
An integrated circuit includes an active transistor laterally adjacent to a trench capacitor formed in a semiconductor substrate, the active transistor comprising a source junction and a drain...
US20050184326 DEEP-TRENCH 1T-SRAM WITH BURIED OUT DIFFUSION WELL MERGED WITH AN ION IMPLANTATION WELL  
A deep-trench 1T-SRAM memory cell is disclosed. The deep-trench 1T-SRAM memory cell includes a first conductivity type semiconductor substrate with a main surface. A second conductivity type ion...
US20090250738 SIMULTANEOUS BURIED STRAP AND BURIED CONTACT VIA FORMATION FOR SOI DEEP TRENCH CAPACITOR  
A node dielectric, an inner electrode, and a buried strap cavity are formed in the deep trench in an SOI substrate. A buried layer contact cavity is formed by lithographic methods. The buried...
US20090032855 METHOD FOR FORMING A DEEP TRENCH IN AN SOI DEVICE BY REDUCING THE SHIELDING EFFECT OF THE ACTIVE LAYER DURING THE DEEP TRENCH ETCH PROCESS  
By providing a conductive connection between the active semiconductor layer and the substrate material in an SOI device during the anisotropic etch process for forming a deep trench portion in the...
US20070290248 Manufacturing method for an integrated semiconductor structure and corresponding semiconductor structure  
The present invention provides a manufacturing method for an integrated semiconductor structure and a corresponding semiconductor structure. The method comprises the steps of: providing a...
US20090095998 DEEP TRENCH CAPACITOR AND METHOD  
Disclosed herein are embodiments of a deep trench capacitor structure and a method of forming the structure that incorporates a buried capacitor plate contact that is simultaneously formed using...
US20080283891 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF  
A semiconductor structure comprises a first wafer and a second wafer, between which a glue layer can be used for combination. The first wafer comprises a first semiconductor cell structure, and a...
US20120139022 1T MIM MEMORY FOR EMBEDDED RAM APPLICATION IN SOC  
Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises...
US20090166701 One transistor/one capacitor dynamic random access memory (1T/1C DRAM) cell  
In general, in one aspect, a method includes forming a semiconductor fin. A first insulating layer is formed adjacent to the semiconductor fin. A second insulating layer is formed over the first...
US20120025288 SOI Trench DRAM Structure With Backside Strap  
In one exemplary embodiment, a semiconductor structure including: a silicon-on-insulator substrate having of a top silicon layer overlying an insulation layer, where the insulation layer overlies...
US20080067568 Capacitor with hemispherical silicon-germanium grains and a method for making the same  
A method of forming hemispherical silicon-germanium grains within a capacitor which includes providing the semiconductor substrate and forming the capacitor surface in the substrate is provided....
US20080035977 INTEGRATED CIRCUIT (IC) WITH HIGH-Q ON-CHIP DISCRETE CAPACITORS  
A semiconductor structure that may be a discrete capacitor, a Silicon On Insulator (SOI) Integrated Circuit (IC) including circuits with discrete such capacitors and/or decoupled by such discrete...
US20060054959 Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same  
A capacitor structure includes: a number of conductive regions of metallic and/or semiconducting materials and/or conductive metal compounds thereof, the conductive regions being arranged as...
US20140264523 ELECTRONIC DEVICE INCLUDING A CAPACITOR STRUCTURE AND A PROCESS OF FORMING THE SAME  
An electronic device can include a capacitor structure. In an embodiment, the electronic device can include a buried conductive region, a semiconductor layer having a primary surface, a...
US20120187465 ENHANCED CAPACITANCE TRENCH CAPACITOR  
An integrated circuit including a trench capacitor has a semiconductor region in which a material composition varies in a quantity of at least one component therein such that the quantity...
US20090242954 MEMORY DEVICE AND FABRICATION THEREOF  
The invention is related to a memory device, including a substrate, a capacitor which is substantially C-shaped in a cross section parallel to the substrate surface and a word line coupling the...
US20140054664 POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH  
A method of forming a trench structure that includes forming a metal containing layer on at least the sidewalls of a trench, and forming an undoped semiconductor fill material within the trench....
US20130134491 POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH  
A method of forming a trench structure that includes forming a metal containing layer on at least the sidewalls of a trench, and forming an undoped semiconductor fill material within the trench....

Matches 1 - 50 out of 173 1 2 3 4 >