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US20110038093 TURNABLE CAPACITOR AND SWITCH USING MEMS WITH PHASE CHANGE MATERIAL  
The present invention relates to a MEMS, being developed for e.g. a mobile communication application, such as switch, tunable capacitor, tunable filter, phase shifter, multiplexer, voltage...
US20080149909 Pillar phase change memory cell  
A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location...
US20110168966 DEPOSITION OF AMORPHOUS PHASE CHANGE MATERIAL  
A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous...
US20050127349 Phase change tip storage cell  
A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes...
US20090078924 Phase Change Memory with Various Grain Sizes  
A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The...
US20120049144 Post-Fabrication Self-Aligned Initialization of Integrated Devices  
Creating a localized region of material having a target chemical composition by defining an electrical circuit on a substrate, and depositing on the electrical circuit one or more layers of...
US20090166601 Non-volatile programmable variable resistance element  
A phase-change memory element exhibits a non-uniform temperature profile in the phase-change material, resulting in a non-uniform temperature profile. The non-uniform temperature profile causes...
US20130001500 PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR  
A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure;...
US20110186800 PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR  
A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure;...
US20150076435 STORAGE DEVICE  
According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal...
US20110057162 IN VIA FORMED PHASE CHANGE MEMORY CELL WITH RECESSED PILLAR HEATER  
A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact...
US20110001111 THERMALLY INSULATED PHASE CHANGE MATERIAL CELLS  
A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom...
US20070228354 Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse  
A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the...
US20110210307 CHEMICAL MECHANICAL POLISHING STOP LAYER FOR FULLY AMORPHOUS PHASE CHANGE MEMORY PORE CELL  
A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a dielectric layer on the bottom electrode, and forming a sacrificial layer on the...
US20140312292 MEMRISTORS AND METHODS OF FABRICATION  
Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material....
US20090303784 Asymetric threshold three terminal switching device  
An asymmetric-threshold three-terminal electronic switching device includes three terminals coupled to a threshold-switching material. A signal applied across first and second terminals affects an...
US20100044669 INTEGRATED CIRCUIT INCLUDING MEMORY CELL HAVING CUP-SHAPED ELECTRODE INTERFACE  
An integrated circuit includes a first electrode and a cup-shaped electrode interface coupled to the first electrode. The integrated circuit includes a dielectric spacer at least partially...
US20070040159 Manufacturing method and structure for improving the characteristics of phase change memory  
A manufacturing method and structure for better phase change memory characteristics by improving the interface and the hole-filling properties. The present invention can reduce the power...
US20130292628 OXIDE BASED MEMORY WITH A CONTROLLED OXYGEN VACANCY CONDUCTION PATH  
Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first...
US20080067486 RING HEATER FOR A PHASE CHANGE MEMORY DEVICE  
A ring shaped heater surrounds a chalcogenide region along the length of a cylindrical solid phase portion thereof defining a change phase memory element. The chalcogenide region is formed in a...
US20080093589 Resistance variable devices with controllable channels  
A memory element having a first electrode is provided, wherein the first electrode comprises at least one conductive nanostructure. The memory element further includes a second electrode and a...
US20090189139 PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR  
A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure;...
US20090146127 PHASE CHANGE MEMORY  
Phase change memories comprising a top electrode, a phase change element, a plurality of via holes allocated between the top electrode and the phase change element, at least four heaters aiming at...
US20130112933 GERMANIUM ANTIMONY TELLURIDE MATERIALS AND DEVICES INCORPORATING SAME  
A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic...
US20090267044 PHASE CHANGE MEMORY DEVICE HAVING A BENT HEATER AND METHOD FOR MANUFACTURING THE SAME  
A phase change memory device includes heaters which are formed in their respective memory cells and vertically positioned stack patterns having phase change layers and top electrodes which are...
US20090159867 Phase change memory with layered insulator  
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating...
US20090050872 PROCESS FOR MANUFACTURING A COPPER COMPATIBLE CHALCOGENIDE PHASE CHANGE MEMORY ELEMENT AND CORRESPONDING PHASE CHANGE MEMORY ELEMENT  
A copper-diffusion plug 21 is provided within a pore in dielectric layer over a copper signal line. By positioning the plug below a chalcogenide region, the plug is effective to block copper...
US20110260133 SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF  
A switching element includes: a first electrode supplying metal ions; a second electrode less ionizable than the first electrode; and an ion conducting layer arranged between the first electrode...
US20090091971 Semiconductor phase change memory using multiple phase change layers  
In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may...
US20110108792 Single Crystal Phase Change Material  
A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the...
US20090218556 INTEGRATED CIRCUIT FABRICATED USING AN OXIDIZED POLYSILICON MASK  
An integrated circuit includes a first electrode, a second electrode, and dielectric material including an opening. The opening is defined by etching the dielectric material based on an oxidized...
US20110049461 CHEMICAL MECHANICAL POLISHING STOP LAYER FOR FULLY AMORPHOUS PHASE CHANGE MEMORY PORE CELL  
A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a first dielectric layer on the bottom electrode, forming a sacrificial layer on the...
US20090152737 MEMORY DEVICES HAVING CONTACT FEATURES  
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a...
US20050051763 Nanophase multilayer barrier and process  
A thin film barrier structure and process is disclosed, which is seen as particularly useful for use in devices that require protection from such common environmental species as oxygen and water....
US20070145346 Connection electrode for phase change material, associated phase change memory element, and associated production process  
The present disclosure relates to a connection electrode for phase change materials, to an associated phase change memory element and to an associated production process, wherein a plurality of...
US20120069624 REACTIVE METAL IMPLATED OXIDE BASED MEMORY  
Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first...
US20110001113 PHASE CHANGE MEMORY STRUCTURES  
A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars...
US20120280197 FLAT LOWER BOTTOM ELECTRODE FOR PHASE CHANGE MEMORY CELL  
A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of...
US20090173929 DATA MEMORY, WRITABLE AND READABLE BY MICROTIPS, WHICH HAS A WELL STRUCTURE, AND MANUFACTURING METHOD  
The invention relates to data storage memories, that can be written and read by using at least one write or read microtip which comes near to a point zone to be written or to be read on the...
US20080173858 PHASE CHANGE MEMORY DEVICES INCLUDING CARBON-CONTAINING ADHESIVE PATTERN, AND METHODS OF FABRICATING THE SAME  
Phase change memory devices include a heating electrode on a substrate and a phase change material pattern on the heating electrode. An adhesive pattern is disposed between the heating electrode...
US20090173928 POLYSILICON EMITTER BJT ACCESS DEVICE FOR PCRAM  
A resistive non-volatile memory cell with a bipolar junction transistor (BJT) access device formed in conjunction with the entire memory cell. The memory cell includes a substrate acting as a...
US20060060832 Memory component with memory cells having changeable resistance and fabrication method therefor  
The invention relates to a memory component having memory cells based on an active solid electrolyte material which can be changed in terms of its resistance value. The active solid electrolyte...
US20120039116 PHASE CHANGE MEMORY DEVICE COMPRISING BISMUTH-TELLURIUM NANOWIRES  
The present invention relates to a phase change memory device comprising bismuth-tellurium nanowires. More specifically, the bismuth-tellurium nanowires having PRAM characteristics may be prepared...
US20080078982 Current focusing memory architecture for use in electrical probe-based memory storage  
An apparatus comprising a substrate, an electrode coupled to the substrate, a modifiable layer coupled to the electrode, and a current focusing layer coupled to the modifiable layer. The current...
US20140346426 Memristor with Channel Region in Thermal Equilibrium with Containing Region  
A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric...
US20130001499 Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells  
A process for manufacturing a PCM device comprises forming a dielectric, producing a via in the dielectric starting at an area on the surface of the dielectric by forming a via opening in the area...
US20110193048 NON-VOLATILE MEMORY DEVICE HAVING BOTTOM ELECTRODE  
Provided is a non-volatile memory device including a bottom electrode disposed on a substrate and having a lower part and an upper part. A conductive spacer is disposed on a sidewall of the lower...
US20110038196 Electronic Devices Containing Switchably Conductive Silicon Oxides as a Switching Element and Methods for Production and Use Thereof  
In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a...
US20100038619 VARIABLE RESISTANCE ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE  
A variable resistance element includes a first conductive portion; an insulating film pattern provided on the first conductive portion; a level difference with respect to the upper surface of the...
US20080173859 Storage node and methods of forming the same, phase change memory device having a storage node and methods of fabricating and operating the same  
A storage node, phase change memory device having a storage node, a method of fabricating the phase change memory device and a method of operating the phase change memory device are provided. The...

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