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US20080073685 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a...
US20070045856 Mixed metal nitride and boride barrier layers  
Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of MxAlyNzBw...
US20050247965 Ferroelectric memory device with a conductive polymer layer and a method of formation  
A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a...
US20070075345 Platinum stuffed with silicon oxide as a diffusion oxygen barrier for semiconductor devices  
The present invention provides techniques to fabricate high dielectric MIM storage cell capacitors. In one embodiment, this is accomplished by forming a silicon contact is then formed to...
US20050023583 Multi media card formed by transfer molding  
A semiconductor card is made by a method which in one molding step forms a plastic body on a substrate attached to a surrounding frame by narrow connecting segments spanning a peripheral opening....
US20060180839 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same  
A layered ferromagnetic structure is composed of a first ferromagnetic layer positioned over a substrate; a second ferromagnetic layer positioned over the first ferromagnetic layer; and a first...
US20060006449 Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same  
In semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same, the hybrid dielectric layer includes a lower dielectric layer, an intermediate...
US20060261388 Method for manufacturing ferroelectric capacitor  
A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the...
US20050236654 Ferroelectric film laminated body, ferroelectric memory, piezoelectric element, liquid jet head, and printer  
To provide ferroelectric film laminated bodies with few crystal defects and having excellent characteristics. A ferroelectric film laminated body includes an electrode and a PZT system...
US20070080382 Semiconductor device  
A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug...
US20070018214 Magnesium titanium oxide films  
Embodiments of a magnesium titanium oxide structure on a substrate provide a dielectric for use in a variety of electronic devices. Embodiments of methods of fabricating such a dielectric include...
US20160086960 Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance  
Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer,...
US20080087890 Methods to form dielectric structures in semiconductor devices and resulting devices  
Methods of forming dielectric structures with a high dielectric constant (high “k”) may be used to fabricate gate dielectrics in integrated circuits and in other devices such as spintronic...
US20060261387 Semiconductor device and manufacturing method thereof  
A semiconductor device is disclosed. The semiconductor device includes a ferroelectric capacitor formed on a substrate and a wiring structure formed on the ferroelectric capacitor. The wiring...
US20060214204 Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same  
A ferroelectric capacitor structure can include a ferroelectric layer on a lower electrode and an upper electrode on the ferroelectric layer, the upper electrode including a metal oxide and a metal.
US20090302362 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is...
US20060108621 Capacitor insulating film, method for fabricating the same, capacitor element, method for fabricating the same, semiconductor memory device, and method for fabricating the same  
A capacitor insulating film is composed of a ferroelectric film formed on a substrate and containing an element functioning as a crystal nucleus which allows the growth of a crystal in a random...
US20050167715 Substrate for electronic devices, manufacturing method therefor, and electronic device  
There is provided a substrate for electronic devices, in which treatment for forming a reconstructed surface or a hydrogen-terminated surface on a substrate is not necessary, and a buffer layer...
US20050145909 Magnetoresistive device and electronic device  
A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19)....
US20160308070 SEMICONDUCTOR DEVICE  
The invention provides a semiconductor device including a substrate, a first dielectric layer, a conductive layer, a ferroelectric material layer, and a charge-trapping layer. The first dielectric...
US20060038214 Low voltage drive ferroelectric capacitor  
A method of forming a low-voltage drive thin film ferroelectric capacitor includes the steps of depositing a ferroelectric and platinum thin film dielectric layer over a bottom electrode,...
US20060027846 Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods  
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line. More particularly, the MTJ structure may...
US20160064510 DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELECTRIC MATERIAL AND METHOD FOR THE FORMATION THEREOF  
An illustrative device disclosed herein includes a semiconductor substrate. The substrate includes a source region, a drain region and a channel region. The channel region is arranged between the...
US20140306277 SEMICONDUCTOR STORAGE DEVICE  
A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate. Each of the magnetic tunnel junction elements stores data by a change...
US20110170329 NONVOLATILE FERROELECTRIC MEMORY DEVICE USING SILICON SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND REFRESH METHOD THEREOF  
A nonvolatile ferroelectric memory device using a silicon substrate includes an insulating layer formed in an etching region of the silicon substrate, a bottom word line formed in the insulating...
US20090321801 CAPACITOR INSULATING FILM, METHOD FOR FABRICATING THE SAME, CAPACITOR ELEMENT, METHOD FOR FABRICATING THE SAME, SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR FABRICATING THE SAME  
A capacitor insulating film is composed of a ferroelectric film formed on a substrate and containing an element functioning as a crystal nucleus which allows the growth of a crystal in a random...
US20160005749 SERIES FERROELECTRIC NEGATIVE CAPACITOR FOR MULTIPLE TIME PROGRAMMABLE (MTP) DEVICES  
Implementations of the technology described herein provide a Multiple Time Programmable (MTP) device, such as a Flash memory device, that implements a coupling gate in series with a floating gate....
US20140252439 MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME  
A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid...
US20120193693 MAGNETIC RANDOM ACCESS MEMORY AND A METHOD OF FABRICATING THE SAME  
An aspect of the present embodiment, there is provided magnetic random access memory device including a semiconductor substrate, a selection transistor on the semiconductor substrate, the...
US20090250735 SEMICONDUCTOR MEMORY  
A semiconductor memory according to an embodiment of the present invention including first and second adjacent bit lines extending in a first direction and provided in the same interconnect layer,...
US20090152607 FERROELECTRIC STACKED-LAYER STRUCTURE, FIELD EFFECT TRANSISTOR, AND FERROELECTRIC CAPACITOR AND FABRICATION METHODS THEREOF  
A ferroelectric stacked-layer structure is fabricated by forming a first polycrystalline ferroelectric film on a polycrystalline or amorphous substrate, and after planarizing a surface of the...
US20070272960 Ferroelectric memory transistor with conductive oxide gate structure  
The present invention discloses a ferroelectric transistor having a conductive oxide in the place of the gate dielectric. The conductive oxide gate ferroelectric transistor can have a three-layer...
US20070241379 Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device and thin-film multilayer capacitor  
A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a...
US20070045689 Ferroelectric Structures Including Multilayer Lower Electrodes and Multilayer Upper Electrodes, and Methods of Manufacturing Same  
In a ferroelectric structure after a first lower electrode film is formed using a first metal nitride, a second lower electrode film is formed on the first lower electrode film using a first...
US20050167712 Ferroelectric film, ferroelectric memory, and piezoelectric element  
To provide ferroelectric films with which highly reliable ferroelectric devices can be obtained. A ferroelectric film comprised of a perovskite structure ferroelectric shown by ABO3, including at...
US20070029630 INTEGRATED CIRCUITS WITH CONTEMPORANEOUSLY FORMED ARRAY ELECTRODES AND LOGIC INTERCONNECTS  
The invention relates to interconnects for an integrated circuit memory device. Embodiments of the invention include processes to fabricate interconnects for memory devices in relatively few...
US20070007569 Semiconductor memory device comprising magneto resistive element and its manufacturing method  
A semiconductor memory device including a memory cell having a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the...
US20060118844 Transistor type ferroelectric memory and method of manufacturing the same  
A transistor type ferroelectric memory includes a group-IV semiconductor layer, an oxide semiconductor layer formed over the group-IV semiconductor layer, a ferroelectric layer formed over the...
US20050212020 Semiconductor device and manufacturing method thereof  
An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor...
US20050151177 Ferroelectric film, ferroelectric capacitor, and ferroelectric memory  
A ferroelectric film is provided that is expressed by a general formula of A1-bB1-aXaO3, wherein: A includes Pb; B is composed of at least one of Zr and Ti; X is composed of at least one of V, Nb,...
US20050062087 Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same  
A memory device adapted to a chalcogenide phase-change memory is disclosed. The memory device comprises a top electrode, a bottom electrode, and a phase-change thin film between the top electrode...
US20140070289 FERROELECTRIC MEMORY AND MANUFACTURING METHOD THEREOF  
According to one embodiment, a ferroelectric memory includes a gate insulation film formed on a semiconductor substrate, a ferroelectric film formed on the gate insulation film, and a control...
US20100135061 Non-Volatile Memory Cell with Ferroelectric Layer Configurations  
In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a...
US20080258195 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A ferroelectric capacitor is formed above a semiconductor substrate (1), and thereafter, wirings (24a) are formed. A barrier film (25) covering the wirings (24a) is formed. A silicon oxide film...
US20060273366 Methods of manufacturing ferroelectric capacitors and semiconductor devices  
In a method of manufacturing a ferroelectric capacitor, a lower electrode layer is formed on a substrate. The lower electrode layer includes at least one lower electrode film. A ferroelectric...
US20160064391 DYNAMIC RANDOM ACCESS MEMORY CELL INCLUDING A FERROELECTRIC CAPACITOR  
A memory cell includes a capacitor that includes a first metal layer and a second metal layer. The capacitor includes a ferroelectric layer disposed between the first metal layer and the second...
US20150035031 MAGNETIC RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
In an MRAM device, the MRAM includes a magnetic tunnel junction (MTJ) structure and a protection layer on a sidewall of the MTJ structure. The protection layer includes a fluorinated metal oxide....
US20110248324 DUAL-GATE NON-VOLATILE FERROELECTRIC MEMORY  
A dual-gate non-volatile memory cell includes a first dielectric layer extending over a first gate, a semiconductor region extending over the first dielectric layer, a second dielectric layer...
US20090309145 METHOD AND SYSTEM FOR PATTERNING OF MAGNETIC THIN FLIMS USING GASEOUS TRANSFORMATION  
A magnetic thin film includes a magnetic tunnel junction defined by a surrounding region including a fluorinated, non-magnetic, electrically insulating material.
US20080165565 Ferroelectric Thin Films and Devices Comprising Thin Ferroelectric Films  
A method of producing a device with a ferroelectric crystal thin film on a first substrate including the steps of providing a ferroelectric crystal, of irradiating a first surface of the...

Matches 1 - 50 out of 273 1 2 3 4 5 6 >