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US20080142787 Fermionic bell-state analyzer and quantum computer using same  
The Bell-state analyzer includes a semiconductor device having quantum dots formed therein and adapted to support Fermions in a spin-up and/or spin-down states. Different Zeeman splittings in one...
US20100181551 Quantum dot transistor  
One or more quantum dots are used to control current flow in a transistor. Instead of being disposed in a channel between source and drain, the quantum dot (or dots) are vertically separated from...
US20150041762 Transistor Having Graphene Base  
A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron...
US20120068157 Transistor Having Graphene Base  
A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron...
US20050077509 Size regulating systems  
A system for regulating the particles distribution energy dependent parameter. The particles may have a cell containing the particles, a sensor to detect the particles distribution, a source to...
US20120175593 Nanograin Material and Photoelectric Conversion Device  
A quantum dot, which is an ultrafine grain, has a core-shell structure having a core portion and a shell portion protecting the core portion. The surface of the shell portion is covered with two...
US20080073641 QUANTUM TUNNELING DEVICES AND CIRCUITS WITH LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES  
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched...
US20080246023 Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions  
The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a...
US20090008630 TUNNELING TRANSISTOR WITH BARRIER  
The invention suggests a transistor (21) comprising a source (24) and a drain (29) as well as a barrier region (27) located between the source and the drain. The barrier region is separated from...
US20100026400 RESONANT TUNNELING STRUCTURE  
A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E2). A second quantum...
US20090008631 NANOWIRE TUNNELING TRANSISTOR  
A transistor comprises a nanowire (22, 22′) having a source (24) and a drain (29) separated by an intrinsic or lowly doped region (26, 28). A potential barrier is formed at the interface of the...
US20070164271 Resonant nanostructures and methods of use  
Resonant nanostructures (RNSs) are provided in one embodiment of the present invention. RNSs may be nano- to micro-scale structures that resonate at specific frequencies through the application of...
US20080246022 Method for Producing Planar Transporting Resonance Heterostructures  
An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the...
US20060243962 Quantum dot resonant tunneling device  
A quantum-dot resonant-tunneling device apparatus is provided. The quantum-dot resonant-tunneling device apparatus includes a pair of top-and-down N-type electron injection layers and a pair of...
US20100093140 GATED RESONANT TUNNELING DIODE  
A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which...
US20100103727 ST-RAM EMPLOYING A MAGNETIC RESONANT TUNNELING DIODE AS A SPACER LAYER  
A memory cell that includes a first magnetic layer, the magnetization of which is free to rotate under the influence of spin torque; a tunneling layer comprising a magnetic resonant tunneling...
US20070069196 Epitaxial wafer for LED and light emitting diode  
An epitaxial wafer for a light emitting diode has: a light-emitting portion having a n-type cladding layer, a p-type cladding layer and an active layer formed between the n-type cladding layer and...
US20090315019 Optical device having a quantum-dot structure  
Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is...
US20050056827 CMOS compatible low band offset double barrier resonant tunneling diode  
Three configurations of double barrier resonant tunneling diodes (RTD) are provided along with methods of their fabrication. The tunneling barrier layers of the diode are formed of low band offset...
US20090250688 MOLECULAR QUANTUM INTERFERENCE APPARATUS AND APPLICATIONS OF SAME  
A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second...
US20100133513 NANOPARTICLE / NANOTUBE-BASED NANOELECTRONIC DEVICES AND CHEMICALLY-DIRECTED ASSEMBLY THEREOF  
According to some embodiments, the present invention provides a nanoelectronic device based on a nanostructure that may include a nanotube with first and second ends, a metallic nanoparticle...
US20050139819 Process for fabricating nanoelectronic device by intermittent exposure  
A process for fabricating a nanoelectronic device by intermittent exposure is disclosed, consisting the steps of: providing a substrate on which a conductor or semiconductor thin film having a...
US20100212729 Epitaxial Growth of III-V Compounds on (111) Silicon for Solar Cells  
A multi-junction device can be used as a high efficiency solar cell, laser, or light-emitting diode. Multiple epitaxial films grown over a substrate have very low defect densities because an...
US20090243007 SPIN-DEPENDENT TUNNELLING CELL AND METHOD OF FORMATION THEREOF  
A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second...
US20060220000 Photon source  
A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and...
US20150001469 Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures  
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched...
US20100123120 A SINGLE-PHOTON DETECTOR WITH A QUANTUM DOT AND A NANO-INJECTOR  
A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the...
US20120248413 ENERGY CONVERSION DEVICE WITH SELECTIVE CONTACTS  
A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of Eg1, and a second semiconductor material with an energy...
US20100025655 PHOTON TUNNELING LIGHT EMITTING DIODES AND METHODS  
Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped...
US20090250687 SEMICONDUCTOR DEVICE AND METHOD TO CONTROL THE STATE OF A SEMICONDUCTOR DEVICE AND TO MANUFACTURE THE SAME  
A semiconductor device includes a conduct structure to which are arranged contacts for a source and a drain, a resonance region including at least two barrier regions, at least one resonator...
US20100026399 Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes  
A circuit includes a resonant tunneling device having first and second terminals, and biased to exhibit a negative resistance between the terminals, the terminals being coupled at spaced locations...
US20090321719 NOVEL MATERIAL AND PROCESS FOR INTEGRATED ION CHIP  
An integrated ion chip for a large scale quantum device of interconnected ion (or other charged particles) traps each holding a small number of particles for a finite period of time, in a...
US20100207101 INCORPORATING GATE CONTROL OVER A RESONANT TUNNELING STRUCTURE IN CMOS TO REDUCE OFF-STATE CURRENT LEAKAGE, SUPPLY VOLTAGE AND POWER CONSUMPTION  
A semiconductor device and method for fabricating a semiconductor device incorporating gate control over a resonant tunneling structure. The semiconductor device includes a source terminal, a gate...
US20100102298 SCHOTTKY BARRIER QUANTUM WELL RESONANT TUNNELING TRANSISTOR  
A semiconductor transistor device includes one or more conductive base regions, a first semiconductor barrier region, a second semiconductor barrier region, a conductive emitter region, and a...
US20160351807 ELECTRIC FIELD CONTROL ELEMENT FOR PHONONS  
Generally discussed herein are techniques for and systems and apparatuses configured to control phonons using an electric field. In one or more embodiments, an apparatus can include electrical...
US20160260721 CMOS COMPATIBLE RESONANT INTERBAND TUNNELING CELL  
A semiconductor device includes a first diode connected transistor of a first conductivity type and a second diode connected transistor of a second conductivity type connected in series, each of...
Matches 1 - 36 out of 36