Matches 1 - 39 out of 39


Match Document Document Title
US20090085070 Solid-state image pickup device, method of manufacturing solid-state image pickup device, and image pickup device  
Disclosed herein is a solid-state image pickup device including, a plurality of light receiving units, a transfer channel, a first transfer electrode, a second transfer electrode, first wiring,...
US20080237653 Deep Implant Self-Aligned To Polysilicon Gate  
A CMOS image sensor includes a pinned photodiode and a transfer gate that are formed using a thick mask that is self-aligned to at least one edge of the polysilicon gate structure to facilitate...
US20090200580 Image sensor and pixel including a deep photodetector  
What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type...
US20060097290 Semiconductor structure for imaging detectors  
There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed on a substrate with an active area of each...
US20090039397 IMAGE SENSOR STRUCTURE  
An avalanche photodiode is deposited and integrated directly on top of CMOS readout circuitry. The anode of the avalanche photodiode may be independently biased at high voltage so that the...
US20070012955 Organic and inorganic hybrid photoelectric conversion device  
A photoelectric conversion device comprising: an inorganic photoelectric conversion film; and an organic photoelectric conversion film, wherein an insulating film between the inorganic...
US20050029553 Clocked barrier virtual phase charge coupled device image sensor  
The charge coupled device includes a clocked barrier pixel architecture that has a two phase gate structure that substantially reduces clock-induced dark current.
US20090189197 SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS  
A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first...
US20070176212 INTEGRATED CIRCUIT HAVING RESISTANCE TEMPERATURE SENSOR  
An integrated circuit having a resistance temperature sensor composed of a first resistance structure formed within a trench, and a second resistance structure formed within a mesa region is...
US20070278535 Solid-state imaging device and imaging apparatus  
A CCD type solid-state imaging device includes: a photoelectric conversion element (n layer 2, p layer 3) formed in a semiconductor substrate 1; a charge transfer channel 5 that transfers electric...
US20080001181 Complementarily doped metal-semiconductor interfaces to reduce dark current in MSM photodetectors  
Metal-Semiconductor-Metal (“MSM”) photodetectors and methods to fabricate thereof are described. The MSM photodetector includes a thin heavily doped (“delta doped”) regions deposited at an...
US20080017893 Back-lit image sensor  
An image sensor including a P-type doped layer of a semiconductor material including first and second opposite surfaces; and at least one photodiode formed in the layer on the side of the first...
US20070278534 LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY  
The present invention is directed to novel front side illuminated, back side contact photodiodes and arrays thereof In one embodiment, the photodiode has a substrate with at least a first and a...
US20080099793 Photodiode module and apparatus including multiple photodiode modules  
Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of...
US20080217661 TWO-DIMENSIONAL TIME DELAY INTEGRATION VISIBLE CMOS IMAGE SENSOR  
A two dimensional time delay integration CMOS image sensor having a plurality of pinned photodiodes, each pinned photodiode collects a charge when light strikes the pinned photodiode, a plurality...
US20130140610 SOLID-STATE IMAGING DEVICE AND CAMERA  
A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer...
US20070145424 IMAGE SENSOR, CONTROLLING METHOD OF THE SAME, X-RAY DETECTOR AND X-RAY CT APPARATUS  
The present invention provides always stably sampling a high quality image irrespective of the displacement of a subject, with a simpler arrangement. The image sensor in accordance with the...
US20080173905 SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME  
A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric...
US20070085109 Single element optical sensor  
The single element optical sensor of this invention is a two-terminal element and comprises a light absorbing semiconductor layer, potential barrier materials positioned in said light absorbing...
US20080135884 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME  
A solid-state imaging device is provided and includes a photoelectric conversion unit and a charge transfer unit including charge transfer electrodes for transferring charges generated in the...
US20080173904 CMOS image sensors with a bonding pad and methods of forming the same  
A CMOS image sensor with a bonding pad comprises a semiconductor substrate having a pixel region and a circuit region; a passivation layer having an opening over the semiconductor substrate; and a...
US20080029788 IMAGING DEVICE  
First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region...
US20080029787 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS  
A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the...
US20070029580 IMAGE-PROCESSING UNIT  
An image-processing unit for an image sensor is provided. The image-processing unit comprises a plurality of photodiodes arranged inside the image sensor. The photodiodes have different sensing...
US20070152291 CMOS Image Sensor  
Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance...
US20080087922 Image sensor with improved color crosstalk  
An image sensor comprises a substrate of a first conductivity type. First and second pixels are arrayed over the substrate. A potential barrier is formed in a region of the substrate corresponding...
US20110019063 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS  
A solid-state imaging device includes a pixel including a buried photodiode formed inside a substrate, a buried floating diffusion formed at a depth equal to that of the buried photodiode in the...
US20100230730 SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS  
A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first...
US20150130902 DISTANCE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME  
A pixel of a distance sensor includes a photosensor that generates photocharges corresponding to light incident in a first direction. The photosensor includes a plurality of first layers having a...
US20120200842 PHOTOELECTRIC CONVERSION ELEMENT, LIGHT RECEIVING DEVICE, LIGHT RECEIVING SYSTEM, AND DISTANCE MEASURING DEVICE  
A first photoelectric conversion element, which detects light and converts the light into photoelectrons has: one MOS diode having an electrode formed on a semiconductor base body with an...
US20160150174 IMAGE SENSOR PIXELS HAVING BUILT-IN VARIABLE GAIN FEEDBACK AMPLIFIER CIRCUITRY  
An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a floating diffusion node, and charge transfer gate. An amplifying transistor may have a gate...
US20160150169 IMAGE SENSOR PIXELS HAVING P-CHANNEL SOURCE FOLLOWER TRANSISTORS AND INCREASED PHOTODIODE CHARGE STORAGE CAPACITY  
An image sensor may include image sensor pixels formed on a substrate. Each pixel may have a photodiode, a floating diffusion node, and charge transfer gate. The pixel may include an n− type doped...
US20160056199 UNIT PIXELS, IMAGE SENSORS INCLUDING THE SAME, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME  
A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges...
US20160049440 IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS  
A solid-state image pickup unit includes substrate; a red pixel including a red charge storage section; a blue pixel including a blue charge storage section; and a green pixel including a...
US20160020237 SOLID STATE IMAGE SENSOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE  
There is provided a solid state image sensor including a photoelectric conversion unit formed and embedded in a semiconductor substrate, an impurity region that retains an electric charge...
US20160020236 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS  
Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon...
US20150357358 SOLID-STATE IMAGE SENSOR AND CAMERA  
An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in...
US20120188431 SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS  
A solid-state image pickup device includes: a photoelectric conversion portion formed on a substrate and composed of a photodiode; an image pickup area in which plural pixels each including a...
US20110187908 HIGH-SPEED CHARGE-TRANSFER PHOTODIODE, A LOCK-IN PIXEL, AND A SOLID-STATE IMAGING DEVICE  
The present invention provides a high-speed charge-transfer photodiode encompassing a first conductivity type semiconductor layer (20) serving as a charge-generation region; and a second...

Matches 1 - 39 out of 39