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US20090001424 III-nitride power device  
A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device.
US20130119393 Vertical Gallium Nitride Schottky Diode  
A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding...
US20050098798 Semiconductor integrated circuit device in which terminal capacitance is adjustable  
A semiconductor integrated circuit device includes a terminal and a first capacitance adjusting section. The first capacitance adjusting section is connected to a wiring between the terminal and a...
US20080173895 Gallium nitride on silicon with a thermal expansion transition buffer layer  
A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate with a first thermal...
US20120305992 HYBRID MONOLITHIC INTEGRATION  
The present invention describes a hybrid integrated circuit comprising both CMOS and III-V devices, monolithically integrated in a single chip. It allows the almost complete elimination of the...
US20050023559 Magnetic oxide thin film, magnetic memory element, and method of manufacturing magnetic oxide thin film  
In a magnetic oxide thin film, at least three phases including a layered antiferromagnetic metallic phase, an antiferromagnetic charge-ordered insulating phase, and a ferromagnetic metallic phase...
US20070125996 Crystal firm, crystal substrate, and semiconductor device  
A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is...
US20150014740 Monolithic Composite III-Nitride Transistor with High Voltage Group IV Enable Switch  
There are disclosed herein various implementations of a monolithically integrated component. In one exemplary implementation, such a monolithically integrated component includes an enhancement...
US20050285145 Web image transfer system using LED based lighting systems  
A system for transmitting a color image over a network. The system has a light source, a first reference color chart exhibiting a first spectral response, a camera capturing an image of the first...
US20050179056 System for resonant circuit tuning  
The present invention provides a system for producing a tunable resonant circuit (200), where the resonant circuit utilizes both integrated semiconductor devices and discrete components. The...
US20060186438 Device for thermal sensing  
The present invention provides a device for thermal sensing which uses a replaceable or disposable substrate comprising channels for receiving a sample to be measured. The device according to the...
US20050017268 Display apparatus and its manufacturing method  
An object of the present invention is to provide a display apparatus that has, even when it is a large-sized one, a high manufacturing yield, as well as a simple structure as a whole including...
US20150048422 A METHOD FOR FORMING A CRYSTALLINE COMPOUND III-V MATERIAL ON A SINGLE ELEMENT SUBSTRATE  
A method for forming a crystalline compound material on a single element substrate includes etching a high aspect ratio trench in a single element crystalline substrate and forming a dielectric...
US20090302352 P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies  
This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow...
US20100032718 III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer  
A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride...
US20050045914 Flip chip device assembly machine  
A flip chip assembly machine (FCAM) (30) includes a main gantry (50) and a substrate camera gantry (40) that are configured to operate independently of each other and, respectively, support a die...
US20070210333 Hybrid semiconductor device  
A hybrid device including a silicon based MOSFET operatively connected with a GaN based device.
US20080296626 NITRIDE SUBSTRATES, THIN FILMS, HETEROSTRUCTURES AND DEVICES FOR ENHANCED PERFORMANCE, AND METHODS OF MAKING THE SAME  
The present invention provides nitride semiconductors having a moderate density of basal plane stacking faults and a reduced density of threading dislocations, various products based on,...
US20130015502 STRUCTURE AND METHOD FOR FORMING A LIGHT DETECTING DIODE AND A LIGHT EMITTING DIODE ON A SILICON-ON-INSULATOR WAFER BACKSIDE  
A structure and method for fabricating a light emitting diode and a light detecting diode on a silicon-on-insulator (SOI) wafer is provided. Specifically, the structure and method involves forming...
US20140252375 Delamination and Crack Prevention in III-Nitride Wafers  
In an exemplary implementation, a method includes growing a III-Nitride body over a group IV substrate in a semiconductor wafer. The method includes forming at least one device layer over the...
US20060205197 Compound semiconductor devices and methods of manufacturing the same  
A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor...
US20130320404 GALLIUM NITRIDE TO SILICON DIRECT WAFER BONDING  
A direct wafer bonding process for joining GaN and silicon substrates involves pre-treating each of the wafers in an ammonia plasma in order to render the respective contact surfaces ammophilic....
US20100276731 Inorganic Nanocrystal Bulk Heterojunctions  
A bulk heterojunction comprising an intermixed blend of fully inorganic n- and p-type particles and its method of manufacture are described. The particles are preferably nanometer-scale,...
US20140299872 HETEROGENEOUS INTERGRATION OF GROUP III-V OR II-VI MATERIALS WITH SILICON OR GERMANIUM  
Substrates for an electronic circuit and device manufacturing methods are disclosed. According to an embodiment, the substrate comprises: a silicon or germanium wafer impregnated with impurities...
US20050263794 Integrated circuitry  
Semiconductor processing methods include forming a plurality of patterned device outlines over a semiconductor substrate, forming electrically insulative partitions or spacers on at least a...
US20050072989 Non-volatile memory device  
A memory device can include an active layer that has a selectable lateral conductivity. The layer can include a plurality of nanoparticles.
US20070018199 Nitride-based transistors and fabrication methods with an etch stop layer  
A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch...
US20080142846 Nitride semiconductor substrate and manufacturing method thereof  
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on...
US20100163931 GROUP III-V NITRIDE LAYER AND METHOD FOR PRODUCING THE SAME  
There is disclosed a hexagonal Group III-V nitride layer exhibiting high quality crystallinity capable of improving the properties of a semiconductor device such as a light emitting element. This...
US20080105902 Rectifier  
In the rectifier, a barrier layer and a channel layer constitute a heterojunction portion, and a two-dimensional electron gas channel is generated in the vicinity of a boundary between the channel...
US20080296625 Gallium nitride-on-silicon multilayered interface  
A multilayer thermal expansion interface between silicon (Si) and gallium nitride (GaN) films is provided, along with an associated fabrication method. The method provides a (111) Si substrate and...
US20080157123 Epitaxial group III nitride layer on (001)-oriented group IV semiconductor  
Group III nitride layers have a wide range of uses in electronics and optoelectronics. Such layers are generally grown on substrates such as sapphire, SiC and recently Si(111). For the purpose...
US20130214331 METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE  
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native...
US20090189192 DEPOSITION OF GROUP III-NITRIDES ON Ge  
The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3),...
US20150048423 SEMICONDUCTOR DEVICE HAVING A III-V CRYSTALLINE COMPOUND MATERIAL SELECTIVELY GROWN ON THE BOTTOM OF A SPACE FORMED IN A SINGLE ELEMENT SUBSTRATE.  
A method for forming a crystalline compound material on a single element substrate includes etching a high aspect ratio trench in a single element crystalline substrate and forming a dielectric...
US20060102933 III-V Group compound semiconductor light emitting device and manufacturing method thereof  
A light emitting device including a III-V group compound semiconductor includes a first stacked body and a second stacked body. The first stacked body includes a III-V group compound semiconductor...
US20150235838 HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVANCED INTEGRATED CIRCUITS  
Various methods to integrate a Group III nitride material on a silicon material are provided. In one embodiment, the method includes providing a structure including a (100) silicon layer, a (111)...
US20140077224 Pre-Cutting a Back Side of a Silicon Substrate for Growing Better III-V Group Compound Layer on a Front Side of the Substrate  
The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from...
US20130270608 HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVANCED INTEGRATED CIRCUITS  
Various methods to integrate a Group III nitride material on a silicon material are provided. In one embodiment, the method includes providing a structure including a (100) silicon layer, a (111)...
US20050133823 Method and apparatus for forming a wiring, wiring board, and ink set  
A method for forming a wiring according to the present invention includes supplying to a substrate a first liquid containing a first component to form a first pattern and a second liquid...
US20120217548 THIN-FILM HETEROSTRUCTURE THERMOELECTRICS IN A GROUP IIA AND IV-VI MATERIALS SYSTEM  
Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI...
US20100187572 SUSPENDED MONO-CRYSTALLINE STRUCTURE AND METHOD OF FABRICATION FROM A HETEROEPITAXIAL LAYER  
Methods of fabricating a suspended mono-crystalline structure use annealing to induce surface migration and cause a surface transformation to produce the suspended mono-crystalline structure above...
US20130126946 III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate  
A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The...
US20090014756 Method of producing large area SiC substrates  
A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or...
US20090014705 PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first...
US20150054037 SEMICONDUCTOR GALLIUM ARSENIDE COMPATIBLE EPITAXIAL FERROELECTRIC DEVICES FOR MICROWAVE TUNABLE APPLICATION  
The presently claimed invention provides a barium strontium titanate/strontium titanate/gallium arsenide (BST/STO/GaAs) heterostructure comprising a gallium arsenide (GaAs) substrate, at least one...
US20080251814 HETERO-BONDED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE WITH AN UNPINNING DIELECTRIC LAYER  
A hetero-bonded SOI substrate comprises a stack of a semiconductor handle substrate, an isolation insulator layer, a depinning dielectric layer, and a top non-silicon semiconductor layer. The...
US20130256760 METHOD FOR FORMING GROUP III/V CONFORMAL LAYERS ON SILICON SUBSTRATES  
A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from...
US20100078626 P-TYPE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, ORGANIC ELECTROLUMINESCENT DEVICE, AND METHOD FOR MANUFACTURING P-TYPE SEMICONDUCTOR MATERIAL  
To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate,...
US20120261721 SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS  
A semiconductor structure having: a column IV material or column IV-IV material; a nucleation layer of AlN layer or a column III nitride having more than 60% aluminum content on a surface of the...

Matches 1 - 50 out of 96 1 2 >