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US20070164314 Nitrogen polar III-nitride heterojunction JFET  
An N-polar III-nitride heterojunction JFET which includes a P-type III-nitride body under the gate electrode thereof.
US20110057196 GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same  
A GaN HEMT with Schottky gate is disclosed. The GaN HEMT sequentially has a GaN layer, an AlGaN layer, and a Schottky gate on a substrate, and a source and a drain on two sides of the Schottky...
US20070176201 Integrated III-nitride devices  
A III-nitride heterojunction semiconductor device that includes a power electrode that is electrically connected to a conductive substrate through a trench in the heterojunction thereof.
US20150214352 Enhancement Mode Device  
An enhancement mode device includes a floating gate structure. The floating gate structure includes a first bottom dielectric layer, a second bottom dielectric layer on the first bottom dielectric...
US20150236109 GATE STRUCTURE  
The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed...
US20120211800 GaN HEMTs with a Back Gate Connected to the Source  
The present invention reduces the dynamic on resistance in the channel layer of a GaN device by etching a void in the nucleation and buffer layers between the gate and the drain. This void and the...
US20110084713 CHLORIDE DETECTION  
A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In...
US20140027778 Robust Fused Transistor  
According to an exemplary implementation, a transistor includes a plurality of drain fingers interdigitated with a plurality of source fingers. The transistor further includes a gate configured to...
US20070007547 III-Nitride enhancement mode devices  
A III-nitride power semiconductor device that includes a gate barrier under the gate thereof, and a method for fabricating the device.
US20100258848 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME  
A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In...
US20090072272 ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES  
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face...
US20130020614 DUAL-GATE NORMALLY-OFF NITRIDE TRANSISTORS  
A dual-gate normally-off nitride transistor that includes a first gate structure formed between a source electrode and a drain electrode for controlling a normally-off channel region of the...
US20150060947 Transistor with Diamond Gate  
A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond...
US20100084687 ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS  
Structures, devices and methods are provided for creating enhanced back barriers that improve the off-state breakdown and blocking characteristics in aluminum gallium nitride AlGaN/GaN high...
US20110018034 HETEROGENEOUS INTEGRATION OF LOW NOISE AMPLIFIERS WITH POWER AMPLIFIERS OR SWITCHES  
A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium...
US20110198611 III-Nitride Power Device with Solderable Front Metal  
Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit...
US20100301395 Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device  
A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by...
US20130140578 CIRCUIT STRUCTURE HAVING ISLANDS BETWEEN SOURCE AND DRAIN  
A circuit structure includes a substrate, an unintentionally doped gallium nitride (UID GaN) layer over the substrate, a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a...
US20090065787 COMPOUND SEMICONDUCTOR STRUCTURE  
A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series...
US20130214283 Power Transistor Having Segmented Gate  
There are disclosed herein various implementations of a transistor having a segmented gate region. Such a transistor may include at least one segmentation dielectric segment and two or more gate...
US20150115324 Switching Circuit  
In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low...
US20110117669 MATERIALS AND METHODS FOR DETECTING TOXINS, PATHOGENS AND OTHER BIOLOGICAL MATERIALS  
Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials....
US20150041859 Redistribution Board, Electronic Component and Module  
A redistribution board includes a first conductive layer including a redistribution structure for low voltage signals, a second conductive layer including a redistribution structure for high...
US20120175631 ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME  
Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using...
US20150263116 High electron mobility transistors with improved gates and reduced surface traps  
The present invention is related to high electron mobility transistors for power switching and microwave amplification and switching. More specifically, it related to a high electron mobility...
US20150060861 GaN Misfets with Hybrid AI203 As Gate Dielectric  
Some embodiments of the present disclosure relates to a hybrid gate dielectric layer that has good interface and bulk dielectric properties. Surface traps can degrade device performance and cause...
US20120153356 HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM GALLIUM NITRIDE LAYER  
Disclosed embodiments include a high electron mobility transistor (HEMT) with an indium gallium nitride layer set as one of a plurality of barrier sublayers and methods for forming such a HEMT....
US20150060949 FET DIELECTRIC RELIABILITY ENHANCEMENT  
A semiconductor device may be formed by forming a silicon-containing gate dielectric layer over a semiconductor layer. A gate metal layer is formed over the gate dielectric layer; the gate metal...
US20140327047 FET DIELECTRIC RELIABILITY ENHANCEMENT  
A semiconductor device may be formed by forming a silicon-containing gate dielectric layer over a semiconductor layer. A gate metal layer is formed over the gate dielectric layer; the gate metal...
US20120217506 III-Nitride Heterojunction Devices Having a Multilayer Spacer  
In accordance with one implementation of the present disclosure, a III-Nitride heterojunction device includes a III-Nitride channel layer, a III-Nitride multilayer spacer situated over the...
US20120235159 Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions  
Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to...
US20130320952 MONOLITHICALLY INTEGRATED HEMT AND CURRENT PROTECTION DEVICE  
A transistor device includes a high electron mobility field effect transistor (HEMT) and a protection device. The HEMT has a source, a drain and a gate. The HEMT switches on and conducts current...
US20110088456 NORMALIZED HYDROGEN SENSING AND METHODS OF FABRICATING A NORMALIZED HYDROGEN SENSOR  
HEMT-based hydrogen sensors are provided. In accordance with one embodiment, a normalized sensor is provided having a control HEMT-based sensor connected in series to an active HEMT-based sensor....
US20120223366 HIGH VOLTAGE GAN TRANSISTOR  
A multiple field plate transistor includes an active region, with a source, drain, and gate. A first spacer layer is between the source and the gate and a second spacer layer between the drain and...
US20110114997 HIGH VOLTAGE GaN TRANSISTORS  
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer...
US20110068372 SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS  
Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs,...
US20120188020 LINEAR VOLTAGE-CONTROLLED CURRENT SOURCE  
Embodiments of circuits, methods and systems for a voltage-controlled current source are disclosed. In some embodiments, the voltage-controlled current source may be a three-terminal device having...
US20050127399 Non-uniform gate pitch semiconductor devices  
Semiconductor devices having a plurality of unit cells connected in parallel are provided. The unit cells each have a gate finger with a gate pitch between adjacent ones of the gate fingers. The...
US20140077266 Heterostructure Transistor with Multiple Gate Dielectric Layers  
A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first...
US20110137184 PRESSURE SENSING  
A high electron mobility transistor (HEMT) is disclosed capable of performing as a pressure sensor. In one embodiment, the subject pressure sensor can be used for the detection of body fluid...
US20140175514 RING-SHAPED TRANSISTORS PROVIDING REDUCED SELF-HEATING  
A ring-shaped transistor includes a set of gates. Each gate of the set is disposed between a corresponding source and a corresponding drain. The set of gates are arranged such that all of the set...
US20120049243 GAN BASED HEMTS WITH BURIED FIELD PLATES  
A transistor with source and drain electrodes formed in contact with an active region and a gate between the source and drain electrodes and in contact with the active region. A first spacer layer...
US20100314640 INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES  
Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A...
US20150115327 Group III-V Device Including a Buffer Termination Body  
There are disclosed herein various implementations of a III-Nitride device and method for its fabrication. The III-Nitride device includes a III-Nitride buffer layer situated over a substrate, the...
US20110241020 HIGH ELECTRON MOBILITY TRANSISTOR WITH RECESSED BARRIER LAYER  
Embodiments of a high electron mobility transistor with recessed barrier layer, and methods of forming the same, are disclosed. Other embodiments are also be described and claimed.
US20130307027 METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH CHANNEL CONDUCTIVITY AND HIGH BREAKDOWN VOLTAGE NITROGEN POLAR HIGH ELECTRON MOBILITY TRANSISTORS  
A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In, Al, Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach...
US20080258176 Antimonide-based compound semiconductor with titanium tungsten stack  
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer....
US20100327292 METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, SUBSTRATES MANUFACTURED THEREOF AND DEVICES MANUFACTURED ON SUCH SUBSTRATES  
The invention is related to a method of obtaining bulk mono-crystalline gallium-containing nitride, comprising a step of seeded crystallization of mono-crystalline gallium-containing nitride from...
US20110074381 SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS  
Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin...
US20130240951 GALLIUM NITRIDE SUPERJUNCTION DEVICES  
Gallium nitride high electron mobility transistor structures enable high breakdown voltages and are usable for high-power, and/or high-frequency switching. Schottky diodes facilitate high voltage...