Matches 1 - 10 out of 10


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US20110147794 STRUCTURE AND METHOD FOR A SILICON CONTROLLED RECTIFIER (SCR) STRUCTURE FOR SOI TECHNOLOGY  
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body...
US20080237632 III-nitride power semiconductor device  
A III-nitride power semiconductor device that includes a first III-nitride power semiconductor device and a second III-nitride power semiconductor device formed in a common semiconductor die and...
US20090140290 SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE  
A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The...
US20070252169 Electric Circuit Device, Electric Circuit Module, and Power Converter  
The present invention provides an electric circuit device in which it is possible to achieve simultaneously the improvement of cooling performance and reduction in operating loss due to line...
US20150194511 SILICON-CONTROLLED RECTIFICATION DEVICE WITH HIGH EFFICIENCY  
A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the...
US20100163924 LATERAL SILICON CONTROLLED RECTIFIER STRUCTURE  
A lateral silicon controlled rectifier structure includes a P-type substrate; an N-well region in the P-type substrate; a first P+ doped region in the N-well region and being connected to an...
US20150115317 PROTECTION DEVICES FOR PRECISION MIXED-SIGNAL ELECTRONIC CIRCUITS AND METHODS OF FORMING THE SAME  
Apparatus and methods for precision mixed-signal electronic circuit protection are provided. In one embodiment, an apparatus includes a p-well, an n-well, a poly-active diode structure, a p-type...
US20130285114 TWIN-WELL LATERAL SILICON CONTROLLED RECTIFIER  
A LSCR includes a substrate having a semiconductor surface which is p-doped. A first nwell and a second nwell spaced apart from one another are in the semiconductor surface by a lateral spacing...
US20160005732 BIPOLAR JUNCTION TRANSISTOR STRUCTURE  
We disclose a bi-directional bipolar junction transistor (BJT) structure, comprising: a base region of a first conductivity type, wherein said base region constitutes a drift region of said...
US20130292740 SEMICONDUCTOR DEVICE  
In a region located between a collector electrode and a semiconductor substrate, there are a portion where a hollow region is located and a portion where no hollow region is located. Between the...

Matches 1 - 10 out of 10