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US20150236144 IE TYPE TRENCH GATE IGBT  
In a method of further enhancing the performance of a narrow active cell IE type trench gate IGBT having the width of active cells narrower than that of inactive cells, it is effective to shrink...
US20130175574 IE TYPE TRENCH GATE IGBT  
In a method of further enhancing the performance of a narrow active cell IE type trench gate IGBT having the width of active cells narrower than that of inactive cells, it is effective to shrink...
US20140015005 SINGLE CHIP IGNITER AND INTERNAL COMBUSTION ENGINE IGNITION DEVICE  
Aspects of the invention are directed to a single chip igniter such that it is possible to realize a reduction in operating voltage, an increase in noise tolerance, a reduction in size, and a...
US20120292662 IE-TYPE TRENCH GATE IGBT  
The invention of the present application provides an IE-type trench IGBT. In the IE-type trench IGBT, each of linear unit cell areas that configure a cell area is comprised principally of linear...
US20130328105 NARROW ACTIVE CELL IE TYPE TRENCH GATE IGBT AND A METHOD FOR MANUFACTURING A NARROW ACTIVE CELL IE TYPE TRENCH GATE IGBT  
In an equal width active cell IE type IGBT, a wide active cell IE type IGBT, and the like, an active cell region is equal in trench width to an inactive cell region, or the trench width of the...
US20140091358 MCT Device with Base-Width-Determined Latching and Non-Latching States  
Methods and systems for a gate-controlled thyristor which switches between narrow-base operation in the ON state and wide-base operation in the OFF state, and which can only sustain latch-up in...
US20130256745 Deep Gate Trench IGBT  
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) with buried depletion electrode. Such an IGBT may include a collector at a bottom surface of a...
US20140070265 FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME  
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region...
US20150129930 INSULATING GATE-TYPE BIPOLAR TRANSISTOR  
An object of the present invention is to provide a trench gate type IGBT achieving both retention of withstand voltage and lowering of ON-state voltage and to provide a method for manufacturing...
US20140124830 INSULATED GATE BIPOLAR TRANSISTOR  
An IGBT has layers between emitter and collector sides, including a drift layer, a base layer electrically contacting an emitter electrode and completely separated from the drift layer, first and...
US20090212321 Trench IGBT with trench gates underneath contact areas of protection diodes  
A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode...
US20140197452 ELECTRONIC DEVICE COMPRISING CONDUCTIVE REGIONS AND DUMMY REGIONS  
A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending...
US20080296612 Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device  
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing (100)...
US20140264433 DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD  
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the...
US20070284609 METHOD AND APPARATUS FOR DRAIN PUMP POWER CONSERVATION  
A method and apparatus are provided for improved power conservation in a semiconductor device (100) which includes a high voltage generating circuit (200) such as a drain pump. The operation...
US20110012130 High Breakdown Voltage Wide Band-Gap MOS-Gated Bipolar Junction Transistors with Avalanche Capability  
High power wide band-gap MOSFET-gated bipolar junction transistors (“MGT”) are provided that include a first wide band-gap bipolar junction transistor (“BJT”) having a first collector, a first...
US20140124831 INSULATED GATE BIPOLAR TRANSISTOR  
An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first...
US20120074458 QUASI-VERTICAL GATED NPN-PNP ESD PROTECTION DEVICE  
Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed...
US20090146177 VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS  
A trench type IGBT as disclosed herein includes a plurality of channel regions having one threshold voltage for the normal operation of the device and a plurality of channel regions having a...
US20110193131 Devices, Structures, and Methods Using Self-Aligned Resistive Source Extensions  
Devices, structures, and related methods for IGBTs and the like which include a self-aligned series resistance at the source-body junction to avoid latchup. The series resistance is achieved by...
US20140061718 INSULATED GATE BIPOLAR TRANSISTOR  
There is provided an insulated gate bipolar transistor, including: an active region including a gate electrode, a first emitter metal layer, a first well region, and one portion of a third well...
US20090014754 TRENCH TYPE INSULATED GATE MOS SEMICONDUCTOR DEVICE  
A vertical and trench type insulated gate MOS semiconductor device includes a plurality of regions each being provided between adjacent ones of a plurality of the straight-line-like trenches...
US20130187195 Power Transistor  
A cell field has an edge and a center, an individual device cells are connected in parallel. A first type of device cells has a body region with a first size and a source region with a second size...
US20150028382 INSULATED GATE BIPOLAR TRANSISTOR WITH HIGH EMITTER GATE CAPACITANCE  
An IGBT is disclosed with a high emitter-gate capacitance, wherein an active cell region can include plural emitter and gate regions. A termination edge region can include a varied lateral doping...
US20140124829 INSULATED GATE BIPOLAR TRANSISTOR  
An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region...
US20140209971 INSULATED GATE BIPOLAR TRANSISTOR  
Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The...
US20090315072 Semiconductor Device, Semiconductor Integrated Circuit Equipment Using the Same for Driving Plasma Display, and Plasma Display Unit  
In a lateral IGBT structure equipped with an emitter terminal, comprising two or more second conductivity type base layers, per one collector terminal, the second conductivity type base layer in...
US20150035003 DUAL TRENCH-GATE IGBT STRUCTURE  
Aspects of the present disclosure describe an IGBT device including a substrate including a bottom semiconductor layer of a first conductivity type and an upper semiconductor layer of a second...
US20150155375 GATE-CONTROLLED P-I-N SWITCH WITH A CHARGE TRAPPING MATERIAL IN THE GATE DIELECTRIC AND A SELF-DEPLETED CHANNEL  
The subject disclosure presents power semiconductor devices, and methods for manufacture thereof, with a low on-state voltage drop and a low turn-off energy. In an aspect, a power semiconductor...
US20130037853 SEMICONDUCTOR DEVICE  
A semiconductor device includes a stripe-shaped gate trench formed in one major surface of n-type drift layer, a gate trench including gate polysilicon formed therein, and a gate polysilicon...
US20150091053 IGBT with Reduced Feedback Capacitance  
An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first...
US20130134477 BACK GATE TRIGGERED SILICON CONTROLLED RECTIFIERS  
Back gate triggered silicon controlled rectifiers (SCR) and methods of manufacture are disclosed. The method includes forming a first diffusion type and a second diffusion type in a semiconductor...
US20130037852 POWER MOSFET, AN IGBT, AND A POWER DIODE  
Super-junction MOSFETs by trench fill system requires void-free filling epitaxial growth. This may require alignment of plane orientations of trenches in a given direction. Particularly, when...
US20140159103 PARTIAL SOI ON POWER DEVICE FOR BREAKDOWN VOLTAGE IMPROVEMENT  
The present disclosure relates to a method and apparatus to increase breakdown voltage of a semiconductor power device. A bonded wafer is formed by bonding a device wafer to a handle wafer with an...
US20140159107 SEMICONDUCTOR DEVICE  
Some aspects of the invention include a trench gate structure including a p base layer, an n+ emitter region, a trench, a gate oxide film, and a doped polysilicon gate electrode is provided in an...
US20090309131 IGBT TRANSISTOR WITH PROTECTION AGAINST PARASITIC COMPONENT ACTIVATION AND MANUFACTURING PROCESS THEREOF  
An IGBT transistor includes a drift region, at least one body region housed in the drift region and having a first type of conductivity, and a conduction region, which crosses the body region in a...
US20100193835 Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemes  
A trench insulation gate bipolar transistor (IGBT) power device includes a plurality of trench gates surrounded by emitter regions of a first conductivity type near a top surface of a...
US20110233605 Semiconductor power device layout for stress reduction  
A semiconductor power device layout with stripe cell structures is disclosed. The inventive structure applies horizontal gate trenches array and vertical gate trenches array alternatively arranged...
US20150048413 SEMICONDUCTOR DEVICE  
A semiconductor device includes: a drift layer; a base layer arranged in a surface portion of the drift layer; multiple trenches penetrating the base layer and reaching the drift layer; and a gate...
US20090194786 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME  
A semiconductor device includes deep first field limiting rings, shallow second field limiting rings, insulation films covering each surface portion of each of the first and the second field...
US20120091502 SEMICONDUCTOR DEVICE HAVING PLURAL INSULATED GATE SWITCHING CELLS AND METHOD FOR DESIGNING THE SAME  
In a semiconductor device including a plurality of insulated gate switching cells each of which has a gate electrode, an emitter electrode that is commonly provided to cover the plurality of...
US20100025725 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF  
A semiconductor device has a drift region (20) (third semiconductor region) of an n-type (first conductivity type); a body region (50) (second semiconductor region) of a p-type (second...
US20110018608 Bipolar Transistor, Band-Gap Reference Circuit and Virtual Ground Reference Circuit  
The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground...
US20130256744 IGBT with Buried Emitter Electrode  
There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a collector at a bottom surface of a...
US20100230747 PROCESS FOR MANUFACTURING A POWER DEVICE WITH A TRENCH-GATE STRUCTURE AND CORRESPONDING DEVICE  
An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first...
US20100244091 INSULATED GATE BIPOLAR TRANSISTOR  
In some embodiments, an insulated gate bipolar transistor includes a drift layer, insulation gates formed at a principle surface portion of the drift layer, base regions formed in a between-gate...
US20100001315 SEMICONDUCTOR DEVICE  
A semiconductor device includes a first diffusion region of a second conductivity type formed in an upper portion of a semiconductor substrate of a first conductivity type, a second diffusion...
US20140151743 ELECTROSTATIC DISCHARGE PROTECTION DEVICE  
An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first...
US20120153348 INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF  
A trench gate IGBT designed to reduce on-state voltage while maintaining the withstand voltage, including a first drift layer formed on a first main surface of a buffer layer, a second drift layer...
US20100283082 Bipolar Transistor with Depleted Emitter  
This invention discloses a novel apparatus of fully depleted emitter so that the built-in potential between emitter and the base becomes lower and the charge storage between the emitter and base...