Matches 1 - 26 out of 26


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US20160093624 Thyristor Volatile Random Access Memory and Methods of Manufacture  
A volatile memory array using vertical thyristors is disclosed together with methods of fabricating the array.
US20120139004 HIGH-PERFORMANCE ONE-TRANSISTOR MEMORY CELL  
One aspect of this disclosure relates to a memory cell. In various embodiments, the memory cell includes an access transistor having a floating node, and a diode connected between the floating...
US20140103392 SEMICONDUCTOR DEVICE  
A semiconductor device comprises a vertical MOS transistor including a semiconductor substrate having a silicon pillar, a gate electrode formed along a sidewall of the silicon pillar, a gate...
US20120211799 POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING A POWER SEMICONDUCTOR MODULE  
A power semiconductor module including a semiconductor device (e.g., an insulated gate bipolar transistor (IGBT), a reverse conductive (RC IGBT), or a bi-mode insulated gate transistor (BIGT))...
US20070040185 Semiconductor device and capacitance regulation circuit  
According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control...
US20090289276 SEMICONDUCTOR DEVICE  
A semiconductor device is provided. On one main surface side of an n-type semiconductor substrate, a p-type diffusion region to serve as an anode of a diode is formed. A guard ring formed of a...
US20080246055 SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD  
A semiconductor component comprising a monocrystalline semiconductor body, and to a method for producing the same is disclosed. In one embodiment, the semiconductor body has a semiconductor...
US20080308839 INSULATED GATE BIPOLAR TRANSISTOR  
The invention realizes IGBT having an NPT structure which has a smaller variation in switching characteristics and the like and lower on-resistance. In the IGBT of the invention, by setting a...
US20080042165 Semiconductor device and method for manufacturing semiconductor device  
A semiconductor device includes a thyristor configured to be formed through sequential joining of a first region of a first conductivity type, a second region of a second conductivity type...
US20080296611 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
A semiconductor device includes: a semiconductor layer having a first major surface, a second major surface provided on opposite side of the first major surface, and a channel formation region...
US20160379984 Thyristor Memory Cell with Gate in Trench Adjacent the Thyristor  
A volatile memory array using vertical thyristors with gates, NMOS or PMOS, in trenches adjacent the thyristors is disclosed together with methods of fabricating the array.
US20090001410 Driver Circuit and Electrical Power Conversion Device  
An electrical power conversion device includes: a switching element in which a principal electrical current flows in a direction from a second electrode towards a first electrode based upon a...
US20080157117 Insulated gate bipolar transistor with enhanced conductivity modulation  
A insulated gate bipolar transistors (IGBT) having an enhanced modulation layer provides reduced on-state power dissipation and better conductivity modulation than conventional devices. The IGBT...
US20110215373 SYSTEM AND METHOD FOR MANUFACTURING DOUBLE EPI N-TYPE LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR TRANSISTORS  
A system and a method are disclosed for manufacturing double epitaxial layer N-type lateral diffusion metal oxide semiconductor transistors. In one embodiment two N-type buried layers are used to...
US20110215372 ESD Protection Devices  
An ESD protection device is provided. The ESD protection device comprises an SCR and an ESD detection circuit. The SCR is coupled between a high voltage and a ground and has a special...
US20080315246 TRANSISTOR SWITCH CIRCUIT AND SAMPLE-AND-HOLD CIRCUIT  
A transistor switch circuit includes: a MOS transistor in which a channel is formed when a gate-source voltage is zero; and a voltage supply part which is connected to a gate of the MOS transistor...
US20150255586 SEMICONDUCTOR DEVICE  
According to one embodiment, a semiconductor device includes an optional first electrode, a second electrode, a first and a third semiconductor region of a first conductivity type, a second...
US20110284949 VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME  
A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer...
US20160141287 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT, STRUCTURE AND METHOD OF MAKING THE SAME  
An ESD structure, including a first conductive type substrate, a second conductive type well region in the substrate, first/second doped regions (the first type), fourth to sixth doped regions...
US20070045657 Semiconductor substrate, semiconductor device, manufacturing method thereof, and method for designing semiconductor substrate  
A semiconductor substrate, includes: a capacitance-adjusting semiconductor layer which is disposed in a predetermined region on a semiconductor substrate material and which is sufficiently thick...
US20070018194 Driving circuit  
When a PWM command signal reaches a low level, an input transistor turns on, an on-driving transistor turns off, Darlington-connected off-driving transistors connected in series with the...
US20070170461 Gallium nitride-based compound semiconductor light-emitting device  
An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having a positive electrode that exhibits low contact resistance with a p-type...
US20090065802 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME  
Disclosed herein is a semiconductor device including: an element forming region of a semiconductor substrate isolated by an element isolating region formed in the semiconductor substrate; an...
US20130032854 Rectirier  
The rectifier in this invention is connected in series with two field effect transistor, comprises: the source S1 of first N-channel FET F1 and the source S2 of second N-channel FET F2 are...
US20070114565 Integrated field-effect transistor-thyristor device  
An integrated FET-thyristor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed in the substrate proximate an...
US20160204240 POWER SEMICONDUCTOR DEVICE  
A power semiconductor device is provided comprising: a collector electrode, a collector layer of a second conductivity type, a drift layer of a first conductivity type, a base layer of the second...

Matches 1 - 26 out of 26