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US20120104457 |
POWER SWITCHING ASSEMBLY HAVING A ROBUST GATE CONNECTION
A structurally robust power switching assembly, that has a power transistor, comprising a thin and delicate layer of metal oxide, and a major surface of the layer of metal oxide being... |
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US20110012667 |
Zero Power Drain Pushbutton On Switch
A normally-open pushbutton switch is coupled to and cooperates with a pair of MOSFETs to provide a power on switch function for a personal audio device that does not require power to be drawn from... |
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US20110156093 |
HIGH-VOLTAGE POWER TRANSISTOR USING SOI TECHNOLOGY
The power transistor configured to be integrated into a trench-isolated thick layer SOI-technology with an active silicon layer with a thickness of about 50 μm. The power transistor may have a... |
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US20130320396 |
MUTUAL BALLASTING MULTI-FINGER BIDIRECTIONAL ESD DEVICE
An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a... |
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US20130032854 |
Rectirier
The rectifier in this invention is connected in series with two field effect transistor, comprises: the source S1 of first N-channel FET F1 and the source S2 of second N-channel FET F2 are... |
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US20130234199 |
ESD Protection Circuit
One embodiment of the disclosure provides an electrostatic discharge protection circuit. The electrostatic discharge protection circuit includes a p-type field effect transistor, a capacitance... |
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US20080246055 |
SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD
A semiconductor component comprising a monocrystalline semiconductor body, and to a method for producing the same is disclosed. In one embodiment, the semiconductor body has a semiconductor... |
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US20110180842 |
HIGH VOLTAGE SCRMOS IN BiCMOS PROCESS TECHNOLOGIES
An integrated circuit containing an SCRMOS transistor. The SCRMOS transistor has one drain structure with a centralized drain diffused region and distributed SCR terminals, and a second drain... |
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US20140197450 |
ESD PROTECTION CIRCUIT
An electrostatic discharge (ESD) protection circuit is coupled between first and second pads to protect an internal circuit therebetween. Under a normal operating condition, a voltage on the first... |
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US20130140601 |
Recessed Channel Negative Differential Resistance-Based Memory Cell
The disclosed recessed thyristor-based memory cell comprises in one embodiment a conductive plug recessed into the bulk of the substrate, which is coupled to or comprises the enable gate of the... |
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US20080290366 |
Soi Vertical Bipolar Power Component
An SOI device comprises an isolation trench defining a vertical drift zone, a buried insulating layer to which the isolation trench extends, and an electrode region for emitting charge carriers... |
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US20130341641 |
RECTIFIER CIRCUIT
A rectifier circuit has a rectifier element and a unipolar field-effect transistor connected in series between a first terminal and a second terminal. The rectifier element comprises a first... |
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US20100295092 |
INTEGRATED PMOS TRANSISTOR AND SCHOTTKY DIODE
The present invention discloses an integrated PMOS transistor and Schottky diode, comprising a PMOS transistor which includes a gate, a source, a drain and a channel region between the source and... |
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US20080191238 |
Bipolar Mosfet Devices and Methods For Their Use
According to the invention there is provided a semiconductor device including: at least one cell including a base region of a first conductivity type having disposed therein at least one emitter... |
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US20110127574 |
DEVICE FOR PREVENTING CURRENT-LEAKAGE
A device for preventing current-leakage is located between a transistor and a capacitor of a memory cell. The two terminals of the device for preventing current-leakage are respectively connected... |
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US20130168728 |
LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
A lateral insulated-gate bipolar transistor includes a buried insulation layer which opens only part of the collector ion implantation region and isolates the other regions, thereby reducing the... |
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US20090032838 |
SYMMETRIC BIDIRECTIONAL SILICON-CONTROLLED RECTIFIER
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a... |
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US20150014740 |
Monolithic Composite III-Nitride Transistor with High Voltage Group IV Enable Switch
There are disclosed herein various implementations of a monolithically integrated component. In one exemplary implementation, such a monolithically integrated component includes an enhancement... |
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US20090146154 |
Transistor with A-Face Conductive Channel and Trench Protecting Well Region
A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state.... |
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US20090167662 |
POWER MOSFET INTEGRATION
A cellular transistor includes an N-type heavily doped (N+) buried layer (NBL), an N-well connected to the NBL, an N+ layer connected to the N-well and multiple drains. The N-well is formed after... |
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US20080315246 |
TRANSISTOR SWITCH CIRCUIT AND SAMPLE-AND-HOLD CIRCUIT
A transistor switch circuit includes: a MOS transistor in which a channel is formed when a gate-source voltage is zero; and a voltage supply part which is connected to a gate of the MOS transistor... |
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US20110215372 |
ESD Protection Devices
An ESD protection device is provided. The ESD protection device comprises an SCR and an ESD detection circuit. The SCR is coupled between a high voltage and a ground and has a special... |
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US20060071236 |
Integrated circuit
The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12),... |
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US20090085059 |
SEMICONDUCTOR DEVICE INCLUDING ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
A SGPMOS transistor includes a base, a P-type diffusion layer, a gate electrode, and a LOCOS oxide film. The base includes at least one of a N-type semiconductor substrate, a P-type semiconductor... |
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US20140299913 |
INTEGRATED CIRCUITS USING GUARD RINGS FOR ESD SYSTEMS, AND METHODS FOR FORMING THE INTEGRATED CIRCUITS
An integrated circuit includes at least one transistor over a substrate, and a first guard ring disposed around the at least one transistor. The integrated circuit further includes a second guard... |
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US20090212320 |
Semiconductor devices and semiconductor apparatuses including the same
Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed... |
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US20090294798 |
Bipolar Device Compatible with CMOS Process Technology
A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on the semiconductor substrate; a gate... |
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US20090206363 |
SOLID-STATE SWITCH CAPABLE OF BIDIRECTIONAL OPERATION
A monolithic switching device including a main semiconductor region configured to provide a current-carrying channel as in the form of two-dimensional electron gas. Disposed symmetrically on a... |
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US20070018194 |
Driving circuit
When a PWM command signal reaches a low level, an input transistor turns on, an on-driving transistor turns off, Darlington-connected off-driving transistors connected in series with the... |
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US20080042164 |
POWER SEMICONDUCTOR COMPONENT
A power semiconductor component is disclosed. One embodiment provides a semiconductor body, in which at least two vertical power semiconductor components are arranged. Each of the vertical power... |
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US20080157117 |
Insulated gate bipolar transistor with enhanced conductivity modulation
A insulated gate bipolar transistors (IGBT) having an enhanced modulation layer provides reduced on-state power dissipation and better conductivity modulation than conventional devices. The IGBT... |
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US20150236010 |
ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE
The electrostatic discharge protection structure includes an N-well disposed on a substrate, a P-well disposed on the substrate and adjacent to the N-well, a first doped region of N-type... |
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US20070221949 |
Power Semiconductor Devices
This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits. The techniques we describe are particularly useful for so-called... |
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US20100084631 |
Phase-controlled field effect transistor device and method for manufacturing thereof
A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting... |
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US20140027781 |
MONOLITHIC BIDIRECTIONAL SILICON CARBIDE SWITCHING DEVICES AND METHODS OF FORMING THE SAME
A monolithic bidirectional switching device includes a drift layer having a first conductivity type and having an upper surface, and first and second vertical metal-oxide semiconductor (MOS)... |
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US20090309129 |
Semiconductor ESD Device and Method of Making Same
A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device... |
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US20090032839 |
Semiconductor Device and Its Driving Method
A semiconductor device having a thyristor SCR with reduced turn-off time. A third semiconductor region of the second conductivity type (anode AN) and a fourth semiconductor region of the first... |
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US20090001410 |
Driver Circuit and Electrical Power Conversion Device
An electrical power conversion device includes: a switching element in which a principal electrical current flows in a direction from a second electrode towards a first electrode based upon a... |
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US20130285113 |
BIDIRECTIONAL ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE
A bidirectional electrostatic discharge (ESD) protection device includes a substrate having a topside semiconductor surface that includes a first silicon controlled rectifier (SCR) and a second... |
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US20090316492 |
MEMORY CELLS, MEMORY CELL ARRAYS, METHODS OF USING AND METHODS OF MAKING
A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity... |
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US20080308838 |
Power switching transistors
In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source,... |
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US20080048208 |
ELECTROSTATIC DISCHARGE PROTECTION DEVICE FOR AN INTEGRATED CIRCUIT
An integrated circuit is made of a semiconductor material and comprises an input and/or output terminal connected to an output transistor forming a parasitic element capable of triggering itself... |
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US20090261379 |
SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION
A semiconductor device includes an active region with a vertical drift path of a first conduction type and with a near-surface lateral well of a second, complementary conduction type. In addition,... |
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US20140291721 |
Surge Protection Circuit for Power MOSFETs used as Active Bypass Diodes in Photovoltaic Solar Power Systems
A protection circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs) that are used as active bypass diodes in photovoltaic solar power systems is disclosed. The protection circuit... |
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US20090278166 |
SEMICONDUCTOR DEVICE
A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part... |
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US20080308839 |
INSULATED GATE BIPOLAR TRANSISTOR
The invention realizes IGBT having an NPT structure which has a smaller variation in switching characteristics and the like and lower on-resistance. In the IGBT of the invention, by setting a... |
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US20120168817 |
LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) HAVING A HIGH DRAIN-TO-BODY BREAKDOWN VOLTAGE (Vb), A METHOD OF FORMING AN LEDMOSFET, AND A SILICON-CONTROLLED RECTIFIER (SCR) INCORPORATING A COMPLEMENTARY PAIR OF LEDMOSFETS
Disclosed are embodiments of a lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage. Discrete conductive field (CF)... |
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US20090050931 |
SWITCHING ASSEMBLY FOR AN AIRCRAFT IGNITION SYSTEM
A switching assembly is disclosed for a high voltage aircraft ignition system. The switching assembly includes a ceramic substrate and switch die that includes an anode bonded to an electrical pad... |
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US20070114565 |
Integrated field-effect transistor-thyristor device
An integrated FET-thyristor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed in the substrate proximate an... |
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US20120061720 |
VTS insulated gate bipolar transistor
In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift... |