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US20160093624 |
Thyristor Volatile Random Access Memory and Methods of Manufacture
A volatile memory array using vertical thyristors is disclosed together with methods of fabricating the array. |
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US20120139004 |
HIGH-PERFORMANCE ONE-TRANSISTOR MEMORY CELL
One aspect of this disclosure relates to a memory cell. In various embodiments, the memory cell includes an access transistor having a floating node, and a diode connected between the floating... |
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US20140103392 |
SEMICONDUCTOR DEVICE
A semiconductor device comprises a vertical MOS transistor including a semiconductor substrate having a silicon pillar, a gate electrode formed along a sidewall of the silicon pillar, a gate... |
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US20120211799 |
POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING A POWER SEMICONDUCTOR MODULE
A power semiconductor module including a semiconductor device (e.g., an insulated gate bipolar transistor (IGBT), a reverse conductive (RC IGBT), or a bi-mode insulated gate transistor (BIGT))... |
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US20070040185 |
Semiconductor device and capacitance regulation circuit
According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control... |
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US20090289276 |
SEMICONDUCTOR DEVICE
A semiconductor device is provided. On one main surface side of an n-type semiconductor substrate, a p-type diffusion region to serve as an anode of a diode is formed. A guard ring formed of a... |
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US20080246055 |
SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD
A semiconductor component comprising a monocrystalline semiconductor body, and to a method for producing the same is disclosed. In one embodiment, the semiconductor body has a semiconductor... |
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US20080308839 |
INSULATED GATE BIPOLAR TRANSISTOR
The invention realizes IGBT having an NPT structure which has a smaller variation in switching characteristics and the like and lower on-resistance. In the IGBT of the invention, by setting a... |
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US20080042165 |
Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes a thyristor configured to be formed through sequential joining of a first region of a first conductivity type, a second region of a second conductivity type... |
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US20080296611 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes: a semiconductor layer having a first major surface, a second major surface provided on opposite side of the first major surface, and a channel formation region... |
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US20160379984 |
Thyristor Memory Cell with Gate in Trench Adjacent the Thyristor
A volatile memory array using vertical thyristors with gates, NMOS or PMOS, in trenches adjacent the thyristors is disclosed together with methods of fabricating the array. |
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US20090001410 |
Driver Circuit and Electrical Power Conversion Device
An electrical power conversion device includes: a switching element in which a principal electrical current flows in a direction from a second electrode towards a first electrode based upon a... |
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US20080157117 |
Insulated gate bipolar transistor with enhanced conductivity modulation
A insulated gate bipolar transistors (IGBT) having an enhanced modulation layer provides reduced on-state power dissipation and better conductivity modulation than conventional devices. The IGBT... |
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US20110215373 |
SYSTEM AND METHOD FOR MANUFACTURING DOUBLE EPI N-TYPE LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR TRANSISTORS
A system and a method are disclosed for manufacturing double epitaxial layer N-type lateral diffusion metal oxide semiconductor transistors. In one embodiment two N-type buried layers are used to... |
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US20110215372 |
ESD Protection Devices
An ESD protection device is provided. The ESD protection device comprises an SCR and an ESD detection circuit. The SCR is coupled between a high voltage and a ground and has a special... |
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US20080315246 |
TRANSISTOR SWITCH CIRCUIT AND SAMPLE-AND-HOLD CIRCUIT
A transistor switch circuit includes: a MOS transistor in which a channel is formed when a gate-source voltage is zero; and a voltage supply part which is connected to a gate of the MOS transistor... |
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US20150255586 |
SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes an optional first electrode, a second electrode, a first and a third semiconductor region of a first conductivity type, a second... |
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US20110284949 |
VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME
A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer... |
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US20160141287 |
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT, STRUCTURE AND METHOD OF MAKING THE SAME
An ESD structure, including a first conductive type substrate, a second conductive type well region in the substrate, first/second doped regions (the first type), fourth to sixth doped regions... |
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US20070045657 |
Semiconductor substrate, semiconductor device, manufacturing method thereof, and method for designing semiconductor substrate
A semiconductor substrate, includes: a capacitance-adjusting semiconductor layer which is disposed in a predetermined region on a semiconductor substrate material and which is sufficiently thick... |
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US20070018194 |
Driving circuit
When a PWM command signal reaches a low level, an input transistor turns on, an on-driving transistor turns off, Darlington-connected off-driving transistors connected in series with the... |
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US20070170461 |
Gallium nitride-based compound semiconductor light-emitting device
An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having a positive electrode that exhibits low contact resistance with a p-type... |
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US20090065802 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Disclosed herein is a semiconductor device including: an element forming region of a semiconductor substrate isolated by an element isolating region formed in the semiconductor substrate; an... |
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US20130032854 |
Rectirier
The rectifier in this invention is connected in series with two field effect transistor, comprises: the source S1 of first N-channel FET F1 and the source S2 of second N-channel FET F2 are... |
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US20070114565 |
Integrated field-effect transistor-thyristor device
An integrated FET-thyristor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed in the substrate proximate an... |
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US20160204240 |
POWER SEMICONDUCTOR DEVICE
A power semiconductor device is provided comprising: a collector electrode, a collector layer of a second conductivity type, a drift layer of a first conductivity type, a base layer of the second... |