Matches 1 - 31 out of 31


Match Document Document Title
US20140332842 PACKAGED OVERVOLTAGE PROTECTION CIRCUIT FOR TRIGGERING THYRISTORS  
In a first embodiment, an ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than...
US20130009204 BIDIRECTIONAL DUAL-SCR CIRCUIT FOR ESD PROTECTION  
An ESD protection circuit includes a pad of an IC, circuitry coupled to the pad for buffering data, an RC power clamp on the IC, and first and second silicon controlled rectifier (SCR) circuits....
US20130320396 MUTUAL BALLASTING MULTI-FINGER BIDIRECTIONAL ESD DEVICE  
An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a...
US20110241067 Gate Controlled Atomic Switch  
The invention relates to a method for producing a switch element. The invention is characterized in that the switch element comprises three electrodes that are located in an electrolyte, two of...
US20140217461 BIDIRECTIONAL DUAL-SCR CIRTCUIT FOR ESD PROTECTION  
An ESD protection circuit includes at least a first and a second silicon controlled rectifier (SCR) circuits. The first SCR circuit is coupled between the pad and the positive power supply...
US20120146089 FOUR-QUADRANT TRIAC  
A vertical four-quadrant triac wherein the gate region, arranged on the side of a front surface, includes a U-shaped region of a first conductivity type, the base of the U lying against one side...
US20110284922 DEVICES WITH ADJUSTABLE DUAL-POLARITY TRIGGER-AND HOLDING-VOTAGE/CURRENT FOR HIGH LEVEL OF ELECTROSTATIC DISCHARGE PROTECTION IN SUB-MICRON MIXED SIGNAL CMOS/BICMOS INTEGRATED  
Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron...
US20150002035 DIRECT DRIVE LED DRIVER AND OFFLINE CHARGE PUMP AND METHOD THEREFOR  
In one embodiment, a Light Emitting Diode (LED) driving device for driving a plurality of LEDs has a switching matrix utilizing a plurality of one of a turn off thyristors or turn off triacs...
US20140034995 ACTIVE EDGE STRUCTURES PROVIDING UNIFORM CURRENT FLOW IN INSULATED GATE TURN-OFF THYRISTORS  
An insulated gate turn-off thyristor, formed as a die, has a layered structure including a p+ layer (e.g., a substrate), an n− layer, a p-well, vertical insulated gate regions formed in the...
US20130228822 VERTICAL POWER COMPONENT  
A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in...
US20130105855 GATE AMPLIFICATION TRIAC  
A gate amplification triac including in a semiconductor substrate of a first conductivity type a vertical triac and a lateral bipolar transistor having its emitter connected to the triac gate, its...
US20060278889 Power rectifier and manufacturing method thereof  
A power rectifier and its manufacturing method are proposed in the present invention. A cylinder-shaped PN junction is formed during the manufacturing process of the power rectifier. Via the...
US20140097464 Electronic Device for Protection against Electrostatic Discharges, with a Concentric Structure  
The component incorporates, in topological terms, a scalable number of triac structures in a concentric annular arrangement. The component can be used with an electronic device to protect against...
US20140138735 JUNCTION-ISOLATED BLOCKING VOLTAGE DEVICES WITH INTEGRATED PROTECTION STRUCTURES AND METHODS OF FORMING THE SAME  
Junction-isolated blocking voltage devices and methods of forming the same are provided. In certain implementations, a blocking voltage device includes an anode terminal electrically connected to...
US20080277687 High power density switch module with improved thermal management and packaging  
A semiconductor power device, e.g., an Insulated Gate Bi-polar Transistor (IGBT) or a Metal-Oxide Field Effect Transistor (MOSFET) may be constructed in a reusable and repairable cost-effective...
US20120056238 BIDIRECTIONAL SILICON-CONTROLLED RECTIFIER  
A bidirectional silicon-controlled rectifier, wherein the conventional field oxide layer, which separates an anode structure from a cathode structure, is replaced by a field oxide layer having...
US20150108537 HIGH-VOLTAGE VERTICAL POWER COMPONENT  
A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at...
US20110049561 Solid-State Pinch Off Thyristor Circuits  
Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to...
US20090267110 INTEGRATED LOW LEAKAGE SCHOTTKY DIODE  
An integrated low leakage Schottky diode has a Schottky barrier junction proximate one side of an MOS gate with one end of a drift region on an opposite side of the gate. Below the Schottky metal...
US20120286321 High-Performance Device for Protection from Electrostatic Discharge  
The semiconductor device for protection from electrostatic discharges comprises several modules (MDi) for protection from electrostatic discharges comprising triggerable elements (TRi) coupled...
US20140299912 SILICON-CONTROLLED-RECTIFIER WITH ADJUSTABLE HOLDING VOLTAGE  
In a silicon-controlled-rectifier (SCR) with adjustable holding voltage, an epitaxial layer is formed on a heavily doped semiconductor layer. A first N-well having a first P-heavily doped area is...
US20070018193 Initial-on SCR device for on-chip ESD protection  
A semiconductor device for electrostatic discharge (ESD) protection comprises a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a...
US20110210372 HIGH-VOLTAGE VERTICAL POWER COMPONENT  
A high-voltage vertical power component including a lightly-doped semiconductor substrate of a first conductivity type and, on the side of an upper surface, an upper semiconductor layer of the...
US20140131764 STRUCTURES AND TECHNIQUES FOR USING SEMICONDUCTOR BODY TO CONSTRUCT SCR, DIAC, OR TRIAC  
Switch devices, such as Silicon Controlled Rectifier (SCR), DIAC, or TRIAC, on a semiconductor body are disclosed. P/N junctions can be built on a semiconductor body, such as polysilicon or active...
US20110284921 HF-CONTROLLED BIDIRECTIONAL SWITCH  
A bidirectional switch controllable by a voltage between its gate and rear electrode and including an N-type semiconductor substrate surrounded with a P-type well; on the front surface side, a...
US20170018619 Self-Aligned Dual Trench Device  
A power MOSFET or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed with a two-step etching process as...
US20160329417 BIDIRECTIONAL POWER SWITCH  
A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor...
US20160118485 HIGH-VOLTAGE VERTICAL POWER COMPONENT  
A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at...
US20160027907 BIDIRECTIONAL SWITCH  
A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between...
US20160027774 BIDIRECTIONAL SWITCH  
A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common...
US20150303199 MEMORY STRUCTRUE AND OPERATION METHOD THEREOF  
This invention provides a memory structure and an operation method thereof. The memory structure includes a triode for alternating current (TRIAC) and a memory cell. The memory cell is...

Matches 1 - 31 out of 31