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US20120264303 CHEMICAL MECHANICAL POLISHING SLURRY, SYSTEM AND METHOD  
A metal polishing slurry includes a chemical solution and abrasives characterized by a bimodal or other multimodal distribution of particle sizes or a prevalence of two or more particle sizes or...
US20150017454 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A PROTEIN  
Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous...
US20130092651 SLURRY FOR CHEMICAL-MECHANICAL POLISHING OF COPPER AND USE THEREOF  
A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The...
US20110117821 CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME, AND METHOD OF RECYCLING CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION  
A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains, (B) an organic acid, and (C1) copper ions or (C2) at least one kind of metal atoms selected from Ta, Ti, and Rb,...
US20130078811 SLURRY FOR CHEMICAL-MECHANICAL POLISHING OF METALS AND USE THEREOF  
A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an...
US20150060400 POLISHING COMPOSITION  
The present invention provides a polishing composition that can suppress generation of bumps due to etching on a surface of an object to be polished having a germanium material-containing part...
US20110059680 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD  
A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.
US20140166613 STRUCTURING OF ANTISTATIC AND ANTIREFLECTION COATINGS AND OF CORRESPONDING STACKED LAYERS  
The present invention relates to compositions which are particularly suitable for the etching and structuring of transparent, conductive antireflection coatings and of corresponding stacked...
US20120094490 Slurry For Chemical Mechanical Polishing  
The present invention relates to a slurry for chemical mechanical polishing, comprising an abrasive; an oxidant; an organic acid; and a polymeric additive comprising polyolefin-polyalkyleneoxide...
US20130344777 POLISHING COMPOSITION, METHOD FOR FABRICATING THEREOF AND METHOD OF CHEMICAL MECHANICAL POLISHING USING THE SAME  
Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition....
US20110250754 Polishing Composition and Polishing Method  
A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as...
US20150004788 Chemical Mechanical Polishing Slurry Compositions and Method Using the Same for Copper and Through-Silicon Via Applications  
Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior...
US20140263170 METHODS OF POLISHING SAPPHIRE SURFACES  
Described herein are compositions, kits and methods for polishing sapphire surfaces using compositions having colloidal aluminosilicate particles in an aqueous acidic solution. In some aspects,...
US20130189843 SLURRY FOR PLANARIZING PHOTORESIST  
A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.
US20120270401 CHEMICAL MECHANICAL POLISHING SLURRY, ITS PREPARATION METHOD AND USE FOR THE SAME  
A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a...
US20150159047 POLISHING COMPOSITION AND POLISHING METHOD  
A polishing composition contains cerium oxide particles, at least one selected from a methonium compound and an alkanolamine compound which is a primary or secondary alkanolamine compound, and a...
US20130178064 POLISHING SLURRY AND CHEMICAL MECHANICAL PLANARIZATION METHOD USING THE SAME  
A polishing slurry for a chemical mechanical planarization process includes polishing particles and polyhedral nanoscale particles having a smaller size than the polishing particles and including...
US20110070737 METHOD FOR PREPARING OF CERIUM OXIDE POWDER FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING OF CHEMICAL MECHANICAL POLISHING SLURRY USING THE SAME  
The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing...
US20050274696 Single-acid compensating system  
A single-acid compensating system (20) includes an etching unit (201), and a monitoring and compensating unit (202). The etching unit includes an acid-mixing tank (212). The monitoring and...
US20120175550 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME  
A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B) a compound that includes two or more carboxyl groups, a particle size (Db) of the silica particles (A)...
US20130171823 CMP Slurry Composition and Polishing Method Using the Same  
A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer...
US20110081780 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD  
A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a...
US20110053462 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD  
A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica...
US20140209566 CHEMICAL-MECHANICAL POLISHING COMPOSITION CONTAINING ZIRCONIA AND METAL OXIDIZER  
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing...
US20120231630 Etching Gas  
Disclosed is an etching gas provided containing CHF2COF. The etching gas may contain, as an additive, at least one kind of gas selected from O2, O3, CO, CO2, F2, NF3, Cl2, Br2, I2, XFn (In this...
US20130056438 COMPOSITION AND METHOD FOR MICRO ETCHING OF COPPER AND COPPER ALLOYS  
Disclosed is a composition for and applying said method for micro etching of copper or copper alloys during manufacture of printed circuit boards. Said composition comprises a copper salt, a...
US20120270400 SLURRY FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD FOR SUBSTRATE USING SAME  
The present invention provides a slurry for chemical mechanical polishing comprising water-soluble clathrate compound (a), polymer compound (b) having an acidic group optionally in a salt form as...
US20120042575 CMP SLURRY RECYCLING SYSTEM AND METHODS  
The present invention provides a system and method for recycling an abrasive chemical mechanical polishing (CMP) slurry after polishing substrates therewith. The method comprises circulating the...
US20150159048 POLISHING COMPOSITION AND POLISHING METHOD  
A polishing composition contains cerium oxide particles of 50 nm or more to 160 nm or less in average secondary particle diameter and at least one kind of nitride film polishing accelerating agent...
US20150104941 BARRIER CHEMICAL MECHANICAL PLANARIZATION COMPOSITION AND METHOD THEREOF  
A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are organic polymer molecules containing...
US20150104940 BARRIER CHEMICAL MECHANICAL PLANARIZATION COMPOSITION AND METHOD THEREOF  
A barrier chemical mechanical planarization polishing composition is provided that includes the suitable chemical additives. The suitable chemical additives are organic polymer molecules...
US20140264151 AQUEOUS CLEANING COMPOSITION FOR POST COPPER CHEMICAL MECHANICAL PLANARIZATION  
An aqueous cleaning composition for post copper chemical mechanical planarization is provided. The composition comprises an organic base, a copper etchant, an organic ligand, a corrosion...
US20130005219 CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME  
A chemical mechanical polishing aqueous dispersion includes (A) silica particles that include at least one functional group selected from the group consisting of a sulfo group or salts thereof,...
US20120153218 POLISHING COMPOSITION  
To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A...
US20090032765 Selective barrier polishing slurry  
The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 30...
US20130005149 CHEMICAL-MECHANICAL PLANARIZATION OF SUBSTRATES CONTAINING COPPER, RUTHENIUM, AND TANTALUM LAYERS  
A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized...
US20110312181 METHOD FOR CHEMICAL MECHANICAL PLANARIZATION OF A COPPER-CONTAINING SUBSTRATE  
A method using an associated composition for chemical mechanical planarization of a copper-containing substrate affords high copper removal rates and low dishing values during CMP processing of...
US20130214199 CMP SLURRY COMPOSITION FOR TUNGSTEN  
The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in...
US20140342562 POLISHING COMPOSITION  
A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The...
US20110269312 CHEMICAL MECHANICAL POLISHING (CMP) POLISHING SOLUTION WITH ENHANCED PERFORMANCE  
This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition...
US20150247063 Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof  
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical...
US20140374378 Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof  
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical...
US20140110626 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR SHALLOW TRENCH ISOLATION (STI) APPLICATIONS AND METHODS OF MAKING THEREOF  
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical...
US20140342561 POLISHING COMPOSITION  
A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive...
US20140264152 Chemistry and Compositions for Manufacturing Integrated Circuits  
In the manufacture of integrated circuits, reactive compositions that include a reactive etchant species and an oxygen-containing species can provide selective removal of target material and can...
US20150184029 POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE  
The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with...
US20130244431 SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE  
The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a)...
US20130143404 SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE  
The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a)...
US20130130501 SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE  
The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a)...
US20120315763 POLISHING LIQUID FOR CMP AND POLISHING METHOD USING THE SAME  
An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for...