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US20090029553 Free radical-forming activator attached to solid and used to enhance CMP formulations  
The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The...
US20090224200 POLISHING SLURRIES FOR CHEMICAL-MECHANICAL POLISHING  
The aqueous slurries according to the present invention include soluble salts of molybdenum dissolved in an oxidizing agent and deionized water. Other aqueous polishing slurries include dissolved...
US20050269295 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate  
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the...
US20150322576 Methods and Compositions for Acid Treatment of a Metal Surface  
The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions...
US20130319618 Separating Fluid, Method And System For Separating Multilayer Systems  
A separating fluid, method and use for separating multilayer systems, especially photovoltaic modules, for the purpose of recycling, which allow the separation of multilayer systems. Especially...
US20120292559 Methods and Compositions for Acid Treatment of a Metal Surface  
The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions...
US20090072190 CLEANING SOLUTION FORMULATIONS FOR SUBSTRATES  
A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed...
US20070181852 PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION  
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful...
US20060118524 CERIUM OXIDE ABRASIVE AND METHOD OF POLISHING SUBSTRATES  
A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm...
US20050205837 Polishing composition and polishing method  
A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated...
US20120299158 CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT  
The CMP polishing liquid of the invention is used by mixing a first solution and a second solution, the first solution comprises cerium-based abrasive grains, a dispersant and water, the second...
US20080105652 CMP of copper/ruthenium/tantalum substrates  
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic...
US20070108404 METHOD OF SELECTIVELY DEPOSITING A THIN FILM MATERIAL AT A SEMICONDUCTOR INTERFACE  
Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a...
US20060186373 Polishing medium for chemical-mechanical polishing, and polishing method  
This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a...
US20050205835 Alkaline post-chemical mechanical planarization cleaning compositions  
A post-CMP cleaning composition and method comprising same are disclosed herein. In one aspect, there is provided a composition comprising: water, an organic base, and a plurality of chelating...
US20150361303 POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING AGENT  
Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic...
US20110008965 POLISHING COMPOSITION AND POLISHING METHOD  
To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a...
US20090130849 CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE  
A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also...
US20070295934 Polishing slurry and polishing method  
A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from...
US20060186372 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate  
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the...
US20050211950 Chemical-mechanical polishing composition and method for using the same  
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from...
US20120138851 POLISHING COMPOSITION AND POLISHING METHOD  
A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further...
US20090156008 Polishing Composition and Polishing Method Using The Same  
A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of...
US20070107750 Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers  
The present invention relates to a remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic...
US20060175298 Method and composition for polishing a substrate  
Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a...
US20060049143 Polishing composition and polishing method using the same  
A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of...
US20140191155 COMPOSITION AND METHOD FOR POLISHING POLYSILICON  
The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the...
US20140103250 COMPOSITION AND METHOD FOR POLISHING ALUMINUM SEMICONDUCTOR SUBSTRATES  
The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical...
US20140011360 CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE  
A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a...
US20130146804 POLISHING COMPOSITION AND POLISHING METHOD USING SAME  
A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is...
US20110147341 ETCHING SOLUTION FOR TITANIUM-BASED METAL, TUNGSTEN-BASED METAL, TITANIUM/TUNGSTEN-BASED METAL OR THEIR NITRIDES  
An etching solution for titanium-based metals, tungsten-based metals, titanium/tungsten-based metals or their nitrides. The etching solution contains 10-40 mass % hydrogen peroxide, 0.1-15 mass %...
US20100130013 SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING  
A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and...
US20060197054 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate  
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the...
US20140273458 Chemical Mechanical Planarization for Tungsten-Containing Substrates  
Chemical mechanical polishing (CMP) compositions for polishing tungsten or tungsten-containing substrates comprise an abrasive, at least one solid catalyst, a chemical additive selected from the...
US20130029489 POLISHING SLURRY, POLISHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE  
The present invention relates to a polishing slurry for performing chemical mechanical polishing on a surface to be polished including a surface made of silicon oxide and a surface made of metal,...
US20100301265 POLISHING SLURRY AND METHOD OF POLISHING  
A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected...
US20100055909 SEMICONDUCTOR POLISHING COMPOUND, PROCESS FOR ITS PRODUCTION AND POLISHING METHOD  
A semiconductor polishing compound comprising cerium oxide abrasive grains, water and an additive, wherein the additive is a water-soluble organic polymer such as ammonium polyacrylate or an...
US20060163206 Novel polishing slurries and abrasive-free solutions having a multifunctional activator  
The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the...
US20130327977 COMPOSITION AND METHOD FOR POLISHING MOLYBDENUM  
The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration...
US20130306238 CHEMICAL LIQUID PREPARATION METHOD OF PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, CHEMICAL LIQUID PREPARATION UNIT PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, AND SUBSTRATE PROCESSING SYSTEM  
A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid,...
US20130109180 METHOD FOR POLISHING SILICON WAFER, AND POLISHING SOLUTION FOR USE IN THE METHOD  
A to-be-polished surface of a silicon wafer is rough polished while supplying to a hard polishing cloth a polishing solution in which a water-soluble polymer has been added to an alkaline aqueous...
US20120273454 ETCHING LIQUID FOR CONDUCTIVE POLYMER, AND METHOD FOR PATTERNING CONDUCTIVE POLYMER  
An etching liquid for a conductive polymer is disclosed which comprises greater than 0.5 wt % but no greater than 30 wt % of (NH4)4Ce(S04)4.
US20110272625 Surface cleaning and texturing process for crystalline solar cells  
Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline...
US20110250754 Polishing Composition and Polishing Method  
A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as...
US20110217845 Polishing Composition and Polishing Method Using The Same  
A polishing composition is disclosed containing a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, a basic compound, and...
US20100327218 CHEMICAL SOLUTION FOR SELECTIVELY TREATING OR REMOVING A DETERIORATED LAYER AT A SURFACE OF AN ORGANIC FILM, AND METHOD FOR USING SUCH  
A method for forming an organic mask, includes: permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the...
US20100323522 Polishing composition and polishing method  
To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a...
US20090258042 Encapsulated Active Materials Containing Adjunct Crosslinkers  
It is an object of the present invention to provide a microcapsule product comprising an active material; said active material encapsulated by a polymeric material to provide a polymer...
US20080224092 Etchant for metal  
An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH4)2S2O8), an azole compound and water. The etchant does not include hydrogen peroxide. Thus, the...
US20080182422 Methods of etching photoresist on substrates  
Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a...