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US20090029553 |
Free radical-forming activator attached to solid and used to enhance CMP formulations
The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The... |
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US20090224200 |
POLISHING SLURRIES FOR CHEMICAL-MECHANICAL POLISHING
The aqueous slurries according to the present invention include soluble salts of molybdenum dissolved in an oxidizing agent and deionized water. Other aqueous polishing slurries include dissolved... |
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US20050269295 |
CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the... |
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US20150322576 |
Methods and Compositions for Acid Treatment of a Metal Surface
The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions... |
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US20130319618 |
Separating Fluid, Method And System For Separating Multilayer Systems
A separating fluid, method and use for separating multilayer systems, especially photovoltaic modules, for the purpose of recycling, which allow the separation of multilayer systems. Especially... |
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US20120292559 |
Methods and Compositions for Acid Treatment of a Metal Surface
The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions... |
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US20090072190 |
CLEANING SOLUTION FORMULATIONS FOR SUBSTRATES
A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed... |
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US20070181852 |
PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful... |
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US20060118524 |
CERIUM OXIDE ABRASIVE AND METHOD OF POLISHING SUBSTRATES
A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm... |
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US20050205837 |
Polishing composition and polishing method
A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated... |
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US20120299158 |
CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT
The CMP polishing liquid of the invention is used by mixing a first solution and a second solution, the first solution comprises cerium-based abrasive grains, a dispersant and water, the second... |
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US20080105652 |
CMP of copper/ruthenium/tantalum substrates
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic... |
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US20070108404 |
METHOD OF SELECTIVELY DEPOSITING A THIN FILM MATERIAL AT A SEMICONDUCTOR INTERFACE
Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a... |
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US20060186373 |
Polishing medium for chemical-mechanical polishing, and polishing method
This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a... |
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US20050205835 |
Alkaline post-chemical mechanical planarization cleaning compositions
A post-CMP cleaning composition and method comprising same are disclosed herein. In one aspect, there is provided a composition comprising: water, an organic base, and a plurality of chelating... |
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US20150361303 |
POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING AGENT
Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic... |
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US20110008965 |
POLISHING COMPOSITION AND POLISHING METHOD
To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a... |
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US20090130849 |
CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also... |
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US20070295934 |
Polishing slurry and polishing method
A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from... |
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US20060186372 |
CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the... |
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US20050211950 |
Chemical-mechanical polishing composition and method for using the same
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from... |
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US20120138851 |
POLISHING COMPOSITION AND POLISHING METHOD
A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further... |
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US20090156008 |
Polishing Composition and Polishing Method Using The Same
A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of... |
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US20070107750 |
Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
The present invention relates to a remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic... |
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US20060175298 |
Method and composition for polishing a substrate
Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a... |
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US20060049143 |
Polishing composition and polishing method using the same
A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of... |
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US20140191155 |
COMPOSITION AND METHOD FOR POLISHING POLYSILICON
The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the... |
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US20140103250 |
COMPOSITION AND METHOD FOR POLISHING ALUMINUM SEMICONDUCTOR SUBSTRATES
The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical... |
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US20140011360 |
CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a... |
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US20130146804 |
POLISHING COMPOSITION AND POLISHING METHOD USING SAME
A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is... |
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US20110147341 |
ETCHING SOLUTION FOR TITANIUM-BASED METAL, TUNGSTEN-BASED METAL, TITANIUM/TUNGSTEN-BASED METAL OR THEIR NITRIDES
An etching solution for titanium-based metals, tungsten-based metals, titanium/tungsten-based metals or their nitrides. The etching solution contains 10-40 mass % hydrogen peroxide, 0.1-15 mass %... |
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US20100130013 |
SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING
A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and... |
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US20060197054 |
CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the... |
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US20140273458 |
Chemical Mechanical Planarization for Tungsten-Containing Substrates
Chemical mechanical polishing (CMP) compositions for polishing tungsten or tungsten-containing substrates comprise an abrasive, at least one solid catalyst, a chemical additive selected from the... |
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US20130029489 |
POLISHING SLURRY, POLISHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
The present invention relates to a polishing slurry for performing chemical mechanical polishing on a surface to be polished including a surface made of silicon oxide and a surface made of metal,... |
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US20100301265 |
POLISHING SLURRY AND METHOD OF POLISHING
A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected... |
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US20100055909 |
SEMICONDUCTOR POLISHING COMPOUND, PROCESS FOR ITS PRODUCTION AND POLISHING METHOD
A semiconductor polishing compound comprising cerium oxide abrasive grains, water and an additive, wherein the additive is a water-soluble organic polymer such as ammonium polyacrylate or an... |
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US20060163206 |
Novel polishing slurries and abrasive-free solutions having a multifunctional activator
The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the... |
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US20130327977 |
COMPOSITION AND METHOD FOR POLISHING MOLYBDENUM
The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration... |
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US20130306238 |
CHEMICAL LIQUID PREPARATION METHOD OF PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, CHEMICAL LIQUID PREPARATION UNIT PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, AND SUBSTRATE PROCESSING SYSTEM
A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid,... |
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US20130109180 |
METHOD FOR POLISHING SILICON WAFER, AND POLISHING SOLUTION FOR USE IN THE METHOD
A to-be-polished surface of a silicon wafer is rough polished while supplying to a hard polishing cloth a polishing solution in which a water-soluble polymer has been added to an alkaline aqueous... |
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US20120273454 |
ETCHING LIQUID FOR CONDUCTIVE POLYMER, AND METHOD FOR PATTERNING CONDUCTIVE POLYMER
An etching liquid for a conductive polymer is disclosed which comprises greater than 0.5 wt % but no greater than 30 wt % of (NH4)4Ce(S04)4. |
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US20110272625 |
Surface cleaning and texturing process for crystalline solar cells
Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline... |
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US20110250754 |
Polishing Composition and Polishing Method
A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as... |
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US20110217845 |
Polishing Composition and Polishing Method Using The Same
A polishing composition is disclosed containing a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, a basic compound, and... |
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US20100327218 |
CHEMICAL SOLUTION FOR SELECTIVELY TREATING OR REMOVING A DETERIORATED LAYER AT A SURFACE OF AN ORGANIC FILM, AND METHOD FOR USING SUCH
A method for forming an organic mask, includes: permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the... |
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US20100323522 |
Polishing composition and polishing method
To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a... |
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US20090258042 |
Encapsulated Active Materials Containing Adjunct Crosslinkers
It is an object of the present invention to provide a microcapsule product comprising an active material; said active material encapsulated by a polymeric material to provide a polymer... |
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US20080224092 |
Etchant for metal
An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH4)2S2O8), an azole compound and water. The etchant does not include hydrogen peroxide. Thus, the... |
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US20080182422 |
Methods of etching photoresist on substrates
Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a... |