Matches 1 - 4 out of 4


Match Document Document Title
US20080290314 COMPOSITION FOR MANUFACTURING BARRIER RIB, AND PLASMA DISPLAY PANEL MANUFACTURED BY THE SAME  
The composition for a barrier rib of the present invention includes a metal oxide sol and a glass frit. The metal oxide sol includes a photoacid generator, and the difference between the average...
US20150207070 Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof  
The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used...
US20120326111 Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS  
A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic...
US20160093822 ORGANIC ELECTRONIC DEVICE AND ELECTRIC FIELD-INDUCED CARRIER GENERATION LAYER  
An electric field-induced carrier generation layer including a p-type material and an n-type material is provided. The p-type material and the n-type material are alternately distributed in at...
Matches 1 - 4 out of 4