Matches 1 - 21 out of 21


Match Document Document Title
US20080054196 Variable shaped electron beam lithography system and method for manufacturing substrate  
This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern...
US20060076513 Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method  
A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles is provided which is capable of highly finely conducting exposure with respect to a...
US20070235665 Charged particle beam system and method for manufacturing and inspecting LCD devices  
A layer on a large area substrate is patterned by providing a large area substrate in the optical path of a plurality of charged particle beams that are emitted from charged particle emitters....
US20050058913 Stencil mask, charged particle irradiation apparatus and the method  
A stencil mask capable of attaining long durability without any special processing thereon, wherein an inversion means for inverting the front and back of the stencil mask formed with an opening...
US20070057204 Lithography system, sensor and measuring method  
Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in...
US20090008579 ELECTRON BEAM LITHOGRAPHY APPARATUS AND DESIGN METHOD OF PATTERNED BEAM-DEFINING APERTURE  
A current density distribution characteristic within a beam pattern on a target object can be improved by using a simple-structured electron optical system and a single patterned beam-defining...
US20090032739 Method and System for Charged-Particle Beam Lithography  
Charged-particle beam lithography method and system. The lithography system has a map creation unit and a lithographic data creation unit. The map creation unit creates a proximity effect...
US20080203324 METHOD AND SYSTEM FOR IMPROVEMENT OF DOSE CORRECTION FOR PARTICLE BEAM WRITERS  
A method and system for dose correction of a particle beam writer is disclosed. The method and system includes reading a file of writing objects that includes dose intensity, calculating a rate of...
US20070228525 SUBSTRATE EARTHING MECHANISM FOR USE IN CHARGED-PARTICLE BEAM WRITING APPARATUS  
A substrate earthing mechanism includes a plate-like spring extending toward a substrate in a direction parallel to a surface of the substrate, and a contact portion coupled to a tip end of the...
US20090026912 INTENSITY MODULATED ELECTRON BEAM AND APPLICATION TO ELECTRON BEAM BLANKER  
Method and apparatus for achieving an intensity modulated electron blanker are disclosed. An apparatus includes a cathode exposed to an activation source to generate an electron beam. Cathode...
US20090246655 ELECTRON BEAM WRITING APPARATUS AND METHOD  
A Z stage is placed on an XY stage in avoidance of an area to which a mark table is fixed. The mask M is placed on a holding mechanism provided on the Z stage. A middle value of the range...
US20100173235 METHOD AND APPARATUS FOR WRITING  
A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a...
US20150064887 ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD  
An ion implantation apparatus includes an implantation processing chamber, a high voltage unit, and a high-voltage power supply system. In the implantation processing chamber ions are implanted...
US20120211677 MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM  
The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective...
US20100264328 CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL  
An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a...
US20110233431 IMPLANT METHOD AND IMPLANTER BY USING A VARIABLE APERTURE  
A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in...
US20140273536 CHARGED PARTICLE BEAM WRITING APPARATUS, APERTURE UNIT, AND CHARGED PARTICLE BEAM WRITING METHOD  
A charged particle beam writing apparatus according to an embodiment includes: a beam emitter configured to emit a charged particle beam; an aperture having an opening portion through which the...
US20110155929 APPARATUS AND SYSTEM FOR CONTROLLING ION RIBBON BEAM UNIFORMITY IN AN ION IMPLANTER  
An ion beam blocking array configured to provide a mechanical means for adjusting the beam current profile of an ion ribbon beam by blocking the beam current at one or more locations across the...
US20100127185 METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE  
In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which...
US20170133199 SYSTEMS INCLUDING A BEAM PROJECTION DEVICE PROVIDING VARIABLE EXPOSURE DURATION RESOLUTION AND METHODS OF OPERATING THE SAME  
A system includes an aperture array comprising a plurality of active apertures, respective ones of the active apertures configured to selectively deflect beams passing therethrough. The system...
US20130306884 Method and System for Forming Non-Manhattan Patterns Using Variable Shaped Beam Lithography  
A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is...

Matches 1 - 21 out of 21